• Journal of the Institute of Electronics Engineers of Korea SD
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• v.40 no.11
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• pp.9-18
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• 2003

Two configurations of Film Bulk Acoustic Wave Resonators with acoustic quater-wave bragg reflector layers are theoretically analyzed using equivalent circuits and the difference of their characteristics are discussed. We compare the characteristics of λ/2 mode to those of ideal FBAR with top and bottom electrode contacting air and the characteristics of λ/4 mode to those of ideal FBAR with top electrode contacting air and bottom electrode clamped. We assume that the piezoelectric film is ZnO, the electrode is A1 and the substrate is Si, ABCD parameters are extracted and input impedance is calculated by converting the equivalent circuit from Mason equivalent circuits to the simplified equivalent circuits that ABCD parameters are extracted possible, From the variation of resonance frequency due to the change of thickness of reflector layers and the variation of electrical Q due to the change of mechanical Q of reflector layers, it is confirmed that the reflector layer just under the bottom electrode have the greatest effect on the varation of resonance frequency and electrical Q. It is shown that the number of reflector layers required for the saturation of electrical Q decreases with the increase of the impedance ratio of reflector layers and electrical Q of λ/2 mode is larger than that of λ/4 mode, Electromechanical coupling factor is independent of the number of layers, The impedance ratio of reflector layers becomes larger as the electromechanical coupling factor becomes larger, The electromechanical coupling factor of the two mode are smaller than those of ideal FBARs because of the trapping of acoustic energy in the reflector layers, The insertion loss of the ladder filter decreases with the increase of the number of reflector layers but the bandwidth is not affected much by the number of reflector layers, As the impedance ratio of reflector layers becomes larger the insertion loss becomes smaller and the bandwidth becomes wider, In our analysis of the two mode, characteristics of λ/2 mode appear to be slightly more favorable than that of λ/4 mode

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.39 no.4
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• pp.41-54
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• 2002

In this study, we have analyzed the effects of the membrane layer and the bragg reflector layers on the resonance characteristics through comparing the characteristics of the membrane type FBAR (Film Bulk Acoustic Wave Resonator) and the one type bragg reflector layers with those of the ideal FBAR with top and bottom electrode contacting air by using equivalent circuit technique. It is assumed that ZnO is used for piezoelectric film, $SiO_2$ are used for membrane layer and low acoustic impedance layer, W are used for the high acoustic reflector layer and Al is used for the electrode. Each layer is considered to have a acoustic propagation loss. ABCD parameters are picked out and input impedance is calculated by converting 1-port equivalent circuit to simplified equivalent circuit that ABCD parameters are picked out possible. From the variation of resonance frequency due to the change of thickness of electrode layers, reflector layers and membrane layer it is confirmed that membrane layer and the reflector layer just under the electrode have the greatest effect on the variation of resonance frequency. From the variation of resonance properties, K and electrical Q with the number of layers, K is not much affected by the number of layers but electrical Q increases with the number of layers when the number of layers is less than seven. The electrical Q is saturated when the number of layers is large than six. The electrical Q is dependent of mechanical Q of reflector layers and membrane layer. Both ladder filter and SCF (Stacked Crystal Filters) show higher insertion loss and out-of-band rejection with the increase of the number of resonators. The insertion loss decreases with the increase of the number of reflector layers but the bandwidth is not much affected by the number of reflector layers. Ladder Filter and SCF with membrane layer show the spurious response due to spurious resonance properties. Ladder filter shows better skirt-selectivity characteristics in bandwidth but SCF shows better characteristics in insertion loss.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.22 no.11
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• pp.1078-1091
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• 2011

In this paper, a triple band-notched UWB antennas using a spiral resonator and a complementary split ring resonator is proposed as two types. The band-rejection characteristic of the designed antenna is analyzed through the structure and equivalent circuit model of spiral resonator and CSRR. The measured results of first type antenna show that a VSWR less than 2 was satisfied with a resonant frequency in the range of 1.16~12 GHz and it can be obtained the band-stop performance at 3.3~3.85 GHz, 5.15~6.1 GHz, and 8.025~8.5 GHz. The measured results of second type antenna show that a VSWR less than 2 was satisfied with this antenna works from 1.79 to 12 GHz and it can be achieved the band-notched performance at 3.3~3.88 GHz, 5.12~5.94 GHz, and 8.025~8.51 GHz. Through the measured results, the designed antenna was satisfied UWB band except for triple notched bands.