• Korean Journal of Materials Research
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• v.23 no.2
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• pp.116-122
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• 2013

For fabricating silicon solar cells with high conversion efficiency, texturing is one of the most effective techniques to increase short circuit current by enhancing light trapping. In this study, four different types of textures, large V-groove, large U-groove, small V-groove, and small U-groove, were prepared by a wet etching process. Silicon substrates with V-grooves were fabricated by an anisotropic etching process using a KOH solution mixed with isopropyl alcohol (IPA), and the size of the V-grooves was controlled by varying the concentration of IPA. The isotropic etching process following anisotropic etching resulted in U-grooves and the isotropic etching time was determined to obtain U-grooves with an opening angle of approximately $60^{\circ}$. The results indicated that U-grooves had a larger diffuse reflectance than V-grooves and the reflectances of small grooves was slightly higher than those of large grooves depending on the size of the grooves. Then amorphous Si:H thin film solar cells were fabricated on textured substrates to investigate the light trapping effect of textures with different shapes and sizes. Among the textures fabricated in this work, the solar cells on the substrate with small U-grooves had the largest short circuit current, 19.20 mA/$cm^2$. External quantum efficiency data also demonstrated that the small, U-shape textures are more effective for light trapping than large, V-shape textures.

• Journal of the Korean Vacuum Society
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• v.19 no.2
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• pp.114-120
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• 2010

Conventional surface texturing in crystalline silicon solar cell have been use wet texturing by Alkali or Acid solution. But conventional wet texturing has the serious issue of wafer breakage by large consumption of wafer in wet solution and can not obtain the reflectance below 10% in multi crystalline silicon. Therefore it is focusing on RIE texturing, one method of dry etching. We developed large scale plasma RIE (Reactive Ion Etching) equipment which can accommodate 144 wafers (125 mm) in tray in order to provide surface texturing on the silicon wafer surface. Reflectance was controllable from 3% to 20% in crystalline silicon depending on the texture shape and height. We have achieved excellent reflectance below 4% on the weighted average (300~1,100 nm) in multi crystalline silicon using plasma texturing with gas mixture ratio such as $SF_6$, $Cl_2$, and $O_2$. The texture shape and height on the silicon wafer surface have an effect on gas chemistry, etching time, RF frequency, and so on. Excellent conversion efficiency of 16.1% is obtained in multi crystalline silicon by RIE process. In order to know the influence of RF frequency with 2 MHz and 13.56 MHz, texturing shape and conversion efficiency are compared and discussed mutually using RIE technology.

• Journal of the Korean Ceramic Society
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• v.42 no.11 s.282
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• pp.749-752
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• 2005

When an electric field higher than a characteristic coercive field is applied to a ferroelectric such as $LiNbO_3$, the orientation of the spontaneous polarization is reversed, which causes the reversal of the sign of odd-rank tensor properties such as electro-optic and nonlinear optic coefficients. A fabrication process of insulator and periodic external field assisted poling of a z-cut $LiNbO_3$ have been optimized for a periodic $180^{\circ}$ phase inversion along z-axis. The poling jig and the poling control system, fully controlled by a computer, for high quality and reproducible PPLN fabrication have been devised. Periodically polarization reversed PPLN was adjusted based on the fabricated thickness of insulator. The poling structure of PPLN was observed under a microscope after etching PPLN samples by an etching solution ($HF:HNO_3$ = 1 : 2) for about 15 min.

• Restorative Dentistry and Endodontics
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• v.9 no.1
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• pp.115-119
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• 1983

The purpose of this study was to compare the solubility of enamel and dentin to an etchant after fluoride application. Specimens were collected from extracted anterior and bicuspid and each tooth was cut into several pieces. These specimen were allocated in 7 group; 1%, 2%, 3% NaF, 1%, 8%, 20% $SnF_2$, and control group. Five specimens in each group was exposed to pre-determined fluoride solution for 3 minutes, and washed with running water. These specimens were etched by Hipol (commercial label) etchant for 30 seconds. Following are the findings obtained through S.E.M. 1. All specimens with acid etching revealed preferential removal of prism periphery leaving prism core. 2. Specimens treated with 1%, 2% NaF solution showed that the shape of prism tip was thin and sharp like a needle. The case of 3% NaF showed rather round shape at prism end. 3.1% of $SnF_2$ case showed similar findings with the control group but 8% and 20% $SnF_2$ case revealed needle shape at the prism and was less clear than NaF case. Preferential removal of prism periphery was partialy observed and un decalcified area is fused to prism forming reidge. 4. Dentine treated by fluoride compound in low concentration showed the orifice of dentinal tubule was clearly enlarged whereas in high concentration the orifice was not widened.

• Current Photovoltaic Research
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• v.5 no.1
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• pp.25-27
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• 2017

Nanoscale textured black silicon has attracted intensive attention due to its great potential as applications in multicrystalline silicon-based solar cells. It absorbs sunlight over a broad range of wavelengths but introduces large recombination centers, non-uniform doping into cell. In this study, we present a metal-assisted chemical etching technique plus alkaline etching process to fabricate nanoscale pyramid structures with optimized condition. To make the structures, silver nanoparticles-loaded mc-Si wafer was submerged into $H_2O_2/HF$ solution first for nanohole texturing the wafer and textured wafer etched again with KOH solution for making nanoscale pyramid structures. The average reflectivity (350-1050 nm) is about 8.42% with anti-reflection coating.

