• Journal of the Korean Magnetics Society
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• v.17 no.2
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• pp.76-80
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• 2007

Three nano-sized Fe-N particle samples synthesized by Chemical Vapor Condensation (CVC) were analyzed using $M\"{o}ssbauer$ spectroscopy, XRD and BET. The synthesized nanoparticles consisted of ${\epsilon}-Fe_{2.12}N,\;{\gamma}'-Fe_4N,\;{\alpha}-Fe\;and\;{\gamma}-Fe.\;{\gamma}'-Fe_4N$ was mainly formed at the low decomposition temperature. With increasing decomposition temperature, the phase was changed to ${\gamma}-Fe$ via ${\epsilon}-Fe_{2.12}N$. For synthesizing Fe-N phases, this study implies that the low decomposition temperature is better than high temperature during Chemical Vapor Condensation.

• Progress in Superconductivity and Cryogenics
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• v.19 no.3
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• pp.23-26
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• 2017

We have studied magnetic and transport properties of NbN/FeN/Cu/FeN/FeMn spin-valve structure. In-plane magnetic moment exhibited typical hysteresis loops of spin valves in the normal state of NbN film at 20 K. On the other hand, the magnetic hysteresis loop in the superconducting state exhibited more complex behavior in which exchange bias provided by antiferrmagnetic FeMn layer to adjacent FeN layer was disturbed by superconductivity. Because of this, the ideal superconducting spin-valve effect was not detected. Instead the stray field originated from unsaturated magnetic states dominated the transport properties of NbN/FeN/Cu/FeN/FeMn multilayer.

• Progress in Superconductivity and Cryogenics
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• v.18 no.1
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• pp.33-36
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• 2016

Suppression of the superconducting transition temperature ($T_c$) of NbN thin films in superconductor/ferromagnet multilayers has been investigated. Both superconducting NbN and ferromagnetic FeN layers were deposited on thermally oxidized Si substrate at room temperature by using reactive magnetron sputtering in an $Ar-N_2$ gas mixture. The thickness of FeN films was fixed at 20 nm, while the thickness of NbN films was varied from 3 nm to 90 nm. $T_c$ suppression was clearly observed in NbN layers up to 70 nm thickness when NbN layer was in proximity with FeN layer. For a given thickness of NbN layer, the magnitude of $T_c$ suppression was increased in the order of Si/FeN/NbN, Si/NbN/FeN, and Si/FeN/NbN/FeN structure. This result can be used to design a spin switch whose operation is based on the proximity effect between superconducting and ferromagnetic layers.

• Journal of the Korean Magnetics Society
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• v.10 no.5
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• pp.210-219
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• 2000

The magnetoresistance characteristics of FeN/Co/Cu/Co and FeN/Co/Cu/Co/Cu/Co/FeN multilayers using ferromagnetic iron-nitrides (FeN) has been studied. The microstructure of FeN film is the mixed ${\alpha}$-Fe and $\varepsilon$-Fe$_3$N phase on the condition that the flow rate of N$_2$ gas is over 0.4 sccm. The magnetoresistance effect is observed because of shape magnetic anisotropy induced by needle-shaped $\varepsilon$-Fe$_3$N phase. This magnetoresistance effect changes, because the degree that the shape magnetic anisotropy adheres to the adjacent Co pinned layer is varied according to the flow rate of N$_2$ gas and the thickness of FeN film. The best magnetoresistance effect is obtained on the condition that the thickness of Co free layer is 70 ${\AA}$ and the maximum MR ratio(%) value of 3.2% shows in the FeN(250 ${\AA}$)/Co(70 ${\AA}$)/Cu(25 ${\AA}$)/Co(70 ${\AA}$)/Cu(25 ${\AA}$)/Co(70 ${\AA}$)/FeN(250 ${\AA}$) mutilayer film which is fabricated at the N, gas flow rate of 0.5 sccm and the FeN film thickness of 250 ${\AA}$. Four steps are observed in the magnetoresistance curve owing to this difference of coercive force, because respective magnetic layers in the multilayer possess different coercive forces. These effects observed in these mutilayer films can be expected to application to the memory device the same MRAM as can carry out simultaneously four signals.

• Journal of the Korean Chemical Society
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• v.28 no.6
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• pp.384-392
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• 1984

Reaction of the Fe(II) complex of a fully saturated tetradentate macrocyclic ligand [Fe([14]aneN$_4)(CH_3CN)_2]^{2+}$, where [14]ane$N_4$ represents 1,4,8,11-tetraazacyclotetradecane, with $O_2$ has been investigated in acetonitrile solutions. [Fe([14]aneN$_4)(CH_3CN)_2]^{2+}$ reacts with oxygen to yield low spin Fe(III) species, [Fe([14]aneN$_4)(CH_3CN)_2]^{3+}$, which undergoes metal ion assisted oxidative dehydrogenation of the macrocyclic ligand to produce low spin Fe(II) complex, [Fe([14]tetraeneN$_4)(CH_3CN)_2]^{2+}$. The macrocyclic ligand in [Fe([14]tetraeneN$_4)(CH_3CN)_2]^{2+}$ is highly unsaturated and its double bonds are conjugated. [Fe([14]dieneN$_4)(CH_3CN)_2]^{2+}$ and [Fe([14]dieneN$_4)(CH_3CN)_2]^{3+}$ are isolated as the intermediates of the reaction. The Fe(II) complexes involved in this oxidative dehydrogenation reaction react with carbon monoxide to give respective carbon monoxide derivatives, [FeL$(CH_3CN)(CO)]^{2+}$ (where L = macrocyclic ligand). The values of $v_{CO}$ of [FeL$(CH_3CN)(CO)]^{2+}$, and the electrochemical oxidation potentials of Fe(II) ${\to}$ Fe(III) and the qualitative stability toward air-oxidation for [FeL(CH$_3CN_2)^{2+}$ increase as the degree of unsaturation of the macrocyclic ligands increase.

