• 제목/요약/키워드: Fermi level

검색결과 138건 처리시간 0.031초

The Analytical Solutions for Finite Clusters of Cubic Lattices

  • Gean-Ha Ryu;Hojing Kim
    • Bulletin of the Korean Chemical Society
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    • 제12권5호
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    • pp.544-554
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    • 1991
  • Using the Huckel method, we obtain the analytical expressions for eigenvalues and eigenvectors of s.c., f.c.c. and b.c.c. clusters of rectangular parallelepiped shape, and of an arbitrary size. Our formula converage to those derived from the Bloch sum, in the limit of infinite extension. DOS and LDOS reveal that the major contribution of the states near Fermi level originates from the surface atoms, also symmetry of DOS curves disappears by the introduction of 2nd nearest neighbor interactions, in all the cubic lattices. An accumulation of the negative charges on surface of cluster is observed.

Temperature and Coverage Dependent Quasi-reversible Two-photon Photoemission of 1-phenyl-1-propyne on Cu(111)

  • Sohn, Young-Ku;Wei, Wei;Huang, Weixin;White, John M.
    • Bulletin of the Korean Chemical Society
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    • 제32권6호
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    • pp.1980-1984
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    • 2011
  • A temperature- and coverage-dependant quasi-reversible change in two-photon photoemission (2PPE) of chemisorbed 1-phenyl-1-propyne (PP) on Cu(111) is reported. For PP on Cu(111) at 300 K probed at a photon energy of 4.13 eV, two broad peaks of comparable intensity show final state energies of 7.25 and 7.75 eV above the Fermi level. The former peak could be assigned to the first image potential state (IS, n = 1) and/or unoccupied molecular orbital (UMO), located at 3.1 eV above the Fermi level. The latter is plausibly attributed to a mix of unoccupied higher-order IS (and/or UMO) and occupied surface state (SS) of Cu(111). With decreasing the temperature, the former 2PPE peak shows a shift in position by about 0.2 eV, and the latter exhibits a dramatic increase in intensity. In the system, intermolecular interactions (and/or order-disorder transition) of PP and substrate lattice temperature may play a significant role in change in photoexcitation lifetime (or excitation cross-section), and the unoccupied molecular orbital (UMO)-metal (IS) charge transfer coupling. Our unique 2PPE results provide a deeper insight for understanding photoexcitation charge transfer with temperature in an organic molecule/metal system.

La7Os4C9의 전자구조와 화학결합 (Electronic Structure and Chemical Bonding of La7Os4C9)

  • 강대복
    • 대한화학회지
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    • 제53권3호
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    • pp.266-271
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    • 2009
  • 고체 화합물 La7Os4C9 속에 있는 [Os4C9]21‑ 사슬의 전자구조와 화학결합을 extended Hückel 계산 결과에 의해서 논의하였다. 탄소 원자는 물론 (C2)2‑ 분자의 결합 특성은 비교적 큰 Os-C 상호작용을 나 타내었고 특히 (C2)2‑ 분자의 결합길이 증가는 Fermi level 바로 아래에 Os-C2(1 πg) 결합 밴드의 존재로 인 해서 반결합 1πg 오비탈에 부분적인 전자점유가 일어나기 때문인 것으로 해석된다.

준이차원 전하밀도파 CeTe2의 각분해 광전자 분광 연구 (ARPES Study of Quasi-Two Dimensional CDW System CeTe2)

  • 김대현;이현진;강정수;김형도;민병훈;권용성;김준원;민병일
    • 한국자기학회지
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    • 제20권5호
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    • pp.173-177
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    • 2010
  • 이 연구에서는 각분해 광전자 분광법(angle-resolved photoemission spectroscopy: ARPES)을 시용하여 전하밀도파(chargedensity-wave: CDW)를 형성하는 물질인 $CeTe_2$의 전자구조를 연구하였다. $CeTe_2$의 ARPES 데이터에서는 분산적인 띠들이 분명하게 관찰되었다. $CeTe_2$의 일정에너지(constant energy: CE) 맵에서는 4중 대칭성(fourfold symmetry)이 관찰되었으며, 그 형태가 문헌에 있는 $CeTe_2$의 CE 맵과 유사하였다. 이러한 발견은 $CeTe_2$의 CDW 형성이 $2{\times}2$ 형태의 살창 변형에 의한 것임과 4f 전자들이 $CeTe_2$의 CDW 형성에 별다른 기여를 하지 않는다는 것을 나타낸다. 이 연구로부터 $CeTe_2$에서 페르미 준위 근처의 전자들은 주로 Te(1) 5p와 Ce 5d 전자들이며 Te(1) 5p 전자들에 의한 띠가 CDW 형성에 기여하고 Ce 5d 전자들에 의한 띠는 CDW 상태에서도 페르미 준위를 가로지르는 금속성을 나타낸다는 것을 알 수 있었다.

