• Title/Summary/Keyword: Equivalent Circuit Model

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Wall Voltage Characteristics Simulated Using an Equivalent Circuit Model for AC POPs

  • Kim, Joon-Yub;Lim, Jong-Sik
    • 한국정보디스플레이학회:학술대회논문집
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    • 2003.07a
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    • pp.317-320
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    • 2003
  • As a convenient means for the characterization of the wall voltage and wall charge of AC PDPs during the sustain period, an equivalent circuit model for AC PDPs is presented. The equivalent circuit model for AC PDPs consists of capacitors and thyristors. The equivalent circuit model is based on the physical structure of the AC PDP and the I-V characteristic of the discharge space. This equivalent circuit model can be easily implemented in the standard simulators such as SPICE and can easily simulate the variation of the current, charge and voltage involved in AC PDPs as the supply voltage varies.

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Equivalent Circuit Modeling of Rosen-type Multilayer Piezoelectric Transformer (Rosen형 적층 압전변압기의 등가회로 모델링)

  • Shin, Hoon-Beom;Lee, Yong-Kuk;Yu, Young-Han;Ahn, Hyung-Keun;Han, Deuk-Young
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.19 no.12
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    • pp.1099-1105
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    • 2006
  • In this paper, the equivalent circuit model of a Rosen-type multilayer piezoelectric transformer(MPT) has been proposed based on the Mason's equivalent circuit model and the principle of single layer piezoelectric plate. From the piezoelectric direct and converse effects, the symbolic expressions between the electric inputs and outputs of the MPT have been derived from the equivalent circuit model. A simplified equivalent circuit model of the MPT whose driving part has a single input form has been proposed. The symbolic expressions of the driving part have been derived from the simplified equivalent circuit model and the model was compared with the multi-input equivalent circuit model through the simulation. In the comparisons between the simulation results and the experimental data, output voltage is 630 Vp-p in case of 11-layered MPT and 670 Vp-p for 13-layered MPT over the experiment range. As the load resistance increases, output voltage increases and saturates over $300k{\Omega}$ and the resonant frequency changes from 102 kHz to 103 kHz. The simulation and the experimental results agree well over different load resistances and frequencies.

Compensation of Equivalent Circuit Model of TE011 Mode Cylindrical Cavity Filter

  • Ryu, Nam-Young;Lee, Jeong-Hae
    • Journal of electromagnetic engineering and science
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    • v.2 no.2
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    • pp.100-104
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    • 2002
  • A proper equivalent circuit model for coupling iris has been derived in order to compensate the length of cavity in a $TE_{011}$TEX> mode cylindrical cavity filter. A method to resolve the difference in bandwidth and feature or ripple systematically has been proposed. This method can be applied to other types of waveguide cavity filter.

Equivalent Circuit Model of RF passive components based on its simulated frequency response data (EM Solver 의 주파수 응답 데이터를 이용한 RF 수동 소자의 등가회로 모델링에 관한 연구)

  • Oh, Sang-Bae;Ko, Jae-Hyeong;Han, Hyeong-Seok;Kim, Hyeong-Seok
    • 한국정보통신설비학회:학술대회논문집
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    • 2007.08a
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    • pp.27-30
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    • 2007
  • This paper deals with an equivalent circuit model for RF passive components. Rational functions are obtained from the frequency responses of EM simulation by using Foster canonical partial fraction expressions. The Vector Fitting(VF) and the Adaptive Frequency Sampling(AFS) scheme are also implemented to obtain the rational functions. A passivity enforcement algorithm is applied to ensure the stability of the equivalent circuit model. In order to verify the schemes, S parameters of the equivalent circuit model is compared to those of EM simulation in case of the microstrip line structure with 3 slots in ground.

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New Equivalent Circuit of a Synchronous Machine (동기식의 새로운 등가회로)

  • 박민호;현동석
    • The Transactions of the Korean Institute of Electrical Engineers
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    • v.34 no.11
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    • pp.440-444
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    • 1985
  • Voltage equations of a synchronous machine are derived from the electromagnetic field theory in order to develop a new equivalent circuit model considering core loss. The result from the new equivalent circuit model is superior to that of the conventional one in the analysis of machine performance and characteristics on optimal efficiency control of a synchronous motor.

