• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2005.11a
• /
• pp.111-112
• /
• 2005

To obtain the single crystal thin films, $CuInSe_2$, mixed crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by the hot wail epitaxy (HWE) system. The source and substrate temperatures were 620$^{\circ}C$ and 410$^{\circ}C$, respectively. The crystalline structure of the single crystal thin films was investigated by the photoluminescence and double crystal X-ray diffraction (DCXD). The carrier density and mobilily of $CuInSe_2$ single crystal thin films measured with Hall effect by van der Pauw method are $9.62\times10^{16}$ $cm^{-3}$ and $296cm^2/V{\cdot}s$ at 293 K, respectively. The temperature dependence of the energy band gap of the CulnSe$_2$ obtained from the absorption spectra was well described by the Varshni's relation E$_g$(T) = 1.1851 eV - ($8.99\times10^{-4}$ ev/K)T$_2$/(T + 153K). After the as-grown $CuInSe_2$ single crystal thin films was annealed in Cu-, Se-, and In-atmospheres the origin of point defects of $CuInSe_2$ single crystal thin films has been investigated by the photoluminescence(PL) at 10 K. The nat ive defects of V$_{Cu}$, $V_{Se}$, Cu$_{int}$, and $Se_{int}$ obtained by PL measurements were classified as a donors or accepters type. And we concluded that the heat-treatment in the Cu-atmosphere converted $CuInSe_2$ single crystal thin films to an optical n-type. Also, we confirmed that In in $CuInSe_2$/GaAs did not form the native defects because In in $CuInSe_2$ single crystal thin films existed in the form of stable bonds.

• Journal of Korean Ophthalmic Optics Society
• /
• v.6 no.1
• /
• pp.133-137
• /
• 2001

The method to make glass is tried first thing in domestic study for glasses lens. Tg of glass KzFSl was measured by DSC experiment and press method of glass of meniscus shape was studied for minimize the cost. Tg was increased $483^{\circ}C$ to $501^{\circ}C$ with increasing heating rate $2^{\circ}C/min$ to $20^{\circ}C/min$. It shows Arrhenius temperature dependence and the activation energy of Tg is ${\Delta}E$=409 kJ/mole(4.25eV) by using Ozawa method and Tg is near $480^{\circ}C$. The melt of KzFSl powder was poured to concave cast stainless and pressed convex cast stainless. The quenched glass was slow cooled with cooling rate $0.25^{\circ}C/min$ in temperature range $520{\sim}430^{\circ}C$. The glass was made without strain. It has meniscus shape and same size to commercial glasses lens.

• Journal of Sensor Science and Technology
• /
• v.7 no.3
• /
• pp.188-196
• /
• 1998

The sensing and electrical characteristics of $WO_{3}$-based n-type semiconductor gas sensors are investigated. In normal air condition, $TiO_{2}$(4 wt. %)-doped $WO_{3}$-based sensor fabricated without any binder shows the grain boundary ( GB ) potential barrier height of 0.26 V. Sensors fabricated with alumina, PVA and silica sol binders show 0.17, 0.22 and 0.26 V of GB potential barrier height, respectively. In the ambience of 120 ppm $NO_{x}$ concentration, the GB potential barrier height of the sensor fablicated without binder is increased to 0.59 V. The sensors were fabricated with alumina, PVA, silica sol binders show 0.43, 0.66 and 0.52 V of potential barrier, respectively. Thus the variation of the potential barrier at GB is largest in the sensor fabricated with the PVA binder. This is found to be the main reason why the sensor fabricated with the PVA binder shows the best sensitivity. It is also found that the decrease of sensitivity at a temperature higher than the optimum operation temperature is due to the temperature dependence of the sensor resistance in normal air condition rather than the desorption of the adsorbed $NO_{x}$ gas particles. In the ambience of 250 ppm CO concentration, the GB potential barrier heights of the sensors fabricated without binder and with PVA binder are about 0.2 V showing negligible change compared to the case of normal air ambience. This fact indicates that these sensors are good candidates for the selective detection of $NO_{x}$ gas in the mixture of CO and $NO_{x}$ gases.

