• 센서학회지
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• 제24권3호
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• pp.165-168
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• 2015

We demonstrated low-voltage organic thin-film transistors (OTFTs) with bilayer insulators, high-k polymer and low temperature crosslinkable polymer, on a flexible plastic substrate. Poly (vinylidene fluoridetrifluoroethylene) (P(VDF-TrFE)) and poly (2-vinylnaphthalene) are used for high-k polymer gate insulator and low temperature crosslinkable polymer insulators, respectively. The mobility of flexible OTFTs is $0.17cm^2/Vs$ at gate voltages -5 V after bending operation.

• 한국재료학회지
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• 제28권4호
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• pp.247-253
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• 2018

We examined the characteristics of indium tin zinc oxide (ITZO) thin film transistors (TFTs) on polyimide (PI) substrates for next-generation flexible display application. In this study, the ITZO TFT was fabricated and analyzed with a SiOx/SiNx gate insulator deposited using plasma enhanced chemical vapor deposition (PECVD) below $350^{\circ}C$. X-ray photoelectron spectroscopy (XPS) and secondary ion mass spectroscopy (SIMS) results revealed that the oxygen vacancies and impurities such as H, OH and $H_2O$ increased at ITZO/gate insulator interface. Our study suggests that the hydrogen related impurities existing in the PI and gate insulator were diffused into the channel during the fabrication process. We demonstrate that these impurities and oxygen vacancies in the ITZO channel/gate insulator may cause degradation of the electrical characteristics and bias stability. Therefore, in order to realize high performance oxide TFTs for flexible displays, it is necessary to develop a buffer layer (e.g., $Al_2O_3$) that can sufficiently prevent the diffusion of impurities into the channel.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2016년도 제50회 동계 정기학술대회 초록집
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• pp.198.1-198.1
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• 2016

Organic light-emitting diode (OLED) displays have promising potential to replace liquid crystal displays (LCDs) due to their advantages of low power consumption, fast response time, broad viewing angle and flexibility. Organic light emitting materials are vulnerable to moisture and oxygen, so inorganic thin films are required for barrier substrates and encapsulations.[1-2]. In this work, the silicon-based inorganic thin films are deposited on plastic substrates by plasma-enhanced chemical vapor deposition (PECVD) at low temperature. It is necessary to deposit thin film at low temperature. Because the heat gives damage to flexible plastic substrates. As one of the transparent diffusion barrier materials, silicon oxides have been investigated. $SiO_x$ have less toxic, so it is one of the more widely examined materials as a diffusion barrier in addition to the dielectric materials in solid-state electronics [3-4]. The $SiO_x$ thin films are deposited by a PECVD process in low temperature below $100^{\circ}C$. Water vapor transmission rate (WVTR) was determined by a calcium resistance test, and the rate less than $10.^{-2}g/m^2{\cdot}day$ was achieved. And then, flexibility of the film was also evaluated.

• 한국생산제조학회지
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• 제25권5호
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• pp.368-372
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• 2016

In this study, we develop a novel high-throughput micronanopatterning system that can implement continuous mechanical pattern inscribing on flexible substrates using a rigid grating mold edge. We perform a conceptual design of the process principle, specific modeling, and buildup of a real system prototype. This research also carefully addresses several important issues related to processing and controlling, including precision motion, alignment, heating, and sensing to enable a successful micronanopatterning in a continuous and high-speed fashion. Various micronanopatterns with the desired profiles can be created by tuning the mold shape, temperature, force, and substrate material toward many potential applications involving electronics, photonics, displays, light sources, and sensors, which typically require a large-area and flexible configurations.

• 한국전기전자재료학회논문지
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• 제26권9호
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• pp.682-685
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• 2013

We have fabricated blue phosphorescent organic light-emitting devices (OLEDs) on a plastic substrate. The solution coated poly (9-vinylcarbazole) (PVK) host doped with Bis (3,5-difluoro-2-(2-pyridyl)phenyl_(2-carboxypyridyl)irdium(III) (FIrPic) guest molecules was used as an hole transporting emission layer. The device structure was ITO/PVK:FIrpic (50 nm, xwt%)/TAZ 50 nm)/LiF (0.5 nm)/Al (100 nm). The concentration of FIrpic molecule was varied from 1 wt% to 10 wt%. The OLED on plastic substrate exhibited maximum current efficiency of 18 cd/A with 5 wt% FIrpic molecules were doped into the PVK layer.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2016년도 제50회 동계 정기학술대회 초록집
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• pp.400.2-400.2
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• 2016

