• Restorative Dentistry and Endodontics
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• 제37권3호
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• pp.155-159
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• 2012

Objectives: To investigate the effect of dentin moisture degree and air-drying time on dentin-bond strength of two different one-step self-etching adhesive systems. Materials and Methods: Twenty-four human third molars were used for microtensile bond strength testing of G-Bond and Clearfil $S^3$ Bond. The dentin surface was either blot-dried or air-dried before applying these adhesive agents. After application of the adhesive agent, three different air drying times were evaluated: 1, 5, and 10 sec. Composite resin was build up to 4 mm thickness and light cured for 40 sec with 2 separate layers. Then the tooth was sectioned and trimmed to measure the microtensile bond strength using a universal testing machine. The measured bond strengths were analyzed with three-way ANOVA and regression analysis was done (p = 0.05). Results: All three factors, materials, dentin wetness and air drying time, showed significant effect on the microtensile bond strength. Clearfil $S^3$ Bond, dry dentin surface and 10 sec air drying time showed higher bond strength. Conclusions: Within the limitation of this experiment, air drying time after the application of the one-step self-etching adhesive agent was the most significant factor affecting the bond strength, followed by the material difference and dentin moisture before applying the adhesive agent.

• Current Photovoltaic Research
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• 제1권1호
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• pp.69-72
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• 2013

Combined nano- and micro-wires (CNMWs) Si arrays were prepared using PR patterning and silver-assisted electroless etching. A $POCl_3$ doping process was applied to the fabrication of CNMWs solar cells. KOH solution was used to remove bundles in CNMWs and the etching time was varied from 30 to 240 s. The lowest reflectance of 3.83% was obtained at KOH etching time of 30 s, but the highest carrier lifetime of $354{\mu}s$ was observed after the doping process at 60 s. At the same etching time, a $V_{oc}$ of 574 mV, $J_{sc}$ of $28.41mA/cm^2$, FF of 74.4%, and Eff. of 12.2% were achieved in the CNMWs solar cell. CNMWs solar cells have potential for higher efficiency by improving the post-process and surface-rear side structure.

• 한국세라믹학회지
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• 제37권1호
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• pp.82-89
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• 2000

In lithium silicate photosensitive glass-ceramics, the relationship between lithography time and crystallization, and the effect of addition of mineral acid in etching rate and pattern shape were investigated. Irradiation times for micropatterning were less than 5 minutes in which Ce3+ ions in glass were changed rapidly to Ce4+ with ultra violet light. Overexposure to ultra brought about blot of pattern by diffiraction of light. Addition of mineral acid to HF enhanced etching rate as compared with HF solution only. The addition of H2SO4 especially increased the etching rate by 70%. But the mixed solution also increased the etching rate of the noncrystallized portion of the glass and this resulted in heavy etching. Etching with ultrasonic wave showed higher etching rate than that with the static or fluid method.

• 반도체디스플레이기술학회지
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• 제8권4호
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• pp.1-5
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• 2009

This investigation is applied Taguchi method and the analysis of variance(ANOVA) to the reactive ion etching(RIE) characteristics of $SiO_2$ film coated on a wafer with Experimental Analysis and Optimization of $CF_4/O_2$ Plasma Etching Process mixture. Plans of experiments via nine experimental runs are based on the orthogonal arrays. A $L_9$ orthogonal array was selected with factors and three levels. The three factors included etching time, RF power, gas mixture ratio. The etching rate of the film were measured as a function of those factors. In this study, the etching thickness mean and uniformity of thickness of the RIE are adopted as the quality targets of the RIE etching process. The partial factorial design of the Taguchi method provides an economical and systematic method for determining the applicable process parameters. The RIE are found to be the most significant factors in both the thickness mean and the uniformity of thickness for a RIE etching process.

• 대한치과보철학회지
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• 제39권2호
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• pp.184-196
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• 2001

The objective of this study was to investigate the influence of resin cements and ceramic etching on shear bond strength of Empress 2 ceramic and observe the change of microstructure of ceramic according to etching time. Sixty-six square ceramic specimens($6{\times}6{\times}1.5mm$) were prepared. 6 specimens were etched with different etching times(0, 10, 20, 30, 40 and 60 seconds) and observed by means of a scanning electron microscope(SEM). Other sixty specimens were divided into 6 groups with 10 specimens in each group. 3 groups were etched with 4% hydrofluoric acid and each groups was bonded with 3 resin cements(Variolink II, Super-Bond C&B, Panavia F). Each specimen was subjected to a shear load in an Instron at a cross-head speed of 0.5mm/min and was observed with SEM after mechanical testing to establish modes of failure. The results were as follows : 1. Within etched groups, Variolink II and Super-Bond C&B exhibited significantly greater bonding strengths than Panavia F(p<0.05) 2. Bond strength of etching groups had three to five times greater than that of no-etching groups. 3. All of no-etching groups showed adhesive failure and etching groups mostly showed mixed failure. And, 20-second etching specimen showed the most distinct lithium disilicate crystal. so it is considered that 20-second etching is optimal time for bonding.

