• 수산해양교육연구
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• 제10권1호
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• pp.69-78
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• 1998

Thermal sprayed Cu-Ni alloy coating on the carbon steel was carried out impingement erosion-corrosion test and electrochemical corrosion test in the marine environment. The impingement erosion-corrosion behavior and electrochemical corrosion characteristics of substrate(SS400) and thermal sprayed Cu-Ni coating was investigated, and the corrosion control efficiency of Cu-Ni coating to substrate was estimated quantitatively. Main results obtained are as follows : 1) The weight loss rate of Cu-Ni coating layer by the impingement erosion-corrosion compared with substrate was smaller in high specific resistance solution than in low specific resistance solution. 2) The corrosion potential of Cu-Ni coating layer spray coating in the marine environment became more noble than that of substrate. 3) With the lapse of time, corrosion current density of Cu-Ni coating layer became stable, but that of substrate was increased. 4) As the corrosion control efficiency of Cu-Ni coating layer in the marine environment was over 90%, its anti-corrosion characteristics was excellent.

• Corrosion Science and Technology
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• 제23권1호
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• pp.64-71
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• 2024

The objective of this study was to investigate corrosion and cavitation-erosion characteristics of the electroless nickel plating layer with heat treatment. The crystallization temperature of the electroless nickel plating layer was about 410 ℃. The phase transformation energy was confirmed to be 12.66 J/g. With increasing heat treatment temperature, the amorphous electroless nickel plating layer gradually changed to crystalline Ni and Ni₃P. At the same time, the crystal grain size was also increased. Additionally, when heat treatment was performed at a temperature above 400 ℃, NiO phase was observed due to oxidation phenomenon. As a result of the electrochemical polarization experiment, the corrosion resistance of the heat-treated electroless nickel plating layers was superior to that of the as-deposited plating layer. This was because crystal grains became larger and grain boundaries decreased during heat treatment. The cavitation-erosion resistance of heat-treated plating layers tended to be superior to that of as-deposited plating layers due to increased microhardness.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1998년도 추계학술대회 논문집
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• pp.117-120
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• 1998

It is analyzed the erosing process of the polymeric insulator for outdoor use with the inclined plane method. Materials used are the different type of silicone rubber, they have the content of filler and component each other. As the content of filler added to improve the tracking and erosion resistance. It has the difference of electrical performance and erosion rate. The dry-band arc is also the parameter of accelerating erosion, and appear in the form of leakage current, and the activities of leakage current has a close relationship with the surface hydrophobicity. In this paper, the erosion growth is observed by measuring the time from the voltage application to the whole breakdown, and the erosion depth. In addition, it is measured the hydrophobicity and leakage current to be a cause of erosion by the erosion steps, studied SEM, EDX for observing the transformation of surface structure by erosing.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2004년도 추계학술대회 논문집 Vol.17
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• pp.140-143
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• 2004

Chemical mechanical polishing(CMP) is essential technology to secure the depth of focus through the global planarization of wafer. But a variety of defects such as contamination, scratch, dishing, erosion and corrosion are occurred during CMP. Especially, dishing and erosion defects increase the resistance because they decrease the interconnect section area, and ultimately reduce the life time of the semiconductor. Due to this dishing and erosion must be prohibited. The pattern density and size in chip have a significant influence on dishing and erosion occurred over-polishing. Decreasing of abrasive concentration results in advanced pattern selectivity which can lead the uniform removal in chip and decrease of over-polishing. The fixed abrasive pad was applied and tested to reduce dishing and erosion in this paper. Consequently, reduced dishing and erosion was observed in CMP of tungsten pattern wafer with proposed fixed abrasive pad and chemicals.

