• 한국정보디스플레이학회:학술대회논문집
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• 2003.07a
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• pp.675-678
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• 2003

We studied the electrical characteristics of pentacene-based organic field-effect transistors (FETs) with polymethyl methacrylate (PMMA) or poly-4-vinylphenol (PVP) as the gate insulator. PMMA or PVP was spin-coated on the indium tin oxide glass substrate that serves as gate electrodes. The source-drain current dependence on the gate voltage shows the FET characteristics of the hole accumulation type. The transistor with PVP shows a higher field-effect mobility of 0.14 $cm^{2}/Vs$ compared with 0.045 $cm^{2}/Vs$ for the transistor with PMMA. The atomic force microscope (AFM) images indicate that the grain size of the pentacene on PVP is larger than that on PMMA. X-ray diffraction (XRD) patterns for the pentacene deposited on PVP exhibit a new Bragg reflection at $19.5{\pm}0.2^{\circ}$, which is absent for the pentacene on PMMA. This peak corresponds to the flat-lying pentacene molecules with less intermolecular spacing.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.15 no.11
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• pp.953-957
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• 2002

Single crystal 3C-SiC (cubic silicon carbide) thin-films were deposited on Si(100) wafer up to the thickness of 4.3 ${\mu}{\textrm}{m}$ by APCVD (atmospheric pressure chemical vapor deposition) method using HMDS (hexamethyildisilane; ｛CH$_{3}$｝$_{6}$ Si$_{2}$) at 135$0^{\circ}C$. The HMDS flow rate was 0.5 sccm and the carrier gas flow rate was 2.5 slm. The HMDS flow rate was important to get a mirror-like crystal surface. The growth rate of the 3C-SiC film was 4.3 ${\mu}{\textrm}{m}$/hr. The 3C-SiC epitaxial film grown on Si(100) wafer was characterized by XRD (X-ray diffraction), AFM (atomic force microscopy), RHEED (reflection high energy electron diffraction), XPS (X-ray photoelecron spectroscopy), and Raman scattering, respectively. Two distinct phonon modes of TO (transverse optical) near 796 $cm^{-1}$ / and LO (longitudinal optical) near 974$\pm$1 $cm^{-1}$ / of 3C-SiC were observed by Raman scattering measurement. The heteroepitaxially grown film was identified as the single crystal 3C-SiC phase by XRD spectra (2$\theta$=41.5。).).

• Proceedings of the Korean Society of Propulsion Engineers Conference
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• 2007.11a
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• pp.293-296
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• 2007

Using the T3 free-piston shock tunnel in ANU, the cavity frequency and flow characteristics of no mass-injection, inclined mass-injection before the cavity, parallel or reverse mass-injection in the cavity are investigated in the case of Mach 3.7 inflow condition. No mass-injection doesn't have the harmonic frequencies but has high amplitude of pressure spectrum at 10 kHz. Inclined mass-injection attenuates the cavity flow fluctuation as disturbing the shear layer reflection at the trailing edge. Parallel mass-injection flow reflects at the trailing edge of the cavity directly hence, increases the cavity flow fluctuation at high injection pressure.

• Membrane and Water Treatment
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• v.11 no.4
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• pp.237-245
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• 2020

The effects of the mixed two solvents, Dimethylacetamide (DMAc) and Dimethylformamide (DMF), and Polyethylene glycol (PEG) and Polyvinylpyrrolidone (PVP) as additives on performance of Polyvinylidene fluoride (PVDF) membranes were studied. Initially, PEG200 was used as a primary additive at fixed percentage of 5% wt. PVP was then blended with PEG200 in different concentrations. PVDF and DMAc were used as polymer and solvent in the casting solutions, respectively. To control the diffusion rate of PVP in the presence of PEG200 and PVP blend, mixtures of DMAc and DMF were used as the mixed solvent in the casting solutions. Asymmetric PVDF membranes were prepared via phase inversion process in a water bath and the effects of two additives and two solvents on the membrane morphology, pure water flux (PWF), hydrophilicity and rejection (R) were investigated. Attenuated Total Reflection Fourier Transform Infrared Spectra (ATR-FTIR) analysis was used to show the residual PVP on the surface of the membranes. Atomic Force Microscopy (AFM) was utilized to determine roughness of membrane surface. The use of mixed solvents in the casting solution resulted in reduction of PVP diffusion rate and increment of PEG diffusion rate. Eventually, PWF and R values reduced, while porosity and hydrophilicity increased.

