• Proceedings of the Korean Society For Composite Materials Conference
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• 1999.11a
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• pp.36-39
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• 1999

Steel tire cords were coated via RF Plasma Polymerization of acetylene in order to enhance adhesion to rubber compounds. Adhesion of tire cords was measured by TACT as a function of plasma polymerization and argon etching conditions such as power, treatment time and chamber pressure. Tested tire cords were analysed by SEM to elucidate the adhesion mechanism. The highest adhesion values were obtained with argon etching condition at 90W, 10min, 30mtorr followed by acetylene plasma polymerization condition at 10W, 30sec., 30mtorr. In SEM analysis, the plasma polymerized tire cord at the optimized condition showed 100% rubber coverage as observed from brass-plated steel tire cords.

• Proceedings of the Materials Research Society of Korea Conference
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• 2009.05a
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• pp.38.1-38.1
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• 2009

Plasma etching is an essential process for electronic device industries and the particulate contamination during plasma etching has been interested as a big issue for the yield of productivity. The oxynitride glasses have a merit to prevent particulate contamination due to their amorphous structure and plasma etching resistance. The YSiAlON oxynitride glasses with increasing nitrogen content were manufactured. Each oxynitride glasses were fluorine-plasma etched and their plasma etching rate and surface roughness were compared with reference materials such as sapphire, alumina and quartz. The reinforcement mechanism of plasma etching resistance of the YSiAlON glasses studied by depth profiling at plasma etched surface using electron spectroscopy for chemical analysis. The plasma etching rate decreased with nitrogen content and there was no selective etching at the plasma etched surface of the oxynitride glasses. The concentration of silicon was very low due to the generation of SiF4 very volatile byproduct and the concentration of aluminum and yttrium was relatively constant. The elimination of silicon atoms during plasma etching was reduced with increasing nitrogen content because the content of the nitrogen was constant. And besides, the concentration of oxygen was very low on the plasma etched surface. From the study, the plasma etching resistance of the glasses may be improved by the generation of nitrogen related structural groups and those are proved by chemical composition analysis at plasma etched surface of the YSiAlON oxynitride glasses.

• The Journal of Advanced Prosthodontics
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• v.5 no.4
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• pp.479-484
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• 2013

PURPOSE. The aim of this study was to evaluate the effects of additional acid etching and curing mechanism (light-curing or self-curing) of a composite resin on the dentin bond strength and compatibility of one-step self-etching adhesives. MATERIALS AND METHODS. Sixteen human permanent molars were randomly divided into eight groups according to the adhesives used (All-Bond Universal: ABU, Clearfil S3 Bond: CS3), additional acid etching (additional acid etching performed: EO, no additional acid etching performed: EX), and composite resins (Filtek Z-250: Z250, Clearfil FII New Bond: CFNB). Group 1: ABU-EO-Z250, Group 2: ABU-EO-CFNB, Group 3: ABU-EX-Z250, Group 4: ABU-EX-CFNB, Group 5: CS3-EO-Z250, Group 6: CS3-EO-CFNB, Group 7: CS3-EX-Z250, Group 8: CS3-EX-CFNB. After bonding procedures, composite resins were built up on dentin surfaces. After 24-hour water storage, the teeth were sectioned to make 10 specimens for each group. The microtensile bond strength test was performed using a microtensile testing machine. The failure mode of the fractured specimens was examined by means of an optical microscope at ${\times}20$ magnification. The data was analyzed using a one-way ANOVA and Scheffe's post-hoc test (${\alpha}$=.05). RESULTS. Additional etching groups showed significantly higher values than the no additional etching group when using All-Bond Universal. The light-cured composite resin groups showed significantly higher values than the self-cured composite resin groups in the Clearfil S3 Bond. CONCLUSION. The additional acid etching is beneficial for the dentin bond strength when using low acidic one-step self-etch adhesives, and low acidic one-step self-etch adhesives are compatible with self-cured composite resin. The acidity of the one-step self-etch adhesives is an influencing factor in terms of the dentin bonding strength and incompatibility with a self-cured composite resin.

• Proceedings of the IEEK Conference
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• 1999.06a
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• pp.942-945
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• 1999

In this work, we proposed Proper etching algorithm for ultra-large scale integrated circuit device and simulated etching process using the proposed algorithm in the case of ICP (inductive coupled plasma) 〔1〕source. Until now, many algorithms for etching process simulation have been proposed such as Cell remove algorithm, String algorithm and Ray algorithm. These algorithms have several drawbacks due to analytic function; these algorithms are not appropriate for sub 0.1 ${\mu}{\textrm}{m}$ device technologies which should deal with each ion. These algorithms could not present exactly straggle and interaction between Projectile ions and could not consider reflection effects due to interactions among next projectile ions, reflected ions and sputtering ions, simultaneously In order to apply ULSI process simulation, algorithm considering above mentioned interactions at the same time is needed. Proposed algorithm calculates interactions both in plasma source region and in target material region, and uses BCA (binary collision approximation4〕method when ion impact on target material surface. Proposed algorithm considers the interaction between source ions in sheath region (from Quartz region to substrate region). After the collision between target and ion, reflected ion collides next projectile ion or sputtered atoms. In ICP etching, because the main mechanism is sputtering, both SiO$_2$ and Si can be etched. Therefore, to obtain etching profiles, mask thickness and mask composition must be considered. Since we consider both SiO$_2$ etching and Si etching, it is possible to predict the thickness of SiO$_2$ for etching of ULSI.

