• Journal of the Korean institute of surface engineering
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• v.51 no.6
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• pp.393-399
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• 2018

Formation behavior of aluminum anodic oxide (AAO) films on Al6061 alloy was studied in view of thickness, morphology and defects in the anodic films in 20 vol.% sulfuric acid solution at a constant current density of $40mA/cm^2$, using voltage-time curve, observation of anodized specimen colors and surface and cross-sectional morphologies of anodic films with anodization time. With increasing anodizing time, voltage for film formation increased exponentially after about 12 min and its increasing rate decreased after 25 min, followed by a rapid decrease of the voltage after about 28 min. Surface color of anodized specimen became darker with increasing anodizing time up to about 20 min, while it appeared to be brighter with increasing anodizing time after 20 min. The darkened and brightened surfaces with anodizing time are attributed to an increase in thickness of porous anodic oxide film and a chemical damage of the films due to heat generated by increased resistance of the film, respectively. Cross-sectional observation of AAO films revealed the formation of defects of crack shape at the metal/oxide interface after 15 min which prevents the growth of AAO films. Width and length of the crack-like defect increased with anodizing time up to 25 min of anodizing, and finally the outer part of AAO films was partly dissolved or detached after 30 min of anodizing, resulting in non-uniform surface structures of the AAO films.

• Journal of the Korean institute of surface engineering
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• v.52 no.3
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• pp.138-144
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• 2019

In this work, PEO (Plasma Electrolytic Oxidation) film formation behavior of Al6061 alloy was investigated as a function of applied current density of AC at 310 Hz in the range from $120mA/cm^2$ to $300mA/cm^2$ in 0.5 M $Na_2SiO_3$ solution. When applied current density is lower than a critical voltage of about $132mA/cm^2$, voltage reaches a steady-state values less than 120 V without generation of arcs and metallic color of the alloy surface remains. On the other hand, when applied current density exceeds about $132mA/cm^2$, voltage increases continuously with time and arcs are generated at more than 175 V, resulting in the formation of PEO films with grey colors. Two different types of arcs, large size and small number of arcs with orange color, and small size and large number of arcs with white color, were generated at the same time when the PEO film thickness exceeds about $50{\mu}m$, irrespective of applied current density. Formation efficiency of the PEO films was found to increase with increasing applied current density and the growth rate was obtained to be about $5{\mu}m/min$ at $300mA/cm^2$. It was also found that surface roughness of the PEO films with $70{\mu}m$ thickness is not dependent on the applied current density.

• Journal of ILASS-Korea
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• v.2 no.4
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• pp.15-21
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• 1997

In a gasoline engine with port injection system, the fuel behavior in the intake port has significant influence on the HC emission and the precise A/F control. That is to say, it is inevitable that the injection direction and behavior of fuel injected in the intake port have an effect on the generation of unburned HC within a cylinder. In this paper, we visualized fuel behavior in the intake port using micro CCD camera synchronized with the stroboscope and investigated the fuel-film characteristics formed at the wall of intake port by processing image captured with VCR in the transparent intake port made of acryl. Using these measuring methods, it was found that fuel behavior and the formation of fuel-film in the intake port could be evaluated qualitatively. And results obtained by these methods show that 2-spray injector minimizes the fuel-film formed in the intake port of a DOHC gasoline engine.

• 한국전기화학회:학술대회논문집
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• 2002.11a
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• pp.57-65
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• 2002

The presence of tetragonal phase at the surface of $LiMn_2O_4$ pinicle due to a Jahn-Teller offset was previously reported to be one of the causes for capacity fading observed during cycling of $Li//Li_xMn_2O_4$ in 4V range. Further, it is reported that a Jahn-Teller effect in 4V range may be suppressed by substitution of Mn ions with Li ions or other transition metal ions. However, the direct evidence of the suppression of a Jahn-Teller effect in 4V range by substitution of Mn ions with other metal ions has not been reported. The dissolution and formation of surface film at the surface of $LiMn_2O_4$ electrodes also reportedly affect the capacity fading or rate capability. This study reports on the evidence of the onset and suppression of a Jahn-Teller effect in 4V range and the dissolution and formation of surface film at the surface of $LiMn_2O_4$ thin film electrodes using in situ bending beam method (BBM) in situ electrochemical quartz crystal microbalance (EQCM).

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2011.05a
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• pp.115-115
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• 2011

고성능 금속 커패시터 개발을 목적으로 aluminum film에 균일한 etch fit를 형성하는 연구를 진행하였다. Etch mask로 PI를 사용하여 Aluminum film에 균일한 형태의 etch fit를 형성하였다. 균일하게 에칭 된 aluminum film들은 capacitance를 측정하여 에칭 조건에 따른 capacitance 변화를 확인하였다.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.55 no.10
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• pp.461-466
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• 2006

