• 한국신재생에너지학회:학술대회논문집
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• 한국신재생에너지학회 2010년도 추계학술대회 초록집
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• pp.39.2-39.2
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• 2010

In this work we have investigated electrical and optical properties of interface for ITO/Si with shallow doped emitter. The ITO is prepared by DC magnetron sputter on p-type monocrystalline silicon substrate. As an experimental result, The transmittance at 640nm spectra is obtained an average transmittance over 85% in the visible range of the optical spectrum. The energy bandgap of ITO at oxygen flow from 0% to 4% obtained between 3.57eV and 3.68eV (ITO : 3.75eV). The energy bandgap of ITO is depending on the thickness, sturcture and doping concentration. Because the bandgap and position of absorption edge for degenerated semiconductor oxide are determined by two competing mechanism; i) bandgap narrowing due to electron-electron and electron-impurity effects on the valance and conduction bands (> 3.38eV), ii) bandgap widening by the Burstein-Moss effect, a blocking of the lowest states of the conduction band by excess electrons( < 4.15eV). The resistivity of ITO layer obtained about $6{\times}10^{-4}{\Omega}cm$ at 4% of oxygen flow. In case of decrease resistivity of ITO, the carrier concentration and carrier mobility of ITO film will be increased. The contact resistance of ITO/Si with shallow doped emitter was measured by the transmission line method(TLM). As an experimental result, the contact resistance was obtained $0.0705{\Omega}cm^2$ at 2% oxygen flow. It is formed ohmic-contact of interface ITO/Si substrate. The emitter series resistance of ITO/Si with shallow doped emitter was obtained $0.1821{\Omega}cm^2$. Therefore, As an PC1D simulation result, the fill factor of EWT solar cell obtained above 80%. The details will be presented in conference.

• 한국신재생에너지학회:학술대회논문집
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• 한국신재생에너지학회 2008년도 춘계학술대회 논문집
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• pp.33-36
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• 2008

The transient behavior of a passive air breathing direct methanol fuel cell (DMFC) operated on vapor-feeding mode is studied in this paper. It generally takes 30 minutes after starting for the cell response to come to its steady-state and the response is sometimes unstable. A mathematical dynamic one-dimensional model for simulating transient response of the DMFC is presented. In this model a DMFC is decomposed into its subsystems using lumped model and divided into five layers, namely the anodic diffusion layer, the anodic catalyst layer, the proton exchange membrane (PEM), the cathodic catalyst layer and the cathodic diffusion layer. All layers are considered to have finite thickness, and within every one of them a set of differential-algebraic governing equations are given to represent multi-components mass balance, such as methanol, water, oxygen and carbon dioxide, charge balance, the electrochemical reaction and mass transport phenomena. A one-dimensional, isothermal and mass transport model is developed that captures the coupling between water generation and transport, oxygen consumption and natural convection. The single cell is supplied by pure methanol vapor from a methanol reservoir at the anode, and the oxygen is supplied via natural air-breathing at the cathode. The water is not supplied from external source because the cell uses the water created at the cathode using water back diffusion through nafion membrane. As a result of simulation strong effects of water transport were found out. The model analysis provides several conclusions. The performance drop after peak point is caused by insufficiency of water at the anode. The excess water at the cathode makes performance recovery impossible. The undesired crossover of the reactant methanol through the PEM causes overpotential at the cathode and limits the feeding methanol concentration.

• 한국결정성장학회지
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• 제11권3호
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• pp.89-95
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• 2001

규소 결정의 용융 온도 근처인 $1350^{\circ}C$에서 Ar과 $O_{2}$gas를 이용하여 규소 wafer의 열처리시 vacancy ty[e 결함의 거동에 대해 알아보았다. 이 열처리에서는 wafer의 표면보다 wafer내부에서 결함의 용해속도가 매우 높음을 확인하였다. 이는 $1350^{\circ}C$에서는 규소내의 평형산소농도가 대부분의 CZ silicon에서의 산소농도보다 높아 산소의 understaturation현상과 silicon interstitial농도의 영향에 기인된 것으로 예상된다. 열처리 분위기의 영향을 알아보기 위하여 Ar과 $O_{2}$ 분위기에서 열처리한 결과 vacancy type 결함의 용해속도는 wafer의 내부에서는 차이가 없었고, wafer의 표면에서는 Ar이 $O_{2}$의 경우보다 결함의 용해속도가 높았다. $O_{2}$의 경우에는 표면산화막 성장시 유입된 silicon interstitial의 농도가 높아 결함의 용해속도가 떨어지는 것으로 판단된다. 이는 기존 연구에서 예상된 silicon interstitial이 vacancy cluster로 알려진 결정결함의 제거에 기여한다는 예상과는 상반된다. 본 연구의 결과 silicon interstitial의 존재는 void외부 산화막의 용해속도를 늦추어 결함 용해속도를 떨어뜨리는 것으로 예상된다.

