• Journal of the Korean Magnetics Society
• /
• v.13 no.3
• /
• pp.115-120
• /
• 2003

We have developed laser micro-machining technology for fabrication of the micro thin-film inductors. After the thin layers of FM/M/FM films were coated to the silicon substrate by using the conventional sputtering method, the new laser machining was applied to the patterning process that used to be carried out by the semiconductor lithography procedure. A CW Nd:YAG laser operating in TEM$\sub$00/ mode was actively Q-switched to obtain the very short pulse of 200 ns. The laser micro-machining process with pulse energy and repetition rate have been optimized as 5 mJ/pulse and 5 kHz, respectively, to obtain the line resolution as fine as 20 $\mu\textrm{m}$.

• 한국정보디스플레이학회:학술대회논문집
• /
• 2000.01a
• /
• pp.107-108
• /
• 2000

We propose the method which is possible to fabricate the electrodes with the fine pattern and low resistance by photolithography and electroplating. The widths of pattern fabricated were 30, 50, 70 and 100um and the thickness could be up to $10{\mu}m$. The resistivity of the copper electrode electroplated was below $2.0{\mu}{\Omega}$ cm which is about half of photosensitive silver electrode. Dielectric layer was coated on the electrodes by screen printing and the pores harmful to the discharge were not formed after heat treatment. In the viewpoint of resistance and patterning, this method has much higher potential for large area display than other methods like screen printing, photosensitive conductive paste method and sputtering.

• Journal of Adhesion and Interface
• /
• v.23 no.4
• /
• pp.116-121
• /
• 2022

OFET have require fine patterning technology for organic semiconductor solution process to be used in actual electronics. In this study, we compared and analyzed the soft lithography method which can form fine patterns more than the conventional spin coating method in order to confirm that it can have better electrical characteristics. The soft lithography method produced a flexible master mold using nano patterns on compact disc surfaces and obtained a 650 nm wide 2,7-Dioctyl [1] benzothieno [3,2-b] [1] benzo thiophene (C_8-BTBT) nanowires. As a result, the field-effect mobility of devices fabricated by the spin coating method was 0.0036 cm²/Vs and mobility of devices produced by soft lithography method was 0.086 cm²/Vs, which was about 20 times higher than spin-coated devices and has better electrical performance.

• Journal of the Korean Society of Manufacturing Technology Engineers
• /
• v.24 no.1
• /
• pp.135-139
• /
• 2015

We present a fine patterning method of conductive lines on polyimide (PI) and glass substrates using silver (Ag) nanoparticles based on laser scanning. Controlled laser irradiation can realize selective sintering of conductive ink without damaging the substrate. Thus, this technique easily creates fine patterns on heat-sensitive substrates such as flexible plastics. The selective laser sintering of Ag nanoparticles was managed by optimizing the conditions for the laser scan velocity (1.0-20 mm/s) and power (10-150 mW) in order to achieve a small gap size, high electrical conductivity, and fine roughness. The fabricated electrodes had a minimum channel length of $5{\mu}m$ and conductivity of $4.2{\times}10^5S/cm$ (bulk Ag has a conductivity of $6.3{\times}10^5S/cm$) on the PI substrate. This method was used to successfully fabricate an organic field effect transistor with a poly(3-hexylthiophene) channel.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.33 no.1
• /
• pp.16-20
• /
• 2020

In this study, a patterning method using self-aligned nanostructures was introduced to fabricate GaN-based fin-gate HEMTs with normally-off operation, as opposed to high-cost, low-productivity e-beam lithography. The honeycomb-shaped fin-gate channel width is approximately 40~50 nm, which is manufactured with a fine width using a proposed method to obtain sufficient fringing field effect. As a result, the threshold voltage of the fabricated device is 0.6 V, and the maximum normalized drain current and transconductance of Gm are 136.4 mA/mm and 99.4 mS/mm, respectively. The fabricated devices exhibit a smaller sub-threshold swing and higher Gm peak compared to conventional planar devices, due to the fin structure of the honeycomb channel.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.24 no.5
• /
• pp.374-380
• /
• 2011