• Progress in Superconductivity and Cryogenics
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• v.18 no.2
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• pp.5-7
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• 2016

We present an experimental investigation of the superconducting transition temperatures, $T_c$, of superconductor/ferromagnet bilayers with varying the thickness of ferromagnetic layer. FeN was used for the ferromagnetic (F) layer, and NbN and Nb were used for the superconducting (S) layer. The results were obtained using three different-thickness series of the S layer of the S/F bilayers: NbN/FeN with NbN thickness, $d_{NbN}{\approx}9.3nm$ and $d_{NbN}{\approx}10nm$, and Nb/FeN with Nb thickness $d_{Nb}{\approx}15nm$. $T_c$ drops sharply with increasing thickness of the ferromagnetic layer, $d_{FeN}$, before maximal suppression of superconductivity at $d_{FeN}{\approx}6.3nm$ for $d_{NbN}{\approx}10nm$ and at $d_{FeN}{\approx}2.5nm$ for $d_{Nb}{\approx}15nm$, respectively. After shallow minimum of $T_c$, a weak $T_c$ oscillation was observed in NbN/FeN bilayers, but it was hardly observable in Nb/FeN bilayers.

• Journal of the Korean Magnetics Society
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• v.8 no.3
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• pp.138-143
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• 1998

We have investigated the magnetic properties of FeBN and FeSiN films deposited by RF magnetron reactive sputtering system. It was investigated that the compositions of B, Si and N were the main factors influencing the soft magnetic properties and film resistivity. The addition of small amount of N significantly improve the soft magnetic properties and electrical resistivity. The FeBN and FeSiN films were showed good soft magnetic properties which were Hc<1 Oe, Bs:19~19 kG and $\mu$'>1000 values. The composition of films were $Fe_{75}(BN)_{25},\;Fe_{78}(SiN)_{22}$ and resistivity was 100~120 $\mu$$\Omega$-cm. but, futher increase in B, Si and N concentration degraded the soft magnetic properties due to formation of nitride such as $Fe_4N$ compound.

• Journal of the Korean Magnetics Society
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• v.5 no.5
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• pp.874-879
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• 1995

Magnetic properties of FeMoN, FeMoTaN, FeTaN and FeTaC films deposited by DC magnetron reactive sputter were investigated, and correlated with their microstructure. FeMoN films were not showen the soft magnetic prop¬erties, because of generated $Fe_{2}Mo$, $Fe_{3-2}N$ and $Fe_{4}N$ phases. Ta added films, however, effectivly retarded the $\alpha$-Fe grain growth and suppressed the generation of Fe nitrides or carbides during heat treatement. The soft magnetic properties of $B_{s}:15\;kG,\;H_{e}:0.25\;Oe,\;\mu':4000(at\;5\;MHz),\;and\;B_s:14.5\;kG,\;He:0.25\;Oe,\;\mu':2700(5MHz)$ were observed in $Fe_{78.8} Ta_{8.5}N_{12.7}\;and\;Fe{75.6}Ta_{8.1}C_{16.3}$ films, respectively.

• Journal of the Korean Magnetics Society
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• v.8 no.1
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• pp.6-12
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• 1998

Fe-N(iron-nitrogen) crystal phases were prepared by nitrogen ion implantation into $\alpha$-Fe foil with Plasma Source Ion Implantation (PSII). Ion implantation time of sample is treated 15 minutes(FeN15) and 30 minutes (FeN30). The nitrogen depth profiles measured by Auger electron spectroscopy (AES) were determined to be about 12000 $\AA$ and 4000 $\AA$ for the samples of FeN15 and FeN30, respectively. The results of vibrating sample magnetometer (VSM) show that the saturation magnetization of the samples of as-implanted FeN15 and FeN30 was higher than that of pure $\alpha$-Fe foil, which may be owing to $\alpha$'-$Fe_8N$ or $\alpha$"-$Fe_{16}N_2$ phases. Accordingly this study shows the possibility of the partial formation of $\alpha$' or $\alpha$" phase in iron nitrogen produced by PSII method.II method.

• Journal of the Korean Magnetics Society
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• v.13 no.1
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• pp.6-14
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• 2003

The purpose of this study is to investigate the effect of chemical reaction with a bonding glass on physical and magnetic properties of Fe-Hf-N/SiO$_2$ and Fe-Hf-N/Cr/SiO$_2$ thin films. When the Fe-Hf-N/SiO$_2$ films were reacted with the bonding glass, the soft magnetic properties of them were extremely degraded. At $600^{\circ}C$, the saturation magnetization of the reacted film decreased to 1 kG, and its coercivity increased to 27 Oe, and its effective permeability decreased to 70. It was found that the degradation of soft magnetic properties of the Fe-Hf-N/SiO$_2$ films reacted with the bonding glass were attributed to the oxidation of the Fe-Hf-N layers to HfO$_2$ and Fe$_3$O$_4$. The soft magnetic properties of the Fe-Hf-N/Cr/SiO$_2$ films reacted with the bonding glass were degraded less than those of Fe-Hf-N/SiO$_2$ films. At $600^{\circ}C$, the saturation magnetization of the reacted film decreased to 13.5 kG, and its coercivity increased to 4 Oe, and its effective permeability decreased to 700. It was found that the Cr layer suppressed the oxidation of the Fe-Hf-N layers during the chemical reaction between the Fe-Hf-N layer and bonding glass.