• Title/Summary/Keyword: Ferroelectric Polymer

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Phase Transition Properties of Ferroelectric Polymer Films (강유전 고분자 박막의 상전이 특성)

  • Park, Chul-Woo;Jung, Chi-Sup
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.27 no.2
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    • pp.97-103
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    • 2014
  • Phase transition properties of the copolymer films of polyvinylidene fluoride (PVDF) and trifluoroethylene(TrFE), P(VDF-TrFE), were studied with X-ray diffraction (XRD) and polarization modulated ellipsometry (PME). XRD studies on both Langmuir-Blodgett (LB) films and spin coated films exhibit conversions from ferroelectric phase to paraelectric phase at $108{\pm}2^{\circ}C$ on heating and paraelectric phase to ferroelectric phase at $78{\pm}2^{\circ}C$ on cooling. The presence of the ferroelectric-paraelectric phase transition is also confirmed by the PME technique for the first time in this study. PME was proved to be a very sensitive tool in the measurement of the structural changes at the nano-thickness films.

Nonvolatile Ferroelectric Memory Devices Based on Black Phosphorus Nanosheet Field-Effect Transistors

  • Lee, Hyo-Seon;Lee, Yun-Jae;Ham, So-Ra;Lee, Yeong-Taek;Hwang, Do-Gyeong;Choe, Won-Guk
    • Proceedings of the Korean Vacuum Society Conference
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    • 2016.02a
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    • pp.281.2-281.2
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    • 2016
  • Two-dimensional van der Waals (2D vdWs) materials have been extensively studied for future electronics and materials sciences due to their unique properties. Among them, black phosphorous (BP) has shown infinite potential for various device applications because of its high mobility and direct narrow band gap (~0.3 eV). In this work, we demonstrate a few-nm thick BP-based nonvolatile memory devices with an well-known poly(vinylidenefluoride-trifluoroethylene) [P(VDF-TrFE)] ferroelectric polymer gate insulator. Our BP ferroelectric memory devices show the highest linear mobility value of $1159cm^2/Vs$ with a $10^3$ on/off current ratio in our knowledge. Moreover, we successfully fabricate the ferroelectric complementary metal-oxide-semiconductor (CMOS) memory inverter circuits, combined with an n-type $MoS_2$ nanosheet transistor. Our memory CMOS inverter circuits show clear memory properties with a high output voltage memory efficiency of 95%. We thus conclude that the results of our ferroelectric memory devices exhibit promising perspectives for the future of 2D nanoelectronics and material science. More and advanced details will be discussed in the meeting.

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Fabrication of PZT Tubular Structures by a Template-wetting Process

  • Shaislamov, U.A.;Hong, S.K.;Yang, B.
    • Journal of the Korean Ceramic Society
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    • v.44 no.5 s.300
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    • pp.141-143
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    • 2007
  • Nanotubes and microtubes of ferroelectric lead zirconate titanate (PZT) were synthesized by means of a simple and convenient process called a template-wetting process. Nanoporous alumina and macroporous Si were used as template materials to fabricate the corresponding tubes. For the improvement of the wetting properties of the wetting solution, the PZT solution was mixed with a polymer. The polymer was removed completely during annealing. The grain growth processes of the PZT nanotubes during baking and furnace annealing were examined by means of field emission electron microscope (FE-SEM) and X-ray diffractometry (XRD).

Electro-Optic Devices Based on Ferroelectric Liquid Crystal/Polymer Composite Films

  • Park, Jae-Hong;Kim, Sung-Jin;Lee, Won-Je;Kim, Jae-Hoon;Lee, Sin-Doo
    • 한국정보디스플레이학회:학술대회논문집
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    • 2002.08a
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    • pp.910-913
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    • 2002
  • We have achieved an improved stability of an analog electro-optic effect in FLC/polymer composite films. The optimization of device depends on both the composition of the FLC/polymer mixture and the energy of UV irradiation. This device exhibits continuous gray scales and the mechanical stability against external forces.

