• Title/Summary/Keyword: Flow Resistivity

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The Effect of Transverse Magnetic field on Macrosegregation in vertical Bridgman Crystal Growth of Te doped InSb

  • Lee, Geun-Hee;Lee, Zin-Hyoung
    • Proceedings of the Korea Association of Crystal Growth Conference
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    • 1996.06a
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    • pp.522-522
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    • 1996
  • An investigation of the effects of transverse magnetic field and Peltier effect on melt convection and macrosegregation in vertical Bridgman crystal grosth of Te doped InSb was been carried out by means of microstructure observation, Hall measurement, electrical resistivity measurement and X-ray analysis. Before the experiments, Interface stability, convective instability and suppression of convection by magnetic field were calculated theoretically. After doping 1018, 1019 cm-3 Te in InSb, the temperature of Bridgman furnace was set up at $650^{\circ}C$. The samples were grown in I.D. 11mm, 100mm high quartz tube. The velocity of growth was about 2${\mu}{\textrm}{m}$/sec. In order to obtain the suppression of convection by magnetic field in the middle of growth, 2-4KG magnetic field was set on the melt. For searching of the shape of solid-liquid interface and the actual velocity of crystal growth, let 2A current flow from solid to liquid for 1second every 50seconds repeatedly (Peltier effect). The grown InSb was polycrystal, and each grain was very sharp. There was no much difference between the sample with and without magnetic field at a point of view of microstructure. For the sample with Peltier effect, the Peltier marks(striation) were observed regularly as expected. Through these marks, it was found that the solid-liquid interface was flat and the actual growth velocity was about 1-2${\mu}{\textrm}{m}$/sec. On the ground of theoretical calculation, there is thermosolutal convection in the Te doped InSb melt without magnetic field in this growth condition. and if there is more than 1KG magnetic field, the convection is suppressed. Through this experiments, the effective distribution coefficients, koff, were 0.35 in the case of no magnetic field, and 0.45 when the magnetic field is 2KG, 0.7 at 4KG. It was found that the more magnetic field was applied, the more convection was suppressed. But there was some difference between the theoretical calculation and the experiment, the cause of the difference was thought due to the use of some approximated values in theoretical calculation. In addition to these results, the sample with Peltier effect showed unexpected result about the Te distribution in InSb. It looked like no convection and no macrosegregation. It was thought that the unexpected behavior was due to Peltier mark. that is, when the strong current flew the growing sample, the mark was formed by catching Te. As a result of the phenomena, the more Te containing thin layer was made. The layer ruled the Hall measurement. The values of resistivity and mobility of these samples were just a little than those of other reference. It was thought that the reason of this result was that these samples were due to polycrystal, that is, grain boundaries had an influence on this result.

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Application of SP Monitoring in the Pohang Geothermal Field (포항 지열 개발지역에서의 SP 장기 관측)

  • Lim Seong Keun;Lee Tae Jong;Song Yoonho;Song Sung-Ho;Yasukawa Kasumi;Cho Byong Wook;Song Young Soo
    • Geophysics and Geophysical Exploration
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    • v.7 no.3
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    • pp.164-173
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    • 2004
  • To delineate geothermal water movement at the Pohang geothermal development site, Self-Potential (SP) survey and monitoring were carried out during pumping tests. Before drilling, background SP data have been gathered to figure out overall potential distribution of the site. The pumping test was performed in two separate periods: 24 hours in December 2003 and 72 hours in March 2004. SP monitoring started several days before the pumping tests with a 128-channel automatic recording system. The background SP survey showed a clear positive anomaly at the northern part of the boreholes, which may be interpreted as an up-flow Bone of the deep geothermal water due to electrokinetic potential generated by hydrothermal circulation. The first and second SP monitoring during the pumping tests performed to figure out the fluid flow in the geothermal reservoir but it was not easy to see clear variations of SP due to pumping and pumping stop. Since the area is covered by some 360 m-thick tertiary sediments with very low electrical resistivity (less than 10 ohm-m), the electrokinetic potential due to deep groundwater flow resulted in being seriously attenuated on the surface. However, when we compared the variation of SP with that of groundwater level and temperature of pumping water, we could identify some areas responsible to the pumping. Dominant SP changes are observed in the south-west part of the boreholes during both the preliminary and long-term pumping periods, where 3-D magnetotelluric survey showed low-resistivity anomaly at the depth of $600m\~1,000m$. Overall analysis suggests that there exist hydraulic connection through the southwestern part to the pumping well.

