• Korean Journal of Materials Research
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• v.13 no.8
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• pp.503-508
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• 2003

The purpose of this study is to investigate the effect of $V_2$$O_{5}$ addition on the Ag and Cu precipitation in the NiCuZn ferrite layers of 7.7${\times}$4.5${\times}$1.0 mm sized multi-layer chip inductors prepared by the screen printing method using 0∼0.5 wt% $V_2$$O_{5}$ -doped ferrite pastes. With increasing the $V_2$$O_{5}$ content and sintering temperature, Ag and Cu oxide coprecipitated more and more at the polished surface of ferrite layers during re-annealing at $840^{\circ}C$. It was thought that during the sintering process, V dissolved in the NiCuZn ferrite lattice and the Ag-Cu liquid phase of low melting point was formed in the ferrite layers due to the Cu segregation from the ferrite lattice and Ag diffusion from the internal electrode. During re-annealing at $840^{\circ}C$, the Ag-Cu liquid phase came out the polished surface of ferrite layers, and was decomposed into the isolated Ag particles and the Cu oxide phase during the cooling process.

• Journal of the Korean Ceramic Society
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• v.36 no.3
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• pp.284-292
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• 1999

고체함량을 변화시킨 NiCuZn 페라이트 페이스트를 사용하여 스크린 인쇄법으로 7.7$\times$4.5$\times$1.0 nm 크기의 칩인덕터를 제조한 후, 페라이트 페이스트의 고체함량에 따른 수축률, 소결밀도, 미세구조, 계면반응 등의 물리적 특성 및 자기적 특성 변화를 분석하였다. 조온소결을 위하여 attrition milling 공정을 통하여 미세분말을 준비하였으며, 소결온도는 880~94$0^{\circ}C$로 변화시켰다. 90$0^{\circ}C$에서 2시간 열처리된 페라이트 후막의 소결밀도는 고체함량이 50,55,60%로 증가할수록 5.12,5.14,5.18g/㎤로 증가하였으며, 이에 따라 칩 인덕터 시편들의 주파수 10 MHz에서 L값이 2.1,2.3,2.5 $\mu$H로 커졌다.Q값은 소결밀도 증가에 의한 Q값 증가효과와 아울러 입자가 커짐에 따른 반대효과로 인하여 고체함량에 따라 87,90,94로 큰 변화가 없었다. 페라이트 페이\ulcorner의 고체함량 및 소결온도와 무관하게 Ag 성분의 페라이트 쪽으로의 확산현상은 나타나지 않았다.

• Journal of the Korean Magnetics Society
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• v.13 no.3
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• pp.109-114
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• 2003

The purpose of this study Is to investigate the effect of $V_2$O$_{5}$ addition on the microstructures and magnetic properties of 7.7${\times}$4.5${\times}$1.0 mm sized multi-layer chip inductors prepared by the screen printing method using 0∼0.5 wt％ $V_2O_{5}$-doped NiCuZn ferrite pastes. With increasing the $V_2O_{5}$ content, the exaggerated grain growth of ferrite layers was developed due to the promotion of Ag diffusion and Cu segregation into the grain boundaries oi ferrites, which affected significantly the magnetic properties of the chip inductors. After sintering at $900^{\circ}C$, the inductance at 10 MHZ of the 0.5 wt％ $V_2O_{5}$-doped chip inductor was 3.7 ${\mu}$H less than 4.2 ${\mu}$H of the 0.3 wt% $V_2O_{5}$-doped one, which was thought to be caused by the residual stress at the ferrite layers increased with the promotion of Ag diffusion and Cu segregation. The quality factor of the 0.5 wt% $V_2O_{5}$-doped chip inductor decreased with increasing the sintering temperature, which was considered to be caused by the electrical resistivity of the ferrite layer decreased with the promotion of Ag/cu segregation at the grain boundaries and the growth of the mean grain size of ferrite due to exaggerated grain growth of ferrite layers.