• ETRI Journal
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• 제30권2호
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• pp.308-314
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• 2008

In this paper, we describe the fabrication of 3.5-inch QCIF active matrix organic light emitting display (AMOLED) panels driven by thin film transistors, which are produced by an ultra-low-temperature polycrystalline silicon process on plastic substrates. The over all processing scheme and technical details are discussed from the viewpoint of mechanical stability and display performance. New ideas, such as a new triple-layered metal gate structure to lower leakage current and organic layers for electrical passivation and stress reduction are highlighted. The operation of a 3.5-inch QCIF AMOLED is also demonstrated.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2006년도 하계학술대회 논문집 Vol.7
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• pp.430-431
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• 2006

This letter reports the fabrication of polycrystalline silicon thin-film transistors (poly-Si TFT) on flexible plastic substrates using amorphous silicon (a-Si) precursor films by sputter deposition. The a-Si films were deposited with mixture gas of argon and helium to minimize the argon incorporation into the film. The precursor films were then laser crystallized using XeCl excimer laser irradiation and a four-mask-processed poly-Si TFTs were fabricated with fully self-aligned top gate structure.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
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• pp.352.1-352.1
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• 2014

Indium Tin Oxide (ITO) films are the most extensively studied and commonly used as ones of TCO films. The ITO films having a high electric conductivity and high transparency are easily fabricated on glass substrate at a substrate temperature over $250^{\circ}C$. However, glass substrates are somewhat heavy and brittle, whereas plastic substrates are lightweight, unbreakable, and so on. For these reasons, it has been recently suggested to use plastic substrates for flexible display application instead of glass. Many reaearchers have tried to produce high quality thin films at rood temperatures by using several methods. Therefore, amorphous ITO films excluding thermal process exhibit a decrease in electrical conductivity and optical transparency with time and a very poor chemical stability. However the amorphous Indium Gallium Zinc Oxide (IGZO) offers several advantages. For typical instance, unlike either crystalline or amorphous ITO, same and higher than a-IGZO resistivity is found when no reactive oxygen is added to the sputter chamber, this greatly simplifies the deposition. We reported on the characteristics of a-IGZO thin films were fabricated by RF-magnetron sputtering method on the PEN substrate at room temperature using 3inch sputtering targets different rate of Zn. The homogeneous and stable targets were prepared by calcine and sintering process. Furthermore, two types of IGZO TFT design, a- IGZO source/drain material in TFT and the other a- ITO source/drain material, have been fabricated for comparison with each other. The experimental results reveal that the a- IGZO source/drain electrode in IGZO TFT is shown to be superior TFT performances, compared with a- ITO source/drain electrode in IGZO TFT.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2006년도 추계학술대회 논문집 Vol.19
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• pp.149-150
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• 2006

A ZnO nanowire-based FET is fabricated m this study on a flexible substrate of PES. For the flat and bent flexible substrates, the current ($I_D$) versus drain-source bias voltage ($V_{DS}$) and $I_D$ versus gate voltage ($V_G$) results are compared. The flat band was Ion/Ioff ratio of ${\sim}10^7$, a transconductance of 179 nS and a mobility of ~10.104 cm2/Vs at $V_{DS}$ =1 V. Also bent to a radius curvature of 0.15cm and experienced by an approximately strain of 0.77 % are exhibited an Ion/Ioff ratio of ${\sim}10^7$, a transconductance of ~179 nS and a mobility of ${\sim}10.10 cm^2/Vs$ at $V_{DS}$ = 1V. The electrical characteristics of the FET are not changed very much. although the large strain is given on the device m the bent state.

• 마이크로전자및패키징학회지
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• 제30권3호
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• pp.102-110
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• 2023

본 연구에서는 플렉서블 레이저 투과 용접 (flexible laser transmission welding, f-LTW)을 이용한 박형 기판의 사면 접합 (scarf welding) 공정을 개발하였다. 플렉서블 응용을 위해 경사면의 기울기에 따른 인장 강도의 거동을 조사하였다. 박형 기판으로써 100 ㎛ 이하 두께의 플라스틱 기판이 사용되었으며, 사면 접합을 위해서 기판의 말단에 경사면을 형성하는 지그 장치를 개발하였다. 플렉서블 고분자 기판에 대한 경사면 맞대기 접합을 개발함으로써 공정 후 접합부 두께가 증가하지 않는 유연 접합 기술 개발에 성공하였다. 단축 인장시험을 통해 접합부의 인장 강도를 평가하였으며, 그 결과 경사면의 기울기가 완만할수록 인장 강도가 증가함을 확인하였다. 경사각에 따른 접합 계면에서의 응력 분석을 수행하여 접합 구조 설계 인자를 규명하였다. 본 결과는 동일한 공정 조건에서 접합부의 형상에 따라서 인장 강도가 크게 달라질 수 있음을 시사하므로 접합 공정에서 접합부 형상을 고려하는 것에 대한 중요성을 확인할 수 있다.

