Effect of temperature, $GeH_4$ gas pre-flow, gas ratio on formation of SiGe layer for strained Si
(Strained Si를 만들기 위한 SiGe layer 형성에 temperature, $GeH_4$ gas pre-flow, gas ratio가 미치는 영향)
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- Proceedings of the Materials Research Society of Korea Conference
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- 2003.11a
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- pp.60-60
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- 2003