• Journal of Integrative Natural Science
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• v.3 no.3
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• pp.153-156
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• 2010

Oxidation behaviors of porous silicon were investigated by the measurement of area of $SiO_2$ vibrational peaks in FT-IR spectra during thermal oxidation of porous silicon at corresponding temperatures. Visible photoluminescent porous silicon samples were obtained from an electrochemical etch of n-type silicon of resistivity between 1-10 ${\Omega}/cm$. The etching solution was prepared by adding an equal volume of pure ethanol to an aqueous solution of HF. The porous silicon was illuminated with a 300 W tungsten lamp for the duration of etch. Etching was carried out as a two-electrode galvanostatic procedure at applied current density of 200 $mA/cm^2$ for 5 min. The porosity of samples prepared was about 80%. After formation of porous silicon, the samples were thermally oxidized at $100^{\circ}C$, $200^{\circ}C$, $300^{\circ}C$, and $400^{\circ}C$, respectively. The growth rate of $SiO_2$ layer of porous silicon was investigated by using FT-IR spectroscopy. The effect of oxidation of porous silicon was presented.

• Applied Chemistry for Engineering
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• v.8 no.4
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• pp.595-601
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• 1997

The regeneration of the iron powders in the treatment of $FeCl_3$ etching solution containing nickel by ball-mill and ultrasonic treatments has been studied. When the unreacted iron powders were treated twice, the removal efficiency of nickel was 94.0% for the ball-mill treatment and 82.1% for the ultrasonic treatment. But the removal efficiency of nickel was 40.0% for the untreated iron powders. As the treatment time was increased, the particle size of iron powders was decreased for ball-mill treatment and almost not changed for ultrasonic treatment.

• Laser Solutions
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• v.3 no.2
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• pp.35-43
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• 2000

Laser direct patterning of the coated photoresit (PMER-NSG31B) layer was studied to make halftone dots on gravure printing roll. The selective laser hardening of photoresist by Ar-ion laser(wavelength : 333.6nm∼363.8nm) was controlled by the A/O modulator. The coating thickness in the range of 5㎛∼11㎛ could be obtained by using the up-down directional moving device along the vertically located roll. The width, thickness and hardness of the hardened lines formed under laser power of 200∼260㎽ and irradiation time of 4.4∼6.6$\mu$ sec/point were investigated after developing. The hardened width increased according to the increase of coating thickness. Though the hardened thickness was changed due to the effect of the developing solution, the hardened layer showed good resistance to the scratching of 2H pencil. Also, the hardened minimum line widths of 10㎛ could be obtained. The change of line width was also found after etching, and the minimum line widths of 6㎛ could be obtained. The hardened lines showed the good resistance to the etching solution. Finally, the experimental data could be applied to make gravure halftone dots using the developed imaging process, successfully.

• JSTS:Journal of Semiconductor Technology and Science
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• v.13 no.4
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• pp.410-414
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• 2013

We report the wet etching of titanium nickel (TiNi) films for the production of nano-electro-mechanical (NEM) device. $SiO_2$ and $Si_3N_4$ have been selected as sacrificial layers of TiNi metal and etched with polyethylene glycol and hydrofluoric acid (HF) mixed solution. Volume percentage of HF are varied from 10% to 35% and the etch rate of the $SiO_2$, $Si_3N_4$ and TiNi are reported here. Within the various experiment results, 15% HF mixed polyethylene glycol solution show highest etch ratio between sacrificial layer and TiNi metal. Especially $Si_3N_4$ films shows high etch ratio with TiNi films. Wet etching results are measured with SEM inspection. Therefore, this experiment provides a novel method for TiNi in the nano-electro-mechanical device.

• International Journal of Precision Engineering and Manufacturing
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• v.3 no.1
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• pp.26-32
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• 2002

Laser direct patterning of the coated photoresist (PMER-NSG31B) layer was studied to make halftone dots on the gravure printing roll. The selective laser hardening of the photoresist by Ar-ion laser(wavelength: 333.6∼363.8 nm) was controlled by the A/O modulator. The coating thickness in the range of 5∼11㎛ could be obtained by using the up-down directional moving device along the vertically located roll. The width, thickness and hardness of the hardened lines farmed under the laser power of 200∼260mW and irradiation time of 4.4∼6.6 $\mu$ sec/point were investigated after developing. The hardened width increased as the coating thickness increased. Though the hardened thickness was changed due to the effect of the developing solution, the hardened layer showed good resistance to the scratching of 2H pencil. Also, the hardened minimum line width of 10㎛ could be obtained. The change of line width was also found after etching, and the minimum line widths of 6㎛ could be obtained. The hardened lines showed the good resistance to the etching solution. Finally, the experimental data could be applied to make gravure halftone dots using the developed imaging process, successfully.