• Proceedings of the Korean Society of Precision Engineering Conference
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• 2008.06a
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• pp.365-366
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• 2008

• Journal of the Mineralogical Society of Korea
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• v.26 no.4
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• pp.325-330
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• 2013

• Proceedings of the Korean Vacuum Society Conference
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• 2008.08a
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• pp.48-48
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• 2008

• 한국초전도학회:학술대회논문집
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• v.15
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• pp.31-31
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• 2005

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.18 no.3
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• pp.259-263
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• 2005

The changes in secondary electron emission coefficient(${\gamma}$) and work function($\Phi$$_{\omega}$) have been studied on the surface of MgO protective layer aster plasma(Ar. $O_2$) treatment using ${\gamma}$-focused ion beam (${\gamma}$-FIB) system. The values of ${\gamma}$ varied as follows: $O_2$-treated MgO > Ar-treated MgO > Non-treated MgO, and the work functions varied in the reverse order. The result indicates that both the physical etching and the chemical reaction of $O_2$-plasma removed the contaminating materials from the surface of MgO.

• Progress in Superconductivity
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• v.10 no.2
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• pp.74-78
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• 2009

Inter-grain nanobridges of the $MgB_2$ superconductor have been fabricated by focused-ion-beam(FIB) and their electrical transport properties were studied. The $MgB_2$ film was prepatterned into microbridges by a standard argon ion milling technique and then FIB-patterned into 100 nm$\times$100 nm bridges. Current-voltage characteristics showed a strong flux-flow type behavior at all temperatures with a trait of Josephson coupling near $T_c$. At low temperatures, the curves showed a two-step resistance-doubled transition with occasional hysteresis. The resistance-doubling transition is believed to be due to a two-channel flux-flow effect. The temperature-dependent critical current data showed $I_c(T){\propto}(1-T/T_c)^2$ near $T_c$, same as a normal barrier junction, and $I_c(T){\propto}(1-T/T_c)^{1.2}$ at low temperatures, similar to that of a film.

• 한국정보디스플레이학회:학술대회논문집
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• 2006.08a
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• pp.877-881
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• 2006

We obtained sputtering yields for the MgO, $MgAl_2O_4$ and $MgAl_2O_4/MgO$ films using the FIB system. $MgAl_2O_4/MgO$ protective layers have been found to have less $24^{\sim}^30%$ sputtering yield values from 0.24 atoms/ion up to 0.36 atoms/ion than MgO layers with the values from 0.36 atoms/ion up to 0.45 atoms/ion for irradiated $Ga^+$ ion beam whose energies ranged from 10 keV to 14 keV. And $MgAl_2O_4$ layers have been found to have lowest sputtering yield values from 0.88 up to 0.11. It is also found that $MgAl_2O_4/MgO$ and MgO have secondary electron emission $coefficient({\gamma})$ values from 0.09 up to 0.12 for $Ne^+$ ion whose energies ranged from 50 eV to 200 eV.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.564-564
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• 2012

Graphene has been emerged as a fascinating material for future nanoelectronic applications due to its extraordinally electronic properties. However, their zero-bandgap semimetallic nature is a major problem for applications in high performance field-effect transistors (FETs). Graphene nanoribbons (GNRs) with narrow widths (${\geq}10nm$) exhibit semiconducting behavior, which can be used to overcome this problem. In previous reports, GNRs were produced by several approaches, such as electron beam lithography patterning, chemically derived GNRs, longitudinal unzipping of carbon nanotubes, and inorganic nanowire template. Using these methods, however, the width distribution of GNRs was a quiet broad and substantial defects were inevitably occurred. Here, we report a novel approach for fabricating width-tailored GNRs by focused ion beam-assisted chemical vapor deposition (FIB-CVD). Width-tailored phenanthrene ($C_{14}H_{10}$) templates for direct growth of GNRs were prepared on $SiO_2$/Si substrate by FIB-CVD. The GNRs on the templates were synthesized at $900-1,050^{\circ}C$ with introducing $CH_4$ $(20sccm)/H_2$ (10 sccm) mixture gas for 10-300 min. Structural characterizations of the GNRs were carried out using Raman spectroscopy, scanning electron microscopy, and atomic force microscopy.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2005.06a
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• pp.1186-1189
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• 2005

Focused Ion Beam machining is an attractive approach to produce nano-scale 3D structures. However, like other beam-based manufacturing processes, the redeposition of the sputtered material during the machining deteriorates the geometric accuracy of ion beam machining. In this research a new approach to reduce the geometric error in FIB machining is introduced. The observed redeposition phenomena have been compared with existing theoretical model. Although the redeposition effect has good repeatability the prediction of exact amount of geometric error in ion beam machining is difficult. Therefore, proposed method utilizes process control approach. Developed algorithm measures the redeposition amount after every production cycle and modifies next process plan. The method has been implemented to a real FIB machine and the experimental results demonstrated considerable improvement of five micrometer-sized pocket machining.

• 한국정보디스플레이학회:학술대회논문집
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• 2007.08b
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• pp.1380-1383
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• 2007

The secondary electron emission coefficient (${\gamma}$) of the cathode is an important factor for improving the discharge characteristics of AC-PDP, because of its close relationship to discharge voltage. In this experiment, we have investigated the electronic structure of the energy band in the MgO layer responsible for the high ${\gamma}$. We used three kinds of MgO pellet that have another component, and each MgO layers have been deposited by electron beam evaporation method. The work-functions of MgO layer have been investigated from their ion-induced secondary electron emission coefficient (${\gamma}$), respectively, using various ions with different ionization energies in a ${\gamma}-FIB$ (Focused Ion Beam) system. We have compared work-function with ${\gamma}-FIB$ system current signal for measurement defect energy level in MgO layer. MgO-A in the three types has lowest work-function value (4.12eV) and there are two defect energy levels.