• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2009년도 9th International Meeting on Information Display
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• pp.1002-1004
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• 2009

Solution-processed indium-gallium-zinc-oxide thin-film transistors were fabricated by sol-gel method. By a combinatorial study of InGaZnO multi-component system, optimum molar ratio of In, Ga, and Zn has been selected. By adjusting the In:Ga:Zn molar ratio, TFTs with field-effect mobility of 0.5 ~ 1.5 $cm^2$/V-s, threshold voltage of -5 ~ 5 V, and subthreshold slope of 1.5 ~ 2.5 V/decade were achieved.

• 제어로봇시스템학회:학술대회논문집
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• 제어로봇시스템학회 2000년도 제15차 학술회의논문집
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• pp.61-61
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• 2000

Since FMS(Flexible Manufacturing System) such as semiconductor production systems have the characteristic that each device has to be commonly used in several stages, it is difficult to find an optimal solution. In this paper, we proposed the new algorithm which can get the optimal ratio of sharing resources. We will implement the proposed algorithm to semiconductor production systems. We introduce the optimal algorithm, which is modeled and analyzed by ExSpect, a petri net based simulation tool. When there exist conflicts of sharing resources, the scheduling method is adopted, which gives a priority to the most preceded process. The suggested algorithm can be used not only in semiconductor production systems but also in various FMS.

• Journal of Information Display
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• 제6권3호
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• pp.12-17
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• 2005

The need for low cost, flexible, thin film transistor (TFT) display backplanes has focused attention on new processing techniques and materials. We report the development of TFT backplane technology based entirely on jet-printing, using a combination of additive and subtractive processing, to print active materials or etch masks. The technique eliminates the use of photolithography and has the potential to reduce the array manufacturing cost. The printing technique is demonstrated with both amorphous silicon and polymer semiconductor TFT arrays, and we show results of small prototype displays.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2011년도 제40회 동계학술대회 초록집
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• pp.114-114
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• 2011

We report a high-performance and air-stable flexible and invisible semiconductor which can be substitute for the n-type organic semiconductors. N-type organic-inorganic nanohybrid superlattices were developed for active semiconducting channel layers of thin film transistors at low temperature of $150^{\circ}C$ by using molecular layer deposition with atomic layer deposition. In these nanohybrid superlattices, self-assembled organic layers (SAOLs) offer structural flexibility, whereas ZnO inorganic layers provide the potential for semiconducting properties, and thermal and mechanical stability. The prepared SAOLs-ZnO nanohybrid thin films exhibited good flexibility, transparent in the visible range, and excellent field effect mobility (> 7cm2/$V{\cdot}s$) under low voltage operation (from -1 to 3V). The nanohybrid semiconductor is also compatible with pentacene in p-n junction diodes.

• 한국정밀공학회:학술대회논문집
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• 한국정밀공학회 2006년도 춘계학술대회 논문집
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• pp.595-596
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• 2006

The flexible organic thin film transistor (OTFT) array to use as a switching device for an organic light emitting diode (OLED) was designed and fabricated in the microcontact printing and low-temperature processes. The gate, source, and drain electrode patterns of OTFT were fabricated by microcontact printing which is high-resolution lithography technology using polydimethylsiloxane(PDMS) stamp. The OTFT array with dielectric layer and organic active semiconductor layers formed at room temperature or at a temperature tower than $40^{\circ}C$. The microcontact printing process using SAM(self-assembled monolayer) and PDMS stamp made it possible to fabricate OTFT arrays with channel lengths down to even nano size, and reduced the procedure by 10 steps compared with photolithography. Since the process was done in low temperature, there was no pattern transformation and bending problem appeared. It was possible to increase close packing of molecules by SAM, to improve electric field mobility, to decrease contact resistance, and to reduce threshold voltage by using a big dielecric.

• 반도체디스플레이기술학회지
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• 제22권1호
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• pp.33-38
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• 2023

As the demand for large flexible displays such as tablet computers continues to rise, there is an increasing need for cost-efficient colorless and optically transparent polyimide film that can meet the desired performance, particularly optical transmittance. In this study, we investigated a detailed procedure for achieving optimal optical transmittance using two different combinations of monomers: 6FDA+BAPB and 6FDA+BPA+TFDB. We employed a design of experiment method to systematically synthesize polymers, allowing for the optimization of optical transmittance. In addition, we were able to achieve uniform thickness in the films by using a doctor blade. By comparing the price and optical transmittance of four different monomer combinations, we obtained fundamental data on the production of polyimide films that can be customized to meet the specific price and performance requirements of manufacturers. This approach enables users to select the most suitable polyimide film based on their desired price and performance parameters while achieving optimal optical transmittance.