• Journal of the Korean institute of surface engineering
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• v.22 no.2
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• pp.62-68
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• 1989

Pb2+ ino, added in ctching sohing, is electrodeposited on a alumiunm foil for electrolycic condenser to promote its capacitance. In addition, several factoral factors in etching process are varied to examine how they change the capacitance of the condenser. The capacitance of the condenser made of 0.1 ppm pb electrodeposited aluminum foil is enhanced about 20% than of conventional ane. It is thought out that the enhanement is the result of the act of PbO2, which existed for the conveting of electrodeposited Pb, as a promoter tunnel etching of aluminum foil.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.20 no.10
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• pp.846-851
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• 2007

In this work, the etching characteristics of $Ge_2Sb_2Te_5(GST)$ thin films were investigated using an inductively coupled plasma (ICP) of $Cl_2/Ar$ gas mixture. To analyze the etching mechanism, an optical emission spectroscopy (OES) and surface analysis using X-ray photoelectron spectroscopy (XPS) were carried out. The etch rate of the GST films decreased with decreasing Ar fraction. At the same time, high selective etch rate over $SiO_2$ films was obtained and the selectivity over photoresist films decreased with increasing the he fraction. From XPS results, we found that Te halides were formed at the etching surface and Te halides limited the etch rate of the GST films.

• Transactions on Electrical and Electronic Materials
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• v.12 no.3
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• pp.106-109
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• 2011

We investigated the etching characteristics of titanium nitride (TiN) thin film in $BCl_3$/Ar inductively coupled plasma. The etching parameters were the gas mixing ratio, radio frequency (RF) power, direct current (DC)-bias voltages and process pressures. The standard conditions were as follows: total flow rate = 20 sccm, RF power = 500 W, DC-bias voltage = -100 V, substrate temperature = $40^{\circ}C$, and process pressure = 15 mTorr. The maximum etch rate of TiN thin film and the selectivity of TiN to $Al_2O_3$ thin film were 54 nm/min and 0.79. The results of X-ray photoelectron spectroscopy showed no accumulation of etch byproducts from the etched surface of TiN thin film. The TiN film etch was dominated by the chemical etching with assistance by Ar sputtering in reactive ion etching mechanism, based on the experimental results.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.11a
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• pp.259-262
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• 2003

Superconducting flux flow transistor(SFFT) is based on a control of the Abrikosov vortex flowing along a channel. The induced voltage by moving of the Abrikosov vortex in SFFT is greatly affected by the thickness and width, of channel. In order to fabricate a reproducibility channel in SFFT, we have researched the variation of the critical characteristics of YBCO thin films with the etching time using ICP(Inductively coupled plasma) system. It was certified that the velocity of vortex decreased with increasing the width of channel and was saturated faster in low bias from a simulation. An etching mechanism of YBCO thin films by ICP system was also certified by AFM(Atomic Force Microscope) and by measuring the critical current density with etching time. As measurement result, we could analyze that we should optimize the etching thickness of channel part to construct a flux flow transistor with desired characteristics.

• Journal of the Korean institute of surface engineering
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• v.47 no.3
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• pp.128-136
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• 2014

In the present study, we successfully developed an eco-friendly chemical etching solution and proper condition for plating on ABS material. The mechanism of forming Ni plating layer on ABS substrate is known as following. In general, the etching solution used for the etching process is a solution of chromic acid and sulfuric acid. The etching solution is given to the surface resulting in elution of butadiene group, so-called anchor effect. Such a rough surface can easily adsorb catalyst resulting in the increase of adhesion between ABS substrate and Ni plating layer. However a use of chromic acid is harmful to environment. It is, therefore, essential to develop a new alternative solution. In the present study, we proposed an eco-friendly etching solution composed of potassium permanganate, sulfuric acid and phosphoric acid. This solution was testified to observe the surface microstructure and the pore size of electrical Ni plating layer, and the adhesive correlation between deposited layers fabricated by electro Ni plating was confirmed. The result of the present study, the newly developed, eco-friendly etching solution, which is a mixture of potassium permanganate 25 g/L, sulfuric acid 650ml/L and phosphoric acid 250ml/L, has a similar etching effect and adhesion property, compared with the commercially used chromium acid solution in the condition at $70^{\circ}C$ for 5 min.

• Journal of the Korean institute of surface engineering
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• v.48 no.6
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• pp.360-370
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• 2015

As the size of the semiconductor devices shrinks to nanometer scale, the importance of plasma etching process to the fabrication of nanometer scale semiconductor devices is increasing further and further. But for the nanoscale devices, conventional plasma etching technique is extremely difficult to meet the requirement of the device fabrication, therefore, other etching techniques such as use of multi frequency plasma, source/bias/gas pulsing, etc. are investigated to meet the etching target. Until today, various pulsing techniques including pulsed plasma source and/or pulse-biased plasma etching have been tested on various materials. In this review, the experimental/theoretical studies of pulsed plasmas during the nanoscale plasma etching on etch profile, etch selectivity, uniformity, etc. have been summarized. Especially, the researches of pulsed plasma on the etching of silicon, $SiO_2$, and magnetic materials in the semiconductor industry for further device scaling have been discussed. Those results demonstrated the importance of pulse plasma on the pattern control for achieving the best performance. Although some of the pulsing mechanism is not well established, it is believed that this review will give a certain understanding on the pulsed plasma techniques.