• Journal of the Korean Vacuum Society
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• v.9 no.1
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• pp.42-47
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• 2000

The amorphous vanadium oxide thin films for thin-film rechargeable lithium batteries were fabricated by r.f. reactive sputtering at room temperature. As the experimental parameter, oxygen partial pressure was varied during sputtering. At high oxygen partial pressures(>30%), the as-deposited films, constant current charge/discharge characteristics were carried out in 1M $LiPF_6$, EC:DMC+1:1 liquid electrolyte using lithium metal as anode. The specific capacity of amorphous $V_2O_5$ after 200cycles of operation at room temperature was higher compared to crystalline $V_2O_5$. The amorphous vanadium oxide thin film and crystalline film showed about 60$\mu$Ah/$\textrm{cm}^2\mu\textrm{m}$ and about 38$\mu$Ah/$\textrm{cm}^2\mu\textrm{m}$, respectively. These results suggest that the battery capacity of the thin film vanadium oxide cathode strongly depends on the crystallinity.

• Journal of the Korean Society for Precision Engineering
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• v.3 no.2
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• pp.62-75
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• 1986

An experimental investigation of the machining characteristics such as cutt- ing resistance, surface roughness and tool wear in turning the test pieces of SM45C steel with both coated and uncoated carbide tool tips under various cutting conditions was conducted. Also a specially designed simple vibration damping device was experimentally evaluated for its effectiveness on machined surface roughness and a vibration test was conducted to confirm its ability to reduce the amplitude. Based on these tests finding, the following conclusions are made; 1. The cutting resistance($\textrm{p}_{1}$) increases as the depth of cut(d) increases at fixed feed rate(f) over the cutting speed(v) range of 43-226 m/min and p decreses about 18% average when V is increased for fixed d and f. At V= 226m/min, $\textrm{p}_{1}$/for A, C tips are about the same level but $\textrm{p}_{1}$ for B tip is 15% less than A, C tips. 2. The specific cutting resistance(Ks) at V=226 m/min was derived for A, B, C tips respectively and the value of Ks for B rip is about 20% less than A, C tips. 3. The surface roughness(Ra) improves significantly as the cutting speed(V) is increased and this effect was greater when V>100 m/min. On the other hand, Ra deteriorates as the feed rate(f) is increased and this trend was accelerated when f>0.3 mm/rev. With regard to the difference of Ra values among A, B, C tips, at V=226m/min, d=0.4mm, and f=0.31-0.61mm/rev, Ra values for B.C tips are about 17% less than tip A. 4. The experimental tool wear equations were derived for A, B, C tips and from these equations, the tool life($\textrm{T}_{\textrm{L}}$) baced on the I.S.O. criteria was calculated to be $\textrm{T}_{\textrm{L}}$<$\textrm{T}_{\textrm{LB}}$<$\textrm{T}_{\textrm{LC}}$ for both flank wear($\textrm{V}_{\textrm{B}}$) and boundary wear($\textrm{V}_{\textrm{N}}$). Hence, the coated tips are superior to the uncoated tip and tip C is considered to be the best. 5. The cutting resistance may be slightly reduced and the surface rounghness improved when the damper is used especially when V>100 m/min. Therefore this damping device is considered to be effective and practical. The experimental surface roughness equations were also derived. Based on the vibration test, it is established that the surface roughness improvement was the result of amplitude reduction made possible by the damper.

• Journal of Sensor Science and Technology
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• v.6 no.1
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• pp.63-71
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• 1997

The thin-film eletroluminescent (TFEL) device having the stacked structure of ZnS:Mn/$ZnS:TbF_{3}$ has been fabricated. Insulate layers used (Pb,La)$TiO_{3}$ and $SiO_{2}$ thin films. The emission color was white. The TFEL device employing ZnS:Mn/$ZnS:TbF_{3}(8000{\AA})$ stacked phosphor layers showed the threshold voltage of $78V_{rms}$. And the brightness of the TFEL device was $400{\mu}W/cm^{2}$ at the applied voltage of $100V_{rms}$. The emission spectrum of TFEL device had a wavelength from 450nm to 620nm. The manufactured devices can be a practical use as a TFEL devices of red, green and blue by using the color filters.

