• Journal of Ginseng Research
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• v.9 no.2
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• pp.264-269
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• 1985

The inheritance of violet and green stems was examined in F1 F2 of violetstem variant x yellow-berry variant in Panax ginseng C. A. Meyer, and the characters of F1 and F2 plants were investigated. From these results, it was shown that most of the characters of F1 and F2 plants were simillar to the female plants. However, reciprocal crosses between violet and green stems yielded progeny of violet-stem variant. Thus the cross V♀x♂Y gave all violet-stem seedlings, and the cross Y♂ x Y♀ gave all violet-stem seedlings. And all of the crosses segregated in F2 in a ratio of 3 violet to 1 green.

• Journal of the Earthquake Engineering Society of Korea
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• v.8 no.3
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• pp.23-32
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• 2004

The local geologic and dynamic site characteristics, which include soil profiles, shear wave velocity profiles and depths to the bed rock were gathered from 148 sites all over the Korean peninsula and those values are compared to those in the western USA. Site response analyses were performed based on equivalent linear scheme using design rock-outcrop acceleration of 0.154g which corresponds to the collapse level of earthquake for seismic category I structure. The results show that the amplification factor based on Korean seismic design guideline underestimates the motion in short-period range and overestimates the motion in mid-period range. It is suggested that the existing Korean seismic guideline based on UBC is required to be modified considering dynamic site characteristics in Korea for the reliable estimation of site amplification.

• Proceedings of the International Microelectronics And Packaging Society Conference
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• 2003.11a
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• pp.214-217
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• 2003

상하로 양극 영역이 중첩된 새로운 Si 포토다이오드를 제작하고 이의 전기광학적 특성을 조사하였다. 제작된 소자의 역포화전류와 이상계수는 각각 68pA와 1.8로 나타났으며 -3V 바이어스에서 측정된 접합 커패시턴스는 8.3 pF로 나타났다. 또한 $100mW/cm^2$, AMI 스펙트럼 조건에서 -3V 바이어스 아래 측정된 광전류와 감도특성은 각각 $60\;{\mu}A$와 6 A/W로 나타났다.

• Proceedings of the Optical Society of Korea Conference
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• 1988.06a
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• pp.17-25
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• 1988

방전여기 엑사이머 레이저의 방전특성을 해석하기 위하여 레이저 발진 장치를 개발, 실험을 하였다. 실험결과 가스혼합비 Kr/F2/He=4/0.2/05.8%, 총기압 2기압, 가압전압 30kV에서 최대출력 80mj, 가압 전압 20kV에서 최대효율 0.5%를 얻었다. 또한 대출력, 고효율화를 위하여 실험조건과 동일하게 방전특성을 해석한 결과 레이저 방전관 부의 저항값과 인덕턴스가 적을수록 레이저 방전관에 입력하는 에너지가 커지므로 이들의 값을 적게 히여야만 대축력 꾀할 수 있음을 알 수 있었다.

• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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• v.23 no.1
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• pp.78-84
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• 2009

In this paper, ZnO:Al thin film was deposited on polyethylene terephthalate(PET) substrate by capacitively coupled r. f. magnetron sputtering method from a ZnO target mixed with 2wt[%] Al2O3 to investigate the possible application of ZnO:Al film as a transparent conducting electrode for film typed DSCs. The effect of substrate bias on the electrical properties and film structure were studied. The results showed that a positive bias applied to the substrate during sputtering contributed to an improvement of electrical properties of the film by attracting electrons in the plasma to bombard the growing films. These bombardments provided additional energy to the growing ZnO:Al film on the substrate, resulting in significant variations in film structure and electrical properties. Electrical resistivity of the film decreases significantly as the positive bias increases up to +30[V] However, as the positive bias increases over +30[V], the resistivity decreases. The transmittance varies little as the substrate bias is increased from 0 to +60[V], and as r. f. powers increases from 160[W] to 240[W]. The film with electrical resistivity as low as $1.8{\times}10^{-3}[{\Omega}-cm]$ and optical transmittance of about 87.8[%] were obtained for 1,012[nm] thick film deposited with a substrate bias of +30[V].

• Journal of the Korean Institute of Telematics and Electronics A
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• v.33A no.5
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• pp.102-107
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• 1996

Use of a rapid thermal annealing (RTA) technique is shown to improve the properties of metal-ferroelectric BaMgF$_{4}$-silicon structures. The fluoride film was deposited in an ultra-high vacuum system at asubstrate temperature of 300$^{\circ}C$. A post-deposition annelaing was conducted for 10 seconds at 600.deg. C in a vacuum of 0.1 Torr, using a home-made RTA apparatus. The results showed that the resistivity of the ferroelectric BaMgF$_{4}$ film from a typical value of 1-2${\times}10^{11}{\Omega}{\cdot}cm$ before the annealing to about 5${\times}10^{13}{\Omega}{\cdot}cm$ and reduce the interface state density of the BaMgF$_{4}$/Si interface to about 8${\times}10^{10}cm^{2}{\cdot}$eV. Ferroelectric hysteresis measurements using a sawyer-tower circuit yielded remanent polarization and coercive field values of about 0.5$\mu$C/cm$^{2}$ and 80 kV/cm, respectively. the typical remanent polarization of the BaMgF$_{4}$ films ont he (100) and (111) oreientated silicon wafers were 0.5 - 0.6 $\mu$C/cm$^{2}$ and that of th efilms on the (110) wafers was 1.2$^{\circ}C$/cm$^{2}$.

