• Journal of the Institute of Electronics Engineers of Korea TC
• /
• v.47 no.12
• /
• pp.84-89
• /
• 2010

In this paper, a novel voltage-controlled oscillator (VCO) using the microstrip square open loop dual split ring resonator is presented for reducing the phase noise. The square-shaped dual split ring resonator having the form of the microstrip square open loop is investigated to reduce the phase noise. Compared with the microstrip square open loop resonator and the microstrip square open loop split ring resonator as well as the conventional microstrip line resonator, the microstrip square dual split ring resonator has the larger coupling coefficient value, which makes a higher Q value, and has reduced the phase noise of VCO. The VCO with 1.7V power supply has the phase noise of -123.2~-122.0 dBc/Hz @ 100 kHz in the tuning range, 11.74~11.75 GHz. The figure of merit (FOM) of this VCO is-214.8~-221.7 dBc/Hz dBc/Hz @ 100 kHz in the same tuning range. Compared with VCO using the conventional microstrip line resonator, VCO using microstrip square open loop resonator, the phase noise of VCO using the proposed resonator has been improved in 26 dB, 10 dB, respectively.

• Journal of the Institute of Electronics Engineers of Korea TC
• /
• v.44 no.11
• /
• pp.60-66
• /
• 2007

In this paper, a novel voltage-controlled oscillator (VCO) using the microstrip square open loop multiple split ring resonator (OLMSRR) is presented for reducing the phase noise property. The square-shaped multiple split ring resonator (MSRR) having the form of the microstrip square open loop is investigated to realize this property. Compared with the microstrip square open loop resonator and the microstrip square open loop split ring resonator (OLSRR) as well as the conventional microstrip line resonator, the microstrip square OLMSRR has the larger coupling coefficient value, which makes a higher Q value, and has reduced the phase noise of VCO. The VCO with 1.7V power suppIy has the phase noise of $-124.5\;{\sim}\;-122.0\;dBc/Hz$ @ 100 kHz in the tuning range, $5.746\;{\sim}\;5.84\;GHz$. The figure of merit (FOM) of this VCO is $-203.96\;{\sim}\;-201.6\;dBc/Hz$ @ 100 kHz in the same tuning range. Compared with VCO using the conventional microstrip line resonator, VCO using the microstrip square open loop resonator and VCO using microstrip square OLSRR, the phase noise property of VCO using the proposed resonator has been improved in 25.66 dB, 8.34 dB, and 4.5 dB, respectively.

• The Journal of The Korea Institute of Intelligent Transport Systems
• /
• v.7 no.6
• /
• pp.63-69
• /
• 2008

Reconfigurable RF one-chip solutions have been researched with the objective of designing for smaller-sized and more economical RF transceiver and it can be applied to a vehicular wireless terminal. The proposed voltage-controlled oscillator satisfies the targeted frequency range ($4.2{\sim}5.4\;GHz$) and the frequency planning which correspond to the standards such as CDMA(IS-95), PCS, GSM850, EGSM, WCDMA, WLAN, Bluetooth, WiBro, S-DMB, DSRC, GPS, and DVB-H/DMB-H/L(L Band). In order to improve phase noise performance, PMOS is adopted in the cross-coupled pair, the tail current source and MOS varactor in this VCO and differential-typed switching is proposed in capacitor array. Based on the measurement results, a total power dissipation is $5.3{\sim}6.0\;mW$ at 1.8 V power supply voltage. The oscillator is tuned from 4.05 to 5.62 GHz; The tuning range is 33%. The phase noise is -117.16 dBc/Hz at 1 MHz offset frequency and the FOM (Figure Of Merit) is $-180.84{\sim}-180.5$.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.31 no.4
• /
• pp.216-220
• /
• 2018

The piezoelectric properties of $0.65Pb(Zr_{1-x}Ti_x)O_3-0.35Pb(Zn_{1/6}Ni_{1/6}Nb_{2/3})O_3$ ($PZT_x-PZNN$) ceramics with $0.530{\leq}x{\leq}0.555$ were investigated for application to piezoelectric energy harvesters. Although a morphotropic phase boundary (MPB) was found at approximately x = 0.545, the ceramic with the highest figure of merit (FOM) ($d_{33}{\times}g_{33}$) was observed at a composition of x = 0.540. Values of this figure of merit, $d_{33}{\times}g_{33}$, of $19.6pm^2/N$ and $20.2pm^2/N$ were obtained from $PZT_{0.540}-PZNN$ ceramics sintered at $920^{\circ}C$ and $950^{\circ}C$, respectively. A high output power of $937{\mu}W$ and a high power density of $3.3mW/cm^3$ were obtained from unimorph-type piezoelectric energy harvesters fabricated using $PZT_{0.540}-PZNN$ ceramic sintered at $920^{\circ}C$ for 4h.

