• Proceedings of the KWS Conference
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• 2000.04a
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• pp.170-173
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• 2000

• Journal of the Korean institute of surface engineering
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• v.35 no.3
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• pp.133-140
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• 2002

The Ti-Si-N coating layers were synthesized on SKD 11 steel substrate by a DC reactive magnetron co-sputtering technique with separate Ti and Si targets. The high resolution transmission electron microscopy (HRTEM) and X-ray photoelectron spectroscopy (XPS) analyses for the coating layers revealed that microstructure of Ti-Si-N layer was nanocomposite, consisting of nano-sized TiN crystallites surrounded by amorphous $Si_3$$N_4$ phase. The highest hardness value of about 39 GPa was obtained at the Si content of ~11at.%, where the microstructure had fine TiN crystallites (about 5nm in size) dispersed uniformly in amorphous matrix. As the Si content in Ti-Si-N films increased, the TiN crystallites became from aligned to randomly oriented microstructure, finer, and fully penetrated by amorphous phase. Free Si appeared in the layers due to the deficit of nitrogen source at higher Si content. Friction coefficient and wear rate of the Ti-Si-N coating layer significantly decreased with increase of relative humidity. The self-lubricating tribe-layers such as $SiO_2$ or (OH)$Si_2$ seemed to play an important role in the wear behavior of Ti-Si-N film against steel.

• Bulletin of the Korean Chemical Society
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• v.29 no.12
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• pp.2337-2340
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• 2008

• Journal of the Korean Magnetics Society
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• v.16 no.6
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• pp.279-282
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• 2006

Magnetic tunnel junctions (MTJs), which consisted of amorphous ferromagnetic NiFeSiB free layers, were investigated. The NiFeSiB layers were used to substitute for the traditionally used CoFe and/or NiFe layers with the emphasis being given to obtaining an understanding of the effect of the amorphous free layer on the switching characteristics of the MTJs. $Ni_{16}Fe_{62}Si_{8}B_{14}$ has a lower saturation magnetization ($M_{s}:\;800\;emu/cm^{3}$) than $Co_{90}Fe_{10}$ and a higher anisotropy constant ($K_{u}:\;2700\;erg/cm^{3}$) than $Ni_{80}Fe_{20}$. The $Si/SiO_{2}/Ta$ 45/Ru 9.5/IrMn 10/CoFe $7/AlO_{x}/CoFeSiB\;(t)/Ru\;60\;(in\;nanometers)$structure was found to be beneficial for the switching characteristics of the MTJ, leading to a reduction in the coercivity ($H_{c}$) and an increase in the sensitivity resulted from its lower saturation magnetization and higher uniaxial anisotropy. Furthermore, by inserting a very thin CoFe layer at the tunnel barrier/NiFeSiB interface, the TMR ratio and switching squareness were improved more with the increase of NiFeSiB layer thickness up to 11 nm.

• Journal of the Semiconductor & Display Technology
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• v.17 no.4
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• pp.1-5
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• 2018

Atomic force microscopy (AFM) simulation for Si (001) surface defects was conducted by using density functional theory (DFT). Three major defects on the Si (001) surface are difficult to analyze due to external noises that are always present in the images obtained by AFM. Noise-free surface defects obtained by simulation can help identify the real surface defects on AFM images. The surface defects were first optimized by using a DFT code. The AFM tip was designed by using five carbon atoms and positioned on the surface to calculate the system's energy. Forces between tip and surface were calculated from the energy data and converted into an AFM image. The simulated AFM images are noise-free and, therefore, can help evaluate the real surface defects present on the measured AFM images.

• Bulletin of the Korean Chemical Society
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• v.31 no.7
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• pp.1973-1975
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• 2010

The electronic and adsorption structure of o-phthalaldehyde (OPA) on the H-Si(100) surface was investigated by using Near Edge X-ray Fine Structure (NEXAFS) and high resolution photoemission spectroscopy (HRPES). We confirmed that the OPA grown on the H-Si(100) surface showed good dependency with about 60 degree tilting angle using NEXAFS and a single O 1s peak by using HRPES. Hydrogen atom passivated on the Si(100) surface was found to be a seed for making one dimensional organic line that uses a chain reaction as the H-Si(100) surface was compared with the hydrogen free Si(100) surface.

