• Tunnel and Underground Space
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• v.24 no.6
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• pp.405-417
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• 2014

In a high-level waste repository, the gap fill of the engineered barrier is an important component that influences the performance of the buffer and backfill. This paper reviewed the overseas status of R&D on the gap fill used engineered barriers, through which the concept of the gap fill, manufacturing techniques, pellet-molding characteristics, and emplacement techniques were summarized. The concept of a gap fill differs for each country depending on its disposal type and concept. Bentonite has been considered a major material of a gap fill, and clay as an inert filler. Gap fill was used in the form of pellets, granules, or a pellet-granule blend. Pellets are manufactured through one of the following techniques: static compaction, roller compression, or extrusion-cutting. Among these techniques, countries have focused on developing advanced technologies of roller compression and extrusion-cutting techniques for industrial pellet production. The dry density and integrity of the pellet are sensitive to water content, constituent material, manufacturing technique, and pellet size, and are less sensitive to the pressure applied during the manufacturing. For the emplacement of the gap fill, pouring, pouring and tamping, and pouring with vibration techniques were used in the buffer gap of the vertical deposition hole; blowing through the use of shotcrete technology and auger placement and compaction techniques have been used in the gap of horizontal deposition hole and tunnel. However, these emplacement techniques are still technically at the beginning stage, and thus additional research and development are expected to be needed.

• KSTLE International Journal
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• v.3 no.1
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• pp.60-67
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• 2002

Wear on the tube-to-spring contact is investigated experimentally, The vibration of the tube causes the wear while the springs support it As for the supporting conditions, the contacting normal farce of 5 N,0 N and the gap of 0.1 mm are applied. The gap condition is for considering the influence of simultaneous impacting and sliding on wear. The wear volume and depth decreases in the order of the 5 N,0 N and the gap conditions. This is explained from the contact geometry of the spring, which is convex of smooth contour, The contact shear force is regarded smaller in the case of the gap existence compared with the other conditions. The wear mechanism is considered from SEM observation of the worn surface. The variation of the normal contact traction is analysed using the finite element analysis to estimate the slip displacement range on the contact with consulting the fretting map.

• Corrosion Science and Technology
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• v.10 no.5
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• pp.180-188
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• 2011

In the present study, denting corrosion experiments were performed as a function of crevice gap size (50, 100 and 200 ${\mu}m$) in a solution containing 3,500 ppm NaCl + 0.2 M $CuCl_2$ (pH = 3 adjusted by HCl). The effects of chloride ion concentrations (3, 3,500 and 35,000 ppm as NaCl) were also outlined with two different crevice gap sizes (100, 200 ${\mu}m$). In addition, the effect of NiB on the denting corrosion was also investigated in a solution of 35,000 ppm NaCl + 0.2 M $CuCl_2$ (pH = 3 adjusted by HCl). The results showed that denting rate increased with the increasing crevice gap size at an initial stage and became nearly constant afterwards. As the concentration of chloride ion increased, the denting rate also increased. However, the addition of a NiB powder of 4 g/L in to the acid-chloride solution was observed to suppress the denting rate significantly.

• Proceedings of the KIEE Conference
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• 2002.06a
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• pp.88-93
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• 2002

$Zn_{0.5}Cd_{0.5}Al_{2}Se_{4}$ and $Zn_{0.5}Cd_{0.5}Al_{2}Se_{4}:Co^{2+}$ + single crystals were grown by CTR method. The grown single crystals have defect chalcopyrite structure with lattice constant a= 5.5966A. c= 10.8042${{\AA}}$ for the pure. a= 5.6543${{\AA}}$. c= 10.8205${{\AA}}$ for the Co-doped single crystal. respectively. The optical energy band gap was given as indirect band gap. The optical energy band gap was decreased according to add of Co-impurity. Temperature dependence of optical energy band gap was fitted well to the Varshni equation. From this relation. we can deduced the entropy. enthalpy and heat capacity. Also. we can observed the Co-impurity optical absorption peaks assigned to the $Co^{2+}$ ion sited at the $T_d$ symmetry lattice and we consider that they were attributed to the electron transitions between energy levels of ions.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.16 no.7
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• pp.593-598
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• 2003

