• Design & Manufacturing
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• v.17 no.2
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• pp.55-61
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• 2023

With femtosecond (fs) laser pulse irradiation on metals, various types of nano- and micro-scale structures can be naturally induced at the surface through laser-matter interaction. Two notable structures are laser-induced periodic surface structures (LIPSSs) and cone/spike structures, which are known to significantly modify the optical and physical properties of metal surfaces. In this work, we irradiate fs laser pulses onto various types of metals, cold-rolled steel, pickled & oiled steel, Fe-18Cr-8Ni alloy, Zn-Mg-Al alloy coated steel, and pure Cu which can be useful for precise molding and imprinting processes, and adjust the morphological profiles of LIPSSs and cone/spike structures for clear structural coloration and a larger range of surface wettability control, respectively, by changing the fluence of laser and the speed of raster scan. The periods of LIPSSs on metals used in our experiments are nearly independent of laser fluence. Accordingly, the structural coloration of the surface with LIPSSs can be optimized with the morphological profile of LIPSSs, controlled only by the speed of the raster scan once the laser fluence is determined for each metal sample. However, different from LIPSSs, we demonstrate that the morphological profiles of the cone/spike structures, including their size, shape, and density, can be manipulated with both the laser fluence and the raster scan speed to increase a change in the contact angle. By injection molding and imprinting processes, it is expected that fs laser-induced surface structures on metals can be replicated to the plastic surfaces and potentially beneficial to control the optical and wetting properties of the surface of injection molded and imprinted products.

• Journal of the Optical Society of Korea
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• v.13 no.1
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• pp.53-59
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• 2009

A chirped-pulse amplification Ti:sapphire laser system has been designed using a 10-Hz 100-TW Ti:sapphire laser to generate 0.1-Hz 0.5-PW laser pulses and optimize their temporal qualities such as temporal contrast and pulse duration. A high-energy booster amplifier to be added is expected to produce an energy above 30 J through the parasitic lasing suppression and the efficient amplification. To improve the temporal contrast of the laser pulses, a high-contrast 1-kHz amplifier system is used as a front-end. A grating stretcher which makes the laser pulse have 1-ns duration is used to prevent optical damages due to high pulse energy during amplification. A grating compressor has been designed with group delay analysis to obtain the recompressed pulse duration close to the transform-limited pulse duration. The final laser pulses are expected to have energy above 20 J and duration below 40 fs.

• Transactions of the Korean Society of Mechanical Engineers B
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• v.26 no.10
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• pp.1427-1435
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• 2002

The main aim of the present article is numerically to investigate the micro-scale heat transfer phenomena in a silicon microstructure irradiated by picosecond-to-femtosecond ultra-short laser pulses. Carrier-lattice non-equilibrium phenomena are simulated with a self-consistent numerical model based on Boltzmann transport theory to obtain the spatial and temporal evolutions of the lattice temperature, the carrier number density and its temperature. Especially, an equilibration time, after which carrier and lattice are in equilibrium, is newly introduced to quantify the time duration of non-equilibrium state. Significant increase in carrier temperature is observed for a few picosecond pulse laser, while the lattice temperature rise is relatively small with decreasing laser pulse width. It is also found that the laser fluence significantly affects the N 3 decaying rate of Auger recombination, the carrier temperature exhibits two peaks as a function of time due to Auger heating as well as direct laser heating of the carriers, and finally both laser fluence and pulse width play an important role in controlling the duration time of non-equilibrium between carrier and lattice.

• Laser Solutions
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• v.17 no.4
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• pp.7-13
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• 2014

In this work, the application of laser induced breakdown spectroscopy (LIBS) for the composition analysis of thin $Cu(In,Ga)Se_2$ (CIGS) solar cell films ($1-2{\mu}m$ thickness) is reported. For the ablation of CIGS films, femtosecond (fs) laser (wavelength = 343nm, pulse width = 500fs) and nanosecond (ns) laser (wavelength = 266nm, pulse width = 5ns) were used under atmospheric environment. The emission spectra were detected with an intensified charge coupled device (ICCD) spectrometer and multichannel CCD spectrometer for fs-LIBS and ns-LIBS, respectively. The calibration curves for fs-LIBS and ns-LIBS intensity ratios of Ga/Cu, In/Cu, and Ga/In were generated with respect to the concentration ratios measured by inductively coupled plasma optical emission spectrometry (ICP-OES).

• Korean Journal of Optics and Photonics
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• v.17 no.2
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• pp.203-206
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• 2006

Femtosecond laser-induced nano-patterning of an Al surface coated on a slide glass is reported in this paper. It was found that the period of the laser-induced nano-patterning was much dependent on the incident laser power and pulse number. Through finely adjusting the laser power and pulse number, uniform nano-patterns could be formed on the Al surface. It is based on the interference of the incident laser beam with some form of a surface scatted electromagnetic wave. It was also found that an Al oxide layer played an important role in forming the nano-patterning on the Al surface.