• 반도체디스플레이기술학회지
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• 제22권3호
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• pp.101-105
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• 2023

Organic photo Diodes (OPDi) give multiple advantages in the growing interest of the flexible optoelectronic devices. Organic semiconductors are freeform as they can deposit on any substrate, so it could be flexible. But the inorganic material photodiodes (PDs) are usually fabricated on silicon wafers which are solid. So, normally PDs are inflexible. By those reasons, we decided to make the vacuum deposited small molecule OPDi. We have investigated the OPDi's J-V characteristic by changing the thickness of p-type layer of OPDi. This device consists of indium-tin-oxide (ITO) / 2,3:6,7-dibenzanthracene (pentacene) / buckminsterfullerene (C60) / aluminum (Al). Its J-V characteristics were measured in the probe station(4156C) that can give dark condition while measuring. And for the luminance characteristics, the photocurrent was measured with the bright halogen lamp and a probe station.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2013년도 제45회 하계 정기학술대회 초록집
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• pp.76.1-76.1
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• 2013

Atomic Layer Deposition (ALD) has remarkably developed in semiconductor and nano-structure applications since early 1990. Now, the advantages of ALD process are well-known as controlling atomic-level-thickness, manipulating atomic-level-composition control, and depositing impurity-free films uniformly. These unique properties may accelerate ALD related industries and applications in various functional thin film markets. On the other hand, one of big markets, Display industry, just starts to look at the potential to adopt ALD functional films in emerging display applications, such as transparent and flexible displays. Unlike conventional ALD process strategies (good quality films and stable precursors at high deposition processes), recently major display industries have suggested the following requirements: large area equipment, reasonable throughput, low temperature process, and cost-effective functional precursors. In this talk, it will be mentioned some demands of display industries for applying ALD processes and/or functional films, in terms of emerging display technologies. In fact, the AMOLED (active matrix organic light emitting diode) Television markets are just starting at early 2013. There are a few possibilities and needs to be developing for AMOLED, Flexible and transparent Display markets. Moreover, some basic results will be shown to specify ALD display applications, including transparent conduction oxide, oxide semiconductor, passivation and barrier films.

• Current Optics and Photonics
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• 제7권6호
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• pp.755-760
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• 2023

In this paper, an illumination optical system that can mitigate the saturation phenomenon in the center of an image (caused by the typical flexible-endoscope illumination system using LEDs with Lambertian light distribution) is designed. When an LED with Lambertian light distribution is used as a light source, the amount of light in the center of the endoscopic illumination system is relatively high, compared to the periphery, causing saturation in the image. Since this phenomenon causes difficulty in detecting the patient's lesion, it is necessary to find a lighting-system design that can alleviate the saturation phenomenon. Therefore, in this paper a lighting system with bat-wing light distribution, which can lower the intensity at the center and secure the maximum amount of light at the maximum light distribution angle, is designed. In addition, to check the performance of the designed lighting system, a simulation of illumination and luminance is conducted for a system using a common aspherical lens with otherwise the same components. As a result, it is confirmed that the lighting system designed in this paper effectively reduces the luminance value at the center and secures more luminance values at the periphery than the familiar lighting system.

• 마이크로전자및패키징학회지
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• 제23권2호
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• pp.79-84
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• 2016

유연전자소자가 외부힘에 의해 변형될 경우 반도체 다이가 기계적 응력 때문에 변형되거나 파괴되고 이러한 변형이나 파괴는 channel의 전자이동도를 변화시키거나 배선의 저항을 증가시켜 집적회로의 동작 오류를 발생시킨다. 따라서 반도체 집적회로는 굽힘 변형이 발생해도 기계적 응력이 발생하지 않는 중립축에 위치하는 것이 바람직하다. 본 연구에서는 굽힘변형을 하는 flip-chip 접합공정이 적용된 face-down flexible packaging system에서 중립축의 위치와 파괴 모드를 조사하였고 반도체 집적회로와 집중응력이 발생한 곳의 응력을 감소시킬 수 있는 방법을 제시하였다. 이를 위해, 설계인자로 유연기판의 두께 및 소재, 반도체 다이의 두께를 고려하였고 설계인자가 중립축의 위치에 미치는 영향을 조사한 결과 유연기판의 두께가 중립축의 위치를 조절하는데 유용한 설계인자임을 알 수 있었다. 3차원 모델을 이용한 유한요소해석 결과 반도체 다이와 유연기판 사이의 Cu bump 접합부에서 항복응력보다 높은 응력이 인가될 수 있음을 확인하였다. 마지막으로 flexible face-down packaging system에서 반도체 다이와 Cu bump 의 응력을 감소시킬 수 있는 설계 방법을 제안하였다.