• 한국항해항만학회지
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• 제31권3호
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• pp.173-178
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• 2007

해상교통관리 방법 중에서 국내외적으로 혼잡한 해역에서의 해상교통 흐름을 정류하여 통항선박의 해상교통 안전성을 향상시키는 방법 중 주로 이용되고 있는 것은 항로 설정 및 통항분리대의 설정이다. 항로 및 통항분리대의 설정 시 지침이 되는 설계지침 가운데 국내외적으로 항로 설계지침은 존재하지만 통항분리대에 대한 설계지침에 대한 언급은 어느 문헌에도 없어 전문가의 주관적 판단에 의하여 설정이 되고 있는 실정이다. 현재까지 통항분리대의 설정 시 해양사고의 감소효과에 대한 연구는 다소 있지만, 통항분리대의 설계지침에 대한 연구는 없다. 본 연구는 통항선박의 안전을 위하여 설정되는 통항분리제도에 대한 설계지침을 선박 운항자의 관점에서 본 정량적 수치로 제공하고자 한다. 특히 통항분리대는 많은 선박의 통항을 분리하기 위한 제도이기 때문에 통항하는 선박의 교통용량을 고려하여 설계하였다.

• 한국항해항만학회:학술대회논문집
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• 한국항해항만학회 2006년도 추계학술대회 논문집(제1권)
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• pp.65-70
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• 2006

해상교통관리 방법 중에서 국내외적으로 폭주하는 해역에서의 해상교통 흐름을 정류하여 통항선박의 해상교통 안전성을 향상 시키는 방법 중 주로 이용되고 있는 것은 항로 설정 및 통항분리대의 설정이다. 항로 및 통항분리대의 설정 시 지침이 되는 설계지침 가운데 국내외적으로 항로 설계지침은 존재하지만 통항분리대에 대한 설계지침에 대한 언급은 어느 문헌에도 없어 전문가의 주관적 판단에 의하여 설정이 되고 있는 실정이다. 현재까지 통항분리대의 설정 시 해양사고의 감소효과에 대한 연구는 다소 있지만, 통항분리대의 설계지침에 대한 연구는 없다. 본 연구는 통항선박의 안전을 위하여 설정되는 통항분리제도에 대한 설계지침을 선박 운항자의 관점에서 본 정량적 수치로 제공하고자 한다. 특히 통항분리대는 많은 선박의 통항을 분리하기 위한 제도이기 때문에 통항하는 선박의 교통용량을 고려하여 설계하였다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2008년도 추계학술대회 논문집 Vol.21
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• pp.11-11
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• 2008

ZnO has a very large exciton binding energy (60 meV) as well as thermal and chemical stability, which are expected to allow efficient excitonic emission, even at room temperature. ZnO based electronic devices have attracted increasing interest as the backplanes for applications in the next-generation displays, such as active-matrix liquid crystal displays (AMLCDs) and active-matrix organic light emitting diodes (AMOLEDs), and in solid state lighting systems as a substitution for GaN based light emitting diodes (LEDs). Most of these electronic devices employ the electrical behavior of n-type semiconducting active oxides due to the difficulty in obtaining a p-type film with long-term stability and high performance. p-type ZnO films can be produced by substituting group V elements (N, P, and As) for the O sites or group I elements (Li, Na, and K) for Zn sites. However, the achievement of p-type ZnO is a difficult task due to self-compensation induced from intrinsic donor defects, such as O vacancies (Vo) and Zn interstitials ($Zn_i$), or an unintentional extrinsic donor such as H. Phosphorus (P) doped ZnO thin films were grown on c-sapphire substrates by radio frequency magnetron sputtering with various Ar/ $O_2$ gas ratios. Control of the electrical types in the P-doped ZnO films was achieved by varying the gas ratio with out post-annealing. The P-doped ZnO films grown at a Ar/ $O_2$ ratio of 3/1 showed p-type conductivity with a hole concentration and hole mobility of $10^{-17}cm^{-3}$ and $2.5cm^2/V{\cdot}s$, respectively. X-ray diffraction showed that the ZnO (0002) peak shifted to lower angle due to the positioning of $p^{3-}$ ions with a smaller ionic radius in the $O^{2-}$ sites. This indicates that a p-type mechanism was due to the substitutional Po. The low-temperature photoluminescence of the p-type ZnO films showed p-type related neutral acceptor-bound exciton emission. The p-ZnO/n-Si heterojunction LEO showed typical rectification behavior, which confirmed the p-type characteristics of the ZnO films in the as-deposited status, despite the deep-level related electroluminescence emission.

• The Korean Journal of Physiology and Pharmacology
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• 제3권1호
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• pp.1-10
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• 1999

We sought to find out the mechanism of vascular relaxation by extracellular $K^+$ concentration $([K^+]_o)$ in the cerebral resistant arteriole from rabbit. Single cells were isolated from the cerebral resistant arteriole, and using voltage-clamp technique barium-sensitive $K^+$ currents were recorded, and their characteristics were observed. Afterwards, the changes in membrane potential and currents through the membrane caused by the change in $[K^+]_o$ was observed. In the smooth muscle cells of cerebral resistant arteriole, ion currents that are blocked by barium, 4-aminopyridine (4-AP), and tetraethylammonium (TEA) exist. Currents that were blocked by barium showed inward rectification. When the $[K^+]_o$ were 6, 20, 60, and 140 mM, the reversal potentials were $-82.7{\pm}1.0,\;-49.5{\pm}1.86,\;-26{\pm}1.14,\;-5.18{\pm}1.17$ mV, respectively, and these values were almost identical to the calculated $K^+$ equilibrium potential. The inhibition of barium-sensitive inward currents by barium depended on the membrane potential. At the membrane potentials of -140, -100, and -60 mV, $K_d$ values were 0.44, 1.19, and 4.82 ${\mu}M,$ respectively. When $[K^+]_o$ was elevatedfrom 6 mM to 15 mM, membrane potential hyperpolarized to -50 mV from -40 mV. Hyperpolarization by $K^+$ was inhibited by barium but not by ouabain. When the membrane potential was held at resting membrane potential and the $[K^+]_o$ was elevated from 6 mM to 15 mM, outward currents increased; when elevated to 25 mM, inward currents increased. Fixing the membrane potential at resting membrane potential and comparing the barium-sensitive outward currents at $[K^+]_o$ of 6 and 15 mM showed that the barium- sensitive outward current increased at 15 mM $K^+.$ From the above results the following were concluded. Barium-sensitive $K^+$?channel activity increased when $[K^+]_o$ is elevated and this leads to an increase in $K^+-outward$ current. Consequently, the membrane potential hyperpolarizes, leading to the relaxation of resistant arteries, and this is thought to contribute to an increase in the local blood flow of brain.