• Proceedings of the KIEE Conference
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• 2006.07c
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• pp.1494-1495
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• 2006

A complete finite element analysis method for discharge onset process, which is governed and coupled by charge transport equation and electric field equation, was presented. The charge transport equation of first order was transformed into a second-order one by utilizing the artificial diffusion scheme. The two second-order equations were analyzed by the finite element formulation which is well-developed for second-order ones. The Fowler-Nordheim injection boundary condition was adopted for charge transport equation. After verifying the numerical results by comparing to the analytic solutions using parallel plane electrodes with one carrier system, we extended the result to blade-plane electrodes in 2D xy geometry with three carriers system. Radius of the sharp tip was taken to be 50 ${\mu}m$. When this sharp geometry was solved by utilizing the space discretizing methods, the very sharp tip was found to cause a singularity in electric field and space charge distribution around the tip. To avoid these numerical difficulties in the FEM, finer meshes, a higher order shape function, and artificial diffusion scheme were employed.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.129-130
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• 2009

The P/E characteristics of $HfO_2$ CTF memory capacitor with $SiO_2/HfO_2/Al_2O_3$(OHA) engineered tunnel barrier were investigated. After a growth of thermal oxide with a thickness of 2 nm, 1 nm $HfO_2$ and 3 $Al_2O_3$ layers were deposited by atomic layer deposition (ALD) system. The band offset was calculated by analysis of conduction mechanisms through Fowler-Nordheim (FN) plot and Direct Tunneling (DT) plot. Moreover the PIE characteristics of $HfO_2$ CTF memory capacitor with OHA tunnel barrier was presented.

• Journal of the Korean Institute of Telematics and Electronics
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• v.26 no.11
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• pp.1699-1705
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• 1989

Nitridation of about 300\ulcornerSiO2 filmss thermally grown on Si was performed in NH3 plasm ambient (0.2-2 torr) at 900\ulcornerC-1100\ulcorner for 15-20 minutes. The peoperties of those films have been investigated by analyzing the AES and the SIMS data, and the results of the I-V and the C-V measurements. At the plasma ambient of less than 1.5 torr pressure, etching of the films have been shown. Above the 1.5 torr pressure, however, SiO2 films were nitrided as SiIxNy. Plasma thermal nitridation of SiO2 by addition of small amount (6%) of CF4 to the NH3 showed higher pile-up N concentration in the surface region of SiOxNy film. The higher the nitridation temperature is and the longer the nitridation time is the larger the dielectric constant is. The plasma thermal nitridation of silicon dioxide on silicon causes the flat-band voltage shift based on the formation of the positive charge. The conduction mechanism for SiOxNy films could be elucidated by Fowler-Nordheim tnneling model. By SIMS analysis, surface of the film nitrided in plasma process has less contamination than that of the film nitrided in open-tube process.

• Journal of the Korean Institute of Telematics and Electronics D
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• v.34D no.9
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• pp.56-63
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• 1997

There generally exists a large variation in the thereshold voltages of the flash EEPROM cells after they are erased by using th fowler-nordheim tunneling, thereby getting some cells to be overeased. If the overerased cells are programmed with the conventional one-step programming scheme where an 12-13V pulse with the duration of 100.mu.S is applie don the control gate for the programming, they can suffer from the significant degradation of the reliability of the gate oxide. A two-step programming schem, where an 8/12 V pulse with a duration of 50.mu.S for each voltage is applied on the control gate for the programming, has been studied to solve the problem. The experimental results hav eshown that there is little difference in the programming characteristics between those two schemes, whereas the degradation of the gate oxide due to the programming can be significantly reduced with the two-step programming scheme compared to that with the one-step programming scheme. This is possibly because the positive charge stored in the floating gate of the overerased cells is compensate dwith the electrons injected into the floating gate while the 8V pulse is applied on the control gate, which leaves the overerased cells in the normally erased state after the duration of the 8V pulse.

• 한국정보디스플레이학회:학술대회논문집
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• 2002.08a
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• pp.309-312
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• 2002

Triode field emitters with planar-carbon-nanopaticle (CNP) cathodes were successfully fabricated using the conventional photolithography and the hotfilament chemical vapor deposition. Electron emission from a CNP triode emitter with a 12-${\mu}m$-diameter gate hole started at the gate voltage of 45 V, and the anode current reached the level of ${\sim}120$ nA at the gate voltage of 60 V, respectively. For the quantitative analysis of the Fowler-Nordheim (F-N) type emission from a CNP triode emitter, we carried out 2dimensional numerical calculation of electrostatic potential using the finite element method. As it turned out, a radial variation of electric field was very important to account for the emission from a planar emitting layer. By assuming the graphitic work function of 5 eV for CNPs, we were able to extract a consistent set of F-N parameters, together with the radial position of emitting sites.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.07a
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• pp.157-159
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• 2005

MOS capacitors were fabricated to study electrical and chemical properties of Ta-Mo metal alloy with $ZrO_2$. The work function of Ta-Mo alloy were varied from 4.1eV to 5.1eV by controlling the composition. When the atomic composition of Mo is 10%, good thermal stability up to $800^{\circ}C$ was observed and work function of MOS capacitor was 4.1eV, compatible for NMOS application. But pure Ta exhibited very poor thermal stability. After $600^{\circ}C$ annealing, equivalent oxide thickness of tantalum gate MOS capacitor was continuously decreased. Barrier heights of Ta-Mo alloy and pure metal that supported the work function values were calculated from Fowler-Nordheim analysis. As a result of these electrical?experiments, Ta-Mo metal alloy with $ZrO_2$ is excellent gate electrode for NMOS.

• Transactions on Electrical and Electronic Materials
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• v.13 no.2
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• pp.60-63
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• 2012

Enhancement of efficiency and luminance of organic light-emitting diodes was investigated by the introduction of a lithium carbonate ($Li_2CO_3$) electron-injection layer. Electron-injection layer is used in organic light-emitting diodes to inject electrons efficiently between a cathode and an organic layer. A device structure of ITO/TPD (40 nm)/$Alq_3$ (60 nm)/$Li_2CO_3$ (x nm)/Al (100 nm) was manufactured by thermal evaporation, where the thickness of $Li_2CO_3$ layer was varied from 0 to 3.3 nm. Current density-luminance-voltage characteristics of the device were measured and analyzed. When the thickness of $Li_2CO_3$ layer is 0.7 nm, the current efficiency and luminance of the device at 8.0 V are improved by a factor of about 18 and 3,000 compared to the ones without the $Li_2CO_3$ layer, respectively. The enhancement of efficiency and luminance of the device with an insertion of $Li_2CO_3$ electron-injection layer is thought to be due to the lowering of an electron barrier height at the interface region between the cathode and the emissive layer. This is judged from an analysis of current density-voltage characteristics with a Fowler-Nordheim tunneling conduction mechanism model. In a study of lifetime of the device that depends on the thickness of $Li_2CO_3$ layer, the optimum thickness of $Li_2CO_3$ layer was obtained to be 1.1 nm. It is thought that an improvement in the lifetime is due to the prevention of moisture and oxygen by $Li_2CO_3$ layer. Thus, from the efficiency and lifetime of the device, we have obtained the optimum thickness of $Li_2CO_3$ layer to be about 1.0 nm.