• 한국신재생에너지학회:학술대회논문집
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• 2010.11a
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• pp.39.2-39.2
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• 2010

In this work we have investigated electrical and optical properties of interface for ITO/Si with shallow doped emitter. The ITO is prepared by DC magnetron sputter on p-type monocrystalline silicon substrate. As an experimental result, The transmittance at 640nm spectra is obtained an average transmittance over 85% in the visible range of the optical spectrum. The energy bandgap of ITO at oxygen flow from 0% to 4% obtained between 3.57eV and 3.68eV (ITO : 3.75eV). The energy bandgap of ITO is depending on the thickness, sturcture and doping concentration. Because the bandgap and position of absorption edge for degenerated semiconductor oxide are determined by two competing mechanism; i) bandgap narrowing due to electron-electron and electron-impurity effects on the valance and conduction bands (> 3.38eV), ii) bandgap widening by the Burstein-Moss effect, a blocking of the lowest states of the conduction band by excess electrons( < 4.15eV). The resistivity of ITO layer obtained about $6{\times}10^{-4}{\Omega}cm$ at 4% of oxygen flow. In case of decrease resistivity of ITO, the carrier concentration and carrier mobility of ITO film will be increased. The contact resistance of ITO/Si with shallow doped emitter was measured by the transmission line method(TLM). As an experimental result, the contact resistance was obtained $0.0705{\Omega}cm^2$ at 2% oxygen flow. It is formed ohmic-contact of interface ITO/Si substrate. The emitter series resistance of ITO/Si with shallow doped emitter was obtained $0.1821{\Omega}cm^2$. Therefore, As an PC1D simulation result, the fill factor of EWT solar cell obtained above 80%. The details will be presented in conference.

• 한국신재생에너지학회:학술대회논문집
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• 2008.05a
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• pp.33-36
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• 2008

The transient behavior of a passive air breathing direct methanol fuel cell (DMFC) operated on vapor-feeding mode is studied in this paper. It generally takes 30 minutes after starting for the cell response to come to its steady-state and the response is sometimes unstable. A mathematical dynamic one-dimensional model for simulating transient response of the DMFC is presented. In this model a DMFC is decomposed into its subsystems using lumped model and divided into five layers, namely the anodic diffusion layer, the anodic catalyst layer, the proton exchange membrane (PEM), the cathodic catalyst layer and the cathodic diffusion layer. All layers are considered to have finite thickness, and within every one of them a set of differential-algebraic governing equations are given to represent multi-components mass balance, such as methanol, water, oxygen and carbon dioxide, charge balance, the electrochemical reaction and mass transport phenomena. A one-dimensional, isothermal and mass transport model is developed that captures the coupling between water generation and transport, oxygen consumption and natural convection. The single cell is supplied by pure methanol vapor from a methanol reservoir at the anode, and the oxygen is supplied via natural air-breathing at the cathode. The water is not supplied from external source because the cell uses the water created at the cathode using water back diffusion through nafion membrane. As a result of simulation strong effects of water transport were found out. The model analysis provides several conclusions. The performance drop after peak point is caused by insufficiency of water at the anode. The excess water at the cathode makes performance recovery impossible. The undesired crossover of the reactant methanol through the PEM causes overpotential at the cathode and limits the feeding methanol concentration.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.11 no.3
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• pp.89-95
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• 2001

The CZ-silicon crystal was annealed at $1350^{\circ}C$ to dissolve the vacancy type grown-in defects. A this temperature, the equilibrium concentration of the oxygen in the silicon crystal is around $1.7{\times}10^{18}$ which induces the oxygen undersaturation in the silicon crystal. This situation results in the faster dissolution of the grown-in defects in the bulk of the silicon wafer than near the surface. This indicates the possibility that the presence of the higher concentration of silicon interstitial hinders the dissolution of the grown-in defects, which were known to compose of the vacancy clusters with surrounding silicon oxide film. This expectation was confirmed by the observation that the slower dissolution of the grown-in defects near the surface of the silicon wafer in the oxygen atmosphere than in the argon atmosphere. This result is quite opposite to the previous argument hat presence of the excess silicon interstitial leads to faster dissolution of the vacancy type defects.

