• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.11a
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• pp.204-207
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• 2003

This paper presents the electrical properties of PTFE (polytetrafluoroethylene) nozzle for circuit breaker. PTFE has been used widely as a nozzle material for circuit breaker. In the arcing environment in a circuit breaker, radiation is considered to be the major energy transport mechanism from the arc to the wall. The fraction of the radiation power is emitted out of the arc and reaches the nozzle wall, causing ablation at the surface and in the depth of the wall. The energy concentration in the material lead to the depolymerization and eventually lead to the generation of decomposed gas as well as some isolated carbon particles. The generation of the decomposed gas in the depth of the material causes inner explosion. The surface of nozzle becomes uneven. The flow of gas is not uniform due to the unevenness of the surface. Adding some fillers into PTFE is expected to be efficient for improving the endurability against radiation. In this experiment, three kinds of fillers that have endurance in the high temperature environment were added into PTFE. Dielectric constant, dissipation factor, electrical resistivity and dielectric strength of PTFE composites were investigated.

• The Journal of Engineering Geology
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• v.25 no.1
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• pp.45-55
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• 2015

Purifying leachate discharged from animal carcass disposal sites requires decisions regarding the locations and numbers of boreholes. An electrical resistivity survey, known to be effective for investigating leachate distribution, was performed to evaluate the range extent of contamination due to local hydrological properties, such as groundwater flow direction, and geological structure. Results of the survey at four sites at a landfill near Icheon and Anseong, Gyeonggi Province, showed low-resistivity zones (20-200 ohm-m) at a depth of 8 m from the surface. Sites 1-4, which contain 5, 2, 4, and 2 boreholes, respectively, were estimated to have a contaminated groundwater acquisition capability of 12.9 m, 13.7 m, 10.1 m, and 18.0 m, and measured pumping capacity of 2,040 m³, 479.8 m³, 1,492.3 m³, and 691.9 m³, respectively.

• Journal of the Korean Geophysical Society
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• v.3 no.2
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• pp.113-126
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• 2000

We have conducted multiple geophysical surveys to investigate the geoenvironmental change of the Nanjido Landfill due to the stabilization process. Geophyscial surveys are comprized of gravity, magnetic, dipole-dipole electrical and SP methods. Due to the field conditions, surveys were conducted on the top surface of the landfill no.2 and southern border areas in front of landfills. The gravity anomalies obtained on the top surface of the landfill no.2 in 1999 show that the gradient of the anomaly on the central area is decreasing in comparison with that observed four years ago. The complexity of magnetic anomaly pattern it also decreasing. These facts suggest that the stabilization work of the Nanjido landfill makes some progress by compaction process due to repetitive subsidence and refilling. The dipole-dipole electrical resistivity and SP data obtained on the outside of the waterproof wall at the landfill no.1 were severely affected by unsatisfactory surface conditions. On the other hand, the dipole-dipole electrical resistivity profiles obtained on the inside and outside parts of the waterproof wall at the landfill no.2 show the blocking effect of leachate flow by the waterproof wall. Few SP anomalies are observed on the top and side surfaces of the landfill no.2, but SP anomalies obtained on the base area inside the waterproof wall strongly reflect the effect of leachate collecting wells.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.27 no.9
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• pp.582-588
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• 2014

3 mol% Co-added $Ni(OH)_2$ fine powders, which showed ${\beta}$-phase, as positive electrode materials have been fabricated using $NiSO_4{\cdot}6H_2O$ aqueous solution by ultrasonic spray-chemical precipitation and subsequent hydrothermal method, and sheet-like Ni nanopowder was fabricated by mechano-chemical reduction method. The addition effects of the sheet-like Ni nanopowder on the electrochemical properties of the positive electrode in Ni-Zn Redox flow battery were investigated. Impedance spectroscopy revealed that the addition of the sheet-like Ni nanopowder resulted in decrease in the electrical resistivity; 10 wt.% addition reduced the electrical properties by a fifth. Cyclic voltammetry showed the addition of the sheet-like Ni nanopowder resulted in decrease in the potential difference of oxidation and reduction; this means the increase in the reversability for electrode reduction. Charge/discharge measurement confirmed that the addition of the sheet-like Ni nanopowder resulted in the increase in the discharge efficiency.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.08a
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• pp.168-168
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• 2010

Transparent conduction oxides (TCOs) films is extensively reported for optoelectronic devices application such as touch panels, solar cells, liquid crystal displays (LCDs), and organic light emitting diodes(OLEDs). Among the many TCO film, indium tin oxide(ITO) is in great demand due to the growth of flat panel display industry. However, indium is not only high cost but also its deposits dwindling. Therefore, many studies are being done on the transparent conductive oxides(TCOs). We fabricated a target of IZTO(In2O3:ZnO:SnO2=70:15:15 wt.%) reduced indium. Then, IZTO thin films were deposited on glass substrates by pulsed DC magnetron sputtering with various oxygen flow ratio. The substrate temperature was fixed at the room temperature. We investigated the electrical, optical, structural properties of IZTO thin films. The electrical properties of IZTO thin films were dependent on the oxygen partial pressure. As a result, the most excellent properties of IZTO thin films were obtained at the 3% of oxygen flow rate with the low resistivity of $7.236{\times}10^{-4}{\Omega}cm$. And also the optical properties of IZTO thin films were shown the good transmittance over 80%. These IZTO thin films were used to fabricated organic light emitting diodes(OLEDs) as anode and the device performances studied. The OLED with an IZTO anode deposited at optimized deposition condition showed good brightness properties. Therefore, IZTO has utility value of TCO electrode although it reduced indium and we expect it is possible for the IZTO to apply to flexible display due to the low processing temperature.