• 한국정밀공학회지
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• 제22권2호
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• pp.38-45
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• 2005

Chemical mechanical polishing(CMP) has been widely accepted for the planarization of multi-layer structures in semiconductor fabrication. But a variety of defects such as abrasive contamination, scratch, dishing, erosion and corrosion are occurred during CMP. Especially, dishing and erosion defects increase the metal resistance because they decrease the interconnect section area, and ultimately reduce the lift time of the semiconductor. Due to this reason dishing and erosion must be prohibited. The pattern density and size in chip have a significant influence on dishing and erosion occurred by over-polishing. The fixed abrasive pad(FAP) was applied and tested to reduce dishing and erosion in this paper. The abrasive concentration decrease of FAP results in advanced pattern selectivity which can lead the uniform removal in chip and declining over-polishing. Consequently, reduced dishing and erosion was observed in CMP of tungsten pattern wafer with proposed FAP and chemicals.

• 한국주조공학회지
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• 제30권4호
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• pp.142-146
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• 2010

To elucidate the characteristics of cavitation erosion of super duplex stainless steel, a cavitation erosion test, an optical microstructure, a hardness test, and a transmission electron microscope (TEM) analysis were conducted. As aging time at $475^{\circ}C$ increased, the hardness of ferrite phase increased whereas that of austenite phase was nearly constant. The reason why the cavitation erosion resistance increased with an increase of aging time was due to the formation of W-rich phases (${\alpha}$') of a nanometer scale with the high hardness that were precipitated within ${\alpha}$-grains and at ${\alpha}$-grain boundaries during aging, compared with that of the solution annealed alloy.

• 대한지리학회지
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• 제42권1호
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• pp.27-40
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• 2007

하천은 암석의 저항력, 구조 운동, 퇴적물, 유량 등에 의해 다양한 형태로 발전한다 본 연구는 이러한 요인 중에서도, 암석의 침식 저항력에 초점을 두었다. 상 하류간 기반암의 차이가 뚜렷한 어룡천, 흥정천, 두학천, 대화천, 남천천, 구룡천의 6개 하천을 대상으로, GIS를 이용하여, 유역분지 상 하류의 평면 및 종단면 특성을 분석하였다. 화강암 유역은 완만한 경사, 낮은 요형도, 넓은 하곡 면적을 이루며, 편마암 유역은 급한 경사, 높은 요형도, 좁은 하곡 면적을 나타내며, 퇴적암 유역은 본류 경사도와 기복량은 크지만, 나머지는 하천별로 차이가 있다. 여러 가지 형태적 특성 중 상 하류 암석간의 차이가 분명한 본류의 경사, 본류의 요형도, 하계밀도, 하곡의 면적비, 유역의 평균 경사, 유역의 평균 기복을 대상으로, 그 값을 지수화하여, 상 하류 암석의 침식 저항력을 판단하였다. 그 결과, 편마암으로 이루어진 하천의 상류는 침식에 대한 저항력이 높으며, 퇴적암은 상 하류에 관계없이 중간 정도의 저항력을 나타내고, 화강암은 퇴적암과 접한 상류의 경우를 제외하면, 대체로 침식 저항력이 낮다.

• Corrosion Science and Technology
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• 제13권2호
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• pp.70-80
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• 2014

Duplex stainless steels with nearly equal fraction of the ferrite(${\alpha}$) phase and austenite(${\gamma}$) phase have been increasingly used for various applications such as power plants, desalination facilities due to their high resistance to corrosion, good weldability, and excellent mechanical properties. Hyper duplex stainless steel (HDSS) is defined as the future duplex stainless steel with a pitting resistance equivalent (PRE=wt.%Cr+3.3(wt.%Mo+0.5wt.%W)+30wt.%N) of above 50. However, when HDSS is welded with gas tungsten arc (GTA), incorporation of nitrogen in the Ar shielding gas are very important because the volume fraction of ${\alpha}$-phase and ${\gamma}$-phase is changed and harmful secondary phases can be formed in the welded zone. In other words, the balance of corrosion resistance between two phases and reduction of $Cr_2N$ are the key points of this study. The primary results of this study are as follows. The addition of $N_2$ to the Ar shielding gas provides phase balance under weld-cooling conditions and increases the transformation temperature of the ${\alpha}$-phase to ${\gamma}$-phase, increasing the fraction of ${\gamma}$-phase as well as decreasing the precipitation of $Cr_2N$. In the anodic polarization test, the addition of nitrogen gas in the Ar shielding gas improved values of the electrochemical parameters, compared to the Pure Ar. Also, in the erosion-corrosion test, the HDSS welded with shielding gas containing $N_2$ decreased the weight loss, compared to HDSS welded with the Ar pure gas. This result showed the resistance of erosion-corrosion was increased due to increasing the fraction of ${\gamma}$-phase and the stability of passive film according to the addition $N_2$ gas to the Ar shielding gas. As a result, the addition of nitrogen gas to the shielding gas improved the resistance of erosion-corrosion.