• 센서학회지
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• 제27권3호
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• pp.182-185
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• 2018

Zinc oxide (ZnO) thin films have the advantages of growing at a low temperature and obtaining high charge mobility (carrier mobility) [1]. Furthermore, the zinc oxide thin film can be used to control application resistance depending on its oxygen content. ZnO has the desired physical properties, a transparent nature, with a flexible display that makes it ideal for use as a thin-film transistor. Though these transparent flexible thin-film transistors can be manufactured in various manners, manufacturing large-area transistors using a solution process is easier owing to the low cost and flexible substrate. The advantage of being able to process at low temperatures has been attracting attention as a preferred method. However, in the case of a thin-film transistor fabricated through a solution process, it is reported that charge mobility is lower. To improve upon this, a method of improving the crystallinity through heat treatment and increasing electron mobility has been reported. However, as the heat treatment temperature is relatively high at $500^{\circ}C$, an application where a flexible substrate is absent would be more suitable.

• ETRI Journal
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• 제27권4호
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• pp.405-410
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• 2005

High quality indium tin oxide (ITO) thin films were grown by pulse laser deposition (PLD) on flexible polyethersulphone (PES) substrates. The electrical, optical, and surface morphological properties of these films were examined as a function of substrate temperature and oxygen pressure. ITO thin films, deposited by PLD on a PES substrate at room temperature and an oxygen pressure of 15 mTorr, have a low electrical resistivity of $2.9{\times}10^{-4}{\Omega}cm$ and a high optical transmittance of 84 % in the visible range. They were used as the anode in organic light-emitting diodes (OLEDs). The maximum electro luminescence (EL) and current density at 100 $cd/m^2$ were 2500 $cd/m^{2}$ and 2 $mA/m^{2}$, respectively, and the external quantum efficiency of the OLEDs was found to be 2.0 %.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2009년도 제38회 동계학술대회 초록집
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• pp.319-319
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• 2010

Dye-sensitized solar cells (DSSCs) based on plastic substrates have attracted much attention mainly due to extensive applications such as ubiquitous powers, as well as the practical reasons such as light weight, flexibility and roll-to-roll process. However, conventional high temperature fabrication technology for glass based DSSCs, cannot be applied to flexible devices because polymer substrates cannot withstand the heat more than $150^{\circ}C$. Therefore, low temperature fabrication process, without using a polymer binder or thermal sintering, was required to fabricate necked $TiO_2$. In this presentation, we proposed polymer-inorganic composite photoelectrode, which can be fabricated at low temperature. The concept of composite electrode takes an advantage of utilizing elastic properties of polymers, such as good impact strength. As an elastic material, poly(methyl methacrylate) (PMMA) is selected because of its optical transparency and good adhesive properties. In this work, a polymer-inorganic composite electrode was constructed on FTO/glass substrate under low temperature sintering condition, from the mixture of PMMA and $TiO_2$ colloidal solution. The effect of PMMA composition on the photovoltaic property was investigated. Then, the enhanced mechanical stability of this composite electrode on ITO/PEN substrate was also demonstrated from bending test.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2008년도 추계학술대회 논문집 Vol.21
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• pp.283-284
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• 2008

Electrical and optical characteristics of indium tin oxide (ITO) and indium zinc oxide (IZO) films without and with $(SiO_2)_3(ZnO)_7$ at.% (SZO) film deposited on poly(ethylene naphthalate) (PEN) and poly(ethylene terephthalate (PET) substrates as a gas barrier layer for flexible display were studied. The ITO and IZO films with SZO gas barrier layer showed the improved properties which were both the high transmittance of average 80% in the visible light range and the decreased sheet resistance as compared to those of ITO and IZO films without SZO layer. Particularly, the PEN substrate with only SZO gas barrier layer had a low water vapor transmission rate (WVTR) of $\sim10^{-3}g/m^2$/day. Thus, we suggest that the SZO film with protection ability against the water vapor permeation can be applied to gas barrier layer for flexible display.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2011년도 제41회 하계 정기 학술대회 초록집
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• pp.262-263
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• 2011

Flexible electronics, a future technology of electronics, require a low cost integrated circuit that can be built on various types of the flexible substrates. As a potential candidate for this application, a single walled carbon nanotube network is studied as an active device with a scheme of thin film transistor. Transistors are formed on a plastic foil by the Roll-to-Roll (R2R) and the Roll-to-Device (R2D) printing method. For both printing methods, electrical transports for the transistors are presented with the temperature dependence of threshold voltage (V_Th) and mobility from the measured transfer curves at temperatures ranging from 10 K to 300 K. It is observed that ${\mu}=0.044cm^2/V{\cdot}sec$ and V_Th=7.28V for R2R and ${\mu}=0.025cm^2/V{\cdot}sec$ and V_Th=3.10V for R2D, both for the temperature at 300K. Temperature dependence of mobility and V_Th is observed. However for R2R, the temperature dependence of V_Th is constant. It is the difference between, R2R and R2D.