• Journal of Soil and Groundwater Environment
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• v.14 no.6
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• pp.29-34
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• 2009

In this study, a chloride ion probe as a direct measurement for perchlorate reduction was used to determine whether biological perchlorate reduction was inhibited by other electron acceptors ($O_2$ and ${NO_3}^-$) and to investigate competition of electron acceptors for using electron donors. Profiles of chloride production (= perchlorate reduction) in flasks containing perchlorate reducing populations were monitored by a chloride ion probe. Biological reduction of 2 mM perchlorate was inhibited by 2 mM nitrate that chloride production rate was decreased by 30% compared to perchlorate used as the only electron acceptor and chloride production rate was decreased by 70% when acetate was limited. Reduction of 2mM perchlorate was completely inhibited by oxygen at 7~8 mg/L, regardless of acetate excess / limitation.

• Journal of Hydrogen and New Energy
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• v.15 no.3
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• pp.201-207
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• 2004

Redox characteristics of metal oxide for hydrogen production by thermochemical water-splitting were investigated. $CuFe_2O_4$ as a redox pair that had a different molar ratio of Cu and Fe were prepared by co-precipitation method. Hydrogen production consisted of water-splitting step and thermal reduction step was performed below 1200K. Redox characteristics of Cu-ferrites were studied using the thermal gravimetric analysis technique. Also, structure change of Cu-ferrite during thermal reduction was investigated using the high temperature controlled XRD. In results, oxygen release of Cu-ferrite during the thermal reduction was initiated at oxygen site combined with Cu. Consequently, oxygen release amount of Cu-ferrite was increased with increase of Cu molar ratio of Cu-ferrite. It was found that thermal reduction of Cu-ferrite was begun at $875^\circ{C}$. It was confirmed that structure of Cu-ferrite was changed to metal and cation excess metal oxide during the thermal reduction step.

• Transactions of the Korean Society of Automotive Engineers
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• v.13 no.2
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• pp.135-141
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• 2005

Nitric oxide(NO) reduction by methanol was investigated over $La_2O_3$ catalysts in the presence and absence of oxygen. In the absence of $O_2$, $CH_3OH$ reduced NO to both $N_2$ and $N_2O$, with selectivity to $N_2$ formation decreasing from 81-88% at 623K to 47-71% at 723 K. With 1.2% $O_2$ in the feed, the rates were 4-8 times higher, but the selectivity to $N_2$ dropped from 50% at 623 K to 9% at 723 K. The specific activities with $La_2O_3$ for this reaction were higher than those for other reductants; for example, at 773 K with hydrogen a specific activity of $34\;{\mu}mol\;NO/sec{\cdot}m^2$ was obtained whereas that for methanol was $638\;{\mu}mol\;NO/sec{\cdot}m^2$. The Arrhenius plots were linear under differential reaction conditions, and the apparant activation energy was consistantly near 15 kcal/mol with $CH_3OH$. Linear partial pressure dependencies based on a power rate law were obtained and showed a near-zero order in $CH_3OH$ and a near-first order in $H_2$.

• Nuclear Engineering and Technology
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• v.33 no.4
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• pp.355-364
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• 2001

