• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1999.05a
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• pp.17-20
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• 1999

The retention and fatigue properties of ferroelectric LiNbO$_3$ thin films were studied. Metal-ferroelectric-semiconductor(MFS) devices by using rapid thermal annealed LiNbO$_3$/Si structures were successfully fabricated and demonstrated nonvolatile memory operations of the MFS devices. The I$_{D}$-V$_{G}$ characteristics of MFSFET\`s showed a hysteresis loop due to the ferroelectric nature of the LiNbO$_3$ thin film. The ferroelectric capacitors showed practically no polarization degradation up to about 10$^{10}$ switching cycles when subjected to symmetric bipolar voltage pulse (peak-to-peak 6V, 50% duty cycle) in the 500kHz. The retention properties of the LiNbO$_3$ thin films were quite good up to about 10$^{3}$ s . s .