• Electrical & Electronic Materials
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• v.7 no.6
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• pp.481-489
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• 1994

The $SnO_2$/(n)Si solar cell was fabricated by electron beam evaporation method, and their properties were investigated. In proportion to increase of substrate and annealing temperature, the conductivity of $SnO_2$ thin film was increased, but its optical transmission decreases because of increasing optical absorption of free electrons in the thin film. $SnO_2$/Si Solar cell characteristics were improved by annealing, but the solar cells was deteriorated by heat treatment above 500[.deg. C]. The optimal outputs of $SnO_2$/Si solar cell through above investigations were $V_{\var}$:350[mV], $J_{sc}$ ;16.53[mA/c $m^{2}$], FF;0.41, .eta.=4.74[%]

• Proceedings of the Korean Vacuum Society Conference
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• 2010.08a
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• pp.79-79
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• 2010

The electronic and adsorption structure of O-Phthaladehyde (OPA) on the H-Si(100) surface was investigated by using Near Edge X-ray Fine Structure (NEXAFS) and high resolution photoemission spectroscopy (HRPES). We confirmed that the OPA grown on the H-Si(100) surface showed good dependency with about 60 degree tilting angle using NEXAFS and a single O 1s peak by using HRPES. Hydrogen atom passivated on the Si(100) surface was found to be a seed for making one dimensional organic line that uses a chain reaction as the H-Si(100) surface was compared with the hydrogen free Si(100) surface. Through the spectral analysis, we will demonstrate 1-D directional formation of OPA on H-Si(100) surface using NEXAFS and HRPES.

• Proceedings of the Korean Society Of Semiconductor Equipment Technology
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• 2006.05a
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• pp.115-120
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• 2006

MEMS 소자의 접합과 패키징에 Pb free solder를 사용하게 됨에 따라 발생하는 문제들로 인하여 보다 쉽고 간편하게 hermetic이 유지될 수 있는 방법을 검토하게 되었다. 따라서 본 연구는 epoxy 계통의 negative PR인 XP SU-8 3050 NO-2를 접착제로 사용 시 Si시편/ 유리기판, Si시편/LTCC기판에서 hermetic 특성의 고찰이 목적이다. Si시편/유리기판과 Si시편/LTCC기판의 접합 계면에 접착제로 negative PR을 토출하고 활성화 공정조건을 행한 시편들에서 hermetic이 얻어졌다. Si시편/유리기판의 leak rate는 $5.9{\times}10^{-8}mbar-1/sec$로 접합방법에 따른 영향은 없었으며, Si시편/LTCC 기판에서 leak rate는 $4.9{\times}10^{-8}mbar-1/sec$로 Si시편/유리기판과 비슷하였다. 향후 He leak rate를 개선하기 위해서는 LTCC 기판을 가공하여 PR 흐름방지 턱을 만들고, UV expose 에너지를 높이고 ($400mj/cm^2$ 조사), 시린지/기판의 gap 조절을 자동화 할 수 있는 vision system이 부착된 장비를 사용하면, 보다 낮은 leak rate 값을 얻을 수 있어 우수한 hermetic이 유지된다.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.21 no.6
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• pp.544-551
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• 2008

We have studied the dielectric characteristics of low-k interlayer dielectric materials fabricated by PECVD for various precursor's flow rates. BTMSM precursor was introduced with the flow rates from 42 sccm to 60 sccm by 2 sccm step in the constant flow rate of 60 sccm $O_2$. The absorption intensities of Si-O-$CH_x$ bonding group and Si-$CH_x$ bonding group changed synchronously for the variation of precursor flow rate, but the intensity of Si-O-Si(C) responded asynchronously with the $CH_x$ combined bonds. The heat treatment reduced the FTIR absorption intensity of Si-O-$CH_x$ bonding group and Si-$CH_x$ bonding group but increased the intensity of Si-O-Si(C). The nanopore and free space formed by the increasement of caged link mode and cross link mode of Si-O-Si(C) group implied the origin of low-k SiOCH films.