• Journal of the Semiconductor & Display Technology
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• v.19 no.2
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• pp.22-25
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• 2020

Deep red EuSi₂O₂N₂ phosphors were synthesized under various sintering gas pressures (1 atm, 2 atm, and 3 atm). They were in good agreement with the standard EuSi₂O₂N₂ ICSD card # 41-6046 (a monoclinic crystal system with space group of P2₁/a). Their photoluminescence intensities were significantly increased with increasing the gas pressures. They showed a broad band emission peaking at 680 nm due to 4f⁶5d¹ - 4f⁷ of Eu²⁺ ion, which can be efficiently excited in the visible range up to 550 nm. The best one at 3 atm was applied for red LED based on blue chip, which showed the strong deep red emission.

• Proceedings of the KIEE Conference
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• 2004.11a
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• pp.187-190
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• 2004

In this work, we investigated etching characteristics and mechanism of BST thin films using $Cl_2$/Ar, $CF_4/Cl_2$/Ar and $BCl_3/Cl_2$/Ar gas mixtures using inductively coupled plasma (ICP) system. A chemically assisted physical etch of BST was experimentally confirmed by ICP under various gas mixtures. The etch rate of the BST thin films had a maximum value at 20 $BCl_3$ and 10% $CF_4$ gas concentration, and decreased with further addition of $BCl_3$ or $CF_4$ gas, because $BaCl_x$, $SrCl_x$, $BaF_x$ and $SrF_x$ compounds have higher melting and boiling points. The maximum etch rate of the BST thin films was 57nm/min at the 30% $Cl_2(Cl_2+Ar)$. The characteristics of the plasma were analyzed by using OES and Langmuir probe.

• Advances in Energy Research
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• v.2 no.2
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• pp.61-72
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• 2014

This paper's aim is to do a global evaluation (considering four dimensions: technical-economic, environmental, social and political) in the ways of natural gas transportation (gas pipelines, GNL and GTL) and electric transmission, in order to supply the energy demands of Mato Grosso do Sul, a brazilian state. The transport ways had been compared between itself using a software of decision taking (Decision Lens Suite), which determined a better way for transporting natural gas in this case. In a generalized manner the gas pipeline is the best way of transporting natural gas, therefore it takes advantage in the majority of the analyzed dimensions.

• Proceedings of the Korean Society of Propulsion Engineers Conference
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• 2011.11a
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• pp.717-720
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• 2011

Due to the depletion of fossil fuel, high oil price and global warming issue by green house gas such as CO2, clean synthetic fuel technologies using biomass, especially GTL(Gas To Liquid) technology, have been greatly attracted. This paper has examined and compared the worldwide technologies trend of natural gas reforming reaction, F-T(Fisher-Tropsch) synthesis and upgrading process which are three backbones of GTL technology.

• Proceedings of the Korean Society of Propulsion Engineers Conference
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• 2009.05a
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• pp.395-399
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• 2009

Advanced afterburner used in the most modernized gas turbine has new designing paradigm to cope with reinforced power density. The most distinct change is the designing trend to integrate fuel injectors and flame holder in order to manage higher temperature of inlet air. F414 and F110-GE-132 engine adopted this methodology and installed a variable nozzle utilizing CMC(Ceramic Matric Composite) material and active cooling of nozzle flap with ejector nozzle in order to enhance the life cycle of engine components and an economical aspect. These technological trends can be utilized for an advanced ramjet engine and combined cycle engine like TBCC.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.14 no.5
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• pp.351-355
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• 2001

Via for achieving reliable fabrication of MCM(Multichip Module) substrate was formed on photosensitive BCB layer. The MCM substrate consists of photosensitive BCB(Benzocyclobutene) interlayer dielectric and copper conductors. In order to form the vias in the photosensitive BCB layer, the process of forming the BCB layer and its via forming plasma etch using C$_2$F$\_$6//O$_2$ gas were evaluated. The thickness of the BCB layer after hard bake was shrunk down to 40% of the original. The resolution of vias formed on the BCB was 15㎛ and the slope after develop was 85 degree. AES analysis was done on two vias, one is etched in C$_2$F$\_$6/O$_2$ gas and the other isnot etched. On the via etched in C$_2$F$\_$6//O$_2$, native C was detected and the amount of native C was reduced after Ar sputter. On the via not etched in C$_2$F$\_$6//O$_2$, organic C was detected. As a result of AES, BCB residue was not removed by Ar sputter, so plasma etch is necessary for achieving reliable vias.

