• Journal of the Korea Academia-Industrial cooperation Society
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• v.16 no.10
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• pp.6655-6665
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• 2015

Due to tightened environmental regulations on halogen type flame retardants, the portions of those based on phosphorous compounds that are non-halogen type is rising. When producing functional film, the physical and thermal properties become distinctly different depending on the amount of Red-phosphorus(RP) addition which causes flame resistance. The physical properties of resin fall in big scale when too much flame retardants are added, and it is hard to be applied to functional films such as shrink or anticorrosive film. The purpose of this research is to study the effects on mechanical, physical, and other properties of RP-LDPE films by changing the RP-MB contents. The LDPE film used for this study was produced through blow-type injection molding. The flame resistance was VTM-0, and the tear resistance showed inverse trends of MD and TD. Contraction percentage showed no relationship with the amount of RP content, but the anti-corrosive property showed 0.05 % better result than the national anti-corrosion shrink film reliability standard.

• Applied Microscopy
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• v.42 no.4
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• pp.207-211
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• 2012

We examined the electrical properties and microstructure of NiO produced using a sol-gel method and Ni nitrate hexahydrate ($Ni[NO_3]_2{\cdot}6H_2O$) to investigate if this NiO thin film can be used as an insulator layer for resistance random access memory (ReRAM) devices. It was found that as-prepared NiO film was polycrystalline and presented as the nonstoichiometric compound $Ni_{1+x}O$ with Ni interstitials (oxygen vacancies). Resistances-witching behavior was observed in the range of 0~2 V, and the low-resistance state and high-resistance state were clearly distinguishable (${\sim}10^3$ orders). It was also demonstrated that NiO could be patterned directly by KrF eximer laser irradiation using a shadow mask. NiO thin film fabricated by the sol-gel method does not require any photoresist or vacuum processes, and therefore has potential for application as an insulating layer in low-cost ReRAM devices.

• The Journal of the Institute of Internet, Broadcasting and Communication
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• v.9 no.3
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• pp.173-178
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• 2009

We have investigated the electrical properties of oxide metal thin film device. The device has been fabricated top-top electrode structure and its transport properties are measured in order to study the resistance change. Electrical properties with linear voltage sweep on a electrodes are used to show the variation of resistance of oxide metal thin film device. Fabricated oxide metal thin film device with MIM structure is changed from a low conductive Off-state to a high conductive On-state by the external linear voltage sweep. The $Si/SiO_2/MgO$ device is switched from a high resistance state to a low resistance state by forming. Consequently, we believe oxide metal is a promising material for a next-generation nonvolatile memory and other electrical applications.

• Journal of the Korean Society of Manufacturing Process Engineers
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• v.20 no.11
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• pp.1-8
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• 2021

In this study, the water resistance and mechanical properties of heat-treated polyvinyl alcohol (PVA)/cellulose nanocrystal (CNC) films were investigated. PVA is the most commonly used synthetic biodegradable polymers owing to its excellent properties. However, the water/moisture sensitivity and relatively poor mechanical properties of PVA limits its applications. Although heat treatment is a conventionally used method to improve the mechanical strength and water resistance of PVA, the effectiveness of this method is insufficient. Therefore, CNC was used to further improve the mechanical properties and water resistance of the heat-treated PVA film. PVA/CNC nanocomposites containing CNC contents of 0, 1, 3, 5, and 10 wt% were fabricated using solvent casting and subsequent heat treatment. The mechanical properties and water resistance of PVA/CNC films were significantly improved. The tensile strength and wet strength of the PVA/CNC film with a CNC content of 5 wt% (PVA/CNC 5%) were 184.5% and 136.0% higher than those of the untreated PVA, respectively. In addition, the water absorption and solubility of PVA/CNC 5% were 56.6% and 68.2% lower than those of the untreated PVA.

• Proceedings of the KIEE Conference
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• 2007.11a
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• pp.128-129
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• 2007

Electrochemical method of carbon film on silicon substrate in methanol solution was carried out with various current density, solution temperature and electrode spacing between anode and cathode. The carbon films with smooth surface morphology and high electrical resistance were formed when the distance between electrode was relatively wider. The electrical resistance of the carbon films were independent of both current density and solution temperature.