• Korean Journal of Food Science and Technology
• /
• v.21 no.4
• /
• pp.480-485
• /
• 1989

Changes of color intensity and components during browning reaction of water extracts from white tail ginseng were investigated. Temperature dependence was described by the Arrhenius relationship with an activation energy of 16kcal/mole. Temperature sensitivities$(Q_{10}\;value)$ for water extracts of ginseng was 1.90 between $70^{\circ}C\;and\;80^{\circ}C$, 1.57 between $80^{\circ}C\;and\;90^{\circ}C$ and 1.46 between $90^{\circ}C\;and\;100^{\circ}C$. pH value of the solution treated at $90^{\circ}C\;and\;100^{\circ}C$ slightly increased with an increase in reaction time. Among ginseng saponins ginsenoside-Re was most unstable against heat-treatment, white diol group saponins were more stable against heat-treatment. Hydrogen donating activity (reducing activity for ${\alpha},\;{\alpha}'-diphenyl-{\beta}-picrylhydrazyl$) and 3,5-dinitrosalicylic acid(DNS) positive substances of browning reaction products increased in proportion to the length of browning reaction time and temperature, whereas folin positive substances decreased by heat-denaturation of ginseng protein at initial reaction time and then increased thereafter.

• Journal of Radiation Protection and Research
• /
• v.20 no.2
• /
• pp.79-83
• /
• 1995

A number of investigators have reported formation of radiolytic ultrafine particles produced by the interaction of ionizing radiation with atmospheric trace gases. Previous studies have suggested that a very high localized concentration of the hydroxyl radical produced by the radiolysis of water can react with atmospheric trace gases such as $SO_2$ and produce lower vapor pressure compounds that can subsequently nucleate. To determine the trace gas and water vapor concentration dependence of the active, positively charged, first decayt product of radon (Po-218), a well-controlled radon chamber was used in this research. The mobility spectrum of the decay products in the range of $0.07-5.0cm^2/V\;sec$ from the radon chamber was measured using alpha track detector installed inside a specially-designed electrostatic spectrometer. Measurements were taken for different concentrations (0.5ppm to 5ppm) of $SO_2$ in Purified, Compressed air. A kinetics Study following the clustering of $SO_2$ around the $PoO_x^+$ ion in an excess of $SO_2$ for interpretation of the reaction processes was performed.

• Korean journal of applied entomology
• /
• v.29 no.1
• /
• pp.31-42
• /
• 1990

Storage ecosystems of rough rice, brown rice and polished rice were analyzed form Feb. 1987 to Nov. 1988 to investigate structures and ecological successions in the arthropod communities as well as changes in energy of the systems. The changes in temperature of stored rice showed high degree dependence on the temperature of storage room with time lag of about four weeks. Moisture content of rough rice, brown rice and polished rice during the period were in the range of 12.7$\pm$0.4, 13.1$\pm$0.4 and 13.5$\pm$0.3%, respectively. The arthropod communities in rough rice, brown rice and polished rice were qualitatively and quantitatively different. In rough rice, dominant species changed from Leptinotus reticulatus Endlein to Liposcelisentomophilus Endlein, while in brown rice from Pyralis farinalis L. to Sitophilus oryze (L.), unidentified parasitic wasps, Anisopteromalus calandrae Howard and Tribolium castaneum Herbst and finally to S. oryzae. In polished rice, the arthropod community showed an ecological succession similar to that in brown rice except for a transient dominance of two psocidspecies. Thearthropod community in rough rice was rather simple and unstable in comparison with those in brown rice and polished rice. The 1000 kernel weight of brown rice decreased slightly during the period when the arthropods were active (summer season), while that of rough rice and polished rice remained at the similar level. However, the ash content per unit volume of brown rice as well as rough rice and polished rice showed no increase during the period.

• Journal of the Korean Chemical Society
• /
• v.36 no.4
• /
• pp.511-516
• /
• 1992

The x-values of the nonstoichiometric compound YbO$_x$ have been measured in a temperature range of 600 to 1150$^{\circ}C$ under oxygen partial pressure of 1.00 ${\times}$ 10$^{-2}$ atm∼atmospheric air pressure. The values are varied between 1.55453 and 1.60794 in the conditions. The enthalpy of the formation for x' in YbO$_{1.5＋x'}$(${\Delta}$H$_f$) was 1.55, 1.18, and 1.05 kJ/mol under the above conditions, respectively. The electrical conductivities of the oxides or ${\sigma}$ have been measured in the temperature range from 600 to 1100$^{\circ}C$ under oxygen partial pressure of 1.00 ${\times}$ 10$^{-5}$ ∼ 2.00 ${\times}$ 10$^{-1}$ atm. They varied from 10$^{-9}$ to 10$^{-5}$ ohm$^{-1}$ cm$^{-1}$ within the semiconductor range. The Arrhenius plots of the electrical conductivities show a linearity and the activation energy for the conduction was about 1.7eV. The oxygen partial pressure dependence of the conductivity or 1/n value increases with the pressure. The nonstoichiometric conduction mechanism of the oxide was discussed in terms of the x values, ${\sigma}$ values, and the thermodynamic data.