Spectral Induced Polarization Characteristics of Rocks in Gwanin Vanadiferous Titanomagnetite (VTM) Deposit (관인 함바나듐 티탄철광상 암석의 광대역 유도분극 특성)

  • Shin, Seungwook
    • Geophysics and Geophysical Exploration
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    • v.24 no.4
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    • pp.194-201
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    • 2021
  • Induced polarization (IP) effect is known to be caused by electrochemical phenomena at interface between minerals and pore water. Spectral induced polarization (SIP) method is an electrical survey to localize subsurface IP anomalies while injecting alternating currents of multiple frequencies into the ground. This method was effectively applied to mineral exploration of various ore deposits. Titanomagnetite ores were being produced by a mining company located in Gonamsan area, Gwanin-myeon, Pocheon-si, Gyeonggi-do, South Korea. Because the ores contain more than 0.4 w% vanadium, the ore deposit is called as Gwanin vanadiferous titanomagnetite (VTM) deposit. The vanadium is the most important of materials in production of vanadium redox flow batteries, which can be appropriately used for large-scale energy storage system. Systematic mineral exploration was conducted to identify presence of hidden VTM orebodies and estimate their potential resources. In geophysical exploration, laboratory geophysical measurement of rock samples is helpful to generate reliable property models from field survey data. Therefore, we performed laboratory SIP data of the rocks from the Gwanin VTM deposit to understand SIP characteristics between ores and host rocks and then demonstrate the applicability of this method for the mineral exploration. Both phase and resistivity spectra of the ores sampled from underground outcrop and drilling cores were different of those of the host rocks consisting of monzodiorite and quartz monzodiorite. Because the phase and resistivity at frequencies below 100 Hz are mainly dependent on the SIP characteristics of the rocks, we calculated mean values of the ores and the host rocks. The average phase values at 0.1 Hz were ores: -369 mrad and host rocks: -39 mrad. The average resistivity values at 0.1 Hz were ores: 16 Ωm and host rocks: 2,623 Ωm. Because the SIP characteristics of the ores were different of those of the host rocks, we considered that the SIP survey is effective for the mineral exploration in vanadiferous titanomagnetite deposits and the SIP characteristics are useful for interpreting field survey data.

The etch characteristic of TiN thin films by using inductively coupled plasma (유도결합 플라즈마를 이용한 TiN 박막의 식각 특성 연구)

  • Park, Jung-Soo;Kim, Dong-Pyo;Um, Doo-Seung;Woo, Jong-Chang;Heo, Kyung-Moo;Wi, Jae-Hyung;Kim, Chang-Il
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2009.06a
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    • pp.74-74
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    • 2009
  • Titanium nitride has been used as hardmask for semiconductor process, capacitor of MIM type and diffusion barrier of DRAM, due to it's low resistivity, thermodynamic stability and diffusion coefficient. Characteristics of the TiN film are high intensity and chemical stability. The TiN film also has compatibility with high-k material. This study is an experimental test for better condition of TiN film etching process. The etch rate of TiN film was investigated about etching in $BCl_3/Ar/O_2$ plasma using the inductively coupled plasma (ICP) etching system. The base condition were 4 sccm $BCl_3$ /16 sccm Ar mixed gas and 500 W the RF power, -50 V the DC bias voltage, 10 mTorr the chamber pressure and $40\;^{\circ}C$ the substrate temperature. We added $O_2$ gas to give affect etch rate because $O_2$ reacts with photoresist easily. We had changed $O_2$ gas flow rate from 2 sccm to 8 sccm, the RF power from 500 W to 800 W, the DC bias voltage from -50 V to -200 V, the chamber pressure from 5 mTorr to 20 mTorr and the substrate temperature from $20\;^{\circ}C$ to $80\;^{\circ}C$.

