• Title/Summary/Keyword: Frequency-Tunable

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Microstrip line tunable phase shifter (마이크로스트립 라인 가변 위상 천이기)

  • ;Mai linh
    • Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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    • 2002.05a
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    • pp.215-218
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    • 2002
  • In this paper, we propose a microstrip line tunable phase shifter. If we vary the applied bias voltage, the relative dielectric constant of ferroelectrics also changes and we designed tunable phase shifter using Au/BSTO/MgO/Au structure. We also used a coupling structure to increase the amount of phase shift at certain frequency in a limited size and we could reduce the loss by reducing the line width.

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A Tunable Bandpass SC Sigma-delta Modulator For Intermediate Frequency With Novel Architecture (IF 대역의 중심주파수 조절을 위한 새로운 구조를 갖는 4차 SC Bandpass Sigma-Delta Modulator)

  • Jo, Se-Jin;Cho, Seong-Ik
    • Journal of the Institute of Electronics Engineers of Korea SD
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    • v.48 no.1
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    • pp.50-55
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    • 2011
  • In this paper, Intermediate frequency tunable 4th order Switched Capacitor(SC) bandpass Sigma-Delta(${\Sigma}-{\Delta}$) modulator using feedback integrator using feedback integrator coefficients is proposed. The center frequency of the modulator can be easily changed than conventional structure because of a number of integrator coefficients which is decided rate of capacitors in circuit is reduced. In addition additive clocks and additive clock generating circuit are not necessary. The purposed modulator was implemented in $0.18{\mu}m$ CMOS technology. The resolution of the modulator within 200 kHz bandwidth and 80 MHz sampling frequency under fin = 15 MHz, 20 MHz, 25 MHz are over 12 bit.

Study on the Ferroelectric Properties of ALD-HfO2 in Microwave Band for Tunable RF Apparatus (Tunable RF 기기 적용을 위한 ALD-HfO2의 마이크로파 대역 강유전체 특성 고찰)

  • Han, Sang-Woo;Lee, Chang-Hyun;Lee, Jeong-Hae;Cha, Ho-Young
    • Journal of IKEEE
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    • v.22 no.3
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    • pp.780-785
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    • 2018
  • In this work, We investigated the frequency-dependent capacitance tunability of a metal-ferroelectric-metal variable capacitor fabricated using ALD $HfO_2$ ferroelectric material. The capacitance of the MFM capacitor could be tuned as a function of the bias voltage, up to the microwave frequency range. We observed a capacitance tuning range of ~3 % up to 2.5 GHz, proving the feasibility of the use of ALD $HfO_2$ in the microwave frequency band.

Fabrication and Output Characteristics of a High-Speed Wavelength Swept Mode-Locked Laser (고속 파장가변 모드잠김 레이저의 제작 및 출력특성)

  • Lee, Eung-Je;Kim, Yong-Pyung
    • The Transactions of The Korean Institute of Electrical Engineers
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    • v.56 no.6
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    • pp.1117-1121
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    • 2007
  • We demonstrate a wavelength swept mode-locked ring laser for the frequency domain optical coherence tomography(FD OCT). A laser is constructed by using a semiconductor optical amplifier, fiber Fabry-Perot tunable filter and 2.6 km fiber ring cavity. Mode-locking is implemented by 2.6 km fiber ring cavity for matching the fundamental or harmonic of cavity roundtrip time to a sweep period. The wavelength sweeps are repetitively generated with the repetition period of 77.2 kHz which is the parallel resonance frequency of Fabry-Perot tunable filter for the low driving current consumption of the fiber Fabry-Perot tunable filter. The wavelength tuning range of the laser is more than FWHM of 61 nm centered at the wavelength of 1320 nm and the linewidth of the source is $0.014{\pm}0.002$ nm.

A Study on Low-Band Tunable BPFs with a Novel Structure Suitable for the Filter Bank (필터뱅크에 적합한 새로운 구조를 갖는 저대역 튜너블 BPF에 관한 연구)

  • Kim, In-Seon;Lee, Young-Joong
    • Journal of the Korea Institute of Military Science and Technology
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    • v.16 no.3
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    • pp.285-294
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    • 2013
  • In this paper, we present a tunable BPF with a novel structure. The filter is very useful to optimization of low frequency filter performance, because the fiilter has air-coils and tuning screws. This filter also has the merits of light weight and small size in comparison with conventional tunable filter at low frequency. This type filters are especially suitable for switched filter bank due to tuning structure. We designed 4 channel filter bank with two SP4Ts and 4 BPFs using novel structure. Tuning processes were subsequently executed. We obtained satisfactory performances as a result; consequently, the validity of our proposal was proved.

Tunable Dielectric Properties and Curie Temperature with BST Thick Films (BST 후막의 가변 유전특성과 큐리온도에 관한 연구)