• 한국지하수토양환경학회지:지하수토양환경
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• 제14권6호
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• pp.29-34
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• 2009

본 연구에서는 질산염(${NO_3}^-$)과 용존산소(DO)에 의한 생물학적 퍼클로레이트 환원의 저해 그리고 전자공여체를 차지하기 위한 이러한 전자수용체들의 경쟁적 관계를 조사하고자 염소이온프로브(chloride ion probe)를 직접적인 측정방법으로 사용하였다. 퍼클로레이트 환원미생물을 포함하는 플라스크에서 염소이온프로브를 이용하여 염소생성 (=퍼클로레이트 환원)을 모니터링하였다. 2 mM 퍼클로레이트의 생물학적 환원은 2 mM의 질산염에 의해 저해를 받았으며, 염소이온 생성율이 퍼클로레이트가 단독으로 존재하는 경우에 비해 30% 정도 감소하였고, 아세테이트가 제한된 상태이며 질산염과 퍼클로레이트가 공존하는 경우는 염소이온의 생성율이 약 70% 정도 감소하였다. 7-8 mg/L의 용존산소와 2 mM의 퍼클로레이트가 공존하는 조건에서 아세테이트의 공급정도와 상관없이 퍼클로레이트의 생물학적 환원작용이 완벽하게 저해를 받았다.

• 한국수소및신에너지학회논문집
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• 제15권3호
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• pp.201-207
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• 2004

Redox characteristics of metal oxide for hydrogen production by thermochemical water-splitting were investigated. $CuFe_2O_4$ as a redox pair that had a different molar ratio of Cu and Fe were prepared by co-precipitation method. Hydrogen production consisted of water-splitting step and thermal reduction step was performed below 1200K. Redox characteristics of Cu-ferrites were studied using the thermal gravimetric analysis technique. Also, structure change of Cu-ferrite during thermal reduction was investigated using the high temperature controlled XRD. In results, oxygen release of Cu-ferrite during the thermal reduction was initiated at oxygen site combined with Cu. Consequently, oxygen release amount of Cu-ferrite was increased with increase of Cu molar ratio of Cu-ferrite. It was found that thermal reduction of Cu-ferrite was begun at $875^\circ{C}$. It was confirmed that structure of Cu-ferrite was changed to metal and cation excess metal oxide during the thermal reduction step.

• 한국자동차공학회논문집
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• 제13권2호
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• pp.135-141
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• 2005

Nitric oxide(NO) reduction by methanol was investigated over $La_2O_3$ catalysts in the presence and absence of oxygen. In the absence of $O_2$, $CH_3OH$ reduced NO to both $N_2$ and $N_2O$, with selectivity to $N_2$ formation decreasing from 81-88% at 623K to 47-71% at 723 K. With 1.2% $O_2$ in the feed, the rates were 4-8 times higher, but the selectivity to $N_2$ dropped from 50% at 623 K to 9% at 723 K. The specific activities with $La_2O_3$ for this reaction were higher than those for other reductants; for example, at 773 K with hydrogen a specific activity of $34\;{\mu}mol\;NO/sec{\cdot}m^2$ was obtained whereas that for methanol was $638\;{\mu}mol\;NO/sec{\cdot}m^2$. The Arrhenius plots were linear under differential reaction conditions, and the apparant activation energy was consistantly near 15 kcal/mol with $CH_3OH$. Linear partial pressure dependencies based on a power rate law were obtained and showed a near-zero order in $CH_3OH$ and a near-first order in $H_2$.

