• 한국표면공학회지
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• 제34권5호
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• pp.455-464
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• 2001

Effect of bombardment of the growing film by energetic particles on its properties is know over many years and is widely used for modification of the film properties. Despite of this there are no final answers on such questions as: what is the mechanism of compositional changes that take place for some compound films deposited under the ion bombardment, how the ion bombardment influences the epitaxial growth, what mechanisms govern the growth of the film on its early stages during deposition under the ion bombardment. The role of composition of film-forming species in formation of film structure is barely investigated or even not investigated at all. Experimental evidence and discussion of the influence of ion bombardment and composition of film-forming species on structure and composition of compound films are briefly considered in the review.

• 한국정보통신학회논문지
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• 제16권10호
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• pp.2247-2252
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• 2012

본 논문은 동시진공증발법(co-evaporation method)으로 CIGS 박막(thin film)을 제작을 하였다. 제작과정 중 기판온도(substrate temperature)변화와 Ga/(In+Ga) 조성비(composition ratio) 변화에 따른 저항율(resistivity) 및 흡수스펙트럼(absorbance spectra)을 측정하였다. 기판온도가 상승하면 저항율이 감소하였으며, Ga/(In+Ga) 조성비가 0.30에서 0.72까지 증가됨에 따라 밴드갭(band gap)이 1.26eV, 1.30eV, 1.43eV,1.47eV로 증가됨을 알 수 가 있었다. 동일한 조건에서 조성비를 증가하므로써 두께가 증가되었으며 저항율은 감소하였다. 본 실험을 통하여 CIGS 박막을 제작하면 광흡수률(optical absorbance ratio) 및 광전류(optical current)가 증가 될 것으로 예측할 수가 있다.

• The Korean Journal of Ceramics
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• 제7권1호
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• pp.20-25
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• 2001

PbTiO$_3$ thin films were prepared by low-pressure thermal plasma deposition on (100)Pt/(100)MgO substrates. Mist of source material in which metal alkoxides are dissolved in 2-methoxyethanol was introduced into plasma through heating furnace and deposited onto substrates at $600^{\circ}C$. As-deposited PbTiO$_3$/Pt/MgO thin film prepared at 1.33$\times$10$^4$ Pa was grown epitaxially, but was consisted of many rectangular shaped grains, with many grain boundaries and it was impossible to measure electric properties. As-deposited film prepared at 1.00$\times$10$^4$ Pa showed weak peaks of X-ray diffraction and the film was not grown epitaxially. On the other hand, the film after annealed at $700^{\circ}C$ showed strong diffraction peaks and epitaxial growth was also observed. For annealed film, moreover, no clear grain boundaries were observed. The value of ${\varepsilon}_r$, tan${\delta}$, Pr and Ec of annealed film were 160, 3.2%, 10.4${\mu}$C.cm$^-2$ and 51.2kV.cm$^-1$, respectively. Since the composition, Pb/Ti, measured by EDS attaching to SEM changed point by point, the distribution of composition in annealed film was investigated and found out several relations between composition and electric properties. At stoichiometric composition, Pr and Ec showed the lowest value and they gradually became large as composition deviated from stoichiometric one. Moreover, the value of ${\varepsilon}_r$ became gradually large as the ratio of Ti became high.

• 한국콘텐츠학회논문지
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• 제12권9호
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• pp.68-79
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• 2012

영화는 내러티브의 구현을 위해 다양한 기법들이 서로 유기적으로 상호작용하여 관객의 지각에 영향을 준다. 영화 형식을 구성하는 기법들은 형식적 체계로서 영화의 내용과 동기화되어 특정한 효과를 유발시켜 관객의 정서적 체험의 강도와 깊이를 강화시켜주는 역할을 한다. 본 연구는 시각적 내러티브의 하나인 구도미학에 관한 연구로 충격적인 실화를 재구성한 영화 <도가니 SILENCE>(2011)를 분석 대상으로 삼았다. 본 연구는 치밀한 화면구성과 기법의 활용이 극대화된 영화 <도가니>의 내러티브에 적용된 구도기법을 분석해보고, 나아가 영화형식의 의미와 중요성을 제고해 보는 것이 연구목적이다. 이러한 연구는 영화에 내재되어 있는 의미와 정서가 쇼트를 통해 어떻게 시각적으로 구현되는지, 나아가 구도가 서사화법으로서 어떻게 영화재 기능을 수행하는지 고찰해 보는 것에 그 의의가 있다고 할 수 있다.