Host effects on electrical conductivity of $ReO_3$ doped organic semiconductors

  • Lee, Jae-Hyun;Leem, Dong-Seok;Kim, Jang-Joo
    • 한국정보디스플레이학회:학술대회논문집
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    • 한국정보디스플레이학회 2009년도 9th International Meeting on Information Display
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    • pp.346-349
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    • 2009
  • We investigated the doping effects of $ReO_3$ in different p-type organic semiconductors on the formation of charge transfer complexes and the electrical conductivity by comparing the absorption in ultraviolet-visible-nearinfrared (UV-Vis-NIR) and the current density-voltage characteristics of the hole only devices, respectively. The large energy difference between the HOMO level of host and Fermi energy level of dopant (${\Delta}E$=$E_{HOHO,host}$ - $E_{F,dopant}$) gives higher concentration of CT complexes and enhanced conductivity.

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Charge Transfer Mechanism of Electrically Bistable Switching Devices based on Polyimide

  • 이경재;임규욱;김동민;이문호;강태희;정석민
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2009년도 제38회 동계학술대회 초록집
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    • pp.374-374
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    • 2010
  • Charge transfer mechanism of poly(4,4'-aminotriphenylene hexafluoroisopropylidenediphthalimide) (TP6F PI) which exhibits bistable ON and OFF switching has been studied using photoemission electron spectroscopy (PES) and near-edge x-ray absorption fine structure (NEXAFS). Here, we demonstrate novel set-up in which holes are injected by photoemission process instead of direct charge carrier injection via metal electrode. The accumulated charges on the PI surface in the OFF state abruptly flow across the PI film when the bias voltage of a back electrode reaches a specific value, indicating that the film is changed to the ON state. Core level and x-ray absorption spectra probed at charge injection region via photoemission process do not show any evidences implying structural modification of TP6F PI during the phase change. Whereas, in valence band spectra, the highest occupied molecular orbital (HOMO) is shifted toward Fermi level, responsible for improved hole-mobility of TP6F PI of ON state.

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In Situ Spectroscopy in Condensed Matter Physics

  • Noh, Tae Won
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
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    • pp.92-92
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    • 2014
  • Recently, many state-of-art spectroscopy techniques are used to unravel the mysteries of condensed matters. And numerous heterostructures have provided a new avenue to search for new emergent phenomena. Especially, near the interface, various forms of symmetry-breaking can appear, which induces many novel phenomena. Although these intriguing phenomena can be emerged at the interface, by using conventional measurement techniques, the experimental investigations have been limited due to the buried nature of interface. One of the ways to overcome this limitation is in situ investigation of the layer-by-layer evolution of the electronic structure with increasing of the thickness. Namely, with very thin layer, we can measure the electronic structure strongly affected by the interface effect, but with thick layer, the bulk property becomes strong. Angle-resolved photoemission spectroscopy (ARPES) is powerful tool to directly obtain electronic structure, and it is very surface sensitive. Thus, the layer-by-layer evolution of the electronic structure in oxide heterostructure can be investigated by using in situ ARPES. LaNiO3 (LNO) heterostructures have recently attracted much attention due to theoretical predictions for many intriguing quantum phenomena. The theories suggest that, by tuning external parameters such as misfit strain and dimensionality in LNO heterostructure, the latent orders, which is absent in bulk, including charge disproportionation, spin-density-wave order and Mott insulator, could be emerged in LNO heterostructure. Here, we performed in situ ARPES studies on LNO films with varying the misfit strain and thickness. (1) By using LaAlO3 (-1.3%), NdGaO3 (+0.3%), and SrTiO3 (+1.7%) substrates, we could obtain LNO films under compressive strain, nearly strain-free, and tensile strain, respectively. As strain state changes from compressive to tensile, the Ni eg bands are rearranged and cross the Fermi level, which induces a change of Fermi surface (FS) topology. Additionally, two different FS superstructures are observed depending on strain states, which are attributed to signatures of latent charge and spin orderings in LNO films. (2) We also deposited LNO ultrathin films under tensile strain with thickness between 1 and 10 unit-cells. We found that the Fermi surface nesting effect becomes strong in two-dimensions and significantly enhances spin-density-wave order. The further details are discussed more in presentation. This work was collaborated with Hyang Keun Yoo, Seung Ill Hyun, Eli Rotenberg, Ji Hoon Shim, Young Jun Chang and Hyeong-Do Kim.