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Multi-Band Rejection Slot-Shaped DGS and Its Equivalent Circuit Model (다중 대역 슬롯형 DGS와 등가 회로 모델)

  • Woo, Duk-Jae
    • The Journal of Korean Institute of Electromagnetic Engineering and Science
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    • v.21 no.5
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    • pp.537-543
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    • 2010
  • This paper presents a slot-shaped defected ground structure(DGS) which has multi-band rejection property. The proposed structure, in which the spiral slot-shaped defects with different size are aligned in the transverse direction to the guiding direction of the coplanar waveguide(CPW), provides multiple resonance frequencies. Compared with the simulated results, the band rejection characteristic is in good agreement with the measurement. Also, an equivalent circuit model of the proposed structure is presented, where the DGS on the ground plane is modeled as LC-resonators. This resonators are inductively coupled to the signal line through mutual inductance. From the equivalent circuit model, multi-band rejection property was derived.

An Equivalent Circuit Model for a Dumbbell-Shaped DGS Microstrip Line

  • Woo, Duk-Jae;Lee, Taek-Kyung
    • Journal of electromagnetic engineering and science
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    • v.14 no.4
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    • pp.415-418
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    • 2014
  • This paper presents an equivalent circuit model for a dumbbell-shaped defected ground structure (DGS) in a microstrip line. The effects of equivalent circuit elements of a dumbbell-shaped DGS and their magnetic coupling to the host transmission line are modeled as a simple lumped-element circuit. In addition, simple approximate expressions to determine the main circuit parameters for this model are presented. The transfer characteristic calculated by the proposed circuit model is compared with the results of EM simulation and measurement.

Equivalent Circuit Model For Switching Performance of Bipolar Spin Transistor

  • Yong Tae, Kim;Gap Yong, Lee
    • Proceedings of the Korean Society Of Semiconductor Equipment Technology
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    • 2003.12a
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    • pp.182-185
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    • 2003
  • We have suggested an equivalent circuit model for switching performance of bipolar spin transistor composed of a nonmagnetic metal film (N) sandwiched between two ferromagnetic metal films (F1 and F2). The 'ON' or 'OFF' operation of this equivalent circuit model is simulated by depending on the orientation of the magnetization of F1 and F2 rather than the strength of the external magnetic filed. Changing the coupling coefficient, turn number of two inductances, (L1:L2) like a transformer, and parallel variable resistance R4 connected to L2 at the collector region, we can explain the magnetic characteristics and the dependence of magneto resistance ratio on the orientation of spin-polarized electrons.

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Equivalent Circuit Modeling Applying Rational Function Fitting (유리함수 근사를 이용한 등가회로 모델링)

  • Paek, Hyun;Ko, Jae-Hyung;Kim, Kun-Tae;Kim, Hyeong-Seok
    • Journal of The Institute of Information and Telecommunication Facilities Engineering
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    • v.8 no.1
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    • pp.1-5
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    • 2009
  • In this paper, we propose a method that applies Vector Fitting (VF) technique to the equivalent circuit model for RF passive components. These days wireless communication system is getting smaller and smaller. So EMI/EMC is an issue in RF. We can solve PI/SI (Power Integrity/Signal Integrity) that one of EMI/EMC problem apply IFFT for 3D EM simulation multiple with input signal. That is time consuming task. Therefore equivalent circuit model using RF passive component is important. VF schemes are implemented to obtain the rational functions. S parameters of the equivalent circuit model is compared to those of EM simulation in case of the microstrip line structure.

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A New Extraction Method of GaAs/InGaP HBT Small-signal Equivalent Circuit Model Parameters (GaAs/InGaP HBT 소신호 등가회로 모델 파라미터의 새로운 추출방법)

  • 이명규;윤경식
    • Proceedings of the IEEK Conference
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    • 2000.11a
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    • pp.357-360
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    • 2000
  • This paper describes a parameter extraction method for HBT(Heterojunction Bipolar Transistor) equivalent circuit model without measurements of special test structures or numerical optimizations. Instead, all equivalent circuit parameters are calculated analytically from small-signal S-parameters measured under different bias conditions. These values being extracted from the cutoff mode can be used to extract intrinsic parameters at the active mode. This method yields a deviation of about 1.3 % between the measured and modeled S-parameters.

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