• Korean Journal of Materials Research
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• v.10 no.12
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• pp.807-811
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• 2000

CeO$_2$ and SrBi$_2$Ta$_2$O$_{9}$ (SBT) thin films for MFISFET (Metal-ferroelectric-insulator-semiconductor-field effect transistor) were deposited by r.f. sputtering and pulsed laser ablation method, respectively. The effects of sputtering gas ratio(Ar:O$_2$) during deposition for CeO$_2$ films were investigated. The CeO$_2$ thin films deposited on Si(100) substrate at $600^{\circ}C$ exhibited (200) preferred orientation. The preferred orientation, Brain size and surface roughness of films decreased with increasing oxygen to argon gas ratio. The films deposited under the condition of Ar:O$_2$= 1 : 1 showed the best C- V characteristics. The leakage current of films showed the order of 10$^{-7}$ ~10$^{-8}$ A at 100kV/cm. The SBT thin films on CeO$_2$/Si substrate showed dense microstructure of polycrystalline phase. From the C-V characteristics of MFIS structure with SBT film annealed at 80$0^{\circ}C$, the memory window width was 0.9V at 5V The leakage current density of Pt/SBT/CeO$_2$/Si structure annealed at 80$0^{\circ}C$ was 4$\times$10$^{-7}$ /$\textrm{cm}^2$ at 5V.

• Journal of Radiation Protection and Research
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• v.7 no.1
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• pp.23-33
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• 1982

The characteristic thermoluminescence responses of Teflon thermoluminescent dosimeters to radiations have been studied by the variation of radiation qualities as well as the high dose radiations. The change in the sensitivity of TLDs for different radiation qualities were studied through not only the photon energy dependence but also the change of supralinearity on the photon energy dependence, by exposing $^{60}Co$ gamma rays, the effective X-rays of 44keV, 69keV, 108keV, and thermal neutron of 0.04 eV. The results were as the following: The TL response of $T-CaSO_4$: Dy as a function of absorbed dose was linear up to about 5 Gy, and the response beyond 5Gy was supralinear for $^{60}Co$ gamma rays. The supralinearity of T-LiF-7 became noticeably apparent more than that of $T-CaSO_4$:Dy and also the lower the LET of radiation became the higher the supralinear effects were. No supralinearity appeared for the thermal neutron irradiations equivalent to 10Gy of $^{60}Co$ gamma rays. The relative sensitivities (Rs), which depended on the doses of $^{60}Co$ gamma rays to the TLDs of T-LiF-7 and T-$CaSO_4$:Dy could be, respectively, approximated to the following empirical formula fitted by the least square method: $$R_{LiF}=1.021-0.04581\;logD+0.402(logD)^2-0.405(logD)^3,\;\;5{\times}10^3{\geq}D{\geq}1(Gy)$$ $$R_{CaSO_4}=0.976-0.3241\;logD+0.262(logD)^2-0.298(logD)^3,\;5{\times}10^3{\geq}D{\geq}1(Gy)$$.

• Journal of the Korean Society of Fisheries and Ocean Technology
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• v.27 no.4
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• pp.328-331
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• 1991

LiF(Mg,Cu,Na,Si) 형광체의 ${\gamma}$선과 $\beta$선에 대한 TSEE 특성을 조사하였다. 상(60)Co ${\gamma}$선에 대한 감도는 약 450 counts/mR이었고, 여러 가지 $\beta$선에 대한 TSEE 에너지 의존성은 $\beta$입자의 평균에너지 0.02MeV에서 0.8MeV 사이에서 $\pm$10%이었다. 그리고 제작된 형광체 앞면에 7mg.cm 상(-2)의 인체 등가물질을 두 면 입사 $\beta$입자의 에너지에 무관하게 피부 흡수 선량을 측정할 수 있었다.

• Journal of the Korean Vacuum Society
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• v.5 no.4
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• pp.359-364
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• 1996

$SrTiO_3$ thin films were deposited on Pt/Ti/$SiO_2$/Si substrates at low temperatures below $300^{\circ}C$ by r.f. magnetron sputtering. The materials and the electrical properties of the deposited films were investigated with controlling deposition parameters such as substrate temperature(T_s) and positive substrate d.c. bias voltage. Stoichiometric $SrTiO_3$ films were obtained at Ts of $300^{\circ}C$, but Sr content in the film was less than that of a target when Ts was lower than $300^{\circ}C$, resulting in poor electrical properties. By introducing a positive substrate d.c. bias during deposition, the crystallinity and the dielectric properties of the films were markedly improved. 400 nm thick $SrTiO_3$, films deposited at $300^{\circ}C$ with a positive substrate d.c. bias of 20V showed a columnar structure with <211> crystallographic direction and a dielectric constant of 98.