• 디자인학연구
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• 제16권3호
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• pp.263-272
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• 2003

모션그래픽스는 짧은 영화가 아니며 디자인 특유의 커뮤니케이션방식을 갖는다. 그래픽디자인에서 공간구성이 필요한 것처럼 모션그래픽스에서는 시간구성이 요구된다. 이미 1920년대 독일 바우하우스의 예술가들은 추상에니메이션을 위한 계획안에서 시간구성을 시도한 바 있다. 같은 시대에 러시아의 몽타주영화에서는 서로 이질적인 이미지들을 연속적으로 충돌시킴으로써 새로운 의미를 발생시키는 움직이는 이미지 구성이 시도되었다. 오늘날 디지털 시대를 맞이하여 모션그래픽스에서는 동영상, 사진, 일러스트레이션, 타이포 등 다양한 요소들이 구성(Composition)된다. 몽타주영화에서 편집이 이미지들을 시간의 막대에 한 줄로 늘어놓는 1차원적인 구성이라면 오늘날 모션그래픽스에서 편집은 수많은 레이어(Layer)를 통해 여러 요소들을 복합적으로 구성하는 특징을 갖는다. 모션그래픽스에서 시간구성을 위해서는 시나리오나 스토리 보오드 이외에 시간구조를 짜고 시각적인 리듬을 만드는 일이 필요하다. 시간구성은 음악에서 작곡과 같은 원리를 갖는다. 추상애니메이션이나 몽타주영화의 시간구성이 간단한 단음의 멜로디라면 모션그래픽스에서 시간구성은 여러 개의 음이 한꺼번에 울리는 교향악과 같다. 다양한 구성요소들이 각기 다른 속도로 동시에 전개되는 것이다.

• 인문언어
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• 제2권1호
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• pp.259-284
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• 2002

In the history of cinema, Sergei Eisenstein is always considered as a pioneer to conceive of cinema primarily as a form of expressing thought rather than as a representation of reality. For him, montage is the indispensable method to construct an open totality of thought and image in movement. It functions as a basic thread running through two poles of filmic composition, that is, the organic and the pathetic. The organic is concerned with the composition of the film structure as a whole, while the pathetic is involved in an ongoing process of registering a leaping point in various filmic sequences. The ultimate goal of montage for Eisenstein is to create the cinema of ideas which can synthesize both emotional and intellectual elements in the filmic composition. In his system of intellectual cinema, the identity of image and thought externalizes the sensory-motor unity of nature and man along the ascending spiral of centrifugal force of the film. Indeed, in both theory and practice, Eisenstein firmly argues that nature not only provides basic laws for the organic composition of the film, but also expresses itself in the form of the whole which brings out the experience of totality in the film text, the audience, and surely Eisenstein himself.

• 반도체디스플레이기술학회지
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• 제4권1호
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• pp.43-48
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• 2005

Metaloganic chemical vapor deposition, also known as metalorganic vapor phase epitaxy has become one of the main techniques for growing thin, high purity films for compound semiconductors such as GaAs, InP, and InGaAsP. In this study, the distribution of growth rate and composition of InGaAsP, InGaP, and InGaAs films are studied using computational method. The influences of process parameters such as pressure, temperature and precursors' partial pressure on the growth rate and composition distributions are analyzed. The film growth rate is increased in the upstream part according to the increase of temperature but not in the downstream part. The Ga composition in InGaAsP film shows an asymptotic behavior for temperature variation but As composition varies significantly within the temperature range considered in the present study. The overall film growth rates of InGaP, InGaAs and InGaAsP are decreased with increasing the Ga/In ratios of the source gases. Pressure variation does not seem to be a significant parameter to the film growth. Film growth characteristics of tertiary films such as InGaP and InGaAs show similar trends to the quaternary film, InGaAsP.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2011년도 제40회 동계학술대회 초록집
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• pp.264-264
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• 2011