• Journal of the Korean Society for Heat Treatment
• /
• v.36 no.5
• /
• pp.298-302
• /
• 2023

Transparent and conducting tungsten (W) doped indium oxide (IWO) thin films were deposited on the glass substrate by using RF magnetron sputtering and then electron irradiation was conducted to investigate the effect of electron irradiation on the optical and electrical properties of the films. The electron irradiated films showed three x-ray diffraction peaks of the In₂O₃ (222), (431) and (046) planes and the full width at half maximum values are decreased as increased electron irradiation energy. In the atomic force microscope analysis, the surface roughness of as deposited films was 1.70 nm, while the films electron irradiated at 700 eV, show a lower roughness of 1.28 nm. In this study, the figure of merit (FOM) of as deposited films is 2.07 × 10^-3 Ω^-1, while the films electron irradiated at 700 eV show the higher FOM value of 5.53 × 10^-3 Ω^-1. Thus, it is concluded that the post-deposition electron beam irradiation is the one of effective methods to enhance optical and electrical performance of IWO thin films.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
• /
• v.18 no.8
• /
• pp.964-969
• /
• 2007

A regulated low phase noise differential colpitts VCO(Voltage Controlled Oscillator) for mobile RFID system is presented. The differential colpitts VCO meets the dense reader environment specifications. The VCO use a $0.35{\mu}m$ technology and achieves tuning range $1.55{sim}2.053 GHz$. Measuring 910 MHz frequency divider output, phase noise performance is -106 dBcMz and -135dBc/Hz at 40 kHz and 1MHz offset, respectively. 5-bit digital coarse-tuning and accumulation type MOS varactors allow for 28.2% tuning range, which is required to cover the LO frequency range of a UHF Mobile RFID system, Optimum design techniques ensure low VCO gain(<45 MHz/V) for good interoperability with the frequency synthesizer. To the author' knowledge, this differential colpitts VCO achieves a figure of merit(FOM) of 1.93dB at 2-GHz band.

• The Journal of the Institute of Internet, Broadcasting and Communication
• /
• v.16 no.6
• /
• pp.231-237
• /
• 2016

This paper presents a multiband low phase noise CMOS VCO with wide frequency tunability using switched bondwire inductor bank. The combination of bondwire inductor and CMOS switch transistor enhances frequency tunability and improves phase noise characteristics. The proposed multiband VCO operates from 2.3GHz to 6.3GHz with phase noise of -136dBc/Hz and -122dBc/Hz at 1 MHz offset frequency, respectively. Switched bondwire inductor bank shows high quality factor(Q) at each frequency band, which allows better tradeoff between phase noise and power consumption. The proposed VCO is designed in TSMC 0.18um CMOS process and consumes 7.2 mW power resulting in figure of merit(FOM) of -189.3dBc/Hz at 1 MHz offset from 6GHz carrier frequency.

• Journal of the Institute of Electronics Engineers of Korea TC
• /
• v.44 no.12
• /
• pp.22-27
• /
• 2007

In this paper, a novel voltage-controlled oscillator (VCO) using the microstrip square open loop split ring resonator (OLSRR) is presented for reducing the phase noise. For this purpose, the square-shaped split ring resonator (SRR) haying the form of the microstrip square open loop is investigated. Compared with the microstrip square open loop resonator, the microstrip square OLSRR has the larger coupling coefficient value, which makes a higher Q value, and has reduced the phase noise of VCO. The VCO with 1.7V power supply has the phase noise of $-120\sim-116.5$ dBc/Hz @ 100 kHz in the tuning range, $5.746\sim5.854$ GHz. The figure of merit (FOM) of this VCO is $-200.33\sim-197$ dBc/Hz @ 100 kHz in the same tuning range.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2004.07b
• /
• pp.776-779
• /
• 2004

The dielectric and electrical characteristics of Ce doped (Ba0.6Sr0.4)TiO3 (BST) thin films were investigated as a function of Ce content. Both atomic force microscopy (AFM) and x-ray diffraction (XRD) analysis showed that increasing the Ce doping ratio causes the decrease in grain size while the surface remains smooth and crack-free. The dielectric properties of the Ce doped BST films were found to be strongly dependent on the Ce contents. The dielectric constant and dielectric loss of the BST films decreased with increasing Ce content. However, it was also found that, compared with undoped films, the increase of Cecontent improves the leakage-current characteristics. The improvement of the electrical properties of Ce-doped BST films may be related to the decrease in the concentration of oxygen vacancies. The figure of merit (FOM) reached the maximum value of 48.9 at the 1 mol % of Cedoping. The dielectric constant, loss factor, and tunability of the 1 mol% Ce doped Ba0.6Sr0.4TiO3 thin films were 320, 0.011, and 46.3%, respectively.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.32 no.2
• /
• pp.134-140
• /
• 2019

Oxide ($SnO_2$)/metal alloy (Cu(Ni))/oxide ($SnO_2$) multilayer films were fabricated using the magnetron sputtering technique. The oxide and metal alloy were $SnO_2$ and Ni-doped Cu, respectively. The structural, optical, and electrical properties of the multilayer films were investigated using X-ray diffraction (XRD), ultraviolet-visible (UV-vis) spectrophotometry, and 4-point probe measurements, respectively. The properties of the $SnO_2/Cu(Ni)/SnO_2$ multilayer films were dependent on the thickness and Ni doping of the mid-layer film. Since Ni atoms inhibit the diffusion and aggregation of Cu atoms, the grain growth of Cu is delayed upon Ni addition. For $250^{\circ}C$, the Haccke's figure of merit (FOM) of the $SnO_2$ (30 nm)/Cu(Ni) (8 nm)/$SnO_2$ (30 nm) multilayer film was evaluated to be $0.17{\times}10^{-3}{\Omega}^{-1}$.