• 제목/요약/키워드: Evaporation Deposition Method

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A study on the oxide semiconductor $[(I_{n2}O_3)_x{\cdot}(S_nO_2)_{1-x}]_{(n)}/Silicon(p)$, solar cells fabricated by two source evaporation (이가열원(二加熱源) 증착법(蒸着法)에 이한 산화물(酸化物) 반도체(半導體) $[(I_{n2}O_3)_x{\cdot}(S_nO_2)_{1-x}]_{(n)}/Silicon(p)$, 태양전지(太陽電池)에 관한 연구(硏究))

  • Jhoon, Choon-Saing;Kim, Yong-Woon;Lim, Eung-Choon
    • Solar Energy
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    • v.12 no.2
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    • pp.62-78
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    • 1992
  • The solar cells of $ITO_{(n)}/Si_{(p)}$, which are ITO thin films deposited and heated on Si wafer 190[$^{\circ}C$], were fabricated by two source vaccum deposition method, and their electrical properties were investigated. Its maximum output is obtained when the com- position of the thin film consist of indium oxide 91[mole %] and thin oxide 9[mole %]. The cell characteristics can be improved by annealing but are deteriorated at temperature above 600[$^{\circ}C$] for longer than 15[min]. Also, we investigated the spectral response with short circuit current of the cells and found that the increasing of the annealing caused the peak shifted to the long wavelength region. And by experiment of the X-ray diffraction, it is shown to grow the grains of the thin film with increasment of annealing temperature. The test results from the $ITO_{(n)}/Si_{(p)}$ solar cell are as follows. short circuit current : Isc= 31 $[mW/cm^2]$ open circuit voltage : Voc= 460[mV] fill factor : FF=0.71 conversion efficiency : ${\eta}$=11[%]. under the solar energy illumination of $100[mW/cm^2]$.

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Studies on the Optical and the Electrical Characterization of Organic Electroluminescence Devices of Europium Complex Fabricated with PVD(Physical Vopor Deposition) Technique (진공 증착법에 의하여 제작한 Europium complex 유기 박막 전기발광소자의 광학적.전기적 특성에 관한 연구.)

  • Lee, Myeong-Ho;Lee, Han-Seong;Kim, Yeong-Gwan;Kim, Jeong-Su
    • The Transactions of the Korean Institute of Electrical Engineers C
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    • v.48 no.5
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    • pp.285-295
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    • 1999
  • Electroluminescent(EL) devices based on organic materials have been of great interest due to their possible applications for large-area flat-panel displays. They are attractive because of their capability of multi-color emission, and low operation voltage. An approach to realize such device characteristics is to use active layers of lanthanide complexes with their inherent extremely sharp emission bands in stead of commonly known organic dyes. In general, organic molecular compounds show emission due to their $\pi$-$\pi*$ transitions resulting in luminescence bandwidths of about 80 to 100nm. Spin statistic estimations lead to an internal quantum efficiency of dye-based EL devices limited to 25%. On the contrary, the fluorescence of lanthanide complexes is based on an intramolecular energy transfer from the triplet of the organic ligand to the 4f energy states of the ion. Therefore, theoretical internal quantum efficiency is principally not limited. In this study, Powders of TPD, $Eu(TTA)_3(phen) and AlQ_3$ in a boat were subsequently heated to their sublimation temperatures to obtain the growth rates of 0.2~0.3nm/s. Organic electrolumnescent devices(OELD) with a structure of $glass substrate/ITO/Eu(TTA)_3(phen)/AI, glass substrate/ITO/TPD/Eu(TTA)_3(phen)/AI and glass substrate/ITO/TPD/Eu(TTA)_3(phen)/AIQ_3AI$ structures were fabricated by vacuum evaporation method, where aromatic diamine(TPD) was used as a hole transporting material, $Eu(TTA)_3(phen)$ as an emitting material, and Tris(8-hydroxyquinoline)Aluminum$(AlQ_3)$ as an electron transporting layer. Electroluminescent(EL) and current density-voltage(J-V) characteristics of these OELDs with various thickness of $Eu(TTA)_3(phen)$ layer were investigated. The triple-layer structure devices show the red EL spectrum at the wavelength of 613nm, which is almost the same as the photoluminescent(PL) spectrum of $Eu(TTA)_3(phen)$.It was found from the J-V characteristics of these devices that the current density is not dependent on the applied field, but on the electric field.

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