• 마이크로전자및패키징학회지
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• 제14권3호
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• pp.57-64
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• 2007

Si 칩에 박막히터를 형성하고 이에 전류를 인가하여 LCD (liquid crystal display) 패널의 유리기판은 가열하지 않으면서 Si 칩만을 선택적으로 가열함으로써 Si 칩을 LCD 패널의 유리기판에 실장 하는 새로운 COG 공정기술을 연구하였다. $5\;mm{\times}5\;mm$ 크기의 Si 칩에 마그네트론 스퍼터링법으로 폭 $150\;{\mu}m$,두께 $0.8\;{\mu}m$, 전체 길이 12.15 mm의 정방형 Cu 박막히터를 형성하였으며, 이에 0.9A의 전류를 60초 동안 인가하여 Si칩의 Sn-3.5Ag 솔더범프를 리플로우 시킴으로써 Si 칩을 유리기판에 COG 본딩하는 것이 가능하였다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2004년도 하계학술대회 논문집 Vol.5 No.2
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• pp.1096-1099
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• 2004

The principal problems in development of dielectric paste materials for PDP(plasma display panel)are PbO free paste and low melting temperature. We prepared PbO free paste from glasses in the system BaO-ZnO-$B_2O_3$-$V_2O_5$. DTA, and XRD were used to characterize BaO-ZnO-$B_2O_3$-$V_2O_5$ glasses. In this present study, PbO free paste had thermal expansion of $74\times10^{-7}/^{\circ}C$, DTA softening point of $460^{\circ}C$, and firing condition of $520^{\circ}C$, 20min

• 한국자기학회지
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• 제16권3호
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• pp.186-191
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• 2006

자기터널접합 기반의 MRAM(magnetic random access memory)은 자기저항효과를 응용하는 메모리소자로서 비휘발성과 고속 정보처리가 가능할 뿐만 아니라 고집적화 할 수 있는 차세대 통합형 비휘발성 메모리이다. 그러나 기존의 메모리 소자들에 비해 스위칭 산포가 크고, 기록마진(writing margin)이 확보되지 않아 아직까지는 고집적화가 어려운 실정이다. 최근 포화자화가 낮은 NiFeSiB 및 CoFeSiB과 같은 비정질 강자성체를 자기터널접합의 자유층 재료로 사용하여 스위칭 자기장의 거대화를 크게 감소시켜 MRAM의 기록마진을 높이는 연구결과에 관해 정리하여 보았다. 그리고 이러한 물질을 이용하여 자기터널접합의 재생마진(reading margin)과 관련된 터널자기저항비의 인가전압의존성을 저감시킬 수 있었다. 본고에서는 나노자기소자 기술의 중요한 분야인 MRAM의 기술발전 방향과 연구사례를 소개하고자 한다.

• 대한전자공학회:학술대회논문집
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• 대한전자공학회 2002년도 하계종합학술대회 논문집(2)
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• pp.29-32
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• 2002

This paper describes a novel structure of NMOSFET with elevated SiGe source/drain region and ultra-shallow source/drain extension(SDE)region. A new ultra-shallow junction formation technology. Which is based on damage-free process for rcplacing of low energy ion implantation, is realized using ultra-high vacuum chemical vapor deposition(UHVCVD) and excimer laser annealing(ELA).

• Bulletin of the Korean Chemical Society
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• 제34권11호
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• pp.3451-3455
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• 2013

Single-crystalline silicon nanowires (SiNWs) were fabricated by using an electroless metal-assisted etching of bulk silicon wafers with silver nanoparticles obtained by wet electroless deposition. The etching of SiNWs is based on sequential treatment in aqueous solutions of silver nitrate followed by hydrofluoric acid and hydrogen peroxide. SEM observation shows that well-aligned nanowire arrays perpendicular to the surface of the Si substrate were produced. Free-standing SiNWs were then obtained using ultrasono-method in toluene. Alkyl-derivatized SiNWs were prepared to prevent the aggregation of SiNWs and obtained from the reaction of SiNWs and dodecene via hydrosilylation. Optical characterizations of SiNWs were achieved by FT-IR spectroscopy and indicated that the surface of SiNWs is terminated with hydrogen for fresh SiNWs and with dodecyl group for dodecyl-derivatized SiNWs, respectively. The main structures of dodecyl-derivatized SiNWs are wires and rods and their thicknesses of rods and wire are typically 150-250 and 10-20 nm, respectively. The morphology and chemical state of dodecyl-derivatized SiNWs are characterized by scanning electron microscopy, transmission electron microscopy, and X-ray photoelectron spectroscopy.