In order to evaluate and finally optimize the vitrification condition for combustible dry active waste (DAW), dust and gas generation characteristics were investigated for PE, cellulose, and mixed waste Tests were conducted by varying the operation variables such as melter configuration, excess oxygen amount, and waste feeding rate. Results showed that dust generation characteristics were affected by the operation parameters and the melter＇s configuration is the dominant one. For all tested DAWs, dust generation was reduced by increasing the waste feeding rate and the excessive oxygen amount in the melter. Among waste types, dust amount was decreased by the order of mixed wastes, PE, and cellulose. Other parameters such as temperature variation and operation time have also affected the dust generation. The optimum condition for the DAW vitrification was determined as the melter＇s configuration equipped for minimizing the waste dispersion with 20 kg/h of waste feeding rate and 100% of excessive oxygen supply. CO gas concentration in the off-gas was immediately influenced by the combustion state in the melter, but showed similar trend as the dust generation. For the NOx production during the vitrification process, thermal NOx, which is generated from the Post Combustion Chamber (PCC), rather than fuel NOx was assumed to be dominant. The gas cleaning of efficiencies of the PCC, wet scrubber, and Selective Catalytic Reduction system (SCR) were found to be high enough to keep the concentration of pollutants (CO, NOx, SOx, HCI) in the stack below their relevant emission limits.

• Journal of the Korean Chemical Society
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• v.37 no.4
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• pp.390-395
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• 1993

The x values and electrical conductivities of the nonstoichiometric compounds$ CeO_{2-x} have been measured in a temperature range from 600 to 1200$^{\circ}C$ under oxygen partial pressure of $2{\times}10^{-1}{\sim}1{\times}10^{-4}$ atm. The enthalpy of the defect formation shows an endothermic process with the oxygen partial pressure dependence (1/n value) of -1/3.18 ∼ -1/3.69. The activation energy and 1/n value for the electrical conductivity are estimated as 1.75 eV and -1/4, respectively. According to the x values, the $\sigma$ values, and the thermodynamic data, the defect structure of the ceria seems to be the formation of singly charged negative oxygen vacancies. The n-type semiconducting behaviors could be explained by the presence of excess metals in the lattice as the conduction electron donor.

• Korean Chemical Engineering Research
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• v.44 no.6
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• pp.636-643
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• 2006

Supercritical water oxidation of DMMP using continuous flow reactor was studied at temperature ranging from 440 to $540^{\circ}C$ and a fixed pressure of 242 bar. The range of residence times in the reactor was from 10 to 26 s, and oxygen excess value varied from -40 to 200%. Destruction efficiencies (DE) of DMMP were greater than 99.7% at $540^{\circ}C$, and increased as the DMMP concentrations were increased. DE of DMMP were significantly affected by oxygen concentration under stoichiometric amount, but showed little difference over stoichiometric amount. On the basis of 30 data with conversions greater than 85%, kinetic correlations for the DE of DMMP were developed. The pre-exponential factor was $(1.10{\pm}0.76){\times}10^6$, and the activation energy was $90.66{\pm}3.87kJ/mol$, and the reaction orders for DMMP and oxygen were $1.02{\pm}0.03$, $0.32{\pm}0.03$, respectively. The model predictions agreed well with the experimental data.

• Journal of the Korean Vacuum Society
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• v.9 no.3
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• pp.258-262
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• 2000

$YMnO_3$thin films are deposited on Si(100) and $Y_2O_3/Si(100)$ substrate by radio frequency sputtering. The deposition condition of oxygen partial pressure and annealing temperature have significant influences on the preferred orientation of $YMnO_3$film and the size of memory window. The results of x-ray diffraction show that the film deposited in the oxygen partial pressure of 0% is highly oriented along c-axis after annealing at $870^{\circ}C$ for 1 hr in oxygen ambient. However, the films deposited on Si and $Y_2O_3/Si$ in the oxygen partial pressures of 20% show $Y_2O_3$ peak, the excess $Y_2O_3$ in the $YMnO_3$film suppresses the c-axis oriented crystallization. Especially memory windows of the $Pt/YMnO_3/Y_2O_3/Si$ capacitor are 0.67~3.65 V at applied voltage of 2~12 V, which is 3 times higher than that of the film deposited on $Y_2O_3/Si$ in 20% oxygen (0.19~1.21 V) at the same gate voltage because the film deposited in 0% oxygen is well crystallized along c-axis.