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Development of Riverbank Filtration Water Supply and Return System for Sustainable Green House Heating and Cooling (지속가능 온실 냉난방을 위한 강변여과수 취수 및 회수시스템 개발)

  • Cho, Yong;Kim, Dae-Geun;Kim, Hyoung-Soo;Moon, Jong-Pil
    • The KSFM Journal of Fluid Machinery
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    • v.15 no.2
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    • pp.20-29
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    • 2012
  • The green house on the waterfront is air-conditioned by a water-source heat pump system with riverbank filtration water. In order to supply riverbank filtration water in alluvium aquifer, the riverbank filtration facility for water intake and recharge, two pumping wells and one recharge well, has been constructed. The research site in Jinju, Korea was chosen as a good site for riverbank filtration water supply by the surface geological survey, electrical resistivity soundings, and borehole surveys. In the results of two boreholes drilling at the site, it was revealed that the groundwater table is about 3 m under the ground, and that the sandy gravel aquifer layer in the thickness of 6.5 m and 3.5 m occurs at 5 m and 7 m in depth below the ground level respectively. To prevent the recharge water from affecting the pumped water which might be used as heat source or sink, the distance between pumping and recharge wells is designed at least 70 m with a quarter of recharged flow rate. It is predicted that the transfer term, the recharge water affects the pumping well, is over 6 months of heating season. Hydrogeological simulation and underground water temperature measurement have been carried out for the pumping and recharge well positions in order to confirm the capability of sustainable green house heating and cooling.

Characteristics of conductive rubber belt on the abdomen to monitor respiration (호흡 감지를 위한 복부 부착형 전도성 고무소자의 계측특성)

  • Kim, Kyung-Ah;Kim, Sung-Sik;Cho, Dong-Wook;Lee, Seung-Jik;Lee, Tae-Soo;Cha, Eun-Jong
    • Journal of Sensor Science and Technology
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    • v.16 no.1
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    • pp.24-32
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    • 2007
  • Conductive rubber material was molded in a belt shape to measure respiration. Its resistivity was approximately $0.03{\;}{\Omega}m$ and the resistance-displacement relationship showed a negative exponent. The temperature coefficient was approximately $0.006{\;}k{\Omega}/^{\circ}C$ negligible when practically applied on the abdomen. The conductive rubber belt was applied on a normal male's abdomen with the dimensional change measured during resting breathing. The abdominal signal was differentiated ($F_{m}$) and compared with the accurate standard air flow rate signal ($F_{s}$) obtained by pneumotachometry. $F_{m}$ and $F_{s}$ differed in waveform, but the start and end timings of each breaths were clearly synchronized, demonstrating that the respiratory frequency could be accurately estimated before further processing of $F_{m}$. $F_{m}-F_{s}$ loop showed a nonlinear hysteresis within each breath period, thus 6 piecewise linear approximation was performed, leading to a mean relative error of 14 %. This error level was relatively large for clinical application, though customized calibration seemed feasible for monitoring general variation of ventilation. The present technique would be of convenient and practical application as a new wearable respiratory transducer.

Waveform analysis of leakage current on silicon insulator for various environment condition variation (환경조건변화에 대한 실리콘애자의 누설전류 파형분석)

  • Park, Jae-Jun
    • The Journal of Information Technology
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    • v.7 no.2
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    • pp.69-76
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    • 2004
  • This paper presents the results of spectral analysis about waveforms and leakage current waveforms on contaminated silicon insulators under various environment conditions.(salt fog, clean fog, rain). The larger the leakage current during 200ms, the higher the power spectrum at 60Hz. If contaminated insulators suffers from high salt density fog, the leakage current occurs with high crest value intermittently, results in the low spectrum. Analysis of leakage current data showed that this electrical activity was characterized by transient arcing behavior contaminants are deposited on the insulator surface during salt fog tests. This provides a path for the leakage current to flow along the surface of the insulator. It is important to have an indication of the pollution accumulation in order to evaluate the test performance of a particular insulator. If the drop in surface resistivity is severe enough, then the leakage current may escalate into service interrupting flashover that degrade power quality.

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Deposition of Indium Tin Oxide films on Polycarbonate substrates by Ion-Assisted deposition (IAD)

  • Cho, Jn-sik;Han, Young-Gun;Park, Sung-Chang;Yoon, Ki-Hyun;Koh, Seok-Keun
    • Proceedings of the Korean Vacuum Society Conference
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    • 1999.07a
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    • pp.98-98
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    • 1999
  • Highly transparent and conducting tin-doped indium oxide (ITO) films were deposited on polycarbonate substrate by ion-assited deposition. Low substrate temperature (<10$0^{\circ}C$) was maintained during deposition to prevent the polycarbonate substrate from be deformed. The influence of ion beam energy, ion current density, and tin doping, on the structural, electrical and optical properties of deposited films was investigated. Indium oxide and tin-doped indium oxide (9 wt% SnO2) sources were evaporated with assisting ionized oxygen in high vacuum chamber at a pressure of 2$\times$10-5 torr and deposition temperature was varied from room temperature to 10$0^{\circ}C$. Oxygen gas was ionized and accelerated by cold hallow-cathode type ion gun at oxygen flow rate of 1 sccm(ml/min). Ion bea potential and ion current of oxygen ions was changed from 0 to 700 V and from 0.54 to 1.62 $\mu$A. The change of microstructure of deposited films was examined by XRD and SEM. The electrical resistivity and optical transmittance were measured by four-point porbe and conventional spectrophotometer. From the results of spectrophotometer, both the refractive index and the extinction coefficient were derived.