In this paper a printing process for patterning electrodes on large area substrate was developed by combining screen printing with reverse off-set printing. Ag ink was uniformly coated by screen printing. And then etching resist (ER) was patterned in the Ag film by reverse off-set printing, and then the non-desired Ag film was etched off by etchant. Finally, the ER was stripped-off to obtain the final Ag patterns. We extracted the suitable conditions of reverse Using the process we successfully fabricated gate electrodes and scan bus lines of OTFT-backplane used for e-paper, in which the diagonal size was 6 inch, the resolution $320{\times}240$, the minimum line width 30 um, and sheet resistance 1 ${\Omega}/{\Box}$.

• 한국정보디스플레이학회:학술대회논문집
• /
• 2003.07a
• /
• pp.163-166
• /
• 2003

Laser-Induced Thermal Imaging (LITI) is a laser addressed patterning process and has unique advantages, such as high-resolution patterning with over-all position accuracy of the imaged stripes within 2.5 micrometer and scalability to large-size mother glass. This accuracy is accomplished using real-time error correction and a high -resolution stage control system that includes laser interferometers. Here the new concept of mixed hybrid system which complement the advantages of small molecular and polymeric materials for use as an OLED; our system can realize the easy processing of polymers and high luminance efficiency of recently developed small molecules. LITI process enables to pattern the stripes with excellent thickness uniformity and multi-stacking of various functional layers without using any type of fine metal shadow mask. In this study, we report a full-color hybrid OLED using the multi-layered structure of small molecular/polymeric species.

• JSTS:Journal of Semiconductor Technology and Science
• /
• v.6 no.3
• /
• pp.162-168
• /
• 2006

To fabricate nanometer scale InGaAs HEMTs, we have successfully developed various novel nano-patterning techniques, including sidewall-gate process and e-beam resist flowing method. The sidewall-gate process was developed to lessen the final line length, by means of the sequential procedure of dielectric re-deposition and etch-back. The e-beam resist flowing was effective to obtain fine line length, simply by applying thermal excitation to the semiconductor so that the achievable final line could be reduced by the dimension of the laterally migrated e-beam resist profile. Applying these methods to the device fabrication, we were able to succeed in making 30nm $In_{0.7}Ga_{0.3}As$ HEMTs with excellent $f_T$ of 426GHz. Based on nanometer scale InGaAs HEMT technology, several high performance millimeter-wave integrated circuits have been successfully fabricated, including 77GHz MMIC chipsets for automotive radar application.

• Journal of Information Display
• /
• v.4 no.3
• /
• pp.1-5
• /
• 2003

Laser-Induced Thermal Imaging (LITI) is a laser addressed patterning process and has unique advantages such as high-resolution patterning with over all position accuracy of the imaged stripes of within 2.5 micrometer and scalability to large-size mother glass. This accuracy is accomplished by real-time error correction and a high-resolution stage control system that includes laser interferometers. Here the new concept of hybrid system that complement the merits of small molecule and polymer to be used as an OLED; our system can realize easy processing of light emitting polymers and high luminance efficiency of small molecules. LITI process enables the stripes to be patlerned with excellent thickness uniformity and multi-stacking of various functional layers without having to use any type of fine metal shadow mask. In this study, we report a full-color hybrid OLED using the multi-layered structure consisting of small molecules and polymers.

• Journal of the Korean Ceramic Society
• /
• v.44 no.3 s.298
• /
• pp.157-161
• /
• 2007

Line width under $100\;{\mu}m$ with good resolution is difficult to achieve using conventional thick-film process utilizing screen printing method. However combined with lithography technology finer line and space for miniaturization and highly integrated package is achievable. In this study, photosensitive Ag paste of optimum formulation used for thick film lithography technology was fabricated by various Ag powder, glass powder and additives. As the result, line width of $30\;{\mu}m$ with good definition and reduced mismatch during co-firing with LTCC substrate was acquired. Formulated Ag paste was used to pattern embedded fine line inductor with over 90% yield.