• Title/Summary/Keyword: Few-Time Programmable

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Development of the Digital Controller for High Precision Digital Power Supply (고정밀전원장치를 위한 디지털 제어기 개발)

  • Ha, K.M.;Lee, S.K.;Kim, Y.S.
    • Proceedings of the Korean Society of Marine Engineers Conference
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    • 2006.06a
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    • pp.249-250
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    • 2006
  • In this paper, hardware design and implementation of digital controller for the High Precision Digital Power Supply (HPDPS) based on Digital Signal Processor (DSP) and Field Programmable Gate Array (FPGA) is presented. Developed digital controller is composed of high resolution Digital Pulse Width Modulation (DPWM) and high resolution analog to digital converter circuit with anti-aliasing filter. And Digital Signal Processor (DSP) has the capability of a few micro-second calculation time for one feedback loop. 32-bit DSP and DPWM with 150[ps] step resolution is used to implement the HPDPS. Also 18-bit 2 mega sample per second ADC board is adopted for the developed digital controller. Also, hardware structure of the developed digital controller and experimental results of the first prototype board for HPDPS is described.

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Design of High-Speed Dynamic CMOS PLA (고속 다이나믹 CMOS PLA의 설계)

  • 김윤홍;임인칠
    • Journal of the Korean Institute of Telematics and Electronics B
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    • v.28B no.11
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    • pp.859-865
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    • 1991
  • The paper proposes a design of high-speed dynamic CMOS PLA (Programmable Logic Array) which performs stable circuit operation. The race problem which nay occur in a NOR-NOR implementation of PLA is free in the proposed dynamic CMOS PLA by delaying time between the clocks to the AND- and to the OR-planes. The delay element has the same structure as the product line of the longest delay in the AND p`ane. Therefore it is unnecessary to design the delay element or to calculate correct delay time. The correct delay generated by the delay element makes the dynamic CMOS PLA to perform correct and stable circuit operation. Theproposed dynamic CMOS PLA has few variation of switching delay with the increasing number of inputs or outputs in PLA. It is verified by SPICE circuit simulation that the proposed dynamic CMOS PLA has the better performance over existing dynamic CMOS PLA's.

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SVM-Based Speaker Verification System for Match-on-Card and Its Hardware Implementation

  • Choi, Woo-Yong;Ahn, Do-Sung;Pan, Sung-Bum;Chung, Kyo-Il;Chung, Yong-Wha;Chung, Sang-Hwa
    • ETRI Journal
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    • v.28 no.3
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    • pp.320-328
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    • 2006
  • Using biometrics to verify a person's identity has several advantages over the present practice of personal identification numbers (PINs) and passwords. To gain maximum security in a verification system using biometrics, the computation of the verification as well as the storing of the biometric pattern has to take place in a smart card. However, there is an open issue of integrating biometrics into a smart card because of its limited resources (processing power and memory space). In this paper, we propose a speaker verification algorithm using a support vector machine (SVM) with a very few features, and implemented it on a 32-bit smart card. The proposed algorithm can reduce the required memory space by a factor of more than 100 and can be executed in real-time. Also, we propose a hardware design for the algorithm on a field-programmable gate array (FPGA)-based platform. Based on the experimental results, our SVM solution can provide superior performance over typical speaker verification solutions. Furthermore, our FPGA-based solution can achieve a speed-up of 50 times over a software-based solution.

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Design of Zero-Layer FTP Memory IP (PMIC용 Zero Layer FTP Memory IP 설계)

  • Ha, Yoongyu;Jin, Hongzhou;Ha, Panbong;Kim, Younghee
    • The Journal of Korea Institute of Information, Electronics, and Communication Technology
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    • v.11 no.6
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    • pp.742-750
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    • 2018
  • In this paper, in order to enable zero-layer FTP cell using only 5V MOS devices on the basis of $0.13{\mu}m$ BCD process, the tunnel oxide thickness is used as the gate oxide thickness of $125{\AA}$ of the 5V MOS device at 82A. The HDNW layer, which is the default in the BCD process, is used. Thus, the proposed zero layer FTP cell does not require the addition of tunnel oxide and DNW mask. Also, from the viewpoint of memory IP design, a single memory structure which is used only for trimming analog circuit of PMIC chip is used instead of the dual memory structure dividing into designer memory area and user memory area. The start-up circuit of the BGR (Bandgap Reference Voltage) generator circuit is designed to operate in the voltage range of 1.8V to 5.5V. On the other hand, when the 64-bit FTP memory IP is powered on, the internal read signal is designed to maintain the initial read data at 00H. The layout size of the 64-bit FTP IP designed using the $0.13-{\mu}m$ Magnachip process .is $485.21{\mu}m{\times}440.665{\mu}m$($=0.214mm^2$).