• Journal of the Korean Vacuum Society
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• v.10 no.1
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• pp.51-56
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• 2001

$CeO_2$ thin films as insulator for MFISFET (Metal-ferroelectric-insulator- semiconductor-field effect transistor) were deposited by r.f. magnetron sputtering. Ar and $O_2$ gas as the deposition gas were used and the effects of oxygen partial pressure during sputtering on texture and electrical properties of $CeO_2$ thin films were evaluated. All $CeO_2$ thin films deposited on p-type Si(100) substrate at $600^{\circ}C$ exhibited (200) preferred orientation. The films deposited with only Ar gas among various condition had highest preferred orientation but show large hysteresis characteristics in capacitance-voltage measurement due to relatively many charged paricles and roughness. Films show smooth surface state and good C-V characteristics with increasing oxygen partial pressure. It was thought that this trend in C-V characteristics was due to the amount of mobile ionic charge within $CeO_2$ films. The composition of films show oxygen excess, that is, O/$Ce_2$ ratio of films was 2.22~2.42 range and leakage current of films show $10^{-7}~10^{-8}A$order at 100 kV/cm.

• Bulletin of the Korean Chemical Society
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• v.29 no.1
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• pp.139-147
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• 2008

New PPV derivatives which contain electron-withdrawing CF3F4phenyl group, poly[2-(2-ethylhexyloxy)-5-(2,3,5,6-tetrafluoro-4-trifluoromethylphenyl)-1,4-phenylenevinylene] (CF3F4P-PPV), and poly[2-(4-(2-etylhexyloxy)-phenyl)-5-(2,3,5,6-tetrafluoro-4-trifluoromethylphenyl)-1,4-phenylenevinylene] (P-CF3F4P-PPV), have been synthesized by GILCH polymerization. As the result of the introduction of the electron-withdrawing CF3F4phenyl group to the phenyl backbone, the LUMO and HOMO energy levels of CF3F4P-PPV (3.14, 5.50 eV) and P-CF3F4P-PPV (3.07, 5.60 eV) were reduced. The PL emission spectra in solid thin film are more red-shifted over 50 nm and increased fwhm (full width at half maximum) than solution conditions by raising aggregation among polymer backbone due to electron withdrawing effect of 2,3,5,6-tetrafluoro-4-trifluoromethylphenyl group. The EL emission maxima of CF3F4P-PPV and P-CF3F4P-PPV appear at around 530-543 nm. The current density-voltage-luminescence (J-V-L) characteristics of ITO/PEDOT/polymer/Al devices of CF3F4P-PPV and P-CF3F4P-PPV show that turn-on voltages are around 12.5 and 7.0 V, and the maximum brightness are about 82 and 598 cd/m2, respectively. The maximum EL efficiency of P-CF3F4P-PPV (0.51 cd/A) was higher than that of CF3F4P-PPV (0.025 cd/A).

• Journal of the Korean Geotechnical Society
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• v.21 no.6
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• pp.101-115
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• 2005

For the site characterization at two inland areas, Gyeongju and Hongsung, which represent geomorphic and geologic characteristics of inland region in Korea, in-situ seismic tests containing borehole drilling investigations and resonant column tests were peformed and site-specific seismic response analyses were conducted using equivalent linear as well as nonlinear scheme. The soil deposits in Korea were shallower and stiffer than those in western US, from which the site coefficients and site classification system in Korea were derived. Most sites were categorized as site classes C and D based on the mean shear wave velocity $(V_s)$ of the upper 30 m $(V_s30)$, ranging between 250 and 650 m/s. According to the acceleration response spectra determined from the site response analyses, the site coefficients specified in the current Korean seismic design guide underestimate the ground motion in the short-period band and overestimate the ground motion in mid-period band. These differences can be explained by the differences in the bedrock depth and the soil stiffness profile between Korea and western US. The site coefficients, $F_a$ for short-period and $F_v$ for mid-period, were re-evaluated and the site classification system, in which sites C and D were subdivided according to $V_s20,\;V_s15,\;and\;V_s10$ together with the existing $V_s30$ was introduced accounting for the local geologic conditions at inland region of the Korean peninsula. The proposed site classification system in this paper is still rudimentary and requires modification.