• Journal of Korean Society of Coastal and Ocean Engineers
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• v.7 no.3
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• pp.219-226
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• 1995

The wave interaction with flexible membrane such as PVC and PU fabrics is studied to prove its applicability to portable breakwaters. To analyze the wave deformation due to the flexible membrane. eigen-function expansion method is employed. The fluid domain is seperated into two regions. The velocity potential in each regions and the deformation of membrane are coupled by the body boundary conditions. Herein the deformation of membrane is obtained by solving the membrane equation. As a numerical example, transmission and reflection coefficients according to the change of several design parameters such as tensile force. mooring line stiffness and membrane height are investigated. It is found that the efficiency of flexible membrane breakwater is significantly affected by these design parameters. The angle of incident wave is an important role to the performance of breakwater. Finally we conclude that flexible membrane can be used to engineering material for the future breakwaters.

• Korean Journal of Materials Research
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• v.6 no.7
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• pp.661-670
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• 1996

리모트 수소 플라즈마를 이용하여 실리콘 웨이퍼 표면 위에 있는 금속불순물의 제거 및 제거기구에 관하여 조사하였다. 실리콘의 표면과 내부분석을 위하여 TXRF(total reflection x-ray fluorescence)와 SPV(surface photovoltage), AFM(atomic force microscope)을 사용하였다. TXRF 분석결과 리모트 수소 플라즈마가 금속오염물질 제거에 상당한 효과가 있는 것으로 나타났다. TXRF분석결과 리모트 수소 플라즈마가 금속오염물질 제거에 상당한 효과가 있는 것으로 나타났다. 리모트 수소플라트마 처리 후 금속오염은 금속원소의 종류에 따라 1010atoms/$\textrm{cm}^2$-1011atoms/$\textrm{cm}^2$수준이었다. SPV분석결과를 보면 수소 플라즈마 처리에 의해 minority carrier 수명이 전반적으로 증가하였다. AFM 분석을 통하여 수소 플라즈마 처리가 표면 손상을 일으키지 않으며 표면의 거칠기에 나쁜 영향을 미치지 않음을 알 수 있었다. 또한 본 실험에서 나타난 결과들을 종합해 볼 때 금속오염물의 제거기구는 자연산화막 혹은 수소로 passivate된 실리콘 웨이퍼 표면을 수소 플라즈마에서 발생된 수소원자가 실리콘표면을 약하게 에칭할 때 떨어져 나가는 'lift-off'가 유력한 것으로 판단된다.

• Korean Journal of Materials Research
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• v.5 no.3
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• pp.297-309
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• 1995

본 연구에서는 이온선보조증착법에 의해 Si(100)기판위에 정합성장된 $Si_{0.5}$Ge_{0.5}$층의 핵성성과 성장을 고찰하였다. 성장층에 대한 AFM(Atomic Force Microscopy), RHEED(Reflection High Energy Electron diffraction) 등의 분석결과 Si(100)기판위에 이온선보조증착에 의하여 성장된 $Si_{0.5}$Ge_{0.5}$층은 Stranski-Kranstanov(SK)기구로 성장되며, 300eV, 10 $\mu$A/$cm^{2}$의 Ar이온선을 조사시키는 경우 결정성이 향상되었고, SK 성장 방식의 임계두께가 증가하였다. Ar 이온선 조사에 의해 MBE에 의한 정합성장온도(55$0^{\circ}C$-$600^{\circ}C$)보다 훨씬 낮은 20$0^{\circ}C$에서 정합성장이 가능하였으며, $x_{mn}$값은 10.5%로 MBE에 의한 정합성장시 보고된 $x_{mn}$ 값보다 낮았다. 이온충돌에 의해 발생한 3차원 island의 분해와 표면확산의 증가가 $Si_{0.5}$Ge_{0.5}$층의 성장에 현저한 영향을 미쳤으며, 이온충돌의 영향은 3차원 island의 생성보다 3차원 island의 분해가 더 안정한 낮은 증착온도에서만 관찰되었다.