In the present work, we investigated the photodissolution and photodiffusion effect on the interface of Ag/chalcogenide $As_{40}Ge_{10}Se_{15}S_{35}$ thin film by measuring the absorption coefficient, the optical density, the resistance change of Ag layer. It was found that the photodissolutioniphotodiffution ratio depends on the magnitude of photon energy absorbed in the chalcogenide thin film and the depth of photodiffution was proportional to the square root of the exposed time. Also, we have investigated the holographic grating formation with P-polarization states on chalcogenide $As_{40}Ge_{10}Se_{15}S_{35}$ thin film and $As_{40}Ge_{10}Se_{15}S_{35}/Ag$ double layer structure thin film. Holographic gratings have been formed using He-Ne laser (632.8 nm) which have a smaller energy than the optical energy gap, $E_g\;_{opt}$ of the film, i. e., an exposure of sub-bandgap light $(h{\upsilon} under P-polarization. As the results, we found that the diffraction efficiency on $As_{40}Ge_{10}Se_{15}S_{35}/Ag$ double layer structure thin film was more higher than that on single $As_{40}Ge_{10}Se_{15}S_{35}$ thin film. Also, we obtained that the maximum diffraction efficiency was 0.27 %, 1,000 sec on $As_{40}Ge_{10}Se_{15}S_{35}\;(1{\mu}m)/Ag$ (10 nm) double layer structure thin film by (P: P) polarized recording beam. It will offer lots of information for the photodoping mechanism and the analyses of chalcogenide thin films.

• Journal of the Korean Chemical Society
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• v.28 no.5
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• pp.271-278
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• 1984

Ellipsometric and reflectance measurements were made with magneto-optically self-nulling ellipsometer on the iron surface being passivated. The passivation was induced by abruptly changing potential of the mechanically polished high purity iron from the reduction potential to the oxidation potential in basic solutions. From the differences in the optical paramates(${\Delta},\;{\psi}$) and reflectance (R) between the reduced (film-free) and oxidized (film-covered) states, the thickness(${\tau}$) and optical constants (n, k) of the film in the early stage of its formation were computed as functions of pH and time. From the computed values, it was deduced that the properties of the anodic film did not undergo a drastic change with time which would indicate a transformation of the film before effective passivity is attained, and that the film reached its stady state within a few second. The thickness of anodic film was $14\;{\sim}\;23{\AA}$. The anodic films also seemed to have small values of optical absorption coefficient. The film formed in high pH environments had thinner and denser structure than that formed in low pH.

• Proceedings of the Korean Society Of Semiconductor Equipment Technology
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• 2007.06a
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• pp.193-198
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• 2007

The NiSi is very promising candidate for the metallization in 60nm CMOS process such as FUSI(fully silicided) gate and source/drain contact because it exhibits non-size dependent resistance, low silicon consumption and mid-gap workfunction. Ni film was first deposited by using ALD (atomic layer deposition) technique with Bis-Ni precursor and $H_2$ reactant gas at $220^{\circ}C$ with deposition rate of $1.25{\AA}/cycle$. The as-deposited Ni film exhibited a sheet resistance of $5{\Omega}/{\square}$. RTP (repaid thermal process) was then performed by varying temperature from $400^{\circ}C$ to $900^{\circ}C$ in $N_2$ ambient for the formation of NiSi. The process window temperature for the formation of low-resistance NiSi was estimated from $600^{\circ}C$ to $800^{\circ}C$ and from $700^{\circ}C$ to $800^{\circ}C$ with and without Ti capping layer. The respective sheet resistance of the films was changed to $2.5{\Omega}/{\square}$ and $3{\Omega}/{\square}$ after silicidation. This is because Ti capping layer increases reaction between Ni and Si and suppresses the oxidation and impurity incorporation into Ni film during silicidation process. The NiSi films were treated by additional thermal stress in a resistively heated furnace for test of thermal stability, showing that the film heat-treated at $800^{\circ}C$ was more stable than that at $700^{\circ}C$ due to better crystallinity.

• Current Photovoltaic Research
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• v.2 no.1
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• pp.36-39
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• 2014

Formation mechanism of residual carbon layer, frequently observed in the $CuInSe_2$ (CIS) thin film prepared by direct solution coating routes, was investigated in order to find a way to eliminate it. As a model system, a methanol solution with dissolved Cu and In salts, whose viscosity was adjusted by adding ethylcellulose (EC), was chosen. It was found that a double layer, a top metal ion-derived film and bottom EC-derived layer, formed during an air drying step presumably due to different solubility between metal salts and EC in methanol. Consequently, the top metal ion-derived film acts as a barrier layer inhibiting further thermal decomposition of underlying EC, resulting a formation of bottom carbon residue layer.

• Macromolecular Research
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• v.17 no.5
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• pp.301-306
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• 2009

This work has demonstrated that a novel amphiphilic poly(epichlorohydrine)-graft-polystyrene (PECH-g-PS) copolymer at 34:66 wt% was synthesized via atom transfer radical polymerization (ATRP) of styrene using PECH as a macroinitiator. The structure of the graft copolymer was characterized by nuclear magnetic resonance ($^1H$ NMR) and FTIR spectroscopy, demonstrating that the "grafting from" method using ATRP was successful. The self-assembled graft copolymer was used as a template film for the in-situ growth of silver nanoparticles from $AgCF_3SO_3$ precursor under UV irradiation. The in situ formation of silver nanoparticles with 6-8 nm in average size in the solid state template film was confirmed by transmission electron microscopy (TEM), UV-visible spectroscopy and wide angle X-ray scattering (WAXS). Differential scanning calorimetry (DSC) also displayed the selective incorporation and the in situ formation of silver nanoparticles within the hydrophilic PECH domains, probably due to stronger interaction of the silvers with the ether oxygens of PECH backbone than that with hydrophobic PS side chains.