• Title/Summary/Keyword: Frequency-dependent interference pattern

Search Result 5, Processing Time 0.017 seconds

A Study on Estimation of the Sound Speed of Seabed from the Frequency-dependent Interference Pattern of Broadband Signal (광대역 신호의 주파수 영역 간섭 패턴을 이용한 해저면 음속 추정 연구)

  • 이성욱;한주영;김남수;나정열;박정수
    • The Journal of the Acoustical Society of Korea
    • /
    • v.22 no.7
    • /
    • pp.554-561
    • /
    • 2003
  • Results of the numerical simulation and experimental data analysis for identification of mode cutoff frequency and estimation of sound speed of seabed from the spectrum of acoustic signal received at fixed source-receiver range are presented. Model simulations for Pekeris waveguide show that the frequency-dependent propagation loss and interference pattern are closely related to mode cutoff frequencies and it could be possible to the identify them from the changes of interference pattern. The concept considered at numerical simulations is applied to signals acquired at sea test. Cutoff frequency and sound speed of seabed are estimated from the interference pattern of measured signal. Propagation loss predicted using the estimated sound speed of seabed as model input parameter shows similar estimation result compared to propagation loss derived from measured data.

Acoustic Scattering from Circular Cylinder by Periodic Sources (주기적인 음원에 의한 원형 실린더의 음향 산란)

  • Lee, Duck-Joo;Kim, Yong-Seok
    • Transactions of the Korean Society for Noise and Vibration Engineering
    • /
    • v.17 no.1 s.118
    • /
    • pp.41-47
    • /
    • 2007
  • Scattering fields of two dimensional acoustic waves by a circular cylinder are investigated. The present numerical approach for the acoustic scattering problem has difficulties of numerical robustness, long-time stability and suitability of far-field boundary treatments. The time-dependent periodic acoustic source is used to analyze Interference patterns between incident waves and waves reflected by the cylinder. Characteristic boundary algorithms coupled with 4th order Modified-Flux-Approach ENO(essentially non-oscillatory) schemes are employed in generalized coordinates to examine the effect of the wane frequency on the interference patterns. Non-reflecting boundary conditions, which is crustal for accurate computations of aeroacoustic problems, are used not to contaminate scattering fields by reflected waves at the outer boundary. Computed scattering fields show the circumferential acoustic modes generated by interacting between acoustic sources and scattered waves. At a lower frequency, the wave passes almost straight through the cylinder without Interacting with circular cylinder. Simulation results are presented and compared with the analytic solution. Computed RMS-pressure distribution on the cylinder wall is good agreement with exact solution.

Insertion Loss by Noise Barrier on the Discontinuous Ground (불연속 지면위의 방음벽에 의한 삽입손실에 관한 연구)

  • Kim, Ye-Hyun;Kim, Dong-Ill;Jang, Ho-Kyeong
    • The Journal of the Acoustical Society of Korea
    • /
    • v.14 no.3
    • /
    • pp.114-121
    • /
    • 1995
  • Outdoor experimental study is presented the insertion loss caused by barrier considering discontinuous ground condition. Measurements ware made in 1/3 octave band over the frequency range 315 Hz~3150 Hz with the various geometry of the source, receiver and barriers. The frequency range of the interference pattern depends on the phase difference between path from the edge of barrier to receiver, and hence on the acoustical properties of the ground on the receiver side of the barrier. The insertion loss by barrier, in addition to diffraction, is shown to be dependent on the ground characteristic.

  • PDF

Transport parameters in a-Se:As films for digital X-ray conversion material (디지털 X-선 변환물질 a-Se:As의 수송변수)

  • Park, Chang-Hee
    • Korean Journal of Digital Imaging in Medicine
    • /
    • v.8 no.1
    • /
    • pp.51-55
    • /
    • 2006
  • The effects of Asaddition in amorphous selenium(a-Se) films for digital X-ray conversion material have been studied using the moving photocarrier grating(MPG) technique. This method utilizes the moving interference pattern generated by the superposition of the two frequency shifted laser beams for the illumination of the sample. This moving intensity grating induces a short circuit current, j$_{sc}$ in a-Se:As film. The transport parameters of the sample are extracted from the grating-velocity dependent short circuit current induced in the sample along the modulation direction. The electron and hole mobility, and recombination lifetime of a-Se films with arsenic(As) additions have been obtained. We have found an Increase in hole drift mobility and recombination lifetime, especially when 0.3% As is added into a-Se film, whereas electron mobility decreases with As addition due to the defect density. The transport properties for As doped a-Se films obtained by using MPG technique have been compared with X-ray sensitivity for a-Se:As device. The fabricated a-Se(0.3% As) device film exhibited the highest X-ray sensitivity out of 5 samples.

  • PDF

Transport parameters in a-Se:As films for digital X-ray conversion material using the moving-photocarrier-grating technique (moving-photocarrier-grating 기술을 이용한 디지털 X-선 변환물질 a-Se:As의 수송변수)

  • Park, Chang-Hee;Nam, Sang-Hee;Kim, Jae-Hyung
    • Journal of radiological science and technology
    • /
    • v.28 no.4
    • /
    • pp.267-272
    • /
    • 2005
  • The effects of As addition in amorphous selenium (a-Se) films for digital X-ray conversion material have been studied using the moving photocarrier grating (MPG) technique. This method utilizes the moving interference pattern generated by the superposition of the two frequency shifted laser beams for the illumination of the sample. This moving intensity grating induces a short circuit current, jsc in a-Se:As film. The transport parameters of the sample are extracted from the grating-velocity dependent short circuit current induced in the sample along the modulation direction. The electron and hole mobility, and recombination lifetime of a-Se films with arsenic (As) additions have been obtained. We have found an increase in hole drift mobility and recombination lifetime, especially when 0.3% As is added into a-Se film, whereas electron mobility decreases with As addition due to the defect density. The transport properties for As doped a-Se films obtained by using MPG technique have been compared with X-ray sensitivity for a-Se:As device. The fabricated a-Se(0.3% As) device film exhibited the highest X-ray sensitivity out of 5 samples.

  • PDF