• Current Optics and Photonics
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• v.6 no.4
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• pp.407-412
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• 2022

We report on a diode-laser-pumped mode-locked Yb:KGW laser system, which delivers ultrashort pulses down to 89 fs at a repetition rate of 63 MHz, with an average power of up to 5.6 W. A fiber-coupled diode laser at 981 nm, operated with a compact driver, is used to optically pump the gain crystal via an off-axis parabolic mirror. A semiconductor saturable-absorber mirror is used to initiate the pulsed operation. Laser characteristics such as the pulse duration, spectrum bandwidth, and output power are investigated by varying the intracavity dispersions via changing the number of bounces between negative-dispersive mirrors within the cavity. Short pulses with a duration of 89 fs, a center wavelength of 1,027 nm, and 3.6 W of output power are produced at a group-velocity dispersion (GVD) of -3,300 fs². As the negative GVD increases, the pulse duration lengthens but the output power at the single-pulse condition can be enhanced, reaching 5.6 W at a GVD of -6,600 fs². Because of pulse broadening at high negative GVDs, the highest peak intensity is achievable at a moderate GVD with our system.

• Korean Journal of Optics and Photonics
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• v.17 no.6
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• pp.556-563
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• 2006

We present a comprehensive study of a chirped pulse Ti:sapphire regenerative amplifier system operating at 1 kHz. Main constituents of the system are described in detail. The amplifier stage was first converted to a repetition rate-tunable kHz gain-switched nanosecond Ti:sapphire laser. Operation characteristics at different repetition rates such as build-up times of laser pulses, pump power-dependent output powers and pulse durations, damage thresholds, and tunability ranges were studied. Based on the results achieved, the switching time of the Pocket's cell used and the round trip numbers in the regenerative amplifier were optimized at 1 kHz. The output pulses with a pulse width of 50fs from a home-made Ken lens mode-locked Ti:sapphire oscillator were used as seed pulses. The pulses were expanded to 120ps in a grating stretcher prior to coupling into the 3-mirror amplifier cavity. After amplification and recompression, a stable 1kHz Ti:sapphire regenerative amplifier system, which delivers 85-fs, $320-{\mu}J$ pulses, was fully constructed.

• Journal of the Optical Society of Korea
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• v.12 no.1
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• pp.57-61
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• 2008

We investigated the laser pulse-width dependence of dense plasmas confined within the magnetic length of $In_{0.2}Ga_{0.8}As$/GaAs multiple quantum wells under high magnetic fields up to 31 T. To fully fill the Landau levels of effectively zero-dimensional system, we used intense femtosecond (fs) laser pulses to create carrier densities near $10^{13}/cm^2$. The observed photoluminescence showed a characteristic of superfluorescence, above critical magnetic field when being excited by pulses shorter than coherence buildup time.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.54 no.6
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• pp.286-292
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• 2005

Terahertz wave is a kind of electromagnetic radiation whose frequency lies in 0.1THz $\~$10THz range. In this paper, generation and detection characteristics of terahertz (THz) radiation by photoconductive antenna (PCA) method has been described. Using modern integrated circuit techniques, micron-sized dipole antenna has been fabricated on a low-temperature grown GaAs (LT-GaAs) wafer. A mode-locked Ti:Sapphire femtosecond laser beam is guided and focused onto photoconductive antennas (emitter and detector) to generate and measure THz pulses. Ultra-wide band THz radiation with frequencies between 0.1 THz and 3 THz was observed. Terahertz field amplitude variation with antenna bias voltage, pump laser power, pump laser wavelength and probe laser power was investigated. As a primary application example. a live clover leaf was imaged with the terahertz radiation.

• Journal of the Korean Ceramic Society
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• v.42 no.6 s.277
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• pp.377-383
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• 2005

Generally, the strength achieved of glass-ceramics is higher as is the fracture toughness, as compared with the original glass. This improvement is due to the microstructure consisting of very small crystals. In this study, Ag-doped $45SiO_2-24CaO-24Na_2O-4P_2O_5$ glasses were irradiated to strengthen by the crystallization using Femto second laser Pulses. Through the UV/VIS spectroscope, XRD, Nano-indenter and SEM etc., heat-treated and irradiation of laser pulses without heat-treated samples were analyzed. Two kinds of samples, heat-treated and laser irradiated without heat-treated samples, showed the peaks in the same wavelength near 360 nm. Especially, samples irradiated by 140 mW laser with XYZ stage having at the rate of 100$\~$l000 $\mu$m/s had the largest absorption peak among them, and heat-treated samples was shown lower absorption range than over 90 mW laser irradiated samples. Moreover, samples irradiated by laser had higher values ($4.4\~4.56{\times}10^{-3}(Pa)$) of elastic modulus which related with strength of glass than values of heat-treated samples and these are 1.2$\~$1 .5 times higher values than them of mother glass.