Poly [(N, N'-oxydiphenylene) pyromellitimide], polyimide (PI) film은 기계적 강도가 매우 우수하고 열적, 화학적 안정성이 뛰어난 재료로서 전자제품의 소형화, 경령화, 고성능화를 위한 차세대 flexible electronic device에 적용하기 위하여 많은 연구가 진행되고 있다. 그러나 PI의 특성상, 매우 낮은 표면에너지로 인해 금속과의 접촉력이 좋지 않은 단점을 가지고 있다. 본 연구에서는, 금속박막과 PI film 과의 접촉력을 증가시키기 위해 remote-type modified dielectric barrier discharge (DBD) module을 이용하여 대기압 플라즈마 표면처리를 하였다. 실험에 사용된 gas composition은 각각 $N_2$/ He/ $SF_6$, $N_2$/ He/ $O_2$, $N_2$/ He/ $SF_6$/ $O_2$, $N_2$/ He/ $SF_6$/ $O_2$ 이다. $N_2$/ He/ $SF_6$/ $O_2$ gas composition을 이용하여 PI 표면을 플라즈마 처리한 경우, C=O 결합이 PI film 위에 생성됨으로써, 접촉각이 매우 낮게 형성됨을 관찰할 수 있었다. 이와는 반대로 $N_2$/ He/ $SF_6$ gas composition 을 사용하였을 경우에는 C-Fx 화학적 결합이 생성되기 때문에 가장 높은 접촉각이 형성됨을 관찰할 수 있었다. 특히, $N_2$ (40 slm)/ He (1 slm)/ $SF_6$ (1.2 slm) gas composition에 $O_2$ gas를 0.2 slm부터 1.0 slm까지 변화시켜가며 PI film 표면을 처리한 결과, $O_2$ gas를 0.9 slm 첨가하였을 때, 가장 낮은 $9.3^{\circ}$의 접촉각을 얻을 수 있었다. 이는 0.9 slm의 $O_2$ gas를 첨가하였을 때, 가장 많은 양의 $O_2$ radical이 생성되기 때문에 많은 양의 C=O 결합이 생성되기 때문이다. 최적화된 $N_2$ (40 slm)/ He (1 slm)/ $SF_6$ (1.2 slm)/ $O_2$ (0.9 slm) gas composition 조건에서 Ag film과 PI film과의 접촉력을 관찰할 결과, 111 gf/mm를 얻을 수 있었다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 추계학술대회 논문집 Vol.14 No.1
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• pp.193-196
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• 2001

Single phase $CuInS_2$ thin film with the highest diffraction peak (112) at diffraction angle $(2\theta)$ of $27.7^{\circ}$ and the second highest diffraction peak (220) at diffraction angle $(2\theta)$ of $46.25^{\circ}$ was well made with chalcopyrite structure at substrate temperature of $70^{\circ}C$, annealing temperature of $250^{\circ}C$, annealing time of 60 min. The $CuInS_2$ thin film had the greatest grain size of $1.2{\mu}m$ and Cu/In composition ratio of 1.03. Lattice constant of a and c of that $CuInS_2$ thin film was 5.60 A and 11.12 A respectively. Single phase $CuInS_2$ thin films were accepted from Cu/In composition ratio of 0.84 to 1.3. P-type $CuInS_2$ thin films were appeared at over Cu/In composition ratio of 0.99. Under Cu/In composition ratio of 0.96, conduction types of $CuInS_2$ thin films were n-type. Also, fundamental absorption wavelength, the absorption coefficient and optical energy band gap of p-type $CuInS_2$ thin film with Cu/In composition ratio of 1.3 was 837 nm, $3.0{\times}104cm^{-1}$ and 1.48 eV respectively. When Cu/In composition ratio was 0.84, fundamental absorption wavelength, the absorption coefficient and optical energy band gap of n-type $CuInS_2$ thin film was 821 nm, $6.0{\times}10^4cm^{-1}$ and 1.51 eV respectively.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 추계학술대회 논문집
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• pp.193-196
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• 2001

Single phase CuInS$_2$ thin film with the highest diffraction peak (112) at diffraction angle (2$\theta$) of 27.7$^{\circ}$ and the second highest diffraction peak (220) at diffraction angle (2$\theta$) of 46.25$^{\circ}$ was well made with chalcopyrite structure at substrate temperature of 70 $^{\circ}C$, annealing temperature of 25$0^{\circ}C$, annealing time of 60 min. The CuInS$_2$ thin film had the greatest grain size of 1.2 ${\mu}{\textrm}{m}$ and Cu/In composition ratio of 1.03. Lattice constant of a and c of that CuInS$_2$ thin film was 5.60 $\AA$ and 11.12 $\AA$ respectively. Single phase CuInS$_2$ thin films were accepted from Cu/In composition ratio of 0.84 to 1.3. P-type CuInS$_2$ thin films were appeared at over Cu/In composition ratio of 0.99. Under Cu/In composition ratio of 0.96, conduction types of CuInS$_2$ thin films were n-type. Also, fundamental absorption wavelength, the absorption coefficient and optical energy band gap of p-type CuInS$_2$ thin film with Cu/In composition ratio of 1.3 was 837 nm, 3.0x10 $^4$ $cm^{-1}$ / and 1.48 eV respectively. When CuAn composition ratio was 0.84, fundamental absorption wavelength, the absorption coefficient and optical energy band gap of n-type CuInS$_2$ thin film was 821 nm, 6.0x10$^4$ $cm^{-1}$ / and 1.51 eV respectively.