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Characterization of Thermo-optical Properties of Ferroelectric P(VDF-TrFE) Copolymer Using Febry-Perot Interferometer (Febry-Perot 간섭계를 이용한 강유전 P(VDF-TrFE) 폴리머 열광학 특성평가)

  • Song, Hyun-Cheol;Kim, Jin-Sang;Yoon, Seok-Jin;Jeong, Dae-Yong
    • Korean Journal of Materials Research
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    • v.19 no.4
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    • pp.228-231
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    • 2009
  • Phase transition in ferroelectric polymer is very interesting behavior and has been widely studied for real device applications, such as actuators and sensors. Through the phase transition, there is structural change resulting in the change of electrical and optical properties. In this study, we fabricated the Febry-Perot interferometer with the thin film of ferroelectric P(VDF-TrFE) 50/50 mol% copolymer, and thermo-optical properties were investigated. The effective thermo-optical coefficient of P(VDF-TrFE) was obtained as $2.3{\sim}3.8{\times}10^{-4}/K$ in the ferroelectric temperature region ($45^{\circ}C{\sim}65^{\circ}C$) and $6.0{\times}10^{-4}/K$ in the phase transition temperature region ($65^{\circ}C{\sim}85^{\circ}C$), which is a larger than optical silica-fiber and PMMA. The resonance transmission peak of P(VDF-TrFE) with the variation of temperature showed hysteretic variation and the phase transition temperature of the polymer in heating condition was higher than in the cooling condition. The elimination of the hysteretic phase transition of P(VDF-TrFE) is necessary for practical applications of optical devices.

Electrical Characteristics of Organic Ferroelectric Memory Devices Fabricated on Elastomeric Substrate (엘라스토머 기판 상에 제작한 유기 강유전체 메모리 소자의 전기적 특성)

  • Jung, Soon-Won;Ryu, Bong-Jo;Koo, Kyung-Wan
    • The Transactions of The Korean Institute of Electrical Engineers
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    • v.67 no.6
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    • pp.799-803
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    • 2018
  • We demonstrated memory thin-film transistors (MTFTs) with organic ferroelectric polymer poly(vinylidene fluoride-co-trifluoroethylene) and an amorphous oxide semiconducting indium gallium zinc oxide channel on the elastomeric substrate. The dielectric constant for the P(VDF-TrFE) thin film prepared on the elastomeric substrate was calculated to be 10 at a high frequency of 1 MHz. The voltage-dependent capacitance variations showed typical butterfly-shaped hysteresis behaviors owing to the polarization reversal in the film. The carrier mobility and memory on/off ratio of the MTFTs showed $15cm^2V^{-1}s^{-1}$ and $10^6$, respectively. This result indicates that the P(VDF-TrFE) film prepared on the elastomeric substrate exhibits ferroelectric natures. The fabricated MTFTs exhibited sufficiently encouraging device characteristics even on the elastomeric substrate to realize mechanically stretchable nonvolatile memory devices.

A Poling Study on a Piezoceramic/Polymer 0-3 Composites for Hydrophone Applications (Hydrophone 응용을 위한 Piezoceramic/Polymer 0-3 Composite의 분극 개선)

  • Lee, S.H.;Cho, H.C.;SaGong, G.;Seul, S.D.;Koo, H.B.
    • Proceedings of the KIEE Conference
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    • 1989.07a
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    • pp.349-352
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    • 1989
  • Poling piezoelectric ceramic-polymer composites with 0-3connectivity is difficult because of the high dielectric constant of most of the ferroelectric filler materials, and the high resistivity of the polymer matrix. To aid in poling this type of composite, conductivity of the polymer phase can be controlled by adding small amount of a semiconductor phase such as germanium, carbon or silicon. In this study, flexible piezoelectric composites of $PbTiO_3$ powder and Eccogel polymer were developed using small amounts of a semiconducting phase. These composites were poled rapidly at low voltages, resulting in properties superior to composites prepared without a conductive phase. The effect of addition of various conductive phase with different volume percentage on the dielectric and piezoelectric properties of the composite are discussed here.

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