• Journal of the Korean institute of surface engineering
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• v.46 no.3
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• pp.116-119
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• 2013

To improve the corrosion resistance of an electrogalvanized steel sheet, we deposited magnesium film on it using a vacuum evaporation method and annealed the films at $250-330^{\circ}C$. The zinc-magnesium alloy is consequently formed by diffusion of magnesium into the zinc coating. From the anodic polarization test in 3% NaCl solution, the films annealed at $270-310^{\circ}C$ showed better corrosion resistance than others. In X-ray diffraction analysis, $ZnMg_2$ was detected through out the temperature range, whereas $Mg_2Zn_{11}$ and $FeZn_{13}$ were detected only in the film annealed at $310^{\circ}C$. The depth composition profile showed that the compositions of Mg at $270-290^{\circ}C$ are evenly and deeply distributed in the film surface layer. These results demonstrate that $270-290^{\circ}C$ is a proper temperature range to produce a layer of $MgZn_2$ intermetallic compound to act as a homogeneous passive layer.

• 한국정보디스플레이학회:학술대회논문집
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• 2004.08a
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• pp.95-97
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• 2004

We studied a low temperature ion doping process for poly-Si Thin Film Transistor (TFT) on plastic substrates. The ion doping process was performed using an ion shower system, and subsequently, excimer laser annealing (ELA) was done for the activation. We have studied the crystallinity of Si surface at each step using UV-reflectance spectroscopy and the sheet resistance using 4-point probe. We found that the temperature has increased during ion shower doping for a-Si film and the activation has not been fulfilled stably because of the thermal damage against the plastic substrate. By trying newly a pulsed ion shower doping, the ion was efficiently incorporated into the a-Si film on plastic substrate. The sheet resistance decreased with the increase of the pulsed doping time, which was corresponded to the incorporated dose. Also we confirmed a relationship between the crystallinity and the sheet resistance. A sheet resistance of 300 ${\Omega}$/sq for the Si film of 50nm thickness was obtained with a good reproducibility. The ion shower technique is a promising doping technique for ultra low temperature poly-Si TFTs on plastic substrates as well as those on glass substrates.

• Korean Journal of Materials Research
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• v.19 no.9
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• pp.488-493
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• 2009

Thin films of single-wall carbon nanotubes (SWNT) with various thicknesses were fabricated, and their optical and electrical properties were investigated. The SWNTs of various thicknesses were directly coated in the arc-discharge chamber during the synthesis and then thermally and chemically purified. The crystalline quality of the SWNTs was improved by the purification processes as determined by Raman spectroscopy measurements. The resistance of the film is the lowest for the chemically purified SWNTs. The resistance vs. thickness measurements reveal the percolation thickness of the SWNT film to be $\sim$50 nm. Optical absorption coefficient due to Beer-Lambert is estimated to be $7.1{\times}10^{-2}nm^{-1}$. The film thickness for 80% transparency is about 32 nm, and the sheet resistance is 242$\Omega$/sq. The authors also confirmed the relation between electrical conductance and optical conductance with very good reliability by measuring the resistance and transparency measurements.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.52 no.4
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• pp.173-178
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• 2003

In this paper, we studied the physical and electrical characteristics of $\textrm{WSi}_{x}$ thin film with respect to the adoption of the DCS (dichlorosiliane) post flow and the variation of deposition temperature. XRD measurements show that as deposited thin film has a hexagonal structure regardless of deposition Process. However, we find that the phase of thin film has changed to a tetragonal structure after the heat treatment at $680^{\circ}C$. Adoption of DCS post flow and increment of deposition temperature result in the increments of Si/W composition ratio. These conditions also result in the increment of sheet resistance by the amount 3.0~4.2$\Omega$/$\square$, but give the tendency in the decrement of stress by 0.27~0.3 E10dyne/$\textrm{cm}^2$. We also find that the contact resistance of word line and bit line interconnection was decreased by the amount 5.33~16.43$\mu$$\Omega$-$\textrm{cm}^2$, when applying DCS post flow and increasing deposition temperature.

• Journal of the Korean Chemical Society
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• v.40 no.1
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• pp.37-43
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• 1996

The electrochemical impedance spectra of polyaniline film coated on tungsten electrodes by cyclic voltammetry have been measured in 0.1 M aqueous sulfuric acid solution. An electrochemical cell composed of large redox capacitance and low resistance of PANI-film in series was in agreement with the conductive behavior reported at these potentials. When the PANI was coated on bare tungsten, the electrolytic resistance was only observed. However, on the oxidized tungsten instead of bare tungsten, the resistance of tungsten oxide and the contact resistance between PANI and tungsten oxide were additionally observed. Equivalent electrical circuits have been deduced from the impedance data. It was therfore possible to obtain the parameters of the ionic mass transport within the film.