• 한국정보디스플레이학회:학술대회논문집
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• 2000.01a
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• pp.67-68
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• 2000

Polycrystalline silicon (poly-Si) thin film transistors (TFT's) employing vertical amorphous silicon (a-Si) offsets have been fabricated without additional photolithography processes. The a-Si offset has been formed utilizing the poly-Si grain growth blocking effect by thin native oxide film during the excimer laser recrystallization of a-Si. The ON current degradation of the new device after 4 hour's electrical stress was reduced by 5 times compared with conventional poly-Si TFT's.

• Proceedings of the Optical Society of Korea Conference
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• 1995.06a
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• pp.59-67
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• 1995

부분간섭조명과 central obscuration의 Optical Transfer Function(OTF) 에의 영향을 조사해보고, 이의 programing 기법을 소개하며, 모든 3차 수차와 5차 구면수차가 제거된 5반사광학계에 적용하여 축소배율(M = +1/5)을 갖는 리소그래피용 광학계로서의 가능성을 알아보았다. 이렇게 하여 얻어진 광학계 central obscuration이 약 31%이고 과월을 ArF excimer 레이저( 파장 0.193$\mu$m) 로 하는 nearly inchorent illumination($\sigma$ = 1.0)인 경우 NA가 0.45이며 분해능이 50% MTF 기준치와 초점심도 0.8$\mu$m에 대해 약 600cycles/mm 정도인 성능을 갖는 시스템이 되었다.

• Transactions of Materials Processing
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• v.13 no.3
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• pp.205-210
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• 2004

The waveguide Bragg gratings have been fabricated by the phase-mask method. An excimer laser with maximum 600mJ output pulse energy and uniform phase masks have been used. Hydrogen loading is often used for enhancing the uv photosensitivity of the core, however, the resultant gratings show significant aging effect. In the present study, high temperature thermal annealing process has been investigated to obtain thermal gratings and process parameters are deduced.

• Journal of Information Display
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• v.4 no.3
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• pp.17-21
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• 2003

A low temperature doping technique to be applied in poly-Si TFTs on plastic substrates was investigated. Heavily-doped amorphous silicon layers were deposited on poly-Si and the dopant atoms were driven in by subsequent excimer laser annealing. The entire process was carried out under a substrate temperature of 120 $^{\circ}C$, and a sheet resistance of as low as 300 ${\Omega}$/sq. was obtained.

• 한국정보디스플레이학회:학술대회논문집
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• 2009.10a
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• pp.254-257
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• 2009

The crystallization and activated annealing effect of Si films using an excimer laser and a new CW blue laser are described comparing with furnace annealing (SPC) for the application of advanced TFTs and future applications. Currently, pulsed ELA is used extensively as a LTPS process on glass substrates as the efficiency is high in UV region for thin Si film of 40- 60 nm thickness. ELA enables extremely low resistivity for both n- and p-typed Si films. On the other hand, CW BLDA enables the smooth Si surface having arbitral grains from micro-grains to anisotropic huge grain structure only controlling its power density.

• Bulletin of the Korean Chemical Society
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• v.30 no.7
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• pp.1675-1677
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• 2009

• Bulletin of the Korean Chemical Society
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• v.31 no.12
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• pp.3809-3811
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• 2010

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2004.05b
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• pp.330-334
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• 2004

본 논문에서는 Nd:YAC 레이저의 제 2고조파에 의해 펌핑되는 고체레이저의 다중통과 증폭기의 이론적 고찰에 대하여 논하였다. 다중통과 증폭기의 입력레이저는 Ti:sapphire 레이저이며, 펌핑광원의 주입 후 입력 빔의 통과 회수에 따른 추출효율, 소신호 이득계수에 대한 변화 등을 조사하여 다중통과 증폭을 위한 최적조건을 구하였다. 또한, 실험에서 2단 다중통과 증폭기에서 790 nm의 입력 파장을 주입하였을 때, 42 mJ의 최대 출력에너지, 21 ㏈의 증폭이득, 25%의 출력효율을 얻었다.

• Korean Journal of Optics and Photonics
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• v.1 no.1
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• pp.107-113
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• 1990

Characteristics and applications of three major types of lasers are discussed. They are chemical-metabolic, thermal destructive, and nonthermal mechanical lasers. The thermal destructive lasers ($CO_2$, Argon, and Nd:YAG) are especially explained in detail with regard to energy density, wavelength, fluence, stage of thermal destruction, and advantages of laser surgery. Excimer and Q-swiched lasers are discussed as nonthermal mechanical ones. Delivery system, optical fiber and articulated arm, is also discussed. Finally, recent advancements of medical laser are included in the conclusion.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.38 no.12
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• pp.25-35
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• 2001

In order to analyze the electrical characteristics of complicated thin film transistor-liquid crystal display (TFT-LCD) array circuits, it is indispensible to use simulation programs such as PSPICE and AIM-SPICE. In this paper, we present a systematic method of extracting the input parameters of poly-Si TFT for SPICE simulations. This method was applied to two different types of poly-Si TFTs, fabricated by excimer laser annealing and silicide mediated crystallization methods, and yielded good fitting results to experimental data. Among the SPICE simulators, PSPICE has the graphic user interface feature making the composition of complicated circuits easier. We added successfully a poly-Si TFT device model to the PSPICE simulator, and analyzed easily the electrical characteristics of pixels considering the line RC delay. The results of this work would contribute to efficient simulations of poly-Si TFT-LCD arrays.