• Nuclear Engineering and Technology
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• 제33권4호
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• pp.355-364
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• 2001

In order to evaluate and finally optimize the vitrification condition for combustible dry active waste (DAW), dust and gas generation characteristics were investigated for PE, cellulose, and mixed waste Tests were conducted by varying the operation variables such as melter configuration, excess oxygen amount, and waste feeding rate. Results showed that dust generation characteristics were affected by the operation parameters and the melter＇s configuration is the dominant one. For all tested DAWs, dust generation was reduced by increasing the waste feeding rate and the excessive oxygen amount in the melter. Among waste types, dust amount was decreased by the order of mixed wastes, PE, and cellulose. Other parameters such as temperature variation and operation time have also affected the dust generation. The optimum condition for the DAW vitrification was determined as the melter＇s configuration equipped for minimizing the waste dispersion with 20 kg/h of waste feeding rate and 100% of excessive oxygen supply. CO gas concentration in the off-gas was immediately influenced by the combustion state in the melter, but showed similar trend as the dust generation. For the NOx production during the vitrification process, thermal NOx, which is generated from the Post Combustion Chamber (PCC), rather than fuel NOx was assumed to be dominant. The gas cleaning of efficiencies of the PCC, wet scrubber, and Selective Catalytic Reduction system (SCR) were found to be high enough to keep the concentration of pollutants (CO, NOx, SOx, HCI) in the stack below their relevant emission limits.

• 대한화학회지
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• 제37권4호
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• pp.390-395
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• 1993

비화학량론적 화합물 $CeO_2-x의 비호학량 x값과 전기전도도를 600~1200$^{\circ}C$의 온도 범위와 $2{\times}10^{-1}{\sim}1{\times}10^{-4}$ atm이 산소분압 범위에서 측정하였다. 결함생성 엔탈피는 흡열과정임을 보이며 산소분압의존성 도는 1/n 값은 -1/3.18 ∼ -1/3.69까지 변하였다. 전기전도도의 활성화에너지와 1/n값은 각각 1.75 eV 와 -1/4이었다. 비화학량 x값, 전기전도도 $\sigma$값 및 열역학적 데이타로부터 이산화세륨의 결함구조는 1가로 하전된 산소공위이며 과잉금속이 전도성 전자주게의 역할을 하는 n-형 반도체이다.

• Korean Chemical Engineering Research
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• 제44권6호
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• pp.636-643
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• 2006

연속식 SCWO 반응기를 이용하여 DMMP의 초임계수 산화반응을 반응온도 $440{\sim}540^{\circ}C$, 반응압력 242 bar, 체류시간 10~26 초, 과잉산소량 -40~200％의 조건 하에서 수행하였다. 반응온도 $540^{\circ}C$에서 DMMP 분해율은 99.7% 이상으로 높았으며, DMMP의 농도가 증가함에 따라 DMMP 분해율은 증가하였다. 산화제 농도 변화에 따른 분해율은 양론비 이하에서는 현저하게 영향을 받았으나, 양론비 이상에서는 큰 차이가 없었다. DMMP 분해율이 85% 이상인 30개의 실험결과로부터 DMMP의 초임계수 산화반응 속도식을 도출하였다. Pre-exponential factor는 $(1.10{\pm}0.76){\times}10^6$, 반응 활성화에너지는 $90.66{\pm}3.87kJ/mol$, DMMP와 산소에 대한 반응차수는 각각 $1.02{\pm}0.03$, $0.32{\pm}0.03$로 모델에 의한 예측값과 실험값은 잘 일치하였다.

• 한국진공학회지
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• 제9권3호
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• pp.258-262
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• 2000

$YMnO_3$박막은 고주파 스퍼터를 사용하여 Si(100)과 $Y_2O_3$/si(100)기판에 증착하였다. 증착시에 산소 분압의 조건과 열처리 온도는 YMnO$_3$ 박막의 결정성과 그 메모리 윈도우의 특성에 매우 중요한 영향을 주었다. XRD 측정 결과 산소 분압 0%에서 증착후 $870^{\circ}C$에서 1시간 동안 후열처리한 $YMnO_3$ 박막은 c-축을 따라 매우 잘 배향되었음을 확인하였다. 반면 산소분압 20%에서 Si(100)과 $Y_2O_3$/Si(100) 기판위에 증착된 $YMnO_3$박막의 결정화는 XRD측정 결과 $Y_2$O$_3$ peak가 보이는 것으로 보아 YMnO$_3$박막내에 과잉의 $Y_2O_3$가 c-축으로의 배향을 억제하는 것을 알 수 있다. 특히 산소분압 0%에서 증착한 Pt/$YMnO_3/Y_2O_3$/Si 구조에서의 메모리 윈도우 특성은 c-축으로 잘 배향된 결과로 인해 인가전압 2~12V에서 0.67-3.65V이었으며 이는 $Y_2O_3$/si 기판위에 산소분압 20%에서 증착한 박막 (0.19~1.21V)보다 동일한 인가전압에서 3배 정도의 큰 메모리 윈도우 특성을 보였다.