• Proceedings of the Korean Vacuum Society Conference
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• 1998.02a
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• pp.113-113
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• 1998

C CdTe와 HgCdTe는 광전소자나 태양전지,x 선 및 y 선 감지 소자 그리고 적외선 감지소 자로의 웅용둥으로 인하여 많은 연구가 진행되고 있다. 광전소자를 제작함에 있어서 깊은 준위나 얄은 준위에 있는 몇들은 운반자 수명에 매우 큰 영향을 미치고 있음에도 불구하고 광전도도 측정에 의한 운반자 수명 연구에 대하여는 보고된 것이 별로 없다. 이에 본 논문에서는 CdTe 시료의 광전도도를 측정하여 운반자 수명 및 깊은 준위의 위치를 알아보았다 M MBE방법을 이용하여 CdTe 기판위에 In을 도핑한 CdTe를 성장하였다. 광전도 붕괴(PCD) 측정은 300 K에서부터 400 K까지 온도를 변화시켜주면서 측정을 하였고 광원으로서 G GaP- LED를 사용하였으며 전압 신호를 읽기 위하여 Tektronix 2430A 오실로스코프를 이용하 였다 .. Fig. 1. 에서 보인바와 같이 광전도 붕괴곡선은 접선으로 나타낸 하나의 지수 함수적 붕 괴(a2exp( -t/ r 2))보다는 설선으로 나타낸 두 개의 지수함수적 붕괴(alexp( νr 1)+a2exp( -νr 2)) 가 더욱 잘 실험결과와 일치함을 알 수 있었다. 이러한 것은 과잉 전하에 대한 깊은준위를 가 지고 있는 반도체물질에서 일반적으로 관찰되는 것으로 시료가 n 형이기 때문에 소수 운반자 인 정공의 벚에 의한 것으로 생각된다 .. Fig. 2. 에서는 운반자 수명의 온도에 대한 변화를 나타 낸 것이다. 온도가 증가함에 따라 운반자 수명이 감소하는 경항올 보이고 있으며 이것올 이용 하여 딪익 활성화 에너지를 계산 하여 본 결과 0.35 eV 와 0.43 eV염을 알수 있었다.

• Proceedings of the KIEE Conference
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• 1988.11a
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• pp.372-375
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• 1988

The III-V ternary alloy semiconductor $In_{l-x}Ga_{x}As$ were grown by the temperature Gradient of $0.60{\leq}x{\leq}0.98$. The electrical properties were investigated by the Hall effect measurement with the Van der Pauw method in the temperature range of $90{\sim}300K$. $In_{l-x}Ga_{x}As$ were revealed n-type and the carrier concentration at 300K were in the range of $9.69{\times}10^{16}cm^{-3}{\sim}7.49{\times}10^{17}cm^{-3}$. The resistivity was increased and the carrier mobility was decreased with increasing the composition ratio. The optical energy gap determined by optical transmission were $20{\sim}30meV$ lower than theoretical valves on the basis of absorption in the conduction band tail and it was decreased with increasing the temperature by the Varshni rule. In the photoluminescence of undoped $In_{l-x}Ga_{x}As$ at 20K, the main emission was revealed by the radiative recombination of shallow donor(Si) to acceptor(Zn) and the peak energy was increased with increasing the composition, X. The diffusion depth of Zn increases proportionally with the square root of diffusion time, and the activation energy for the Zn diffusion into $In_{0.10}Ga_{0.90}As$ was 2.174eV and temperatures dependence of diffusion coefficient was D = 87.29 exp(-2.174/$K_{B}T$). The Zn diffusion p-n $In_{x}Ga_{x}As$ diode revealed the good rectfying characteristics and the diode factor $\beta{\approx}2$. The electroluminescence spectrum for the Zn-diffusion p-n $In_{0.10}Ga_{0.90}As$ diode was due to radiative recombation between the selectron trap level(${\sim}140meV$) and Zn acceptor level(${\sim}30meV$). The peak energy and FWHM of electroluminescence spectrum at 77K were 1.262eV and 81.0meV, respectively.

• 대한상한금궤의학회지
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• v.4 no.1
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• pp.29-36
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• 2012

Aim : To investigate the hepatotective effect of Gardenia jsaminodes and Glycine max aqueous extract against D-galactosamine (d-GalN, 300mg/kg body weight) was administered to the male Sprague Dawley (SD) rats. Materials and Methods : The study was carried out on male SD rats (age matched, weight $250{\pm}10g$). Experimental groups divided four: Normal group (Nor) was administered saline, Control (Con) group was administered saline after d-GalN treatment. Experimental group (Exp) was administered Gardenia jsaminodes (200 mg/kg; Ga group), Glycine max (700 mg/kg; Gl group), and Gardenia jsaminodes+Glycine max (200 mg/kg+700 mg/kg, GG group) during 14 days(n=5). Results : d-GalN administration induced hepatotoxicity in rats which was manifested by increased levels of alanine aminotransferase, aspartate aminotransferase, alkaline phosphatase but decreased total cholesterol and triglyceride. Treatment with Gardenia jsaminodes extract significantly protected the liver in d-GalN administered rats. Conclusion : Gardenia jsaminodes aqueous extract and Gardenia jsaminodes+Glycine max extract possesses hepatoprotective potential, thus validating its use in alleviating toxic effects of d-GalN.

• Horticultural Science & Technology
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• v.19 no.4
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• pp.535-539
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• 2001

To establish the cultural practices of persimmon in heated plastic house, the growth and flower bud differentiation of 4-year old 'Nishimurawase' persimmon tree planted in 80 L pots were investigated. Temperature was kept at above $18^{\circ}C$. The earlier heating induced the earlier flower bud differentiation, while the number of days from bud burst to flower bud differentiation was 70-75 days, which was not affected by the date of heating. The date of flower bud differentiation in 'Nishimurawase' persimmon was May 1, May 21, and June 1 in the plastic house heated from Jan. 15, Feb. 15, and Mar. 15, respectively. The number of flower primordia per bud in the plastic house was 6.2-7.1, slightly fewer than that of 7.8 in the open-field, with the tendency of increasing the number by earlier heating. The days required for the differentiation of the last flower bud primordia from the beginning of differentiation of the first bud were 40-60, and that required for the flower bud differentiation of all buds on the same shoot was 30. The total carbohydrates in shoot increased and the contents of nitrogen decreased, resulting in increased C/N ratio just before flower bud differentiation, and it coincided with the time when the total carbohydates increased above 15%. During two weeks before flower bud differentiaton, The contents of zeatin per 1 g dry matter of shoot drastically increased from $27.2{\mu}g$ to $47.3{\mu}g$, while that of IAA slightly decreased from $188.6{\mu}g$ to $172.4{\mu}g$, and that of GA decreased from $2,225{\mu}g$ to $1,555{\mu}g$.