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Hydrazine Doped Graphene and Its Stability

  • Song, MinHo;Shin, Somyeong;Kim, Taekwang;Du, Hyewon;Koo, Hyungjun;Kim, Nayoung;Lee, Eunkyu;Cho, Seungmin;Seo, Sunae
    • Applied Science and Convergence Technology
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    • 제23권4호
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    • pp.192-199
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    • 2014
  • The electronic property of graphene was investigated by hydrazine treatment. Hydrazine ($N_2H_4$) highly increases electron concentrations and up-shifts Fermi level of graphene based on significant shift of Dirac point to the negative gate voltage. We have observed contact resistance and channel length dependent mobility of graphene in the back-gated device after hydrazine monohydrate treatment and continuously monitored electrical characteristics under Nitrogen or air exposure. The contact resistance increases with hydrazine-treated and subsequent Nitrogen-exposed devices and reduces down in successive Air-exposed device to the similar level of pristine one. The channel conductance curve as a function of gate voltage in hole conduction regime keeps analogous value and shape even after Nitrogen/Air exposure specially whereas, in electron conduction regime change rate of conductance along with the level of conductance with gate voltage are decreased. Hydrazine could be utilized as the highly effective donor without degradation of mobility but the stability issue to be solved for future application.

Insertion of an Organic Hole Injection Layer for Inverted Organic Light-Emitting Devices

  • 박순미;김윤학;이연진;김정원
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2009년도 제38회 동계학술대회 초록집
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    • pp.379-379
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    • 2010
  • Recent technical advances in OLEDs (organic light emitting devices) requires more and more the improvement in low operation voltage, long lifetime, and high luminance efficiency. Inverted top emission OLEDs (ITOLED) appeared to overcome these problems. This evolved to operate better luminance efficiency from conventional OLEDs. First, it has large open area so to be brighter than conventional OLEDs. Also easy integration is possible with Si-based driving circuits for active matrix OLED. But, a proper buffer layer for carrier injection is needed in order to get a good performance. The buffer layer protects underlying organic materials against destructive particles during the electrode deposition and improves their charge transport efficiency by reducing the charge injection barrier. Hexaazatriphenylene-hexacarbonitrile (HAT-CN), a discoid organic molecule, has been used successfully in tandem OLEDs due to its high workfunction more than 6.1 eV. And it has the lowest unoccupied molecular orbital (LUMO) level near to Fermi level. So it plays like a strong electron acceptor. In this experiment, we measured energy level alignment and hole current density on inverted OLED structures for hole injection. The normal film structure of Al/NPB/ITO showed bad characteristics while the HAT-CN insertion between Al and NPB greatly improved hole current density. The behavior can be explained by charge generation at the HAT-CN/NPB interface and gap state formation at Al/HAT-CN interface, respectively. This result indicates that a proper organic buffer layer can be successfully utilized to enhance hole injection efficiency even with low work function Al anode.

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Electrical properties of (Na0.5Bi0.5)(Zr0.75Ti0.25)O3 ceramic

  • Lily, Lily;Yadav, K.L.;Prasad, K.
    • Advances in materials Research
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    • 제2권1호
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    • pp.1-13
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    • 2013
  • Lead-free compound $(Na_{0.5}Bi_{0.5})(Zr_{0.75}Ti_{0.25})O_3$ was prepared using conventional ceramic technique at $1070^{\circ}C$/4h in air atmosphere. X-ray diffraction analysis showed the formation of single-phase orthorhombic structure. Permittivity data showed low temperature coefficient of capacitance ($T_{CC}{\approx}5%$) up to $100^{\circ}C$. Complex impedance studies indicated the presence of grain boundary effect, non-Debye type dielectric relaxation and evidences of a negative temperature coefficient of resistance. The ac conductivity data were used to evaluate the density of states at Fermi level and apparent activation energy of the compound.