• Title/Summary/Keyword: Error amplifier

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Asymmetric Saturated 3-Stage Doherty Power Amplifier Using Envelope Tracking Technique for Improved Efficiency (효율 향상을 위해 포락선 추적 기술을 이용한 비대칭 포화 3-Stage 도허터 전력 증폭기)

  • Kim, Il-Du;Jee, Seung-Hoon;Moon, Jung-Hwan;Son, Jung-Hwan;Kim, Jung-Joon;Kim, Bum-Man
    • The Journal of Korean Institute of Electromagnetic Engineering and Science
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    • v.20 no.8
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    • pp.813-822
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    • 2009
  • We have investigated operation of a 1:2:2 asymmetric 3-stage Doherty PA(Power Amplifier) and implemented using the Freescale's 4 W, 10 W PEP LDMOSFETS at 1 GHz. By employing the three peak efficiency characteristics, compared to the two peak N-way Doherty PA, the asymmetric 3-stage Doherty can overcome the serious efficiency degradation along the backed-off output power region and maximize the average efficiency for the modulation signal. To maximize the efficiency characteristic, the inverse class F PA has been designed as carrier and peaking amplifiers. Furthermore, to extract the proper load modulation operation, the adaptive gate bias control signal has been applied to the two peaking PAs based on the envelope tracking technique. For the 802.16e Mobile WiMAX(World Interoperability for Microwave Access) signal with 8.5 dB PAPR(Peak to Average Power Ratio), the proposed Doherty PA has shown 55.46 % of high efficiency at an average output power of 36.85 dBm while maintaining the -37.23 dB of excellent RCE(Relative Constellation Error) characteristic. This is the first time demonstration of applying the saturated PA and adaptive gate bias control technique to the asymmetric 3-stage Doherty PA for the highly efficient transmitter of the base-station application.

Design of X-band Core Chip Using 0.25-㎛ GaAs pHEMT Process (0.25 ㎛ GaAs pHEMT 공정을 이용한 X-대역 코아-칩의 설계)

  • Kim, Dong-Seok;Lee, Chang-Dae;Lee, Dong-Hyun;Yeom, Kyung-Whan
    • The Journal of Korean Institute of Electromagnetic Engineering and Science
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    • v.29 no.5
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    • pp.336-343
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    • 2018
  • We herein present the design and fabrication of a Rx core chip operating in the X-band (10.5~13 GHz) using Win's commercial $0.25-{\mu}m$ GaAs pHEMT process technology. The X-band core chip comprises a low-noise amplifier, a four-bit phase shifter, and a serial-to-parallel data converter. The size is $1.75mm{\times}1.75mm$, which is the state-of-the-art size. The gain and noise figure are more than 10 dB but less than 2 dB, and both the input and output return losses are less than 10 dB. The RMS phase error is less than $5^{\circ}$, and the P1dB is 2 dBm at 12.5 GHz, the performance of which is equivalent to other GaAs core chips. The fabricated core chip was packaged in a QFN package type with a size of $3mm{\times}3mm$ for the convenience of assembly. We confirmed that the performance of the packaged core chip was almost the same as that of the chip itself.

Integrated Circuit of a Peak Detector for Flyback Converter using a 0.35 um CMOS Process (0.35 um CMOS 공정을 이용한 플라이백 컨버터용 피크검출기의 집적회로 설계)

  • Han, Ye-Ji;Song, Han-Jung
    • Journal of the Korea Academia-Industrial cooperation Society
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    • v.17 no.7
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    • pp.42-48
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    • 2016
  • In this paper, a high-precision peak detector circuit that detects the output voltage information of a fly-back converter is proposed. The proposed design consists of basic analog elements with only one operational amplifier and three transistors. Because of its simple structure, the proposed circuit can minimize the delay time of the detection process, which has a strong impact on the precision of the regulation aspect of the fly-back converter. Furthermore, by using an amplifier and several transistors, the proposed detector can be fully integrated on-chip, instead of using discrete circuit elements, such as capacitors and diodes, as in conventional designs, which reduces the production cost of the fly-back converter module. In order to verify the performance of the proposed scheme, the peak detector was simulated and implemented by using a 0.35 m MagnaChip process. The gained results from the simulation with a sinusoidal stimulus signal show a very small detection error in the range of 0.3~3.1%, which is much lower than other reported detecting circuits. The measured results from the fabricated chip confirm the simulation results. As a result, the proposed peak detector is recommended for designs of high-performance fly-back converters in order to improve the poor regulation aspect seen in conventional designs.