• 대한소아치과학회지
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• 제10권1호
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• pp.85-93
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• 1983

In one group that tested for the effects of grinding and etching on the deciduous teeth, S.E.M. examination on the ground or unground labial surface of deciduous maxillary central incisors were made after etching procedure with 40% phosphoric acid for 60 secs., 120 secs., 180 sees. each. In another group that tested for the degree of resin penetration to the ground and etched deciduous teeth, composite resin application was done to the ground deciduous maxillary central incisors that had been acid-etched for 30 secs., 60 secs., 90 sees., 120 sees., 180 secs. each. The tooth-resin specimens were cut at the middle 1/3 of the crown by 2mm thickness, and the adjacent tooth materials were demineralized by 10% hydrochloric acid, the author observed the tags of the resin replica with S.E.M.. Following results were obtained. 1. After 40% phosphoric acid etching, the unground deciduous enamel surface showed various types of etching pattern. 2. For the formation of regular micropores on deciduous enamel surface by acid etching with 40% phosphoric acid, the time over 120 secs. should be requested. 3. After 40% phosphoric acid etching, the ground deciduous enamel surface showed the same etching pattern that has been a preferential removal of prism peripheries despite different etching time. 4. On the ground group that etched over 60 secs. to 180 secs., the length of tags was $5{\mu}m$ to $8{\mu}m$, with a mean of $7{\mu}m$.

• 한국진공학회:학술대회논문집
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• 한국진공학회 1999년도 제17회 학술발표회 논문개요집
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• pp.65-65
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• 1999

Dry etching technique provides more easy controllability on the etch profile such as anisotropic etching than wet etching process and the results of lots of researches on the characterization of various plasmas or ion beams for semiconductor etching have been reported. Chlorine-based plasmas or chlorine ion beam have been often used to etch several semiconductor materials, in particular Si-based materials. We have studied the effect of He flow rate on the Si and SiO2 dry etching using chlorine-based plasma. Experiments were performed using reactive ion etching system. RF power was 300W. Cl2 gas flow rate was fixed at 58.6 sccm, and the He flow rate was varied from 0 to 120 sccm. Fig. 1 presents the etch depth of si layer versus the etching time at various He flow rate. In case of low He flow rate, the etch rate was measured to be negligible for both Si and SiO2. As the He flow increases over 30% of the total inlet gas flow, the plasma state becomes stable and the etch rate starts to increase. In high Ge flow rate (over 60%), the relation between the etch depth and the time was observed to be nearly linear. Fig. 2 presents the variation of the etch rate depending on the He flow rate. The etch rate increases linearly with He flow rate. The results of this preliminary study show that Cl2/He mixture plasma is good candidate for the controllable si dry etching.

• 한국전기전자재료학회논문지
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• 제18권3호
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• pp.206-211
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• 2005

The device makers want to make higher density chips on the wafer through scale-down. The change of WSix/poly-Si gate film thickness is one of the key issues under 100 nm device structure. As a new device etching process is applied, end point detection(EPD) time delay was occurred in DPS+ poly chamber of Applied Materials. This is a barrier of device shrink because EPD time delay made physical damage on the surface of gate oxide. To investigate the EPD time delay, the experimental test combined with OES(Optical Emission Spectroscopy) and SEM(Scanning Electron Microscopy) was performed using patterned wafers. As a result, a EPD delay time is reduced by a new chamber seasoning and a new wavelength line through plasma scan. Applying a new wavelength of 252 nm makes it successful to call corrected EPD in WSix/poly-Si stack-down gate etching in the DPS+ poly chamber for the current and next generation devices.

• 한국전기전자재료학회논문지
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• 제21권7호
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• pp.594-598
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• 2008

The metal catalyst particles which there is as impurities on a tip part of carbon nanotube (CNT) are not good to apply it to a nano-electronic device. It was very important the opening of CNT-tip to fix a target bio material and a material to accept in CNT in a biosensor, so we performed $HNO_3$ wet etching to remove the metal catalyst particle which there was on a tip part of CNT grown up in the study and observed the opened CNT-tip with etching time. We synthesized the CNTs using a HF-PECVD method and choses the CNT length of 700 nm for the application of nano-electronic device such as a biosensor etc.. We observed the opened CNT-tip with wet etching times of $HNO_3$ (10, 30, 60 min). From the results, we observed that the CNT-tip was opened with the increase of wet etching time lively. In case of CNTs etched during 60 min, we confirmed that there was not the ratio of Ni included in CNTsI as catalyst. Conclusively, in the case of CNT etched for 60 minutes, it is completely good for application of a biosensor and, in addition, the metal-free CNTs will contribute to the application of other nanoelectronic devices.

• 한국전기전자재료학회논문지
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• 제17권7호
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• pp.782-787
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• 2004

Superconducting flux flow transistor (SFFT) is based on a control of the Abrikosov vortex flowing along a channel. The induced voltage by moving of the Abrikosov vortex in an SFFT is greatly affected by the thickness, the width, and the length of channel. In order to fabricate a reproducible channel in the SFFT, we studied the variation of the critical characteristics of ${YBa}_2{Cu}_3{O}_7-\delta(YBCO)$ thin films with the etching time using ICP (Inductively coupled plasma) system. From the simulation, it was certified that the vortex velocity was increased in a low pinning energy at channel width 0,5 mm. The surfaces of YBCO thin film were etched by ICP etching system. We observed the etched channel surfaces by AFM (Atomic Force Microscope) and measured the critical current density with etching time. As a measured results, the etching thickness of channel should be optimized to fabricated a flux flow transistor with specified characteristics.