Dye-sensitized solar cells (DSSCs) have been widely investigated as a next generation solar cell because of their simple structure and low manufacturing cost. To realize a commercially competitive technology of DSSCs, it is imperative to employ a technique to prepare nanocrystlline thin film on the flexible organic substrate, aiming at increasing the flexibility and reducing the weight as well as the overall device thickness of DSSCs. The key operation of glass-to-plastic substrates conversion is to prepare mesoporous TiO2 thin film at low temperature with a high surface area for dye adsorption and a high degree of crystallinity for fast transport of electrons. However, the electron transport in the TiO2 film synthesized at low temperature is very poor. So, in this study, TiO2 films synthesized at high temperature were transferred on the selective substrate. We fabricated DSSCs at low temperature using this method. So, we confirmed that the performance of DSSCs using TiO2 films synthesized at high temperature was improved.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2008년도 International Meeting on Information Display
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• pp.660-663
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• 2008

In this study, it was mainly focused on the mechanism and reliability performances of PI/PET composites after many times of curving. We developed a new process of spacer for flexible display to improve the maintenance of cell gap. This new process used the laser carving technology, which is widely applied on printing press, to produce the pattern of spacers and shaped both of the alignment film and spacers simultaneously by press of pattern. Assembling the spacer-shaped film and plastic substrates together well and it shows an excellent performance on the maintenance of cell gap and reliability of curving.

• 한국전기전자재료학회논문지
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• 제22권10호
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• pp.821-825
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• 2009

Recently, transparent ZnO-based TFTs have attracted much attention for flexible displays because they can be fabricated on plastic substrates at low temperature. We report the fabrication and characteristics of ZnO TFTs having different channel thicknesses deposited at low temperature. The ZnO films were deposited as active channel layer on $Si_3N_4/Ti/SiO_2/p-Si$ substrates by RF magnetron sputtering at $100^{\circ}C$ without additional annealing. Also, the ZnO thin films deposited at oxygen partial pressures of 40%. ZnO TFTs using a bottom-gate configuration were investigated. The $Si_3N_4$ film was deposited as gate insulator by PE-CVD at $150^{\circ}C$. All Processes were processed below $150^{\circ}C$ which is optimal temperature for flexible display and were used dry etching method. The fabricated devices have different threshold slop, field effect mobility and subthreshold slop according to channel thickness. This characteristics are related with ZnO crystal properties analyzed with XRD and SPM. Electrical characteristics of 60 nm ZnO TFT (W/L = $20\;{\mu}m/20\;{\mu}m$) exhibited a field-effect mobility of $0.26\;cm^2/Vs$, a threshold voltage of 8.3 V, a subthreshold slop of 2.2 V/decade, and a $I_{ON/OFF}$ ratio of $7.5\times10^2$.

• 대한전자공학회:학술대회논문집
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• 대한전자공학회 2006년도 하계종합학술대회
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• pp.543-544
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• 2006

Pentacene thin film transistors fabricated without photolithographic patterning were fabricated on the plastic substrates. Both the organic/inorganic thin films and metallic electrode were patterned by shifting the position of the shadow mask which accompanies the substrate throughout the deposition process. By using an optically transparent zirconium oxide ($ZrO_2$) as a gate insulator and octadecyltrimethoxysilane (OTMS) as an organic molecule for self-assembled monolayer (SAM) to increase the adhesion between the plastic substrate and gate insulator and the mobility with surface treatment, high-performance transistor with field effect mobility $.66\;cm^2$/V s and $I_{on}/I_{off}$>$10^5$ was formed on the plastic substrate. This technique will be applicable to all structure deposited at low temperature and suitable for an easy process for flexible display.

• 전기학회논문지
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• 제59권2호
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• pp.359-362
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• 2010

In this study, inverter logic circuits on a plastic substrate are built with two top-gate FETs in series on a single ZnO nanowire. The voltage transfer characteristics of the ZnO nanowire-based inverter logic circuit exhibit a clear inverting operation. The logic swing, gain and transition width of the inverter logic circuit is about 90 %, 1.03 and 1.2 V, respectively. The result of mechanical bending cycles of the inverter logic circuit on a plastic substrate shows that the stable performance is maintained even after many hundreds of bending cycles.