• Title/Summary/Keyword: Ferromagnetic transition temperature

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ROOM TEMPERATURE FERROMAGNETISM IN TRANSITION METAL DOPED OXIDE SEMICONDUCTORS, $TiO_2$ and ZnO

  • Y. H. Jeong;S-J. Han;Park, J.H.
    • Proceedings of the Korean Magnestics Society Conference
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    • 2003.06a
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    • pp.17-17
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    • 2003
  • Semiconductors with ferromagnetism at room temperature has been actively searched for in recent years; a prospect of devices using both charge and spin continuously gives impetus to the activities. Transition metal doped oxide materials have been of particular interest. Co substituted ZnO [1] and TiO$_2$ [2] thin films, for example, were reported to show ferromagnetic properties at room temperature. However, various studies do not seem to converge on a definite picture [3,4,5]. The issue is rather fundamental: whether a system shows ferromagnetic properties at all, and in case it does, whether the system possesses a close coupling between magnetism and transport properties. In this talk, we shall assess the current status of transition metal doped oxide materials as room temperature ferromagnetic semiconductors.

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A Study on the Conducting Behavior of La-Ca-Mn-O in the vicinity of Phase Transition Temperature (임계점 부근에서 LCMO의 전도 특성에 대하여)

  • 송하정;김우진;권순주
    • Journal of the Korean Magnetics Society
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    • v.8 no.4
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    • pp.179-184
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    • 1998
  • Colossal magnetoresistance is closely related to (but is not) the abrupt change of electrical resistivity in the vicinity of Curie temperature, which is caused by the temperature dependent paramagnetic-ferromagnetic phase transition and concurrent change of electrical conducting mechanism. A resistivity-temperature equation is presented to fully describe the overall behavior, especially the abrupt change. The main ingredients of the equation are a simple effective media theory and a function for the temperature dependent fraction of ferromagnetic phase. The model fits very well to the measured resistivity-temperature curve of $La_{0.7}Ca_{0.3}MnO_3$.

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Electrical Properties of SrRuO3 Thin Films with Varying c-axis Lattice Constant

  • Chang, Young-J.;Kim, Jin-I;Jung, C.U.
    • Journal of Magnetics
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    • v.13 no.2
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    • pp.61-64
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    • 2008
  • We studied the effect of the variation of the lattice constant on the electrical properties of $SrRuO_3$ thin films. In order to obtain films with different volumes, we varied the substrate temperature and oxygen pressure during the growth of the films on $SrTiO_3$ (001) substrates. The films were grown using a pulsed laser deposition method. The X-ray diffraction patterns of the grown films at low temperature and low oxygen pressure indicated the elongation of the c-axis lattice constant compared to that of the films grown at a higher temperature and higher oxygen pressure. The in-plane strain states are maintained for all of the films, implying the expansion of the unit-cell volume by the oxygen vacancies. The variation of the electrical resistance reflects the temperature dependence of the resistivity of the metal, with a ferromagnetic transition temperature inferred form the cusp of the curve being observed in the range from 110 K to 150 K. As the c-axis lattice constant decreases, the transition temperature linearly increases.

Magnetoresistance of the Ferromagnetic Combined System

  • Park, Seung-Iel;Kim, Chul Sung
    • Journal of Magnetics
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    • v.9 no.1
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    • pp.5-8
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    • 2004
  • For the ferromagnetic combined samples, results of x-ray diffraction patterns showed no evidence of reaction between the $La_{0.67}Ca_{0.33}MnO_3, La_{0.67}Sr_{0.33}MnO_3$ and $CoFe_2O_4$. For the amount of $CoFe_2O_4$ increased, the Curie temperature of combined samples showed no appreciable change, whereas a metal-semiconductor transition temperature rapidly decreased. For the $La_{0.67}Sr_{0.33}MnO_3$ and 20 wt % $CoFe_2O_4$ combined sample, the metal-semiconductor transition temperature was decreased to 160 K compared with the $La_{0.67}Sr_{0.33}MnO_3$ with 192 K.