• Journal of the Korean Chemical Society
• /
• v.36 no.4
• /
• pp.540-545
• /
• 1992

Kinetics and mechanism on the solvent extraction of nickel(Ⅱ) with 8-hydroxyquinoline (HOx) was studied spectrophotometrically. Absorbance variation was measured by changing the 8-hydroxyquinoline concentration in the chloroform organic phase and the pH values in the aquous phase. By analyzing absorbance data the reaction rate was found to be the first order for 8-hydroxyquinoline concentration and the inverse first one for [H$^+$]. Therefore the rate determining step of the extraction reaction is the formation of the one-to-one metal chelate NiOx$^+$ and the rate equation is as follows; -d[Ni$^{2+}$]/dt = k[Ni$^{2+}$][Ox$^-$] = k'[Ni$^{2+}$][HOx]$_0$/[H$^+$]. The value of k' was evaluated from the slope of plot of log [Ni$^{2+}$]$_0$/[Ni$^{2+}$]$_t$ versus time and the rate constant k was calculated according to the equation k' = k ${\times}$ K$_{HOx}$ / K$_{D,HOx}$. From the temperature dependence of the extraction rate, the activation energy E$_a$ = 6.26 kcal/mol is calculated, and activation parameters, ${\Delta}$G$^{\neq}_{298}$ = 6.59 kcal/mol, ${\Delta}$H$^{\neq}_{298}$ = 5.68 kcal/mol, ${\Delta}$S$^{\neq}_{298}$ = -3.09 eu/mol are estimated.

• Nuclear Engineering and Technology
• /
• v.6 no.1
• /
• pp.14-22
• /
• 1974

Effects of anodization voltage on frequency characteristics of anodic oxide films on tantalum were analyzed based on the following impedance equatious : (equation omitted) Here $R_{f}$, $C_{f}$ and tan $\delta$$_{f}$ are equivalent series resistance in ohm, equivalent Belies capacitance in farad and dielectric loss, of anodic oxide films respectively Parameters P, $\tau$$_{ο}$, $\tau$$_{\omega}$, and Co are defined as follows: P=(d-w)/w, $\tau$$_{ο}$=$textsc{k}$$\rho$$_{ο}$, $\tau$$_{\omega}$=$textsc{k}$$\rho$$_{\omega}$, $C_{ο}$=$textsc{k}$A/d where d is the thickness of oxide film, $\omega$ is the diffusion layer thickness. $\rho$$_{ο}$ is the resistivity of oxide film at the interface of metal and the oxide, $\rho$$_{\omega}$ is the resistivity of oxide film at intrinsic region and A is the area of the film and $textsc{k}$=0.0885$\times$10$^{-12}$ $\times$dielectric constant, (in farad/cm). It was shown that dielectric loss and frequency dependence of equivalent series capacitance decrease as anodization voltage increases. This is a consequence of the fact that the thickness of diffusion layer increases a little with increasing anodization voltage whereas the total oxide thickness is proportional to the anodization voltage. The ngative deviation of measured values from tile relation, tan $\delta$$_{f}$=0.682 $\Delta$ $C_{f}$, was also discussed based on the Impedance equations given above. Here $\Delta$ $C_{f}$ is the change in capacitance between 0.1 and 1 KHZ.KHZ.Z.

• Nuclear Engineering and Technology
• /
• v.4 no.4
• /
• pp.306-321
• /
• 1972

Molecular reorientation in (NH$_4$)$_2$SO$_4$, has been studied by cold neutron scattering. For T=300$^{\circ}$K data, the isolated quasielastic spectra and form-factors at various scattering angles are compared with four reorientational models based on SKOLD theory. Front these, it is concluded that the NH$_4$ions are performing either 3-fold four axes or 2-fold three axes reorientation with $\tau$$_{c}$=2.0$\times$10$^{-11}$ sec. The temperature dependence of f. is studied over 100$^{\circ}$K-413$^{\circ}$K and for the high-temperature phase, the widths of composite spectra are compared with the results from NMR relaxation measurements. All the results have shown that the neutron scattering method is capable of giving detalis of the reorientational modes in solids and therefore some discussions are given on the application of this method. A study of the form-factor is applied for NH$_4$I (Phase I) by comparing the measurement with the calculation based on free rotation approximation and proposed a reorientation model of NH$_4$ ions in the octahedral potential cage with $\tau$$_{c}$$\leq$10$^{-12}$ sec. Also a brief theoretical prediction for the effect of reorientational motions on the inelastic spectrum is discussed.sed.