Minimal Sampling Rate for Quasi-Memoryless Power Amplifiers (전력증폭기 모델링을 위한 최소 샘플링 주파수 연구)

  • Park, Young-Cheol
    • Journal of the Institute of Electronics Engineers of Korea TC
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    • v.44 no.10
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    • pp.185-190
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    • 2007
  • In this paper, minimum sampling rates and method of nonlinear characterization were suggested for low power, quasi-memoryless PAs. So far, the Nyquist rate of the input signal has been used for nonlinear PA modeling, and it is burdening Analog-to-digital converters for wideband signals. This paper shows that the input Nyquist rate sampling is not a necessary condition for successful modeling of quasi-memoryless PAs. Since this sampling requirement relives the bandwidth requirements for Analog-to-digital converters (ADCs) for feedback paths in digital pre-distortion systems, relatively low-cost ADcs can be used to identify nonlinear PAs for wideband signal transmission, even at severe aliasing conditions. Simulation results show that a generic memoryless nonlinear RF power amplifier with AMAM and AMPM distortion can be successfully identified at any sampling rates. Measurement results show the modeling error variation is less than 0.8dB over any sampling rates.

Design and Analysis of 4D-8PSK-TCM System Considering the Nonlinear HPA Environment (비선형 HPA 환경을 고려한 4D-8PSK-TCM 시스템의 설계 및 분석)

  • An, Changyoung;Ryu, Sang-Burm;Lee, Sang-Gyu;Ryu, Heung-Gyoon
    • The Journal of Korean Institute of Electromagnetic Engineering and Science
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    • v.29 no.4
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    • pp.299-307
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    • 2018
  • Considering a nonlinear high power amplifier(HPA) and a predistorter, we have designed a four-dimensional 8-ary phase shift keying trellis-coded modulation(4D-8PSK-TCM) system, which is recommended for X-band satellite communications. Subsequently, we have evaluated and analyzed the spectrum, constellation characteristics, and BER performance of the system. In satellite communications, owing to the limited power, nonlinear characteristics that determine the operating point of the HPA must be analyzed because the HPA consumes high power. We herein report the design of the 4D-8PSK-TCM system, with efficiencies of 2 and 2.25 bits/channel-symbol. The simulation results confirmed that a 0.35 roll-off value is effective, considering the low peak-to-average power ratio(PAPR) characteristic and the narrow occupation bandwidth of the spectrum. It also confirmed that approximately 15~20 dB of output backoff(OBO) value is required at the HPA when the predistorter is not used, and approximately 1 dB of the OBO value is required when the predistorter is used.

Selective Mapping of Partial Tones (SMOPT) Scheme for PAR Reduction in OFDM Systems (OFDM 시스템에서 PAR을 줄이는 SMOPT 기법)

  • Yoo Seung soo;Yoon Seok ho;Kim Sun yong;Song Iick ho
    • The Journal of Korean Institute of Communications and Information Sciences
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    • v.30 no.4C
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    • pp.230-238
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    • 2005
  • An orthogonal frequency division multiplexing (OFDM) system consists of a number of independently modulated subcarriers and, thus, a high peak-to-average power ratio (PAR) can occur when the subcarriers are added coherently. The high PAR brings such disadvantages as an increased complexity of the analog-to-digital (ADC) and digital-to-analog (DAC) converters and a reduced efficiency of the radio frequency (RF) power amplifier. In this paper, we propose a novel PAR reduction scheme called selective mapping of partial tones (SMOPT). The SMOPT scheme has a reduced complexity, lower sensitivity to peak reduction tones (PRT) positions, and a shorter processing time as compared with the conventional tone reservation (TR) scheme. The performance of the SMOPT scheme is analyzed based on the IEEE 802.1la wireless local area network(WLAM) physical layer model. Numerical results show that the SMOPT scheme outperforms the TR scheme under various scenarios.