• Journal of the Semiconductor & Display Technology
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• v.10 no.2
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• pp.39-44
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• 2011

In this study, we have investigated the structural and electrical characteristics of IZO thin films deposited on flexible substrate for the OLED (organic light emitting diodes) devices. For this purpose, PES was used for flexible substrate and IZO thin films were deposited by RF magnetron sputtering under oxygen ambient gases (Ar, $Ar+O_2$) at room temperature. In order to investigate the influences of the oxygen, the flow rate of oxygen in argon mixing gas has been changed from 0.1sccm to 0.5sccm. All the samples show amorphous structure regardless of flow rate. The electrical resistivity of IZO films increased with increasing flow rate of $O_2$ under $Ar+O_2$. All the films showed the average transmittance over 85% in the visible range. The OLED device was fabricated with different IZO electrodes made by configuration of IZO/a-NPD/DPVB/$Alq_3$/LiF/Al to elucidate the performance of IZO substrate. OLED devices with the amorphous-IZO (a-IZO) anode film show better current density-voltage-luminance characteristics than that of OLED devices with the commercial crystalline-ITO (c-ITO) anode film. It can be explained that very flat surface roughness and high work function of a-IZO anode film lead to more efficient hole injection by reduction of interface barrier height between anode and organic layers. This suggests that a-IZO film is a promising anode materials substituting conventional c-ITO anode in OLED devices.

• Journal of the Korean institute of surface engineering
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• v.49 no.1
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• pp.92-97
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• 2016

The plasma has been used in various industrial fields of semiconductors, displays, transparent electrode and so on. Plasma diagnostics is critical to the uniform process and the product. We use the electron temperature of the various plasma parameters for the diagnosis of plasma. Generally, the range of the electron temperature which is used in a semiconductor process used the range of 1 eV to 10 eV. The difference of electron temperature of 0.5 eV has a influence in plasma process. The electron temperature can be measured by the electrical method and the optical method. Measurement of electron temperature for various gas flow rates was performed in DC-magnetron sputter and Inductively Coupled Plasma. The physical properties of the thin film were also determined by changing electron temperatures. The transmittance was measured using the integrating sphere, and wavelength range was measured at 300 ~ 1100 nm. We obtain the thin film of the mobility, resistivity and carrier concentration using the hall measurement system. As to the electron temperature increase, optical and electrical properties decrease. We determine it was influenced by the oxygen flow ratio and plasma.

• Korean Journal of Materials Research
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• v.18 no.1
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• pp.32-37
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• 2008

The electrical, optical, structural and surface properties of an indium tin oxide (ITO) film grown on a flexible PET substrate using a specially designed roll-to-roll (R2R) sputtering system as a function of the DC power, $Ar/O_2$ flow ratio, and rolling speed is reported. It was observed that both the electrical and optical properties of the ITO film on the PET substrate were critically dependent on the $Ar/O_2$ flow ratio. In addition, x-ray diffraction examination results showed that the structure of the ITO film on the PET substrate was an amorphous structure regardless of the DC power and the $Ar/O_2$ flow ratio due to a low substrate temperature, which was maintained constant by a main cooling drum. Under optimized conditions, ITO film with resistivity of $6.44{\times}10^{-4}{\Omega}-cm$ and transparency of 86% were obtained, even when prepared at room temperature. Furthermore, bending test results exhibited that R2R-grown ITO film had good flexibility which would be applicable to flexible displays and solar cells.

• The Journal of Engineering Geology
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• v.20 no.4
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• pp.449-459
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• 2010

We performed numerical simulations of the excavation of an underground structure (the Giheung Tunnel) in order to evaluate the rate of groundwater flow into the structure and to estimate the groundwater level around the structure. The tunnel was constructed in Precambrian bedrock in Gyeonggi Province, South Korea. Geological and electrical resistivity data, as well as hydraulic test data, were used for the numerical modeling. The modeling took into account the strike-slip faults that cross the southern part of Giheung Tunnel, as these structures influence the discharge of groundwater into the tunnel. The transient modeling estimated a groundwater flow rate into the tunnel of $306\;m^3$/day, with a grout efficiency of 40%, yielding good agreement between the calculated change in groundwater level (6.20 m) and that observed (6.30 m) due to tunnel excavation.

• Korean Journal of Materials Research
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• v.9 no.12
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• pp.1196-1204
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• 1999

We have carried out copper MOCVD(metalorganic chemical vapor deposition) onto the reactive sputtered PVD-TiN and rapid thermal converted RTP-TiN substrates using direct liquid injection for effective delivery of the (hfac)Cu(vtmos) [$C_{10}H_{13}O_{5}CuF_{6}$Si: 1,1,1,5,5,5-hexafluoro-2,4- pentadionato (vinyltrimethoxysilane) copper (I)] precursor. Especially, the influences of deposition conditions and the substrate type on growth rate, crystal structure, microstructure, and electrical resistivity of copper deposits have been discussed. It is found that the film growth with 0.2ccm precursor flow rate become mass-transfer controlled up to Ar flow rate of 200sccm and pick-up rate controlled at a vaporizer above 1.0Torr reactor pressure. The surface-reaction controlled region from 155 to 225$^{\circ}C$ at 0.6Torr reactor pressure results in the apparent activation energies of 12.7~14.1kcal/mol, and above 224$^{\circ}C$ the growth rate with $H_2$ addition could be improved compared to the pure Ar carrier. The Cu/RTP-TiN structures which have high copper nucleation density in initial stage of growth show more pronounced (111) preferred orientations and lower electrical resistivities than those on PVD-TiN. The variation of electrical resistivity with substrate temperature reflects the three types of film microstructure changes, showing the lowest value for the deposit at 165$^{\circ}C$ with small grains of good contacts.