• 제목/요약/키워드: Erbium

검색결과 224건 처리시간 0.019초

Tunable Channel Spacing of Dual-wavelength Erbium-doped Fiber Ring Laser using a Single Fiber Bragg Grating with Two Coil Heaters

  • Sohn, Kyung-Rak;Kim, Hyung-Pyo
    • Journal of Advanced Marine Engineering and Technology
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    • 제33권1호
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    • pp.153-158
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    • 2009
  • Stable and tunable dual-wavelength erbium-doped fiber ring laser(EDFL) using a single fiber Bragg grating(FBG) and two coil heaters is proposed and demonstrated. Installing two identical coils into a single FBG, the FBG is symmetrically divided into two different portions. While a current supply to the coil, the refractive index of the FBG under the coil is changed. The FBG can operate as a joint of two different FBGs. Due to the thermo-optic effect of a fiber, the resonance wavelength split into two peaks. The spacing between two adjacent channels was changed as much as the difference of heating power. It was tuned up to 3 nm of wavelength under the electrical power with a 1000 mW. Moreover, the lasing wavelength can be individually tuned without influencing to the adjacent channel.

파장변환과 스위칭이 가능한 다파장 어븀 첨가 광섬유 링 레이저 (Tunable and switchable multi-wavelength erbium-doped fiber ring laser)

  • 장현수;이경식
    • 대한전자공학회논문지SD
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    • 제42권7호
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    • pp.13-20
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    • 2005
  • 여러 개의 광섬유격자를 가변하여 파장변환과 스위칭이 가능한 다파장 EDF 링레이저를 제안하였다. 광섬유격자에 인가되는 압력을 변화시킴으로써 EDF 링레이저의 출력파장과 파장간격을 연속적으로 변환시킬 수 있었으며, 편광조절기를 조절하여 EDF 링레이저의 출력파장을 두 파장, 세 파장 또는 네 파장으로 스위칭 할 수 있었다.

Erbium 실리사이드를 이용하여 제작한 n-형 쇼트키장벽 관통트랜지스터의 전기적 특성 (Characteristics of Erbium silicided n-type Schottky barrier tunnel transistors)

  • Moongyu Jang;Kicheon Kang;Sunglyul Maeng;Wonju Cho;Lee, Seongjae;Park, Kyoungwan
    • 대한전자공학회:학술대회논문집
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    • 대한전자공학회 2003년도 하계종합학술대회 논문집 II
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    • pp.779-782
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    • 2003
  • The theoretical and experimental current-voltage characteristics of Erbium silicided n-type Schottky barrier tunneling transistors (SBTTs) are discussed. The theoretical drain current to drain voltage characteristics show good correspondence and the extracted Schottky barrier height is 0.24 eV. The experimentally manufactured n-type SBTTs with 60 nm gate lengths show typical transistor behaviors in drain current to drain voltage characteristics. The drain current on/off ratio is about 10$^{5}$ at low drain voltage regime in drain current to gate voltage characteristics.

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High-Resolution Interrogation Technique for Fiber Bragg crating Sensor Using Long-Period Fiber Grating Pair and Erbium-Doped fiber

  • Jung, Jae-Hoon;Lee, Yong-Wook;Lee, Byoung-Ho
    • Journal of the Optical Society of Korea
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    • 제6권1호
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    • pp.5-12
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    • 2002
  • A novel interrogation scheme to detect fine Bragg wavelength shift using a long period fiber grating pair with erbium-doped fiber inserted between the two gratings is reported. The technique is shown to feature high resolution and much more immunity to temperature perturbation compared to the conventioned Mach-Zehnder interferometer demodulation system. For quasi-static strain measurement, this approach provides high wavelength resolution of 0.05 pm that corresponds to 41.7 ne in strain and $3.8 $\times$ 10^{-3}$$^{\circ}C$ in temperature. This interrogation system is also employed in dynamic measurement to obtain the minimum detectable strain perturbation of ~ 8.76 ne/H $z^{{\frac}{1}{2}}$ at 100 Hz. Moreover, this interrogation system has prominent thermal stability. This thermal stability comes from the fact that two arms of the interferometer, the core and cladding in erbium-doped fiber, are exposed to nearly the same environment .

향상된 되먹임 결합구조를 가진 브릴루엥/어븀 광섬유 레이저에서 연속된 고차 스토크스 신호의 발생 (Cascaded high-order Stokes Generation in Brillouin/Erbium Fiber laser with Enhanced Feedback Coupling)

  • 박갑동;이재형;장준성
    • 한국광학회:학술대회논문집
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    • 한국광학회 2000년도 제11회 정기총회 및 00년 동계학술발표회 논문집
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    • pp.102-103
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    • 2000
  • 최근 광통신 시스템에서는 파장분할다중화(WDM) 방식의 도입으로 인해, 한 개의 레이저 신호를 입사시켜 여러 개의 레이저 신호를 발생시켜 광원으로 사용하는 연구가 활발히 진행되어 왔다. Park et al.[1]은 Erbium Doped Fiber Laser(EDFL)에서 1.1nm 파장간격으로 24라인을 얻었고, Yamashita et al.[2]은 내부 에탈론 구조를 가진 EDFL에서 0.8nm 간격으로 17라인, D.Yu et al.[3]은 반사형 거울과 Circulator를 사용한 Brillouin/Erbium Fiber Laser(BEFL)에서 0.08nm 간격으로 30라인, G.J.Cowle et al.[4]은 Injection-Seed Locking을 이용한 BEFL.에서 0.09nm 간격으로 12라인 그리고 N.S.Kim et al.[5]은 내부 되먹임을 이용한 BEFL에서 0.09nm 간격으로 4라인을 각각 발생시켰다. 여기서 중요한 요소로는 발생된 레이저 신호의 안정성, 각 신호들 간의 파장간격, 레이저 신호의 수 그리고 Peak Intensity 간의 차이 등이 있는데 각 연구방식에 따라 다양한 결과를 보여준다. 본 실험에서는 향상된 되먹임 구조를 가진 BEFL에서 다파장 발생에 관한 연구를 하였다. (중략)

