• Korean Journal of Metals and Materials
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• v.48 no.9
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• pp.856-860
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• 2010

Silver nanoparticles were formed on silica substrates through thin film dewetting at high temperature. The microstructural and morphological evolution of the particles were characterized as a function of processing variables such as initial film thickness, annealing time, and temperature. Silver thin films were deposited onto the silica using a pulsed laser deposition system and annealed in reducing atmosphere to induce agglomeration of the films. The film thicknesses before dewetting were in the range of 5 to 25 nm. A noticeable agglomeration occurs with annealing at temperatures higher than $300^{\circ}C$, and higher annealing temperature increases particle size uniformity for the same film thickness sample. Average particle size linearly correlates to the film thickness, but it does not strongly depend on annealing temperature and time, although threshold temperature for complete dewetting increases with an increase of film thickness. Lower annealing temperature develops faceted surface morphology of the silver particles by enhancing the growth of the low index crystal plane of the particles.

• Transactions on Electrical and Electronic Materials
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• v.11 no.2
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• pp.73-76
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• 2010

The copper indium disulfide ($CuInS_2$) thin film was manufactured using sputtering and thermal evaporation methods, and the annealing with sulfurization process was used in the vacuum chamber to the substrate temperature on the glass substrate, the annealing temperature and the composition ratio, and the characteristics thereof were investigated. The $CuInS_2$ thin film was manufactured by the sulfurization of a soda lime glass (SLG) Cu/In/S stacked [1] elemental layer deposited on a glass substrate by vacuum chamber annealing [2] with sulfurization for various times at a temperature of substrate temperature of $200^{\circ}C$. The structure and electrical properties of the film was measured in order to determine the optimum conditions for the growth of $CuInS_2$ ternary compound semiconductor $CuInS_2$ thin films with a non-stoichiometric composition. The physical properties of the thin film were investigated under various fabrication conditions [3,4], including the substrate temperature, annealing temperature and annealing time by X-ray diffraction (XRD), field Emission scanning electron microscope (FE-SEM), and Hall measurement systems. [5] The sputtering rate depending upon the DC/RF power was controlled so that the composition ratio of Cu versus In might be around 1:1, and the substrate temperature affecting the quality of the film was varied in the range of room temperature (RT) to $300^{\circ}C$ at intervals of $100^{\circ}C$, and the annealing temperature of the thin film was varied RT to $550^{\circ}C$ in intervals of $100^{\circ}C$.

• Journal of Magnetics
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• v.14 no.1
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• pp.7-10
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• 2009

In this work, we studied the effects of Sn addition on the ordering temperature of FePt thin film. The coercivity of FePtSn film was about 1000 Oe greater than the coercivity of FePt film for an annealing temperature of $600^{\circ}C$. Therefore, Sn addition was effective in promoting the $L1_0$ ordering and in reducing the ordering temperature of the FePt film. From our X-ray diffraction results, we found that in the as-deposited film, the addition of Sn induced a lattice expansion in disordered FePt thin films. After the annealing process, the excess Sn diffuses out from the ordered FePt thin film because of the difference in the solid solubility of Sn between the disordered and ordered phases. The existence of precipitates of Sn from the FePt lattice was deduced by Curie temperature measurements of the FePt and FePtSn films. Therefore, the key role played by the addition of Sn to the FePt film can be explained by a reduction in the activation energy for the $L1_0$ order-disorder transformation of FePt which originates from the high internal stress in the disordered phase induced by the supersaturated Sn atoms.

• Tribology and Lubricants
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• v.14 no.1
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• pp.7-13
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• 1998

The static characteristics of a five-pad tilting pad journal bearing of load on pad (LOP) type have been investigated experimentally under the different values of bearing load and shaft speed. The diameter and length of the bearing are 300.91 mrn and 149.8 mm, reslx;ctively. Circumferential distribution of the film pressure, film thickness, journal surface temperature and beating surface temperature are measured. A noticeable inlet pressure rise is observed at the entrance of each pad, especially the bottom pad. The inlet pressure is increased by the increase of shaft speed as well as bearing load. In the five-pad tilting pad joumal bearing of LOP type, almost all of beating load is being carried only by the bottom pad. The maximum bearing surface temperature is observed at near the minimum film thickness. It is observed that the metal temperature of the mid-plane is higher than that of the edge at the inlet region, while the metal temperature of the edge is higher than that of the mid-plane at the outlet region.

• Journal of the Korean Society for Heat Treatment
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• v.2 no.4
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• pp.1-10
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• 1989

To investigate the influence of temperature on the TiN film, it was deposited on the STC-3 steel and Si-wafer from $TiCl_4/N_2/H_2$ gas mixture by using the radio frequency plasma assisted chemical vapor deposition. The deposition was performed at temperature of $400^{\circ}C-500^{\circ}C$. The results showed that crystalline TiN film was deposited over $480^{\circ}C$, and all specimens showed the crystalline TiN X-ray diffraction peaks after vacuum heat treatment for 3 hrs, at $1000^{\circ}C$, $10^{-5}torr$. While the film thickness was increased above $480^{\circ}C$, it was decreased under $480^{\circ}C$ as temperature increased. And the contents of titanium were increased and it of chlorine were decreased as temperature increased. Because temperature increase was attributed to the increase in the density of TiN film, surface hardness of TiN film was increased with temperature.

