• 한국주조공학회지
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• 제20권2호
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• pp.104-109
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• 2000

Three different white cast irons alloyed with Cr, V, Mo and W were prepared in order to study their abrasion wear behavior in as-cast and heat-treated conditions. The specimens were produced using a 15㎏-capacity high frequency induction furnace. Melts were super-heated to $1600^{\circ}C$, and poured at $1550^{\circ}C$ into Y-block pepset molds. Three combinations of the alloying elements were selected so as to obtain the different types of carbides : 3%C-10%Cr-5%Mo-5%W(alloy No. 1: $M_7C_3$ and $M_6C$), 3%C -10%V-5%Mo-5%W(alloy No. 2: MC and $M_2C$) and 3%C-17%Cr-3%V(alloy No. 3: $M_7C_3$ only). A scratching type abrasion test was carried out in the states of as-cast(AS), homogenizing(AH), air-hardening(AHF) and tempering(AHFT). First of all, the as-cast specimens were homogenized at $950^{\circ}C$ for 5h under the vacuum atmosphere. Then, they were austenitized at $1050^{\circ}C$ for 2h and followed by air-hardening in air. The air-hardened specimens were tempered at $300^{\circ}C$ for 3h. 1 ㎏ load was applied in order to contact the specimen with abrading wheel which was wound by 120 mesh SiC paper. The wear loss of the test piece(dimension: $50{\times}50{\times}5$ mm) was measured after one cycle of wear test and this procedure was repeated up to 8 cycles. In all the specimens, the abrasion wear loss was found to decrease in the order of AH, AS, AHFT and AHF states. Abrasion wear loss was lowest in the alloy No.2 and highest in the alloy No.1 except for the as-cast and homogenized condition in which the alloy No.3 showed the highest abrasion wear loss. The lowest abrasion wear loss of the alloy No.2 could be attributed to the fact that it contained primary and eutectic MC carbides, and eutectic $M_2C$ carbide with extremely high hardness. The matrix of each specimen was fully pearlitic in the as-cast state but it was transformed to martensite, tempered martensite and austenite depending upon the type of heat-treatment. From these results, it becomes clear that MC carbide is a significant phase to improve the abrasion wear resistance.

• 한국결정성장학회지
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• 제33권6호
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• pp.234-243
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• 2023

유약원료 내의 ZnO와 SiO₂의 조성과 소성요건에 따라 생성되어 표면으로 석출된 아연결정은 매우 장식성이 높아 선호된다. 하지만 아연결정유약은 대부분 소성온도가 높고 소성온도 폭이 좁아 상용유약으로 사용하기 어렵다. 따라서 본 연구에서는 아연결정유약 제조 시 사용하는 주원료인 frit를 혼용하여 공융효과를 이용하면 일반적인 아연결정유약의 소성온도를 1270℃보다 아연결정의 유약 생성온도를 낮출 수 있을 것으로 기대하였다. 그 결과 Frit 혼용 유약에서는 아연결정의 생성온도가 낮아질 뿐 아니라 1230~1270℃로 소성온도 폭이 넓어져 안정적으로 결정이 생성되는 유약을 개발할 수 있었다. 소성 최고온도를 1230~1250℃로 낮추고 냉각 시 유지온도를 약 950℃까지 낮출 수 있었으며, 경제적으로 효과적인 유약을 개발할 수 있었다. Frit 혼용으로, 유약의 조성에 따라 냉각 시 유지온도는 아연결정의 재결정화에 영향을 주는 것으로 나타났으며 이때 결정형을 조절할 수 있다. 또한, 조핵제의 활용으로 결정 생성 량과 형태의 제어가 가능하다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제43회 하계 정기 학술대회 초록집
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• pp.86-86
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• 2012

The new approaches for silicon solar cell of new concept have been actively conducted. Especially, solar cells with wire array structured radial p-n junctions has attracted considerable attention due to the unique advantages of orthogonalizing the direction of light absorption and charge separation while allowing for improved light scattering and trapping. One-dimenstional semiconductor nano/micro structures should be fabricated for radial p-n junction solar cell. Most of silicon wire and/or pillar arrays have been fabricated by vapour-liquid-solid (VLS) growth because of its simple and cheap process. In the case of the VLS method has some weak points, that is, the incorporation of heavy metal catalysts into the growing silicon wire, the high temperature procedure. We have tried new approaches; one is electrochemical etching, the other is noble metal catalytic etching method to overcome those problems. In this talk, the silicon pillar formation will be characterized by investigating the parameters of the electrochemical etching process such as HF concentration ratio of electrolyte, current density, back contact material, temperature of the solution, and large pre-pattern size and pitch. In the noble metal catalytic etching processes, the effect of solution composition and thickness of metal catalyst on the etching rate and morphologies of silicon was investigated. Finally, radial p-n junction wire arrays were fabricated by spin on doping (phosphor), starting from chemical etched p-Si wire arrays. In/Ga eutectic metal was used for contact metal. The energy conversion efficiency of radial p-n junction solar cell is discussed.