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A Theoretical and Experimental Investigation into Pair-induced Quenching in Bismuth Oxide-based Erbium-doped Fiber Amplifiers

  • Jung, Min-Wan;Shin, Jae-Hyun;Jhon, Young-Min;Lee, Ju-Han
    • Journal of the Optical Society of Korea
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    • 제14권4호
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    • pp.298-304
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    • 2010
  • The pair-induced quenching (PIQ) effect in a highly doped bismuth oxide-based erbium-doped fiber amplifier (EDFA) was theoretically and experimentally investigated. In the theoretical investigation, the bismuth oxide-based EDFA was modeled as a 6-level amplifier system that incorporated clustering-induced concentration quenching, cooperative up-conversion, pump excited state absorption (ESA), and signal ESA. The relative number of paired ions in a highly doped bismuth oxide EDF was estimated to be ~6.02%, determined by a comparison between the theoretical and the experimentally measured gain values. The impacts of the PIQ on the gain and the noise figure were also investigated.

에르븀 첨가 광섬유증폭기의 특성측정 (Characterization of Erbium-Doped Fiber Amplifier)

  • 한정희;이재승;주무정;심창섭
    • 전자공학회논문지A
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    • 제30A권5호
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    • pp.45-51
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    • 1993
  • An erbium doped fiber amplifier(EDFA) pumped by aingle 1.48$\mu$m LD was fabricated, and its gain and noise characteristics were measured. As a signal source, 1548 nm wavelength DFB LD was used. The small signal net gain of the EDFA module was 21.8 dB with maximum gain coefficient 0.7dB/mW for the erbium fiber length of 17.6 m, the pump power of 58 mW, and an input signal power of -25 dBm, respectively. The saturation power of the EDFA was 1 dBm for the input signal power of -5 dBm and the noise figure, measured by using an optical spectrum analyzer, was 5.8 dB for the input signal power of -40 dBm.

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Erbium 도핑된 p-GaSe 단결성의 홀 효과 특성 (Hall-effect Properties of Single Crystal Semiconductor p-GaSe Dopes with $Er^{3+}$)

  • 이우선;김남오;손경춘
    • 한국전기전자재료학회논문지
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    • 제13권1호
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    • pp.1-5
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    • 2000
  • Optical and electrical properties of GaSe:Er\ulcorner single crystals grown by the Bridgenman technique have been investigated by using optical absorption and h\Hall-effect measurement system. The Hall coefficients were mea-sured by using a high impedance electrometer in the temperature range from 360K to 150K. The temperature dependence of hole concentration show the characteristic of a partially compensated p-type semiconductor. Carrier density(N\ulcorner) of GaSe doped with Erbium was measured about 3.25$\times$10\ulcorner [cm\ulcorner] at temperature 300K, which was higher than undoped specimen. Photon energy gap (E\ulcorner) of GaSe:Er\ulcorner specimen was measured about 1.79eV.

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Aluminum을 포함한 삼원화합물 반도체의 합성 및 단결정 성장과 광학적 특성 규명에 관한 연구 II -$ZnAl_2S_4,;\;ZnAl_2Se_4,;\;CdAl_2S_4,;\;CdAl_2Se_4$ 를 중심으로- (Optical properties of undoped, $Co^{2+}-,\; and\; Er^{3+}-doped \;II^B-Al_2-VI^B_4$ single crystals)

  • 김화택;윤창선;김창대;최성휴;진문석;박태영;박광호
    • 한국진공학회지
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    • 제6권1호
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    • pp.50-60
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    • 1997
  • 순수한 $ZnAl_2S_4,;ZnAl_2Se_4,;CdAl_2S_4,;and;CdAl_2Se_4$ 및 cobalt와 erbium을 불순물로 첨가 한 이들 단결정을 화학수송법으로 성장시켰다. 성장된 단결정의 결정구조, 격자상수, 광학적 energy gap, photoluminescence 특성 등을 측정하여 광학적 전이 기구를 규명하였다.

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오븀 첨가 광섬유의 증폭 자발 방출을 이용한 저온 측정 (Cryogenic Temperature Measurement Using Amplified Spontaneous Emission of Erbium-Doped Fiber)

  • 이용욱
    • 전기학회논문지
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    • 제56권11호
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    • pp.1992-1994
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    • 2007
  • In this paper we propose a cryogenic sensor system which can measure the temperature at higher resolution at low temperature using temperature-dependent amplified spontaneous emission of erbium-doped fiber pumped by a 1480 nm laser diode. The measurement resolution of the sensor system could be enhanced through the modulation of injection current of the pump laser diode. The measurement resolution considering the fluctuation of the light source in the sensor system was ${\sim}0.4$ K in the room temperature regime and ${\sim}0.07$ K in the liquid nitrogen temperature regime.