• 한국연소학회:학술대회논문집
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• 2003.12a
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• pp.125-130
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• 2003

본 논문에서는 액체로켓엔진에서 터보펌프의 160kW급 터빈을 구동하고, 액체산소와 케로신을 추진제로 사용하는 가스발생기의 설계점 연소성능시험 결과에 대해 논의하였다. 충돌형 F-O-F 인젝터, 물냉각 채널을 가진 연소실, torch ignitor, turbulence ring 그리고 측정 링을 갖는 가스발생기에 대해 기술하였고, 점화, 연소, 종료 등의 시험 cyclogram에 대해 언급하였다. 설계점에서의 연소시험 및 turbulence ring 장착여부, 연소실 길이 변화에 따른 연소시험의 결과들에 대해 기술하였다. 연소시험 결과 가스발생기는 설계점에서 안정된 작동성을 보여주었고, 연소압력 및 온도 등의 성능이 예측치에 근접하는 결과를 보여 주었다. Turbulence ring은 출구에서의 가스온도를 균일하게 분포시켜 효과적인 혼합 장치임을 보여 주었고, 4-6msec 정도에서의 잔류시간에서는 연소효율의 차이가 크지 않음을 알 수 있었다. 가스발생기 출구에서의 온도는 공급되는 추진제의 O/F ratio에 따라 매우 민감하게 반응함을 알 수 있었다.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.07a
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• pp.99-102
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• 2000

Via for achieving reliable fabrication of MCM-D substrate was formed on the photosensitive BCB layer. MCM-D substrate consists of photosensitive BCB(Benzocyclobutene) interlayer dielectric and copper conductors. In order to form the vias in photosensitive BCB layer, the process of BCB and plasme etch using $C_2$F$_{6}$ gas were evaluated. The thickness of BCB after soft bake was shrunk down to 60% of the original. AES analysis was done on two vias, one is etched in $C_2$F$_{6}$ gas and the other is non etched. On via etched in $C_2$F$_{6}$, native C was detected and the amount of native C was reduced after Ar sputter. On via non etched in $C_2$F$_{6}$, organic C was detected and amount of organic C was reduced a little after Ar sputter. As a result of AES, BCB residue was not removed by Ar sputter, so plasma etch is necessary for achieving reliable via.ble via.

• Journal of the Korean Society of Safety
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• v.11 no.3
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• pp.126-136
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• 1996

Synthesis of perfluoromethanesulfonyl fluoride(PFMSF) which is a valuable precursor of perfluoro-chemicals such as surface modifier and fine chemicals was studied by electrochemical fluorination (ECF). In order to determine the termination of preelectrolysis, it was carried to monitor the variation of current during preelectrolysis by means of constant cell voltage operation. In a batch cell, chronopotentiometric electrolysis and various chemical analysis such as GC, GC/MS and If were used to understand the potential change of electrode and synthesis and control of hazardous gases products. Termination of preelectrolysis was determinated by measurement the current and/or detection of $F_2$ gas generation. And during the preelectrolysis, an amount of generated $OF_2$ was shown that a lot of moisture was absorbed from air when a cell was filled with anhydrous hydrogen fluoride( AHF ). Above 4V cell voltage, $F_2$ gas was generated and acted on any form of fluorinating agents. In the ECF of MSC (methane sulfonyl chloride) by constant current operation, the potential of anode was intimately relation with generation of $SO_2F_2$. Exchange of Cl to F was dominatly occured in a initial stage. There were various gaseous products including PFMSF as main product and $C_4$ compounds.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11a
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• pp.213-216
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• 2001

Etching behaviors of ferroelectric YMn $O_3$ thin films were studied by an inductively coupled plasma (ICP). Etch characteristic on ferroelectric YMn $O_3$ thin film have been investigated in terms of etch rate, selectivity and etch profile. The maximum etch rate of YMn $O_3$ thin film is 300 $\AA$/min at Ar/C $l_2$ of 2/8, RF power of 800W, dc bias voltage of 200V, chamber pressure of 15mTorr and substrate temperature of 3$0^{\circ}C$. Addition of C $F_4$ gas decrease the etch rate of YMn $O_3$ thin film. From the results of XPS analysis, Y $F_{X}$ compunds were found on the surface of YMn $O_3$ thin film which is etched in Ar/C1/C $F_4$ plasma. The etch profile of YMn $O_3$ film is improved by addition of C $F_4$ gas into the Ar/C $l_2$ plasma. These results suggest that fluoride yttrium acts as a sidewall passivants which reduce the sticking coefficient of chlorine on YMn $O_3$.>.