• Transactions of the Korean hydrogen and new energy society
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• v.18 no.3
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• pp.334-341
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• 2007

Al film(135.5 nm thick) with Pd film(39.6 nm thick) was made by thermal evaporation method. Electrical resistance change by hydrogen absorption and desorption was measured with four point measurement method. Even though Al film(135.5 nm thick) did not absorb any hydrogen at room temperature, Al/Pd film absorbed hydrogen at upto 640 torr pressure. Hydrogen absorption kinetics was monitored by measuring resistance change of the sample in the temperature range from $25^{\circ}C$ to $40^{\circ}C$. Absorption activation energy of Al/Pd film was about 10.7 and 17.7 kcal/mol H for 1st stage and last stage respectively at 1 torr hydrogen pressure. This activation values are bigger than that of Pd film, but are much less than that of Al film. This result indicates there is possibility that Al can be storage material for hydrogen by using Pd film evaporation on it.

• Corrosion Science and Technology
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• v.8 no.1
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• pp.11-14
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• 2009

The osmotic blistering behavior of polymeric coating film which is in contact with an aqueous environment has been investigated. In this study, the coating film has been assumed to be linearly viscoelastic. Interfacial stresses induced in a laminate model consisting of the viscoelastic film and the elastic substrate as the film absorbs moisture from the ambient environment have been investigated using the time-domain boundary element method. The overall stress intensity factor for interfacial cracks subjected to a uniform osmotic pressure has been computed using the tractions at the crack tip node. The magnitude of stress intensity factors decreases with time due to viscoelastic relaxation, but remains constant at large times.

• Transactions of the Korean hydrogen and new energy society
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• v.16 no.4
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• pp.386-390
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• 2005

Al film(135.5 nm thick) with Pd film(39.6 nm thick) on the top of it was made by thermal evaporation method. Electrical resistance change due to hydrogen absorption and desorption was measured by four point measurement method. The sample was activated by hydrogen absorption and desorption cycling at room temp. Hydrogen was introduced into the film by increasing hydrogen gas pressure step by step up to 640 torr at room temp. The resistance change ratio was decreased to 12 % with increasing hydrogen pressure in contrast to normal metal behavior. This strange tendency was not understood yet. Further study is needed to find out the mechanism of hydrogen absorption in Al in Al/Pd film.

• Journal of the Korean Ceramic Society
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• v.35 no.8
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• pp.795-800
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• 1998

• Journal of the Semiconductor & Display Technology
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• v.5 no.1 s.14
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• pp.13-16
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• 2006

AIN thin films were prepared on amorphous glass and $SiO_2(1{\mu}m)/Si(100)$ substrate by the facing targets sputtering (FTS) apparatus, which can provide high density plasma, a high deposition rate at a low working gas pressure. The AIN thin films were deposited at a different nitrogen gas flow rate ($1.0{\sim}0.3$) and other sputtering parameters were fixed such as sputtering power of 200w, working pressures of 1mTorr and AIN thin film thickness of 800 nm, respectively. The thickness and crystallographic characteristics of AIN thin films as a function of $N_2$ gas flow rate $[N_2/(N_2+Ar)]$ were measured by $\alpha$-step and an X-ray diffraction (XRD) instrument. And the c-axis preferred orientations were evaluated by rocking curve. In the results, we could prepared the AIN thin film with c-axis preferred orientation of about $5^{\circ}$ on substrate temperature R.T. at nitrogen gas flow rate 0.7.

• Journal of Engineering Education Research
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• v.18 no.6
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• pp.88-97
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• 2015

This is paper aims to figure out the way movies and engineering have communicated and the right direction for better communication between them. Engineering no longer should be treated as playing a key role when it comes to film making. Engineering is essential in making films look real. It means that movies gain credibility from utilizing engineering, which all other types of arts also seek after. Films can be resonated better through mutual communication with engineering. The paper takes a close look at emotional aspects to figure out what the new direction of communication between movies and engineering is. People's lives shown in films and the material world that engineering represents are mingled to attain the emotional oneness between the two. This can be easily observed in Japanese movies where robots and humans have a close relationship or recent films whose theme is emotional exchange among humans and robots. This kind of contact leads us to explore newly found humans' position that was brought about in the wake of development in engineering and existential conditions that humans need to have accordingly. Artificial intelligence and neurology sectors that the engineering field is today earnestly working on are in line with it. Therefore, this article seeks to find out the meaning and value of communication between movies and engineering when establishing the fresh mankind model based on emotions and pursuit of diversity.

• Current Applied Physics
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• v.18 no.11
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• pp.1300-1305
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• 2018

The tunable electronic performance of the solution-processed semiconductor metal oxide is of great significance for the printing electronics. In current work, transparent thin-film transistors (TFTs) with indium-zinc oxide (IZO) were fabricated as active layer by a simple eco-friendly aqueous route. The aqueous precursor solution is composed of water without any other organic additives and the IZO films are amorphous revealed by the X-ray diffraction (XRD). With systematic studies of atomic force microscopy (AFM), X-ray photoemission spectroscopy (XPS) and the semiconductor property characterizations, it was revealed that the electrical performance of the IZO TFTs is dependent on the concentration of precursor solution. As well, the optimum preparation process was obtained. The concentrations induced the regulation of the electronic performance was clearly demonstrated with a proposed mechanism. The results are expected to be beneficial for development of solution-processed metal oxide TFTs.

• Transactions of the Korean hydrogen and new energy society
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• v.12 no.4
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• pp.287-292
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• 2001

The optical transmittance change of Pd thin film due to hydrogen absorption and desorption was examined at room temperature. Hydrogen absorption and desorption cycling effects on optical transmittance were measured 6 times in the pressure range between 0 and 640 torr. Optical transmittance of Pd film was increasing with increasing hydrogen pressure. Ratio of optical transmittance to the change of pressure at $\beta$ phase is bigger than that of low hydrogen pressure range.

• Transactions of the Korean hydrogen and new energy society
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• v.12 no.3
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• pp.201-209
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• 2001

The change of optical transmittance of $PdH_x$ thin film due to hydrogen concentration change was measured at room temperature. Pd film($312{\AA}$ thick) was made by thermal evaporation on glass substrate. Hydrogen absorption and desorption cycling effect on optical transmittance was measured 4 times in the pressure range between 0 and 640 torr. Ratio of optical transmittance to the change of ln pressure(torr) increases with increasing number of hydrogen A-D cyclings in the ${\beta}$ phase.

• Proceedings of the Korean Society Of Semiconductor Equipment Technology
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• 2002.11a
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• pp.27-33
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• 2002

The residual thermal stresses at the interface corner between the elastic substrate and the viscoelastic thin film due to cooling from cure temperature down to room temperature have been studied. The polymeric thin film was assumed to be thermorheologically simple. The boundary element method was employed to investigate the nature of stresses on the whole interface. Numerical results show that very large stress gradients are present at the interface comer and such stress singularity might lead to edge cracks or delamination.