• Current Optics and Photonics
• /
• 제7권6호
• /
• pp.738-744
• /
• 2023

Graphene-based saturable absorbers (SAs) are widely used as laser mode-lockers at various laser oscillators. In particular, transmission-type graphene-SAs with ultrabroad spectral coverage are typically manufactured on transparent substrates with low nonlinearity to minimize the effects on the oscillators. Here, we developed two types of transmitting graphene SAs based on CaF₂ and ZnSe. Using the graphene-SA based on CaF₂, a passively mode-locked mid-infrared Cr:ZnS laser delivers relatively long 540 fs pulses with a maximum output power of up to 760 mW. In the negative net cavity dispersion regime, the pulse width was not reduced further by inhomogeneous group delay dispersion (GDD) compensation. In the same laser cavity, we replaced only the graphene-SA based on CaF₂ with the SA based on ZnSe. Due to the additional self-phase modulation effect induced by the ZnSe substrate with high nonlinearity, the stably mode-locked Cr:ZnS laser produced Fourier transform-limited ~130 fs near 2,340 nm. In the stable single-pulse operation regime, average output powers up to 635 mW at 234 MHz repetition rates were achieved. To our knowledge, this is the first attempt to achieve shorter pulse widths from a polycrystalline Cr:ZnS laser by utilizing the graphene deposited on the substrate with high nonlinearity.

• 한국광학회지
• /
• 제17권1호
• /
• pp.75-80
• /
• 2006

펨토초 레이저 펄스에 의한 포토폴리머의 투과율 변화와 Eu 이온과 Sm 이온이 첨가된 sodium borate 유리의 형광파장의 변화를 이용하여 3차원 광메모리 가능성을 연구하였다. 780 nm의 모드잠금 타이사파이어 레이저를 이용하여 이광자흡수에 의해 DuPont 포토폴리머에서는 투과율을 변화시켰으며 이로 인해 $0.6{\mu}m$ 크기의 비트를 형성하였다. Sm 이온이 첨가된 재료에서는 이광자흡수로 인한 Sm 이온의 광환원을 이용하여 $4{\mu}m$ 크기의 형광 비트를 얻을 수 있었고 다층구조에서의 비트 형성을 시도하였다.

• 한국광학회지
• /
• 제16권6호
• /
• pp.490-493
• /
• 2005

본 논문은 광자 결정 광섬유에서 100 fs의 펄스 폭을 갖는 펌프 광원의 파장과 입력파워에 따른 초 광대역 광원 생성에 대해 실험적으로 연구하였다. 적절한 파라미터들을 조절함으로써 광 스펙트럼 진폭의 균일함이 10 dB 이내에서 약 750 nm의 스펙트럼 폭을 갖는 초 광대역 광원을 얻어냈다. 사용한 광자 결정 광섬유의 길이는 2 m였고, 펌프광원으로는 모드 록킹된 Ti:Sapphire laser를 사용하였다. 또한, 펌프 광원의 여러 가지 변수들을 바꿔줌으로써 초 광대역 광원의 다양한 스펙트럼 현상을 조절할 수 있었다.

• 한국신재생에너지학회:학술대회논문집
• /
• 한국신재생에너지학회 2010년도 춘계학술대회 초록집
• /
• pp.59.1-59.1
• /
• 2010

Aluminum-induced crystallization (AIC) of amorphous silicon (a-Si) is studied with the structure of a glass/Al/$SiO_2$/a-Si, in which the $SiO_2$ layer has micron-sized laser holes in the stack. An oxide layer between aluminum and a-Si thin films plays a significant role in the metal-induced crystallization (MIC) process determining the properties such as grain size and preferential orientation. In our case, the crystallization of a-Si is carried out only through the key hole because the $SiO_2$ layer is substantially thick enough to prevent a-Si from contacting aluminum. The crystal growth is successfully realized toward the only vertical direction, resulting a crystalline silicon grain with a size of $3{\sim}4{\mu}m$ under the hole. Lateral growth seems to be not occurred. For the AIC experiment, the glass/Al/$SiO_2$/a-Si stacks were prepared where an Al layer was deposited on glass substrate by DC sputter, $SiO_2$ and a-Si films by PECVD method, respectively. Prior to the a-Si deposition, a $30{\times}30$ micron-sized hole array with a diameter of $1{\sim}2{\mu}m$ was fabricated utilizing the femtosecond laser pulses to induce the AIC process through the key holes and the prepared workpieces were annealed in a thermal chamber for 2 hours. After heat treatment, the surface morphology, grain size, and crystal orientation of the polycrystalline silicon (pc-Si) film were evaluated by scanning electron microscope, transmission electron microscope, and energy dispersive spectrometer. In conclusion, we observed that the vertical crystal growth was occurred in the case of the crystallization of a-Si with aluminum by the MIC process in a small area. The pc-Si grain grew under the key hole up to a size of $3{\sim}4{\mu}m$ with the workpiece.

• 한국광학회지
• /
• 제18권5호
• /
• pp.345-350
• /
• 2007

광결정 광섬유에서 생성되는 초 연속스펙트럼의 특성을 일반화된 비선형 슈뢰딩거 방정식과 split step 퓨리에 방법을 이용하여 전산모사 하였다. 그 결과를 바탕으로 200 fs 펄스폭을 갖는 Ti:sapphire 레이저와 광결정 광섬유를 이용하여 650nm부터 900nm에 이르는 파장영역에서 ${\pm}4dB$ 이하의 평탄도를 가지는 초 연속스펙트럼을 실험적으로 생성하였다.