• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2001.05a
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• pp.349-352
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• 2001

In this paper, novel device structure in order to realize ultra fast and ultra small silicon devices are investigated using ultra-high vacuum chemical vapor deposition(UHVCVD) and Excimer Laser Annealing (ELA) for ultra pn junction formation. Based on these fundamental technologies for the deep sub-micron device, high speed and low power devices can be fabricated. These junction formation technologies based on damage-free process for replacing of low energy ion implantation involve solid phase diffusion and vapor phase diffusion. As a result, ultra shallow junction depths by ELA are analyzed to 10~20 nm for arsenic dosage (2$\times$10$^{14}$ $\textrm{cm}^2$), excimer laser source(λ=248nm) is KrF, and sheet resistances are measured to 1k$\Omega$/$\square$ at junction depth of 15nm.

• Transactions of the Korean Society of Mechanical Engineers B
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• v.24 no.12
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• pp.1582-1582
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• 2000

Rayleigh scattering and laser induced predissociative fluorescence are employed for capturing two-dimensional images of temperature and species concentration in a laminar nonpremixed flame of a diluted hydrogen jet. Rayleigh scattering cross-sections are experimentally obtained at 248nm. Dispersed LIPF spectra of OH and O₂ are also measured in a flame in order to confirm the excitation of single vibronic state of OH and O₂are excited on the P₁(8) line of the A ²∑+ (v＇=3) - X ²∏(v˝=0) band and R(17) line of the Schumann-Runge band B ³∑u- (v＇=0) - X ³∑g-∏(v˝=6), respectively. Fluorescence spectra of OH and Hot O₂ are captured and two-dimensional images of the hydrogen flame field are successfully visualized.

• Transactions of the Korean Society of Mechanical Engineers B
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• v.25 no.10
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• pp.1311-1317
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• 2001

To investigate only the effects of the stratified mixture distribution on initial flame propagation and combustion characteristics, the instantaneous equivalence ratio in the spark plug gap and combustion pressure were measured simultaneously In a constant volume chamber, To induce the stratified propane-air mixture distribution near the spark plug, counter-flow typed mixture injection system was used under the constant mean equivalence ratio $\Phi$$\_$mean/= 1.0 The instantaneous equivalence ratio was measured by a single-shot Raman scattering with narrow-band KrF excimer laser. The measuring error was within the limit of $\pm$ 3.5% provided that the proposed method was applied to the measured Raman signals. Judging from mass fraction burned derived from the measured pressure, the optimum combustion characteristics were shown under the condition that the local equivalence ratio in the spark plug was near 1.28$\pm$0.04, and these characteristics were more remarkable at the initial stage of combustion.

• Electrical & Electronic Materials
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• v.11 no.11
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• pp.22-27
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• 1998

We have investigated the effect of an ion shower doping of the laser annealed poly-Si films at an elevated substrate temperatures. The substrate temperature was varied from room temperature to 300$^{\circ}C$ when the poly-Si film was doped with phosphorus by a non-mass-separated ion shower. Optical, structural, and electrical characterizations have been performed in order to study the effect of the ion showering doping. The sheet resistance of the doped poly-Si films was decreased from7${\times}$106 $\Omega$/$\square$ to 700 $\Omega$/$\square$ when the substrate temperature was increased from room temperature to 300$^{\circ}C$. This low sheet resistance is due to the fact that the doped film doesn't become amorphous but remains in the polycrystalline phase. The mildly elevated substrate temperature appears to reduce ion damages incurred in poly-Si films during ion-shower doping. Using the ion-shower doping at 250$^{\circ}C$, the field effect mobility of 120 $\textrm{cm}^2$/(v$.$s) has been obtained for the n-channel poly-Si TFTs.

• Journal of ILASS-Korea
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• v.12 no.4
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• pp.185-190
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• 2007

There is a growing interest to develop a new cleaning technology to overcome the disadvantages of wet cleaning technologies such as environmental pollution and the cleaning difficulty of contaminants on integrated circuits. Laser cleaning is a potential technology to remove various pollutants on a wafer surface. However, there is no fundamental data about cleaning efficiencies and cleaning mechanisms of contaminants on a wafer surface using a laser cleaning technology. Therefore, the cleaning characteristics of a wafer surface using an excimer laser were investigated in this study. Fingerprint consisting of inorganic and organic materials was chosen as a representative of pollutants and the effectiveness of a laser irradiation on a wafer cleaning has been investigated qualitatively and quantitatively. The results have shown that cleaning degree is proportional to the laser irradiation time and repetition rate, and quantitative analysis conducted by an image processing method also have shown the same trend. Furthermore, the cleaning efficiency of a wafer contaminated by fingerprint strongly depended on a photothermal cleaning mechanism and the species were removed in order of hydrophilic and hydrophobic contaminants by laser irradiation.