• 마이크로전자및패키징학회지
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• 제6권1호
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• pp.81-89
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• 1999

Micromachining을 이용하여 기존의 전자 물품 감시에 사용되는 자기공명센서의 소형화 공정을 연구하였다. 설계 한 구조는 Free Standing Membrane형 과 Diving Board형의 두 가지이며 각자에 대해 적합한 공정 조건을 수립하고 실제로 그 구조를 형성해 보았다. 멤브레인형의 경우는 센서 모양을 여러 가지 형태로 쉽게 바꿀 수 있는 반면에 그 크기가 실리콘 기판의 두께에 의존하여 소형화하는데 한계가 있었으며 다이빙 보드형의 경우 소형화에도 유리하고 센서의 자기변형이 보다 자유로운 구조였다. 실리콘 질화막은 일반 반도체 공정에서의 조건보다 Si의 함량을 크게 하여 열처리 없이도 저응력의 박막형성이 가능하였으며 탄성계수 값이 크지 않아 센서 부분의 자기변형을 크게 구속하지 않아 센서물질의 지지층으로 유리한 물질이었다. 또한 스퍼터링으로 증착된 텅스텐은 자성 센서 물질로 연구되고 있는 Fe-B-Si물질에 대한 식각 선택도가 높아 구조 형성 공정 중 보호 층으로 사용된 후 제거될 수 있음을 알 수 있었다. 따라서 지지층으로 실리콘 질화막을 사용하고 보호층으로 텅스텐 박막을 사용한 다이빙 보드형 구조가 전자 물품 감시(EAS)용 센서의 소형화에 유리 할 것으로 생각된다.

• Journal of Microbiology and Biotechnology
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• 제33권12호
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• pp.1563-1575
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• 2023

Acyl-coenzyme A (CoA):diacylglycerol acyltransferase 2 (DGAT2) catalyzes the last stage of triacylglycerol (TAG) synthesis, a process that forms ester bonds with diacylglycerols (DAG) and fatty acyl-CoA substrates. The enzymatic role of Dgat2 has been studied in various biological species. Still, the full description of how Dgat2 channels fatty acids in skeletal myocytes and the consequence thereof in glucose uptake have yet to be well established. Therefore, this study explored the mediating role of Dgat2 in glucose uptake and fatty acid partitioning under short interfering ribonucleic acid (siRNA)-mediated Dgat2 knockdown conditions. Cells transfected with Dgat2 siRNA downregulated glucose transporter type 4 (Glut4) messenger RNA (mRNA) expression and decreased the cellular uptake of [1-¹⁴C]-labeled 2-deoxyglucose up to 24.3% (p < 0.05). Suppression of Dgat2 deteriorated insulin-induced Akt phosphorylation. Dgat2 siRNA reduced [1-¹⁴C]-labeled oleic acid incorporation into TAG, but increased the level of [1-¹⁴C]-labeled free fatty acids at 3 h after initial fatty acid loading. In an experiment of chasing radioisotope-labeled fatty acids, Dgat2 suppression augmented the level of cellular free fatty acids. It decreased the level of re-esterification of free fatty acids to TAG by 67.6% during the chase period, and the remaining pulses of phospholipids and cholesteryl esters were decreased by 34.5% and 61%, respectively. Incorporating labeled fatty acids into beta-oxidation products increased in Dgat2 siRNA transfected cells without gene expression involving fatty acid oxidation. These results indicate that Dgat2 has regulatory function in glucose uptake, possibly through the reaction of TAG with endogenously released or recycled fatty acids.

• 대한두경부종양학회:학술대회논문집
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• 대한두경부종양학회 1991년도 제8차 학술대회 연제순서 및 초록집
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• pp.14.2-16
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• 1991

• 한국자기공명학회논문지
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• 제12권2호
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• pp.74-80
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• 2008

The local structure of defects in undoped, Si-doped, and neutron irradiated free standing GaN bulk crystals, grown by hydride vapor phase epitaxy, has been investigated by employing electron magnetic resonance(EMR), Raman scattering and cathodoluminescence. The GaN samples were irradiated to a dose of $2{\times}10^{17}$ neutrons in an atomic reactor at Korea Atomic Energy Research Institute. There was no appreciable change in the Raman spectra for undoped GaN samples before and after neutron irradiation. However, a forbidden transition, $A_1$(TO) mode, appeared for a neutron irradiated Si-doped GaN crystal. Cathodoluminescence spectrum for the neutron irradiated Si-doped GaN crystal became much broader or was much more broadened than that for the unirradiated one. The observed EMR center with the g value of 1.952 in a neutron irradiated Si-doped GaN may be assigned to a Si-related complex donor.

• 한국수소및신에너지학회논문집
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• 제4권2호
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• pp.23-28
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• 1993

The $(LM)Ni_{4.5}Co_{0.1}Mn_{0.2}Al_{0.2}$ hydrogen storage alloy powders were conducted 25wt% electroless copper plating in an acidic bath. For the preparation of a hydride electrodes, the copper coated alloy powder was mixed with Si-sealant(organosilicon) and compacted with $6t/cm^2$ at room temperature. The electrode characteristics were examined through electrochemical measurements in a half cell. As a sealant contents increased, the initial discharge capacity of si-sealant bounded electrode was lower and the activation rate in high current density was slower. For extended cycles, however, the electrodes with the Si-sealant were superior in a high rate discharge and useful range of temperature over the sealant-free electrode. In addition, the cycle life increased with increasing the amount of Si-sealant added. It can be suggested from the results that the Si-sealant as a binder could be applied to the preparation of the metal hydride electrode.