• Journal of Korean Society of Coastal and Ocean Engineers
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• v.19 no.6
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• pp.586-595
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• 2007

The analytic solution of wave scattering of monochromatic waves on a pile breakwater by an eigenfunction expansion method is extended to the case of directional irregular waves. The scattering wave spectrum and the force spectrum can be expressed from the reflection coefficient, transmission coefficient and the wave forces obtained from changing frequencies and incident angles in monochromatic waves. By numerical integration of 2-dimensional spectrum which is function of frequencies and incident angles, the representative values for the scattered waves and wave forces are obtained and the dependence of the transmission coefficients and wave forces on the directional distribution function, the principal wave direction, the submergence depth, and porosity is analyzed.

• Bulletin of the Korean Chemical Society
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• v.28 no.4
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• pp.533-537
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• 2007

This paper describes the heteroepitaxial growth of single-crystalline 3C-SiC (cubic silicon carbide) thin films on Si (100) wafers by atmospheric pressure chemical vapor deposition (APCVD) at 1350 oC for micro/nanoelectromechanical system (M/NEMS) applications, in which hexamethyldisilane (HMDS, Si2(CH3)6) was used as a safe organosilane single-source precursor. The HMDS flow rate was 0.5 sccm and the H2 carrier gas flow rate was 2.5 slm. The HMDS flow rate was important in obtaing a mirror-like crystalline surface. The growth rate of the 3C-SiC film in this work was 4.3 μm/h. A 3C-SiC epitaxial film grown on the Si (100) substrate was characterized by X-ray diffraction (XRD), transmission electron microscopy (TEM), reflection high energy electron diffraction (RHEED), atomic force microscopy (AFM), X-ray photoelectron spectroscopy (XPS) and Raman scattering, respectively. These results show that the main chemical components of the grown film were single-crystalline 3C-SiC layers. The 3C-SiC film had a very good crystal quality without twins, defects or dislocations, and a very low residual stress.

• Journal of the Korean Magnetics Society
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• v.11 no.1
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• pp.14-20
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• 2001

The structure, shape, size, and magnetic properties of Ni$_{0.5}$Cu$_{0.1}$Zn$_{0.4}$Fe$_2$O$_4$ have been investigated as a function of annealing temperatures. In order to control the microwave absorbing properties of ferrite-rubber composite and the complex losses (magnetic loss and conduction loss), the effect of carbon addition was also studied. It was found that the coercive force decreased with increasing heat-treatment temperatures. Relative complex permeability and reflection loss were measured by the network analyzer. As a result, the natural resonance occurred in the low frequency tinge, and the matching frequency of the ferrite-rubber composite prepared at 130$0^{\circ}C$ was found to be lower. As heat-treatment temperatures were increased, the magnetic loss ($\mu$$_{r}$", $\mu$$_{r}$′) and the dielectric loss ($\varepsilon$$_{r}$"/$\varepsilon$$_{r}$′) were increased. It was caused that the absorption characteristics of the absorber were improved. The conduction loss and magnetic loss were expected to be occurred together because two matching frequencies were shown with carbon addition. It was confirmed that the matching frequency of the microwave absorber could be controlled by controlling heat-treatment temperatures and carbon additions.ons.tions.