• Korean Journal of Optics and Photonics
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• v.6 no.3
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• pp.214-221
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• 1995

When the broad pressure region (0.5-3.5 atm) of laser media is pumped by 70 ns [FWHM] electronbeam accelerator (800 kV, 21 kA), the correlation between free-runnuing XeF$(C\rightarrowA$ excimer laser output and Xe concentration are studied. The resonator consisted of dichroic output coupler, and the laser output is optimized with laser media $(Xe/F_2/Ar)$ as functions of total pressure and gas mixing ratio. Under the condition of F2 0.46% fixed, the laser intrinsic efficiencies of 0.38%, 1.03%, and 0.29% are obtained at 1. 2, and 3 atm, respectively. So then the peaks of laser intrinsic efficiency occured to the higher Xe concentration with decreasing total gas pressure. By analyzing the kinetics for the $XeF^*(C)$ formation efficiency and XeF$(C\rightarrowA$ laser extraction efficiency the dependence of Xe concentration on their correlation is explained. As the results we propose efficient operation of an atmosphericpressure XeF$(C\rightarrowA$ laser. laser.

• Nuclear Engineering and Technology
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• v.52 no.7
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• pp.1503-1510
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• 2020

Ultra-low noise charge sensitive amplifiers (CSAs) based on various types of circuit board substrates, such as FR4, Teflon, and ceramics (Al₂O₃) with two different designs, PA1 and PA2, have been developed. They were tested to see the noise effect from the dielectric loss of the substrate capacitance before and after irradiation. If the electronic noise from the CSAs is to be minimized and the energy resolution enhanced, the shaping time has to be optimized for the detector, and a small feedback capacitance of the CSA is favorable for a better SNR. Teflon- and ceramic-based PA1 design CSAs showed better noise performance than the FR4-based one, but the Teflon-based PA1 design showed better sensitivity than ceramic based one at a low detector capacitance (<10 pF). In the PA2 design, the equivalent noise and the sensitivity were 0.52 keV FWHM for a silicon detector and 7.2 mV/fC, respectively, with 2 ㎲ peaking time and 0.1 pF detector capacitance. After 10, 100, 10³, 10⁴, and 10⁵ Gy irradiation the ENC and sensitivity characteristics of the developed CSAs based on three different substrate materials are also discussed.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.07b
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• pp.1015-1018
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• 2004

We investigate the influence of the New Electron Injection Layers (EIL) on the performance of the Alkali Metal Complex vapor-deposited Organic Light Emitting Diodes(OLED). Two different Alkali Metal Complex were used; Lithium Quinolate (Liq), and Sodium Quinolate (Naq). In all cases, $Alq_3$ was the Electron Transporting Layer (ETL). We measure and compare the current density-voltage (J-V) and luminance-voltage (L-V) characteristics. We concluded that the turn-on voltage, and luminance efficiency are controlled by the type of EIL material used. We show the longer life-time OLED with Alkali Metal Complex EIL than OLED with LiF EIL. And we show the Optimized Alkali Metal Complex thickness is 3nm. Existent LiF to because is inorganic material, there is trouble to do epitaxy into thin layers but regulates the thickness in case of Alkali Metal Complex matter characteristic that is easy be. Alkali Metal Complex also appeared by sensitive thing in thickness than LiF If utilize this material, It is thought much advantages may be at common use of OLED.

• ALGAE
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• v.18 no.4
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• pp.255-262
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• 2003

Ecological characteristics of phytoplankton communities were investigated biweekly at 6 stations from Feb. 2001 to Feb. 2002 at the lower part of the Han River. During the study, a total of 267 taxa which were composed of 114 green algae, 104 diatoms, 22 blue-green algae, 13 chrysophytes and 2 dinoflagellates were observed. The standing crops of phytoplankton communities were ranged from 1.30 ${\times}10^6$ cells ${\cdot}l^{-1}$ to 37.47 ${\times}10^6$ cells ${\cdot}l^{-1}$. The dominant species were 11 taxa including Pediastrum duplex, Scenedesmus quadricauda in green algae, Osillatoria limosa, Microcystis aeruginosa, Merisomorpedia sp., Phormidium sp. in blue-green algae, and Asterionella gracillima, Aulacoseira granulata, Fragilaria crotonensis, Stephanodiscus hantzschii f. tenuis, Synedra acus in diatoms. Asterionella gracillima and Stephanodiscus hantzschii f. tenuis were abundant at every station from winter to spring. Stephanodiscus hantzschii f. tenuis occupied the highest dominant ratio and standing crop. From summer to autumn, dominant species were Aulacoseira granulata at all stations and blue-green algae such as Osillatoria limosa, Microcystis aeruginosa, Merisomorpedia sp. at some stations. These 4 species were mostly present at the lower stations 4, 5, 6 and very few at the upper stations 1, 2, 3.