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A High Voltage Poorer Supply for Electrostatic Precipitator with Superimposing Voltage Pulse on DC Source (펄스 및 직류 중첩형 전기집진기용 고전압 전원장치 개발 연구)

  • Kim, Jong-Soo;Rim, Geun-Hie;Lee, Sung-Jin;Kim, Seung-Min;Cho, Chang-Ho
    • The Transactions of the Korean Institute of Electrical Engineers B
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    • v.50 no.12
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    • pp.624-630
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    • 2001
  • The trend of the regulations on environmental issues are getting tight. Responding to this trend new technologies such as moving electrodes, wide pitch and pulsed power supply are also introduced in the electrostatic precipitator(EP) systems. The introduction of wide pitch and moving electrodes enhances the system performance of the EPs by improving air-flow and by improving the ash reentrainment on rapping. The power supplies for the EPs developed up to date include thyristor-based dc or intermittent type, SMPS(switching mode power supply) type and the pulsed-power supply type. The use of the pulsed ones is known to improve dust-collecting efficiency of high resistivity ash and reduces back corona occurrence in the collecting plate. There are two kinds of pulsed-power supplies; one with pulsed transformers and the other with direct dc switching devices. The latter uses rotary spark gap switches or semiconductor switches. Both have the merits and demerits: the spark gap switches are simple and robust but has short life time, hence, high maintenance cost, whereas the semiconductor switches have long life time but are costly. In this study, A high voltage power supply with superimposing voltage pulse on dc source was developed for EPs. This study describes circuit topology, operating principle of the scheme, and analysis of experimental results on Dong-Hae Power Plant. The pulsed power supply consists of a variable dc power supply with ratings of 60kV, 800mA and pulse generator which is made of high voltage thyristor-diode switch strings, an LC resonant tank and a blocking inductor. The pulse generator generates variable pulse-voltage up to 70kV using a high frequency resonant inverter with a variable dc source. Two prototypes were built and tested on 250MW DongHae power plant to verify the possibility of the commercial use and the normal operation in the transient states.

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Transparent Oxide Thin Film Transistors with Transparent ZTO Channel and ZTO/Ag/ZTO Source/Drain Electrodes

  • Choi, Yoon-Young;Choi, Kwang-Hyuk;Kim, Han-Ki
    • Proceedings of the Korean Vacuum Society Conference
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    • 2011.08a
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    • pp.127-127
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    • 2011
  • We investigate the transparent TFTs using a transparent ZnSnO3 (ZTO)/Ag/ZTO multilayer electrode as S/D electrodes with low resistivity of $3.24{\times}10^{-5}$ ohm-cm, and high transparency of 86.29% in ZTO based TFTs. The Transparent TFTs (TTFTs) are prepared on glass substrate coated 100 nm of ITO thin film. On atomic layer deposited $Al_2\;O_3$, 50 nm ZTO layer is deposited by RF magnetron sputtering through a shadow mask for channel layer using ZTO target with 1 : 1 molar ratio of ZnO : $SnO_2$. The power of 100W, the working pressure of 2mTorr, and the gas flow of Ar 20 sccm during the ZTO deposition. After channel layer deposition, a ZTO (35 nm)/Ag (12 nm)/ZTO(35 nm) multilayer is deposited by DC/RF magnetron sputtering to form transparent S/D electrodes which are patterned through the shadow mask. Devices are annealed in air at 300$^{\circ}C$ for 30 min following ZTO deposition. Using UV/Visible spectrometer, the optical transmittances of the TTFT using ZTO/Ag/ ZTO multilayer electrodes are compared with TFT using Mo electrode. The structural properties of ZTO based TTFT with ZTO/Ag/ZTO multilayer electrodes are analyzed by high resolution transmission electron microscopy (HREM) and X-ray photoelectron spectroscopy (XPS). The transfer and output characterization of ZTO TTFTs are examined by a customized probe station with HP4145B system in are.

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