• Journal of the Korean Vacuum Society
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• v.10 no.1
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• pp.72-80
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• 2001

In this paper, we present a systematic method of extracting the input parameters of poly-Si TFT(Thin-Film Transistor) for Spice simulations. This method has been applied to two different types of poly-Si TFTs such as ELA (Excimer Laser Annealing) and SMC (Silicide Mediated Crystallization) with good fitting results to experimental data. Among the Spice circuit simulators, the PSpice has the GUI(graphic user interface) feature making the composition of complicated circuits easier. We added successfully the poly-Si TFT model of AIM-Spice to the PSpice simulator, and analyzed easily to compare the electrical characteristics of pixels without or with the line RC delay. In the comparative results, the ELA poly-Si TFT is superior to the SMC poly-Si TFT in the charging time and the kickback voltage for the TFT-LCD (Thin Film Transistor-Liquid Crystal Display).

• Proceedings of the KIEE Conference
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• 2006.10a
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• pp.71-72
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• 2006

플라스틱 기판 위에 유도 결합 플라즈마 화학적 기상 증착장치 (Inductively Coupled Plasma Chemicai Vapor Deposition, ICP-CVD) 를 사용하여 실리콘 산화막 ($SiO_2$)을 증착하고, 엑시머레이저 어널링 (Excimer Laser Annealing, ELA) 과 $N_{2}O$ 플라즈마 전처리를 통해, 전기용량-전압(Capacitance-Voltage, C-V) 특성과 항복 전압장 (Breakdown Voltage Field) 과 같은 전기적 특성을 개선시켰다. 에너지 밀도 $250\;mJ/cm^2$ 의 엑시머 레이저 어닐링은 실리콘 산화막의 평탄 전압 (Flat Band Voltage) 을 0V에 가까이 이동시키고, 유효 산화 전하밀도 (Effective Oxide Charge Density)를 크게 감소시킨다. $N_{2}O$ 플라즈마 전처리를 통해 항복 전압장은 6MV/cm 에서 9 MV/cm 으로 향상된다. 엑시머 레이저 어닐링과 $N_{2}O$ 플라즈마 전처리를 통해 평탄 전압은 -9V 에서 -1.8V 로 향상되고, 유효 전하 밀도 (Effective Charge Density) 는 $400^{\circ}C$에서 TEOS 실리콘 산화막을 증착하는 경우의 유효 전하 밀도 수준까지 감소한다.

• Journal of the Optical Society of Korea
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• v.20 no.5
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• pp.575-578
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• 2016

The thermal endurance of fiber Bragg gratings (FBGs), written with the aid of 193-nm ArF excimer laser irradiation on H₂-loaded Ge/B codoped silica fiber, and pretreated with a CO₂ laser and a subsequent slow cooling process, is investigated. These treated gratings show relatively less degradation of grating strength during the thermal annealing procedure. The thermal decay characteristics of treated and untreated fiber, recorded over a time period of 9 hours, have been compared. The effect on the Bragg transmission depth (BTD) and the center-wavelength shift, as well as the growth of refractive-index change during the grating inscription process for both treated and untreated fiber, are analyzed.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.11a
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• pp.149-150
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• 2007

ONO(Oxide-Nitride-Oxide)구조는 기억소자의 전하보유 능력을 향상시키기 위해 도입된 게이트 절연막이다. 본 연구에서는 ELA(Excimer Laser Annealing)방법으로 비정질 실리콘을 결정화 시켜서 그 위에 NVM(Nonvolatile Memory)소자를 만들어 전기적 특성을 측정하여 결과를 나타내었다. 실험 결과 같은 크기의 $V_D$에서 $V_G$를 조절함으로써 $I_D$의 크기를 조절할 수 있었다. $V_G-I_D$ Graph에서는 $I_{on}$과 $I_{off}$, 그리고 Threshold Voltage를 알 수 있었다. $I_{on}/I_{off}$ Ratio는 $10^3-10^4$이다. $V_G-I_D$ Graph에서는 게이트에 인가하는 Bias의 양을 통해서 Threshold Voltage의 크기를 조절할 수 있었다. 이는 Trap되는 Charge의 양을 임의로 조절할 수 있다는 것을 의미하며, 이러한 Programming과 Erasing의 특성을 이용하여 기억소자로서의 역할을 수행하게 된다.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.07a
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• pp.528-531
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• 2000

Deposition of PZT with UV laser ablatio was applied for realization of thin film sensors and actuators. Deposition rate of more than 20nm/min was attained by pulsed KrF excimer laser deposition, which is fairly better than those obtained by the other methods. Perovskite phase was obtained at room temperature deposition with Fast Atom Beam(FAB) treatment and annealing. Smart MEMS(Micro electro-mechanical system) is now a suject of interest in the field of micro optical devices, micro pumps, AFM cantilever devices etc. It can be fabricated by deposition of PZT thin films and micromachining. PZT films of more than 1 micron thickness is difficult to obtain by conventional methods. This is the reason why we applied excimer laser ablation for thin film deposition. The remanent polarization Pr of 700nm PZT thin film was measured, and the relative dielectric constant was determined to about 900 and the dielectric loss tangent was also measured to be about 0.04. XRD analysis shows that, after annealing at 650 degrees C in 1 hour, the perovskite structure would be formed with some amount of pyrochlore phase, as is the case of the annealing at 750 degrees C in 1 hour.