• 한국결정성장학회지
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• 제27권2호
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• pp.99-104
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• 2017

저급탄을 가스화하는 반응기에 사용되는 내화물은 고온에서 부식성이 강한 $H_2S$ 가스에 노출되며, 경도나 내마모성과 같은 기계적 특성이 가스에 노출되는 시간이 길어짐에 따라서 떨어진다. 그러나 $H_2S$ 가스에 의한 내화물의 기계적 특성 약화 원인이 아직 잘 알려져 있지 않다. 본 실험에서는 내화도가 다른 두 종류의 케스터블 내화물을 $H_2S$ 농도가 높은 $H_2O/N_2/H_2S$ 혼합가스에 100시간 동안 $900^{\circ}C$에서 노출시키고, 미세구조, 결정상과 내마모 특성 변화를 비교하였다. 혼합가스에 노출되면서 내화물 시편의 무게는 감소하였다. 노출 후 기공률은 감소하고, 내마모 특성은 현저하게 떨어졌다. 부식에 의해서 내화물을 구성하는 상에 변화가 일어났는데, $CaAl_2O_4$와 일부의 $SiO_2$는 사라지고 $CaSO_4{\cdot}2H_2OS$와 $Al_2Si_2O_5(OH)_4$ 상이 나타났다. 내화물의 내마모 특성이 $H_2S$ 가스에 노출된 후에 감소하는 주 원인은 캐스터블 내화물에서 결합제 역할을 하는 $CaAl_2O_4$가 사라지고 기계적 특성이 나쁜 $CaSO_4{\cdot}2H_2OS$가 생성되기 때문인 것으로 생각되었다.

• 한국정밀공학회:학술대회논문집
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• 한국정밀공학회 2001년도 춘계학술대회 논문집
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• pp.1117-1120
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• 2001

Chemical mechanical planarization(CMP) has emerged as the planarization technique of choice in both front-end and back-end integrated circuit manufacturing. Conventional CMP process utilize a polyurethane polishing pad and liquid chemical slurry containing abrasive particles. There have been serious problems in CMP in terms of repeatability and defects in patterned wafers. Since IBM's official announcement on Copper Dual Damascene(Cu2D) technology, the semiconductor world has been engaged in a Cu2D race. Today, even after~3years of extensive R&D work, the End-of-Line(EOL) yields are still too low to allow the transition of technology to manufacturing. One of the reasons behind this is the myriad of defects associated with Cu technology. Especially, dishing and erosion defects increase the resistance because they decrease the interconnection section area, and ultimately reduce the lifetime of the semiconductor. Methods to reduce dishing & erosion have recently been interface hardness of the pad, optimization of the pattern structure as dummy patterns. Dishing & erosion are initially generated an uneven pressure distribution in the materials. These defects are accelerated by free abrasive and chemical etching. Therefore, it is known that dishing & erosion can be reduced by minimizing the abrasive concentration. Minimizing the abrasive concentration by using Ce$O_2$ is the best solution for reducing dishing & erosion and for removal rate. This paper introduce dishing & erosion generating mechanism and a method for developing a semi-rigid abrasive pad to minimize dishing & erosion during CMP.