• Journal of Mechanical Science and Technology
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• v.19 no.6
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• pp.1338-1346
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• 2005

Effects of thermal contact resistance between heater and susceptor, susceptor and graphite board in a MOCVD reactor on temperature distribution and film growth rate were analyzed. One-dimensional thermal resistance model considering thermal contact resistance and heat transfer area was made up at first to find the temperature drop at the surface of graphite board. This one-dimensional model predicted the temperature drop of 18K at the board surface. Temperature distribution of a reactor wall from the three-dimensional computational fluid dynamics analysis including the gap at the wafer position showed the temperature drop of 20K. Film growth rates of InP and GaAs were predicted using computational fluid dynamics technique with chemical reaction model. Temperature distribution from the three-dimensional heat transfer calculation was used as a thermal boundary condition to the film growth rate simulations. Temperature drop due to the thermal contact resistance affected to the GaAs film growth a little but not to the InP film growth.

• Korean Journal of Agricultural and Forest Meteorology
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• v.13 no.1
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• pp.1-9
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• 2011

This study was conducted to investigate the influence of different polyethylene film (P.E. film) for mulching on the changes in soil temperature and the production of good feathered apple nursery trees. M.9 rootstocks with stem diameter of 9.1~11.0 mm were planted in plots covered with different P.E. film (i.e., transparent P.E. film, black P.E. film, and bare soil as control). Three weeks after planting, the rootstocks were veneer grafted with 'Sinano Sweet' apple cultivar. In the middle of June, BA was sprayed to nursery for inducing feathering during the growing season. The soil temperature of the control was higher than air temperature by about $0.7^{\circ}C$ from mid April to early October, and that of P.E. film mulching was about $1{\sim}5^{\circ}C$ higher than that of the control. The soil temperature under transparent P.E. film was about $2{\sim}3^{\circ}C$ higher than that under black P.E. film. The diurnal range of soil temperature under the black P. E. film was lowest among all treatments. The P.E. film mulching induced better tree growth and feathering than bare soil. Percentage of good feathering apple nursery of black P.E. film was highest among all treatments because the soil temperature unuder black P.E. film in the early growing season was higher than that of the control and the number of days when the maximum soil temperature was over $35^{\circ}C$ in the summer was lower than that under the transparent P.E. film.

• Journal of the Korean institute of surface engineering
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• v.36 no.2
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• pp.141-147
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• 2003

Silicon carbide thin film was deposited in APCVD and LPCVD system with 1,3-DSB precursor 1,3-DSB is the single precursor to deposit SiC on Si at low temperature. SiC film was deposited at $850^{\circ}C$ lower than ordinary temperature ($1000~1200^{\circ}C$) in CVD process. SiC thin film glowed to high oriented (111) plane in APCVD system. In LPCVD system, SiC film groved to preferred (220) plane at same temperature. This discrepancy between preferred planes can be described by the difference of deposition mechanism. Amorphous phase and crystal defect were observed in APCVD system with the main growth mechanism of mass transport limited region. But in LPCVD system, we got the SIC film of uniform, faceted structure and high quality.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.06a
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• pp.278-278
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• 2007

Ag conductive thick film has been used in bus and address electrodes of PDP (Plasma display panel). In PDP fabrication, the firing temperature of electrode is normally $550{\sim}580^{\circ}C$. For the application of PDP industry, we investigated an Ag conductive thick film with firing temperature. Low melting glass frit was used in the conductive thick film. The thermal properties of Ag and frit were determined by a hot stage microscopy. Based on the our results, we suggest that the Ag conductive thick film should be considered of the firing temperature which is correlated to the shrinkage, conductivity, and shape of thick film.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.07a
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• pp.709-712
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• 2001

The effects of post annealing temperature by the Rapid Thermal Annealing(RTA) on the electrical properties of Pb(Zr,Ti)O$_3$(PZT) thin film were investigated. Analyses by the RTA treatments reveled that the leakage current of PZT thin films strongly depend on heating temperature and time. It was found that leakage current properties of PZT capacitor were changed by heating temperature during the RTA annealing. On Pt/Ti/Si substrates, PZT films are deposited at 350 $^{\circ}C$ by rf magnetron sputtering. The X-ray diffusion (XRD) was confirmed the formation of PZT thin film. Leakage current characteristics were improved with decreasing the post annealing temperature of PZT thin film. RTA annealed film on the 700$^{\circ}C$ shows ferroelectric and electrical properties with a remanent polarization of 12.4${\mu}$C/$\textrm{cm}^2$ coercive field of 117kV/cm, leakage current J= 6.2${\times}$10$\^$-6/ A/$\textrm{cm}^2$