• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2009년도 9th International Meeting on Information Display
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• pp.557-559
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• 2009

We attempted modulation of hydrogen dilution ratio to achieve both the minimal incubation layer and high deposition rate. The incubation layer thickness was estimated by transmission electron microscopy (TEM) and crystallization fraction was measured by Raman spectroscopy.

• 한국전자통신학회논문지
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• 제14권1호
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• pp.87-96
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• 2019

유기 박막 트랜지스터 (OTFT) 백플레인을 이용한 유연한 유기 발광 다이오드 (OLED) 디스플레이가 연구되고 있다. OLED 디스플레이의 구동을 위해서 게이트 드라이버가 필요하다. 저온, 저비용 및 대 면적 인쇄 프로세스를 사용하는 디스플레이 패널의 내장형 게이트 드라이버는 제조비용을 줄이고 모듈 구조를 단순화한다. 이 논문에서는 유연한 OLED 디스플레이 패널의 내장형 게이트 드라이버 제작을 위하여 OTFT를 사용한 의사 CMOS (pseudo complementary metal oxide semiconductor) 로직 게이트를 구현한다. 잉크젯 인쇄형 OTFT 및 디스플레이와 동일한 프로세스를 사용하여 유연한 플라스틱 기판 상에 의사 CMOS 로직 게이트가 설계 및 제작되며, 논리 게이트의 동작은 측정 실험에 의해 확인된다. 최대 1 kHz의 입력 신호 주파수에서 의사 CMOS 인버터의 동작 결과를 통하여 내장형 게이트 드라이버의 구현 가능성을 확인하였다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2006년도 추계학술대회 논문집 Vol.19
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• pp.149-150
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• 2006

A ZnO nanowire-based FET is fabricated m this study on a flexible substrate of PES. For the flat and bent flexible substrates, the current ($I_D$) versus drain-source bias voltage ($V_{DS}$) and $I_D$ versus gate voltage ($V_G$) results are compared. The flat band was Ion/Ioff ratio of ${\sim}10^7$, a transconductance of 179 nS and a mobility of ~10.104 cm2/Vs at $V_{DS}$ =1 V. Also bent to a radius curvature of 0.15cm and experienced by an approximately strain of 0.77 % are exhibited an Ion/Ioff ratio of ${\sim}10^7$, a transconductance of ~179 nS and a mobility of ${\sim}10.10 cm^2/Vs$ at $V_{DS}$ = 1V. The electrical characteristics of the FET are not changed very much. although the large strain is given on the device m the bent state.

• 한국재료학회지
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• 제26권11호
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• pp.635-643
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• 2016

Graphene has shown exceptional properties for high performance devices due to its high carrier mobility. Of particular interest is the potential use of graphene nanoribbons as field-effect transistors. Herein, we introduce a facile approach to the fabrication of graphene nanoribbon (GNR) arrays with ~200 nm width using nanoimprint lithography (NIL), which is a simple and robust method for patterning with high fidelity over a large area. To realize a 2D material-based device, we integrated the graphene nanoribbon arrays in field effect transistors (GNR-FETs) using conventional lithography and metallization on highly-doped $Si/SiO_2$ substrate. Consequently, we observed an enhancement of the performance of the GNR-transistors compared to that of the micro-ribbon graphene transistors. Besides this, using a transfer printing process on a flexible polymeric substrate, we demonstrated graphene-silicon junction structures that use CVD grown graphene as flexible electrodes for Si based transistors.

• Journal of Information Display
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• 제12권1호
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• pp.5-10
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• 2011

A novel architecture and proprietary electronic inks were developed to provide disruptive digital-media solutions based on an electrokinetic technology platform. The flexible reflective electronic media (eMedia) was fabricated by imprinting three-dimensional microscale structures with a roll-to-roll manufacturing platform. The HP technologies enable the required attributes for eMedia, such as low power, transparency, print-quality color, continuous levels of gray, and lowcost scalability. Pixelation was also demonstrated by integrating with the prototype oxide thin-film transistor backplane, and the system architecture was further developed by stacking primary-colorant layers for color reflective-display application. The innovations described in this paper are currently being developed further for the eSkins, eSignage, and ePaper applications.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2006년도 하계학술대회 논문집 Vol.7
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• pp.71-72
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• 2006

We report on plasma damage free chemical vapor deposition technique for the thin film passivation of organic light emitting diodes (OLEDs), organic thin film transistor (OTFT) and flexible displays using catalyzer enhanced chemical vapor deposition (CECVD). Specially designed CECVD system has a ladder-shaped tungsten catalyzer and movable electrostatic chuck for low temperature deposition process. The top emitting OLED with thin film $SiN_x$ passivation layer shows electrical and optical characteristics comparable to those of the OLED with glass encapsulation. This indicates that the CECVD technique is a promising candidate to grow high-quality thin film passivation layer on OLED, OTFT, and flexible displays.