In this paper, 3rd overtone mode energy-trapped filter using modified PbTiO$_3$ system ceramics was manufactured to apply for intermediate frequency(IF) SMD type fillet with splitted electrode and gap size. To investigate the effects of splitted electrode and gap size on filter characteristics of 3rd overtone mode energy-trapped filter, ceramic wafers were fabricated by etching splitted rectangular electrode size(b$\times$d) of b=0.4, 0.6, 0.8, 1mm, d=0.3, 0.4, 0.5, 0.6mm and gap size(c) c=0.2, 0.3, 0.4, 0.6mm, respectively. And then, SMD type ceramic filter were fabricated with the size of 3.7$\times$3.1$\textrm{mm}^2$. SMD type ceramic filter with the size of b=0.8mm, d=0.4mm and gap(c)=0.4mm, which showed insertion loss of 2.951dB, 3dB bandwidth of 54.7kHz and 20dB stop bandwidth of 129.27kHz, was suitable for IF bandpass filter application.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.52 no.7
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• pp.275-281
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• 2003

$Zn_{0.5}Cd_{0.5}Al_{2}Se_{4}$ and $Zn_{0.5}Cd_{0.5}Al_{2}Se_{4}$:$Co^{2+}$ single crystals were grown by CTR method. The grown single crystals have defect chalcopyrite structure with lattice constant a=5.5966$\AA$, c=10.8042$\AA$ for the pure, a=5.6543$\AA$, c=10.8205$\AA$ for the Co-doped single crystal, respectively. The optical energy band gap was given as indirect band gap. The optical energy band gap was decreased according to add of Co-impurity Temperature dependence of optical energy band gap was fitted well to the Varshni equation. From this relation, we can deduced the entropy, enthalpy and heat capacity. Also, we can observed the Co-impurity optical absorption peaks assigned to the $Co^{2+}$ ion sited at the $T_{d}$ symmetry lattice and we consider that they were attributed to the electron transitions between energy levels of ions.

• Journal of the Korean Vacuum Society
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• v.3 no.1
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• pp.130-137
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• 1994

SbSBr, BiSBr, SbSBr : Co, BiSBr : Co, SbSBr : Ni 및 BiSBr : Ni 단결정을 수직 Bridgman 방법으로 성장시켰다. 성장된 단결정의 구조는 orthorhombic 구조이며 광학적 energy band gap 구조는 간접적이형이었고 energy gap의 온도의존성은 일차 및 이차 상전이점에서 anomalous 한 특성이 나 타 났다. 불순물로 첨가한 cobalt와 nickel은 Td 대칭점에 Co2+ ion, Co3+ ion 및 Ni2+ ion으로 위치하며 이들 ion의 energy 준위간의 전자전이에 의하여 불순물 광흡수 peak들이 나타난다.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.38 no.5
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• pp.338-346
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• 2001

An infrared imaging method in which direct measurement of energy gap variations can be achieved by digital image processing is proposed. This method allows economic and easy evaluation of the temperature coefficients of a semiconductor energy gap. The key components of the method are a polychromator, a computer equipped with a frame grabber and a variable temperature cryostat. Tentative experimentation conducted on LEC grown semi-insulating GaAs has resulted in a fairly good agreement with the theoretical model. This proposed method could be applicable for most compound semiconductors.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.11 no.6
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• pp.442-446
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• 1998

$\alpha$--sulfur single crystal which has orthorohmbic structure was grown using Bridgman method. The indirect optical energy band gap of this crystal are 2.65 and 2.82 eV at 10 and 300K, respectively. The wavelengths of photoluminecence(PL) peaks are 543 and 596 nm at 10k, By thermally stimulated current (TSC) method, two electron traps($D_1,D_2$) located at 0/23 and 0.43eV below the conduction band and a hole trap(A) located at 0.31 eV above the valence band are observed. PL mechanism of $\alpha$-sulfur single crystal is analyzed using the values of optical energy band gap at 10k two electron traps and a hole trap.

• The Transactions of the Korean Institute of Electrical Engineers P
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• v.51 no.3
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• pp.137-141
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• 2002

CdS and $CdS:Co^{2+}$ single crystals were grown by CTR method using iodine as transport material. The grown single crystals have defect chalcopyrite structure with direct band gap. The optical energy band gap was decreased according to add of Co-impurity. We can observed the Co-impurity optical absorption peaks assigned to the $Co^{2+}$ ion sited at the $T_d$ symmetry lattice and we consider that they were attributed to the electron transitions between energy levels of ions.