Design and Implementation of Optical Receiving Bipolar ICs for Optical Links

  • Nam Sang Yep;Ohm Woo Young;Lee Won Seok;Yi Sang Yeou1
    • Proceedings of the IEEK Conference
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    • 2004.08c
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    • pp.717-722
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    • 2004
  • A design was done, and all characteristic of photodetectr of the web pattern type which a standard process of the Bipolar which Si PIN structure was used in this paper, and was used for the current amplifier design was used, and high-speed, was used as receiving optcal area of high altitude, and the module which had a low dark current characteristic was implemented with one chip with a base. Important area decreases an area of Ie at the time of this in order to consider an electrical characteristic and economy than the existing receiving IC, and performance of a product and confidence are got done in incense. First of all, the receiving IC which a spec, pattern of a wafer to he satisfied with the following electrical optical characteristic that produced receiving IC of 5V and structure are determined, and did one-chip is made. On the other hand, the time when AR layer of double is $Si_{3}N_{4}/SiO_{2}=1500/1800$ has an optical reflectivity of less than $10{\%}$ on an incidence optical wavelength of 660 ,and, in case of photo detector which reverse voltage made with 1.8V runs in 1.65V, an error about a change of thickness is very the thickness that can be improved surely. And, as for the optical current characteristic, about 5 times increases had the optical current with 274nA in 55nA when Pc was -27dBm. A BJT process is used, and receiving IC running electricity suitable for low voltage and an optical characteristic in minimum 1.8V with a base with two phases is made with one chip. IC of low voltage operates in 1.8V and 3.0V at the same time, and optical link receiving IC is going to be implemented

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Design of PFM Boost Converter with Dual Pulse Width Control (이중 펄스 폭을 적용한 PFM 부스트 변환기 설계)

  • Choi, Ji-San;Jo, Yong-Min;Lee, Tae-Heon;Yoon, Kwang-Sub
    • The Journal of Korean Institute of Communications and Information Sciences
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    • v.40 no.9
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    • pp.1693-1698
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    • 2015
  • This paper proposed a PFM(pulse-frequency modulator) boost converter which has dual pulse-width. The PFM boost converter is composed of BGR(band gap voltage reference generating circuit), voltage reference generating circuit, soft-start circuit, error amplifier, high-speed comparator, inductor current sensing circuit and pulse-width generator. Converter has different inductor peak current so it has wider load current range and smaller output voltage ripple. Proposed PFM boost converter generates 18V output voltage with input voltage of 3.7V and it has load current range of 0.1~300mA. Simulation results show 0.43% output voltage ripple at ligh load mode and 0.79% output voltage ripple at heavy load mode. Converter has efficiency 85% at light lode mode and it has maximum 86.4% at 20mA load current.

A Study on the Control System Implementation of Human Body Nerves Signal (인체 신경신호 제어시스템 구현에 관한 연구)

  • Ko, Duck-Young;Kim, Sung-Gon;Choi, Jong-Ho
    • 전자공학회논문지 IE
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    • v.43 no.1
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    • pp.16-24
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    • 2006
  • This paper is aimed to develope of an integrated BCI(Brain Computer Interface System) that make possible for simultaneous multichannel data process and used extra cellular neural activity from the vestibular system instead of electroencephalogram signals for more precision control. The electrical properties pre-amplifier are 47.6 dB of gain, 0.005 % of distortion at 100 Hz, 12M$\Omega$ of input impedance. Window discriminator used two CPU with difference role to increase processing speed so that sampling frequency was 87 kHz. The designed window discriminator has more not only two times in signal resolution power but also ten times in error discrimination power than commericially available discriminator. The proposed method decreases 100 times in amount of integrated data then BCI system during 100 ms.

A 1MHz, 3.3-V Synchornous Buck DC/DC Converter Using CMOS OTAs (CMOS OTA를 이용한 1MHz, 3.3-1 V 동기식 Buck DC/DC 컨버터)

  • Park Kyu-Jin;Kim Hoon;Kim Hee-Jun;Chung Won-Sup
    • Journal of the Institute of Electronics Engineers of Korea SC
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    • v.43 no.5 s.311
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    • pp.28-35
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    • 2006
  • This paper presents a new 3.3-1 V synchronous buck DC/DC converter that employs CMOS operational transconductance amplifiers (OTAs) as circuit-building blocks. An error amplifier OTA in a PWM circuit is compensated for to improve temperature stability. The temperature coefficient of the transconductance gain of the compensated OTA is less than $150\;ppm/^{\circ}C\;over\;0-100^{\circ}C$. The HSPICE simulation results of the $0.3{\mu}m$ standard CMOS technology show that the efficiency of the proposed converter is as high as 80% in the load current range of 40-125 mA. These results show that the proposed converter is adequate for use in battery-operated systems.