• Journal of Industrial and Engineering Chemistry
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• 제68권
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• pp.399-405
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• 2018

We report the fabrication of organic field-effect transistors (OFETs) via spray coating of electrochemically exfoliated graphene (EEG) and conducting polymer hybrid as electrodes. To reduce the roughness and sheet resistance of the EEG electrodes, subsequent coating of conducting polymer (poly(3,4-ethylenedioxythiophene)-poly(styrenesulfonate) (PEDOT:PSS)) and acid treatment was performed. After that, active channel layer was developed by spin coating of semiconducting poly(3-hexylthiophene) on the hybrid electrodes to define the bottom gate bottom contact configuration. The OFET devices with the EEG/PEDOT:PSS hybrid electrodes showed a reasonable electrical performances (field effect mobility = $0.15cm^2V^{-1}\;s^{-1}$, on/off current ratio = $10^2$, and threshold voltage = -1.57V). Furthermore, the flexible OFET devices based on the Polydimethlsiloxane (PDMS) substrate and ion gel dielectric layer exhibited higher electrical performances (field effect mobility = $6.32cm^2V^{-1}\;s^{-1}$, on/off current ratio = $10^3$, and threshold voltage = -1.06V) and excellent electrical stability until 1000 cycles of bending test, which means that the hybrid electrode is applicable to various organic electronic devices, such as flexible OFETs, supercapacitors, organic sensors, and actuators.

• Bulletin of the Korean Chemical Society
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• 제34권4호
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• pp.1035-1038
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• 2013

Rolling circle amplification (RCA) of DNA on an aligned-carbon nanotube (a-CNT) surface was electrically interfaced by the a-CNT based filed effect transistor (FET). Since the electric conductance of the a-CNT will be dependent upon its local electric environment, the electric conductance of the FET is expected to give a very distinctive signature of the surface reaction along with this isothermal DNA amplification of the RCA. The a-CNT was initially grown on the quartz wafer with the patterned catalyst by chemical vapor deposition and transferred onto a flexible substrate after the formation of electrodes. After immobilization of a primer DNA, the rolling circle amplification was induced on chip with the a-CNT based FET device. The electric conductance showed a quite rapid increase at the early stage of the surface reaction and then the rate of increase was attenuated to reach a saturated stage of conductance change. It took about an hour to get the conductance saturation from the start of the conductance change. Atomic force microscopy was used as a complementary tool to support the successful amplification of DNA on the device surface. We hope that our results contribute to the efforts in the realization of a reliable nanodevice-based measurement of biologically or clinically important molecules.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2007년도 7th International Meeting on Information Display 제7권1호
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• pp.926-929
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• 2007

A significant progress has been made in the characterization of zinc oxide (ZnO) semiconductor as a new semiconductor layer instead of amorphous Si semiconductor used in thin film transistor due to its high electron mobility at low deposition temperature which is quite suitable for flexible display and OLED devices. The wet pattering of ZnO is another important issue with regard to mass production of ZnO thin film transistor device. However, the wet behavior of ZnO thin film in aqueous wet etching solutions conventionally used un TFT industry has not been reported yet, in this work, wet corrosion behavior of RF magnetron sputtered ZnO thin film in various wet solutions such as phosphoric and nitric acid solutions was studied using by electrochemical analysis. The effects of deposition parameters such as RF power and oxygen partial pressure on corrosion rate are also examined.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2007년도 7th International Meeting on Information Display 제7권1호
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• pp.155-158
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• 2007

Printed organic thin-film transistor(OTFT) to use as a switching device for an organic light emitting diode(OLED) were fabricated in the microcontact printing and direct printing processes at room temperature. The gate electrodes($5{\mu}m$, $10{\mu}m$, and $20{\mu}m$) of OTFT was fabricated using microcontact printing process, and source/drain electrodes ($W/L=500{\mu}m/5{\mu}m$, $500{\mu}m/10{\mu}m$, and $500{\mu}m/20{\mu}m$) was fabricated using direct printing process with hard poly(dimethylsiloxane)(h-PDMS) stamp. Printed OTFT with dielectric layer was formed using special coating system and organic semiconductor layer was ink-jet printing process. Microcontact printing and direct printing processes using h-PDMS stamp made it possible to fabricate printed OTFT with channel lengths down to $5{\mu}m$, and reduced the process by 20 steps compared with photolithography. As results of measuring he transfer characteristics and output characteristics of OTFT fabricated with the printing process, the field effect characteristic was verified.