Tuning of the ferromagnetic transition by impurity doping in Ru$Sr_2$EuCe$Cu_2$$O_z$ (불순물 치환을 통한 Ru$Sr_2$EuCe$Cu_2$$O_z$ 계의 강자성 천이온도의 조절특성)

  • Lee H. K;Kim Y. H;Kwon O. H
    • Progress in Superconductivity
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    • v.6 no.1
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    • pp.37-40
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    • 2004
  • We investigated the effects of impurity doping on the electrical transport and magnetic properties of TEX>$(Ru, Sn)(Sr, La)<_2$$EuCeCu_2$$O_{z}$ samples. We found that Sn substitution fur Ru causes a significant decrease of the volume fraction of ferromagnetic phase, as well as a decrease of the temperature where the ferromagnetic component is observed. La substitution for Sr leads to an increase of the magnetic ordering temperature with a moderate change of ferromagnetic component. The experimental results are discussed in conjunction with the structural data, transport properties and a possible change of oxygen content.

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Phase Transition Temperature Shift of a Ferromagenetic Gadelonium Film due to the Finite-Size Effects (Finite-Size Errect에 의한 강바성 Gd박막의 상전이온도 이동)

  • Rhee, Il-Su;Lee, Eui-Wan;Lee, Sang-Yun
    • Korean Journal of Materials Research
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    • v.3 no.1
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    • pp.3-6
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    • 1993
  • Abstract We report the result of measurement for the ferro-to paramagnetic phase transition temperature shift of a gadolinium film. The phase transition temperature has been determined by measuring the resistance changes of film as function of temperature. At the ferro-to paramagnetic transition temperature, we can observe the inflection point of resistance changes. The phase transition temperature of 6600$\AA$ gadolinium film is found to be shifted by 4 $\pm$ 0.$3^{\circ}C$ below the transition temperature of bulk gadolinium. This is the first measurement for the phase transition temperature shift of ferromagnetic gadolinium film. This and further results might give a milestone in resolving the differences between experiments and finite-size scaling theory.

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Electrical Transport Properties of La0.5Sr0.5CrO3 Ceramics (La0.5Sr0.5CrO3 세라믹스의 전기전도특성)

  • Jung, Woo-Hwan
    • Korean Journal of Materials Research
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    • v.26 no.1
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    • pp.35-41
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    • 2016
  • The electrical transport properties of $La_{0.5}Sr_{0.5}CrO_3$ below room temperatures were investigated by dielectric, dc resistivity, magnetic properties and thermoelectric power. Below $T_c$, $La_{0.5}Sr_{0.5}CrO_3$ contains a dielectric relaxation process in the tangent loss and electric modulus. The $La_{0.5}Sr_{0.5}CrO_3$ involves the transition from high temperature thermal activated conduction process to low temperature one. The transition temperature corresponds well to the Curie point. The relaxation mechanism has been discussed in the frame of electric modulus spectra. The scaling behavior of the modulus suggests that the relaxation mechanism describes the same mechanism at various temperatures. The low temperature conduction and relaxation takes place in the ferromagnetic phase. The ferromagnetic state in $La_{0.5}Sr_{0.5}CrO_3$ indicates that the electron - magnon interaction occurs, and drives the carriers towards localization in tandem with the electron - lattice interaction even at temperature above the Curie temperature.

Liquid Phase Deposition of Transition Metal Ferrite Thin Films: Synthesis and Magnetic Properties

  • Caruntu Gabriel;O'Connor Charles J.
    • Journal of the Korean Ceramic Society
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    • v.43 no.11 s.294
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    • pp.703-709
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    • 2006
  • We report on the synthesis of highly uniform, single phase zinc and cobalt thin films prepared by the Liquid Phase Deposition (LPD) method. X-Ray diffraction, TGA and EDX measurements support the assumption that the as deposited films are constituted by a mixture of crystallized FeOOH and amorphous M(OH)$_2$ (M=Co, Zn) which is converted upon heat treatment in air at 600?C into the corresponding zinc ferrites. The films with adjustable chemical compositions are identified with a crystal structure as spinel-type and present a spherical or rod-like microstructure, depending on the both the nature and concentration of the divalent transition metal ions. Zinc ferrite thin films present a superparamagnetic behavior above blocking temperatures which decrease with increasing the Zn content and are ferromagnetic at 5 K with coercivities ranging between 797.8 and 948.5 Oe, whereas the cobalt ferrite films are ferromagnetic at room temperature with magnetic characteristics strongly dependent on the chemical composition.