  • Kim In-Sung;Song Jae-Sung;Min Bok-Ki;Jeon So-Hyun
    • The Transactions of the Korean Institute of Electrical Engineers C
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    • v.55 no.8
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    • pp.392-398
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    • 2006
  • The properties of tunable dielectric materials on RF frequency band are important high tunability and low loss for RF variable devices, variable capacitor, phased array antenna and other components application. Various composite of BST(barium strontium titanate) ratio combined with other non-electrical active oxide ceramics have been formulated for such uses. We present the tunable properties and Curie temperature on BST thick films. The grain growth of the weight ratio of $BaTiO_3$ increased. This can be explained by the substitute $Sr^{2+}$ ion for $Ba^{2+}$ ion in the $BaTiO_3$ system. The Curie temperature was shifted to lower temperature with increasing $SrTiO_3$in the $BaTiO_3-SrTiO_3$ system, because of decreasing the lattice constant. Also, the dielectric constant, tunability and K-factor of $(Ba_xSr_{1-x})TiO_3$ at over the Curie temperature decreased, at over the $60^{\circ}C$ fixation, maximum dielectric constant at Curie temperature and hence sharper phase transformation occurred at Curie temperature. The result were interpreted as a process of internal stress relaxation resulting form the increase of $90^{\circ}$ domains induced the BST. As a result, It is concluded that over the Curie temperature, frequency response and DC field effect for the tunable properties of BST thick film are suppressed by the transition broadening. For the application of tunable devices, that the curie temperature was investigated to be increased.

RF MEMS Switches and Integrated Switching Circuits

  • Liu, A.Q.;Yu, A.B.;Karim, M.F.;Tang, M.
    • JSTS:Journal of Semiconductor Technology and Science
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    • v.7 no.3
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    • pp.166-176
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    • 2007
  • Radio frequency (RF) microelectromechanical systems (MEMS) have been pursued for more than a decade as a solution of high-performance on-chip fixed, tunable and reconfigurable circuits. This paper reviews our research work on RF MEMS switches and switching circuits in the past five years. The research work first concentrates on the development of lateral DC-contact switches and capacitive shunt switches. Low insertion loss, high isolation and wide frequency band have been achieved for the two types of switches; then the switches have been integrated with transmission lines to achieve different switching circuits, such as single-pole-multi-throw (SPMT) switching circuits, tunable band-pass filter, tunable band-stop filter and reconfigurable filter circuits. Substrate transfer process and surface planarization process are used to fabricate the above mentioned devices and circuits. The advantages of these two fabrication processes provide great flexibility in developing different types of RF MEMS switches and circuits. The ultimate target is to produce more powerful and sophisticated wireless appliances operating in handsets, base stations, and satellites with low power consumption and cost.

Frequency-Tunable Bandpass Filter Design Using Active Inductor (능동 인덕터를 이용한 주파수 가변형 대역통과 필터 설계)

  • Lee, Seok-Jin;Choi, Seok-Woo
    • Journal of the Korea Academia-Industrial cooperation Society
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    • v.14 no.7
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    • pp.3425-3430
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    • 2013
  • The fast-growing market in wireless communications has led to the development of multi-standard mobile terminals. In this paper, a frequency-tunable active RC bandpass filter for multi-standards wireless communication system is designed using an active inductor. The conventional bandpass filter design methods employ the high order filter or high quality factor Q to improve the stopband attenuation characteristics and frequency selectivity of the passband. The proposed bandpass filter based on the high Q active inductor has an improved frequency characteristics. The center frequency and gain of the designed bandpass filter is tuned by employing the tuning circuit. We have performed the simulation using TSMC $0.18{\mu}m$ process parameter to analyze the characteristics of the designed active RC bandpass filter. The bandpass filter with Q=20.5 has 90MHz half power bandwidth at the center frequency of 1.86GHz. Moreover, the center frequency of the proposed bandpass filter can be tuned between 1.86~2.38GHz for the multi-standards wireless communication system using the capacitor of the tuning circuit.

A design of magnetically tunable X-band E-plane waveguide filters (X-밴드 magnetically tunable E-평면형 도파관 여파기 설계)

  • 이해선;윤상원;장익수
    • Journal of the Korean Institute of Telematics and Electronics D
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    • v.35D no.1
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    • pp.16-26
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    • 1998
  • This paper presents a design methodology for magnetically tunable X-band E-plane type waveguide filters. The proposed design is based on using of quarter wavelength transmission line for compensating the negative length transmission line of end K-inverters of E-plane type waveguide filters. The derived formulae are applied for initial design and the correction method is also provided for final design by considering the frequency dependent characteristic of K-inverters. The analysis results of E-plane pype waveguide structure loaded with ferrite slab are obtained using the edge based finite element method including higher order mode effecets. It is shown that the unilateral finline E-plane type waveguide filter as well as the bilateral finline E-plane type waveguide filter achieves the the manetically tunable characteristic. The X-band experimantal results for bilateral and unilateral finline E-plane type waveguide filters agree well with the simulated data.

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Construction of High-Speed Wavelength Swept Mode-Locked Laser Based on Oscillation Characteristics of Fiber Fabry-Perot Tunable Filter (광섬유 패브리-페로 파장가변 필터의 공진특성에 기반한 고속 파장가변 모드잠김 레이저의 제작)

  • Lee, Eung-Je;Kim, Yong-Pyung
    • The Transactions of The Korean Institute of Electrical Engineers
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    • v.58 no.7
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    • pp.1393-1397
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    • 2009
  • A high-speed wavelength swept laser, which is based on oscillation characteristics of a fiber Fabry-Perot tunable filter, is described. The laser is constructed by using a semiconductor optical amplifier, a fiber Fabry-Perot tunable filter, and 3.348 km fiber ring cavity. The wavelength sweeps are repeatatively generated with the repetition period of 61 kHz which is the first parallel oscillation frequency of the Fabry-Perot tunable filter for the low power consumption. Mode-locking is implemented by 3.348 km fiber ring cavity for matching the fundamental of cavity roundtrip time to the sweep period. The wavelength tuning range of the laser is 87 nm(FWHM) and the average output power is 1.284 mW.